PESDxS1UL series ESD protection diodes in a SOD882 package Rev. 02 — 20 August 2009 Product data sheet 1. Product profile 1.1 General description Unidirectional ElectroStatic Discharge (ESD) protection diodes in a SOD882 leadless ultra small Surface Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. 1.2 Features n n n n Ultra small SMD plastic package ESD protection of one line Max. peak pulse power: PPP = 150 W Low clamping voltage: VCL = 20 V n n n n Ultra low leakage current: IRM < 700 nA ESD protection up to 30 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5; (surge); IPP up to 15 A 1.3 Applications n Computers and peripherals n Audio and video equipment n Parallel ports n Communication systems n High-speed data lines 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse stand-off voltage Conditions Min Typ Max Unit PESD3V3S1UL - - 3.3 V PESD5V0S1UL - - 5.0 V PESD12VS1UL - - 12 V PESD15VS1UL - - 15 V - - 24 V PESD3V3S1UL - 207 300 pF PESD5V0S1UL - 152 200 pF PESD12VS1UL - 38 75 pF PESD15VS1UL - 32 70 pF PESD24VS1UL - 23 50 pF PESD24VS1UL Cd diode capacitance f = 1 MHz; VR = 0 V PESDxS1UL series NXP Semiconductors ESD protection diodes in a SOD882 package 2. Pinning information Table 2. Pinning Pin Description 1 cathode 2 anode Simplified outline Symbol [1] 1 1 2 2 sym035 Transparent top view [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number PESD3V3S1UL Package Name Description - leadless ultra small plastic package; 2 terminals; SOD882 body 1.0 × 0.6 × 0.5 mm PESD5V0S1UL Version PESD12VS1UL PESD15VS1UL PESD24VS1UL 4. Marking Table 4. Marking codes Type number Marking code PESD3V3S1UL G1 PESD5V0S1UL G2 PESD12VS1UL G3 PESD15VS1UL G4 PESD24VS1UL G5 PESDXS1UL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 2 of 13 PESDxS1UL series NXP Semiconductors ESD protection diodes in a SOD882 package 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Min Max Unit - 150 W PESD3V3S1UL - 15 A PESD5V0S1UL - 15 A PESD12VS1UL - 5 A PESD15VS1UL - 5 A PESD24VS1UL - 3 A Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C PPP IPP [1] Parameter Conditions peak pulse power tp = 8/20 µs [1] peak pulse current tp = 8/20 µs [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. Table 6. ESD maximum ratings Symbol Parameter VESD Conditions Min Max Unit PESD3V3S1UL - 30 kV PESD5V0S1UL - 30 kV PESD12VS1UL - 30 kV PESD15VS1UL - 30 kV PESD24VS1UL - 23 kV - 10 kV electrostatic discharge voltage PESDxS1UL series [1] IEC 61000-4-2 (contact discharge) HBM MIL-STD-883 Device stressed with ten non-repetitive ESD pulses. Table 7. ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) HBM MIL-STD-883; class 3 > 4 kV PESDXS1UL_SER_2 Product data sheet [1] © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 3 of 13 PESDxS1UL series NXP Semiconductors ESD protection diodes in a SOD882 package 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % 0 10 20 30 30 ns 40 t (µs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter VRWM reverse stand-off voltage IRM Conditions Min Typ Max Unit PESD3V3S1UL - - 3.3 V PESD5V0S1UL - - 5.0 V PESD12VS1UL - - 12 V PESD15VS1UL - - 15 V PESD24VS1UL - - 24 V - 0.7 2 µA reverse leakage current PESD3V3S1UL VBR VRWM = 3.3 V PESD5V0S1UL VRWM = 5.0 V - 0.1 1 µA PESD12VS1UL VRWM = 12 V - <1 50 nA PESD15VS1UL VRWM = 15 V - <1 50 nA PESD24VS1UL VRWM = 24 V - <1 50 nA PESD3V3S1UL 5.2 5.6 6.0 V PESD5V0S1UL 6.4 6.8 7.2 V PESD12VS1UL 14.7 15.0 15.3 V PESD15VS1UL 17.6 18.0 18.4 V PESD24VS1UL 26.5 27.0 27.5 V breakdown voltage IR = 5 mA PESDXS1UL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 4 of 13 PESDxS1UL series NXP Semiconductors ESD protection diodes in a SOD882 package Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Cd diode capacitance f = 1 MHz; VR = 0 V PESD3V3S1UL - 207 300 pF PESD5V0S1UL - 152 200 pF PESD12VS1UL - 38 75 pF PESD15VS1UL - 32 70 pF - 23 50 pF IPP = 1 A - - 8 V IPP = 15 A - - 20 V IPP = 1 A - - 9 V IPP = 15 A - - 20 V IPP = 1 A - - 19 V IPP = 5 A - - 35 V IPP = 1 A - - 23 V IPP = 5 A - - 40 V IPP = 1 A - - 36 V IPP = 3 A - - 70 V PESD24VS1UL VCL clamping voltage PESD3V3S1UL PESD5V0S1UL PESD12VS1UL PESD15VS1UL PESD24VS1UL rdif [1] [1] differential resistance PESD3V3S1UL IR = 1 mA - - 400 Ω PESD5V0S1UL IR = 1 mA - - 80 Ω PESD12VS1UL IR = 1 mA - - 200 Ω PESD15VS1UL IR = 1 mA - - 225 Ω PESD24VS1UL IR = 0.5 mA - - 300 Ω Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. PESDXS1UL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 5 of 13 PESDxS1UL series NXP Semiconductors ESD protection diodes in a SOD882 package 001aaa726 104 001aaa193 1.2 PPP PPP (W) PPP(25°C) 103 0.8 102 0.4 10 1 102 10 0 103 0 50 100 150 tp (µs) 200 Tj (°C) Tamb = 25 °C Fig 3. Peak pulse power as a function of exponential pulse duration; typical values Fig 4. 001aaa727 240 Cd (pF) Relative variation of peak pulse power as a function of junction temperature; typical values 001aaa728 50 Cd (pF) 200 40 160 30 (1) 120 20 (2) (1) (2) 80 10 40 (3) 0 0 1 2 3 4 5 0 5 10 15 VR (V) 20 25 VR (V) f = 1 MHz; Tamb = 25 °C f = 1 MHz; Tamb = 25 °C (1) PESD3V3S1UL; VRWM = 3.3 V (1) PESD12VS1UL; VRWM = 12 V (2) PESD5V0S1UL; VRWM = 5.0 V (2) PESD15VS1UL; VRWM = 15 V (3) PESD24VS1UL; VRWM = 24 V Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Diode capacitance as a function of reverse voltage; typical values PESDXS1UL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 6 of 13 PESDxS1UL series NXP Semiconductors ESD protection diodes in a SOD882 package I 001aaa729 10 IRM IRM(25°C) (1) −VCL −VBR −VRWM (2) V −IRM −IR 1 − + P-N 10−1 −100 −50 0 50 100 −IPP 150 Tj (°C) 006aaa407 (1) PESD3V3S1UL; VRWM = 3.3 V (2) PESD5V0S1UL; VRWM = 5.0 V IR is less than 15 nA at 150 °C for: PESD12VS1UL; VRWM = 12 V PESD15VS1UL; VRWM = 15 V PESD24VS1UL; VRWM = 24 V Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values Fig 8. V-I characteristics for a unidirectional ESD protection diode PESDXS1UL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 7 of 13 PESDxS1UL series NXP Semiconductors ESD protection diodes in a SOD882 package ESD TESTER 450 Ω Rd RG 223/U 50 Ω coax 10× ATTENUATOR 4 GHz DIGITAL OSCILLOSCOPE 50 Ω Cs note 1 Note 1: IEC 61000-4-2 network Cs = 150 pF; Rd = 330 Ω D.U.T. (DEVICE UNDER TEST) vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 20 V/div horizontal scale = 50 ns/div PESD24VS1UL GND PESD15VS1UL GND GND PESD12VS1UL GND PESD5V0S1UL GND PESD3V3S1UL GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND GND vertical scale = 10 V/div horizontal scale = 50 ns/div vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) 006aaa682 Fig 9. ESD clamping test setup and waveforms PESDXS1UL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 8 of 13 PESDxS1UL series NXP Semiconductors ESD protection diodes in a SOD882 package 7. Application information The PESDxS1UL series is designed for protection of one unidirectional data line from the damage caused by ESD and surge pulses. The PESDxS1UL series may be used on lines where the signal polarities are either positive or negative with respect to ground. The PESDxS1UL series provides a surge capability of 150 W for an 8/20 µs waveform. line to be protected (positive signal polarity) line to be protected (negative signal polarity) PESDxS1UL PESDxS1UL ground ground unidirectional protection of one line 006aaa681 Fig 10. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESDxS1UL as close to the input terminal or connector as possible. 2. The path length between the PESDxS1UL and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. PESDXS1UL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 9 of 13 PESDxS1UL series NXP Semiconductors ESD protection diodes in a SOD882 package 8. Package outline 0.50 0.46 0.62 0.55 2 0.30 0.22 0.65 0.30 0.22 1.02 0.95 1 0.55 0.47 cathode marking on top side Dimensions in mm 03-04-17 Fig 11. Package outline SOD882 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 10000 PESD3V3S1UL SOD882 4 mm pitch, 8 mm tape and reel -315 PESD5V0S1UL PESD12VS1UL PESD15VS1UL PESD24VS1UL [1] For further information and the availability of packing methods, see Section 12. PESDXS1UL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 10 of 13 PESDxS1UL series NXP Semiconductors ESD protection diodes in a SOD882 package 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESDXS1UL_SER_2 20090820 Product data sheet - PESDXS1UL_SER_1 Modifications: PESDXS1UL_SER_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. 20060331 Product data sheet PESDXS1UL_SER_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 11 of 13 PESDxS1UL series NXP Semiconductors ESD protection diodes in a SOD882 package 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PESDXS1UL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 12 of 13 NXP Semiconductors PESDxS1UL series ESD protection diodes in a SOD882 package 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information. . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 August 2009 Document identifier: PESDXS1UL_SER_2