PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2540E. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current (DC) ICM peak collector current RCEsat [1] collector-emitter saturation resistance Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Conditions Min Typ Max open base - - −40 V - - −500 mA - - −1 A - 440 700 mΩ IC = −500 mA; IB = −50 mA [1] Unit PBSS3540E NXP Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Symbol 3 3 1 1 2 2 sym013 3. Ordering information Table 3. Ordering information Type number PBSS3540E Package Name Description Version SC-75 plastic surface mounted package; 3 leads SOT416 4. Marking Table 4. Marking codes Type number Marking code PBSS3540E 1T PBSS3540E_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 2 of 11 PBSS3540E NXP Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −40 V VCEO collector-emitter voltage open base - −40 V VEBO emitter-base voltage open collector - −6 V IC collector current (DC) - −500 mA ICM peak collector current - −1 A IBM peak base current - −100 mA Ptot total power dissipation [1] - 150 mW [2] - 250 mW Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 006aaa412 300 Ptot (mW) (1) 200 (2) 100 0 0 40 80 120 160 Tamb (°C) (1) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, standard footprint Fig 1. Power derating curves PBSS3540E_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 3 of 11 PBSS3540E NXP Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - - 833 K/W [2] - - 500 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 006aaa413 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.5 0.33 0.75 0.2 0.1 0.05 0.02 10 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 t p (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values PBSS3540E_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 4 of 11 PBSS3540E NXP Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter ICBO collector-base cut-off current Conditions Min Typ Max Unit VCB = −40 V; IE = 0 A - - −100 nA VCB = −40 V; IE = 0 A; Tj = 150 °C - - −50 μA nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 hFE DC current gain VCE = −2 V; IC = −10 mA 200 - - VCEsat collector-emitter saturation voltage VCE = −2 V; IC = −100 mA [1] 150 - - VCE = −2 V; IC = −500 mA [1] 40 - - IC = −10 mA; IB = −0.5 mA - - −50 mV IC = −100 mA; IB = −5 mA - - −130 mV IC = −200 mA; IB = −10 mA - - −200 mV IC = −500 mA; IB = −50 mA [1] - - −350 mV - 440 700 mΩ - - −1.2 V RCEsat collector-emitter saturation resistance IC = −500 mA; IB = −50 mA [1] VBEsat base-emitter saturation voltage IC = −500 mA; IB = −50 mA [1] VBEon base-emitter turn-on voltage VCE = −2 V; IC = −100 mA - - −1.1 V fT transition frequency VCE = −5 V; IC = −100 mA; f = 100 MHz 100 300 - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - - 10 pF [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. PBSS3540E_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 5 of 11 PBSS3540E NXP Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 006aaa388 600 VBE (V) −0.9 (1) hFE 400 006aaa389 −1.1 (1) (2) −0.7 (2) (3) −0.5 (3) 200 −0.3 0 −10−1 −1 −10 −102 IC (mA) −103 − 0.1 −10−1 VCE = −2 V −1 −102 IC (mA) −103 VCE = −2 V (1) Tamb = 100 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. −10 (3) Tamb = 100 °C DC current gain as a function of collector current; typical values Fig 4. 006aaa390 −1 Base-emitter voltage as a function of collector current; typical values 006aaa391 −1 VCEsat (V) VCEsat (V) −10−1 −10−1 (1) (1) (2) (3) (2) (3) −10−2 −10−1 −1 −10 −102 −103 IC (mA) −10−2 −10−1 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Collector-emitter saturation voltage as a function of collector current; typical values Fig 6. −102 −103 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values PBSS3540E_2 Product data sheet −10 Tamb = 25 °C IC/IB = 20 Fig 5. −1 © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 6 of 11 PBSS3540E NXP Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 006aaa392 −1.1 VBEsat (V) −0.9 006aaa393 103 RCEsat (Ω) (1) 102 (2) −0.7 (3) 10 (1) (2) (3) −0.5 1 −0.3 −0.1 −10−1 −1 −10 −102 IC (mA) −103 10−1 −10−1 IC/IB = 20 −1 −102 IC (mA) −103 IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = −55 °C Fig 7. −10 Base-emitter saturation voltage as a function of collector current; typical values 006aaa394 −1 IB (mA) = −30 IC −27 (A) −24 −21 −0.8 −18 Fig 8. Collector-emitter saturation resistance as a function of collector current; typical values 006aaa395 103 RCEsat (Ω) 102 −15 −12 −9 −0.6 −6 10 −3 −0.4 (1) (2) 1 −0.2 0 0 −1 −2 −3 −4 −5 VCE (V) Tamb = 25 °C (3) 10−1 −10−1 −1 −10 −102 IC (mA) −103 Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 9. Collector current as a function of collector-emitter voltage; typical values Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values PBSS3540E_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 7 of 11 PBSS3540E NXP Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 8. Package outline 0.95 0.60 1.8 1.4 3 0.45 0.15 1.75 0.9 1.45 0.7 1 2 0.30 0.15 0.25 0.10 1 Dimensions in mm 04-11-04 Fig 11. Package outline SOT416 (SC-75) 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS3540E [1] Package SOT416 Description Packing quantity 4 mm pitch, 8 mm tape and reel 3000 10000 -115 -135 For further information and the availability of packing methods, see Section 13. 10. Soldering 2.2 0.6 1.1 0.7 2 2.0 3 0.85 1.5 1 0.6 (3x) 1.9 Dimensions in mm 0.5 (3x) msa438 solder lands solder resist solder paste occupied area Reflow soldering is the only recommended soldering method. Fig 12. Reflow soldering footprint PBSS3540E_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 8 of 11 PBSS3540E NXP Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS3540E_2 20091211 Product data sheet - PBSS3540E_1 Modifications: PBSS3540E_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • • Figure 4 “Base-emitter voltage as a function of collector current; typical values”: updated Figure 12 “Reflow soldering footprint”: updated 20050503 Product data sheet - PBSS3540E_2 Product data sheet - © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 9 of 11 PBSS3540E NXP Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PBSS3540E_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 10 of 11 PBSS3540E NXP Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 December 2009 Document identifier: PBSS3540E_2