DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN3439; PN3440 NPN high-voltage transistors Product specification Supersedes data of 1997 Jun 17 File under Discrete Semiconductors, SC04 1997 Sep 04 Philips Semiconductors Product specification NPN high-voltage transistors PN3439; PN3440 FEATURES PINNING • Low current (max. 100 mA) PIN • High voltage (max. 350 V). 1 collector 2 base 3 emitter APPLICATIONS DESCRIPTION • Telephony and professional communication equipment. DESCRIPTION handbook, halfpage1 NPN high-voltage transistor in a TO-92; SOT54 plastic package. 1 2 3 2 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS − 400 V PN3440 − 300 V PN3439 − 350 V PN3440 − 250 V − 200 mA − 500 mW 30 − 40 − 70 − collector-emitter voltage open base Ptot total power dissipation Tamb ≤ 25 °C hFE DC current gain IC = 2 mA; VCE = 10 V PN3439 DC current gain IC = 20 mA; VCE = 10 V PN3440 transition frequency 1997 Sep 04 UNIT PN3439 peak collector current fT MAX. open emitter ICM hFE MIN. IC = 10 mA; VCE = 10 V; f = 100 MHz 2 MHz Philips Semiconductors Product specification NPN high-voltage transistors PN3439; PN3440 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter PN3439 − 400 V PN3440 − 300 V PN3439 − 350 V PN3440 − 250 V − 5 V collector-emitter voltage open base VEBO emitter-base voltage IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 100 mA open collector Ptot total power dissipation − 500 mW Tstg storage temperature Tamb ≤ 25 °C −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1997 Sep 04 3 VALUE UNIT 250 K/W Philips Semiconductors Product specification NPN high-voltage transistors PN3439; PN3440 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current ICBO collector cut-off current CONDITIONS UNIT − 100 nA − 100 nA − 100 nA 30 − 40 − − 500 IE = 0; VCB = 250 V PN3440 IEBO emitter cut-off current IC = 0; VEB = 5 V hFE DC current gain IC = 2 mA; VCE = 10 V PN3439 DC current gain MAX. IE = 0; VCB = 360 V PN3439 hFE MIN. IC = 20 mA; VCE = 10 V PN3440 VCEsat collector-emitter saturation voltage IC = 50 mA; IB = 4 mA VBEsat base-emitter saturation voltage IC = 50 mA; IB = 4 mA − 1.3 V Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 2 pF Ce emitter capacitance IC = ic = 0; VEB = 5 V; f = 1 MHz − 20 pF fT transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 70 − MHz 1997 Sep 04 4 mV Philips Semiconductors Product specification NPN high-voltage transistors PN3439; PN3440 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1997 Sep 04 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN high-voltage transistors PN3439; PN3440 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Sep 04 6 Philips Semiconductors Product specification NPN high-voltage transistors PN3439; PN3440 NOTES 1997 Sep 04 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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