PHILIPS PESD24VS1UL

PESDxS1UL series
ESD protection diodes in a SOD882 package
Rev. 02 — 20 August 2009
Product data sheet
1. Product profile
1.1 General description
Unidirectional ElectroStatic Discharge (ESD) protection diodes in a SOD882 leadless
ultra small Surface Mounted Device (SMD) plastic package designed to protect one signal
line from the damage caused by ESD and other transients.
1.2 Features
n
n
n
n
Ultra small SMD plastic package
ESD protection of one line
Max. peak pulse power: PPP = 150 W
Low clamping voltage: VCL = 20 V
n
n
n
n
Ultra low leakage current: IRM < 700 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5; (surge); IPP up to 15 A
1.3 Applications
n Computers and peripherals
n Audio and video equipment
n Parallel ports
n Communication systems
n High-speed data lines
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VRWM
reverse stand-off voltage
Conditions
Min
Typ
Max
Unit
PESD3V3S1UL
-
-
3.3
V
PESD5V0S1UL
-
-
5.0
V
PESD12VS1UL
-
-
12
V
PESD15VS1UL
-
-
15
V
-
-
24
V
PESD3V3S1UL
-
207
300
pF
PESD5V0S1UL
-
152
200
pF
PESD12VS1UL
-
38
75
pF
PESD15VS1UL
-
32
70
pF
PESD24VS1UL
-
23
50
pF
PESD24VS1UL
Cd
diode capacitance
f = 1 MHz; VR = 0 V
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode
2
anode
Simplified outline
Symbol
[1]
1
1
2
2
sym035
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Type number
PESD3V3S1UL
Package
Name
Description
-
leadless ultra small plastic package; 2 terminals; SOD882
body 1.0 × 0.6 × 0.5 mm
PESD5V0S1UL
Version
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
4. Marking
Table 4.
Marking codes
Type number
Marking code
PESD3V3S1UL
G1
PESD5V0S1UL
G2
PESD12VS1UL
G3
PESD15VS1UL
G4
PESD24VS1UL
G5
PESDXS1UL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
2 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Min
Max
Unit
-
150
W
PESD3V3S1UL
-
15
A
PESD5V0S1UL
-
15
A
PESD12VS1UL
-
5
A
PESD15VS1UL
-
5
A
PESD24VS1UL
-
3
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
PPP
IPP
[1]
Parameter
Conditions
peak pulse power
tp = 8/20 µs
[1]
peak pulse current
tp = 8/20 µs
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
Table 6.
ESD maximum ratings
Symbol
Parameter
VESD
Conditions
Min
Max
Unit
PESD3V3S1UL
-
30
kV
PESD5V0S1UL
-
30
kV
PESD12VS1UL
-
30
kV
PESD15VS1UL
-
30
kV
PESD24VS1UL
-
23
kV
-
10
kV
electrostatic discharge voltage
PESDxS1UL series
[1]
IEC 61000-4-2
(contact discharge)
HBM MIL-STD-883
Device stressed with ten non-repetitive ESD pulses.
Table 7.
ESD standards compliance
Standard
Conditions
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
HBM MIL-STD-883; class 3
> 4 kV
PESDXS1UL_SER_2
Product data sheet
[1]
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
3 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
001aaa631
IPP
001aaa630
120
100 %
90 %
100 % IPP; 8 µs
IPP
(%)
80
e−t
50 % IPP; 20 µs
40
10 %
0
10
20
30
30 ns
40
t (µs)
Fig 1.
t
tr = 0.7 ns to 1 ns
0
60 ns
8/20 µs pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
VRWM
reverse stand-off voltage
IRM
Conditions
Min
Typ
Max
Unit
PESD3V3S1UL
-
-
3.3
V
PESD5V0S1UL
-
-
5.0
V
PESD12VS1UL
-
-
12
V
PESD15VS1UL
-
-
15
V
PESD24VS1UL
-
-
24
V
-
0.7
2
µA
reverse leakage current
PESD3V3S1UL
VBR
VRWM = 3.3 V
PESD5V0S1UL
VRWM = 5.0 V
-
0.1
1
µA
PESD12VS1UL
VRWM = 12 V
-
<1
50
nA
PESD15VS1UL
VRWM = 15 V
-
<1
50
nA
PESD24VS1UL
VRWM = 24 V
-
<1
50
nA
PESD3V3S1UL
5.2
5.6
6.0
V
PESD5V0S1UL
6.4
6.8
7.2
V
PESD12VS1UL
14.7
15.0
15.3
V
PESD15VS1UL
17.6
18.0
18.4
V
PESD24VS1UL
26.5
27.0
27.5
V
breakdown voltage
IR = 5 mA
PESDXS1UL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
4 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
Table 8.
Characteristics …continued
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Cd
diode capacitance
f = 1 MHz; VR = 0 V
PESD3V3S1UL
-
207
300
pF
PESD5V0S1UL
-
152
200
pF
PESD12VS1UL
-
38
75
pF
PESD15VS1UL
-
32
70
pF
-
23
50
pF
IPP = 1 A
-
-
8
V
IPP = 15 A
-
-
20
V
IPP = 1 A
-
-
9
V
IPP = 15 A
-
-
20
V
IPP = 1 A
-
-
19
V
IPP = 5 A
-
-
35
V
IPP = 1 A
-
-
23
V
IPP = 5 A
-
-
40
V
IPP = 1 A
-
-
36
V
IPP = 3 A
-
-
70
V
PESD24VS1UL
VCL
clamping voltage
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
rdif
[1]
[1]
differential resistance
PESD3V3S1UL
IR = 1 mA
-
-
400
Ω
PESD5V0S1UL
IR = 1 mA
-
-
80
Ω
PESD12VS1UL
IR = 1 mA
-
-
200
Ω
PESD15VS1UL
IR = 1 mA
-
-
225
Ω
PESD24VS1UL
IR = 0.5 mA
-
-
300
Ω
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
PESDXS1UL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
5 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
001aaa726
104
001aaa193
1.2
PPP
PPP
(W)
PPP(25°C)
103
0.8
102
0.4
10
1
102
10
0
103
0
50
100
150
tp (µs)
200
Tj (°C)
Tamb = 25 °C
Fig 3.
Peak pulse power as a function of exponential
pulse duration; typical values
Fig 4.
001aaa727
240
Cd
(pF)
Relative variation of peak pulse power as a
function of junction temperature; typical
values
001aaa728
50
Cd
(pF)
200
40
160
30
(1)
120
20
(2)
(1)
(2)
80
10
40
(3)
0
0
1
2
3
4
5
0
5
10
15
VR (V)
20
25
VR (V)
f = 1 MHz; Tamb = 25 °C
f = 1 MHz; Tamb = 25 °C
(1) PESD3V3S1UL; VRWM = 3.3 V
(1) PESD12VS1UL; VRWM = 12 V
(2) PESD5V0S1UL; VRWM = 5.0 V
(2) PESD15VS1UL; VRWM = 15 V
(3) PESD24VS1UL; VRWM = 24 V
Fig 5.
Diode capacitance as a function of reverse
voltage; typical values
Fig 6.
Diode capacitance as a function of reverse
voltage; typical values
PESDXS1UL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
6 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
I
001aaa729
10
IRM
IRM(25°C)
(1)
−VCL −VBR −VRWM
(2)
V
−IRM
−IR
1
−
+
P-N
10−1
−100
−50
0
50
100
−IPP
150
Tj (°C)
006aaa407
(1) PESD3V3S1UL; VRWM = 3.3 V
(2) PESD5V0S1UL; VRWM = 5.0 V
IR is less than 15 nA at 150 °C for:
PESD12VS1UL; VRWM = 12 V
PESD15VS1UL; VRWM = 15 V
PESD24VS1UL; VRWM = 24 V
Fig 7.
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
Fig 8.
V-I characteristics for a unidirectional ESD
protection diode
PESDXS1UL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
7 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
ESD TESTER
450 Ω
Rd
RG 223/U
50 Ω coax
10×
ATTENUATOR
4 GHz DIGITAL
OSCILLOSCOPE
50 Ω
Cs
note 1
Note 1: IEC 61000-4-2 network
Cs = 150 pF; Rd = 330 Ω
D.U.T.
(DEVICE
UNDER
TEST)
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 20 V/div
horizontal scale = 50 ns/div
PESD24VS1UL
GND
PESD15VS1UL
GND
GND
PESD12VS1UL
GND
PESD5V0S1UL
GND
PESD3V3S1UL
GND
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
GND
GND
vertical scale = 10 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
006aaa682
Fig 9.
ESD clamping test setup and waveforms
PESDXS1UL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
8 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
7. Application information
The PESDxS1UL series is designed for protection of one unidirectional data line from the
damage caused by ESD and surge pulses. The PESDxS1UL series may be used on lines
where the signal polarities are either positive or negative with respect to ground. The
PESDxS1UL series provides a surge capability of 150 W for an 8/20 µs waveform.
line to be protected
(positive signal polarity)
line to be protected
(negative signal polarity)
PESDxS1UL
PESDxS1UL
ground
ground
unidirectional protection of one line
006aaa681
Fig 10. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESDxS1UL as close to the input terminal or connector as possible.
2. The path length between the PESDxS1UL and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
PESDXS1UL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
9 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
8. Package outline
0.50
0.46
0.62
0.55
2
0.30
0.22
0.65
0.30
0.22
1.02
0.95
1
0.55
0.47
cathode marking on top side
Dimensions in mm
03-04-17
Fig 11. Package outline SOD882
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
10000
PESD3V3S1UL
SOD882
4 mm pitch, 8 mm tape and reel
-315
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
[1]
For further information and the availability of packing methods, see Section 12.
PESDXS1UL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
10 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
10. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PESDXS1UL_SER_2
20090820
Product data sheet
-
PESDXS1UL_SER_1
Modifications:
PESDXS1UL_SER_1
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
20060331
Product data sheet
PESDXS1UL_SER_2
Product data sheet
-
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
11 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PESDXS1UL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
12 of 13
NXP Semiconductors
PESDxS1UL series
ESD protection diodes in a SOD882 package
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information. . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 August 2009
Document identifier: PESDXS1UL_SER_2