INTEGRATED CIRCUITS NE/SA/SE5205A Wide-band high-frequency amplifier Product specification RF Communications Handbook Philips Semiconductors 1992 Feb 24 Philips Semiconductors Product specification Wide-band high-frequency amplifier NE/SA/SE5205A DESCRIPTION PIN CONFIGURATIONS The NE/SA/SE5205A family of wideband amplifiers replace the NE/SA/SE5205 family. The ‘A’ parts are fabricated on a rugged 2µm bipolar process featuring excellent statistical process control. Electrical performance is nominally identical to the original parts. N, D Packages The NE/SA/SE5205A is a high-frequency amplifier with a fixed insertion gain of 20dB. The gain is flat to ±0.5dB from DC to 450MHz, and the -3dB bandwidth is greater than 600MHz in the EC package. This performance makes the amplifier ideal for cable TV applications. For lower frequency applications, the part is also available in industrial standard dual in-line and small outline packages. The NE/SA/SE5205A operates with a single supply of 6V, and only draws 24mA of supply current, which is much less than comparable hybrid parts. The noise figure is 4.8dB in a 75Ω system and 6dB in a 50Ω system. VCC 1 8 VCC 20dB VIN 2 7 VOUT GND 3 6 GND GND 4 5 GND TOP VIEW SR00215 Figure 1. Pin Configuration FEATURES • 600MHz bandwidth • 20dB insertion gain • 4.8dB (6dB) noise figure ZO=75Ω (ZO=50Ω) • No external components required • Input and output impedances matched to 50/75Ω systems • Surface mount package available • MIL-STD processing available • 2000V ESD protection Until now, most RF or high-frequency designers had to settle for discrete or hybrid solutions to their amplification problems. Most of these solutions required trade-offs that the designer had to accept in order to use high-frequency gain stages. These include high-power consumption, large component count, transformers, large packages with heat sinks, and high part cost. The NE/SA/SE5205A solves these problems by incorporating a wide-band amplifier on a single monolithic chip. The part is well matched to 50 or 75Ω input and output impedances. The Standing Wave Ratios in 50 and 75Ω systems do not exceed 1.5 on either the input or output from DC to the -3dB bandwidth limit. Since the part is a small monolithic IC die, problems such as stray capacitance are minimized. The die size is small enough to fit into a very cost-effective 8-pin small-outline (SO) package to further reduce parasitic effects. APPLICATIONS • 75Ω cable TV decoder boxes • Antenna amplifiers • Amplified splitters • Signal generators • Frequency counters • Oscilloscopes • Signal analyzers • Broad-band LANs • Fiber-optics • Modems • Mobile radio • Security systems • Telecommunications No external components are needed other than AC coupling capacitors because the NE/SA/SE5205A is internally compensated and matched to 50 and 75Ω. The amplifier has very good distortion specifications, with second and third-order intermodulation intercepts of +24dBm and +17dBm respectively at 100MHz. The device is ideally suited for 75Ω cable television applications such as decoder boxes, satellite receiver/decoders, and front-end amplifiers for TV receivers. It is also useful for amplified splitters and antenna amplifiers. The part is matched well for 50Ω test equipment such as signal generators, oscilloscopes, frequency counters and all kinds of signal analyzers. Other applications at 50Ω include mobile radio, CB radio and data/video transmission in fiber optics, as well as broad-band LANs and telecom systems. A gain greater than 20dB can be achieved by cascading additional NE/SA/SE5205As in series as required, without any degradation in amplifier stability. ORDERING INFORMATION TEMPERATURE RANGE ORDER CODE DWG # 8-Pin Plastic Small Outline (SO) package DESCRIPTION 0 to +70°C NE5205AD SOT96-1 8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE5205AN SOT97-1 8-Pin Plastic Small Outline (SO) package -40 to +85°C SA5205AD SOT96-1 8-Pin Plastic Dual In-Line Package (DIP) -40 to +85°C SA5205AN SOT97-1 8-Pin Plastic Dual In-Line Package (DIP) -55 to +125°C SE5205AN SOT97-1 1992 Feb 24 2 853-1598 05759 Philips Semiconductors Product specification Wide-band high-frequency amplifier NE/SA/SE5205A EQUIVALENT SCHEMATIC VCC R1 R2 Q3 VOUT Q6 Q2 R3 VIN Q1 Q4 RE2 RF1 RE1 Q5 RF2 SR00216 Figure 2. Equivalent Schematic ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT VCC Supply voltage 9 V VAC AC input voltage 5 VP-P TA Operating ambient temperature range NE grade 0 to +70 °C SA grade -40 to +85 °C SE grade -55 to +125 °C 1160 780 mW mW PDMAX Maximum power dissipation, TA=25°C (still-air)1, 2 N package D package NOTES: 1. Derate above 25°C, at the following rates: N package at 9.3mW/°C D package at 6.2mW/°C 2. See “Power Dissipation Considerations” section. 1992 Feb 24 3 Philips Semiconductors Product specification Wide-band high-frequency amplifier NE/SA/SE5205A DC ELECTRICAL CHARACTERISTICS VCC=6V, ZS=ZL=ZO=50Ω and TA=25°C in all packages, unless otherwise specified. SYMBOL PARAMETER VCC Operating supply voltage range ICC Supply current S21 Insertion gain S11 Input return loss S22 Output return loss S12 Isolation TEST CONDITIONS SE5205A Min Typ NE/SA5205A Max Min 6.5 6.5 5 5 Over temperature 5 5 Over temperature 20 19 25 25 32 33 20 19 f=100MHz Over temperature 17 16.5 19 21 21.5 17 16.5 f=100MHz D, N DC - fMAX D, N 25 12 f=100MHz D, N DC - fMAX DC - fMAX 25 25 32 33 mA mA 19 21 21.5 dB 27 12 -25 -18 UNIT V V 25 27 Max 8 8 12 12 f=100MHz Typ -25 -18 dB dB dB tR Rise time tP Propagation delay BW Bandwidth ±0.5dB D, N fMAX Bandwidth -3dB D, N Noise figure (75Ω) f=100MHz 4.8 4.8 dB Noise figure (50Ω) f=100MHz 6.0 6.0 dB Saturated output power f=100MHz +7.0 +7.0 dBm 1dB gain compression f=100MHz +4.0 +4.0 dBm Third-order intermodulation intercept (output) f=100MHz +17 +17 dBm Second-order intermodulation intercept (output) f=100MHz +24 +24 dBm 1992 Feb 24 4 500 500 500 500 ps 300 450 MHz 550 ps MHz Philips Semiconductors Product specification NE/SA/SE5205A 11 10 9 8 7 6 5 4 3 2 1 0 –1 –2 –3 –4 –5 –6 35 34 32 30 OUTPUT LEVEL—dBm SUPPLY CURRENT—mA Wide-band high-frequency amplifier TA = 25oC 28 26 24 22 20 18 16 5 5.5 6 6.5 7 7.5 8 VCC = 7V VCC = 6V ZO = 50Ω TA = 25oC 101 SUPPLY VOLTAGE—V 2 4 SR00217 OUTPUT LEVEL—dBm NOISE FIGURE—dBm ZO = 50Ω TA = 25oC vcc = 7v vcc = 6v 7 vcc = 5v 6 5 101 2 4 6 8 102 2 FREQUENCY—MHz 4 6 6 8 103 SR00218 VCC = 7V VCC = 5V ZO = 50Ω TA = 25oC 2 4 6 8 102 2 FREQUENCY—MHz 4 6 8 103 SR00220 Figure 8. 1dB Gain Compression vs Frequency SECOND–ORDER INTERCEPT—dBM vcc = 8v INSERTION GAIN—dB 4 VCC = 6V 101 vcc = 7v 20 vcc = 6v vcc = 5v ZO = 50Ω TA = 25oC 10 40 35 30 25 ZO = 50Ω TA = 25oC 20 15 10 101 2 4 6 8 102 2 4 6 8 103 FREQUENCY—MHz 4 6 7 8 POWER SUPPLY VOLTAGE—V 9 10 SR00222 Figure 9. Second-Order Output Intercept vs Supply Voltage 30 THIRD–ORDER INTERCEPT—dBm 25 TA = 55oC TA = 25oC 20 TA = 85oC TA = 125oC 15 VCC = 8V ZO = 50Ω 10 5 SR00221 Figure 5. Insertion Gain vs Frequency (S21) INSERTION GAIN—dB 2 VCC = 8V SR00219 Figure 4. Noise Figure vs Frequency 101 2 4 6 8 102 2 FREQUENCY—MHz 4 6 25 20 SR00223 ZO = 50Ω TA = 25oC 15 10 5 8 103 Figure 6. Insertion Gain vs Frequency (S21) 1992 Feb 24 10 9 8 7 6 5 4 3 2 1 0 –1 –2 –3 –4 –5 –6 8 103 25 15 8 102 Figure 7. Saturated Output Power vs Frequency 9 vcc = 8v 6 FREQUENCY—MHz Figure 3. Supply Current vs Supply Voltage 8 VCC = 8V VCC = 5V 4 5 6 7 8 9 POWER SUPPLY VOLTAGE—V 10 SR00224 Figure 10. Third-Order Intercept vs Supply Voltage 5 Philips Semiconductors Product specification Wide-band high-frequency amplifier NE/SA/SE5205A 2.0 10 1.9 TA = 25oC VCC = 6V INPUT VSWR 1.7 –15 ISOLATION—dB 1.8 . 1.6 1.5 1.4 ZO = 75Ω 1.3 VCC = 6V ZO = 50Ω TA = 25oC –20 –25 1.2 ZO = 50Ω 1.1 1.0 101 –30 2 4 6 8 102 2 4 6 8 103 101 2 4 6 8 102 2 4 6 8 103 FREQUENCY—MHz FREQUENCY—MHz SR00225 SR00226 Figure 11. Input VSWR vs Frequency Figure 14. Isolation vs Frequency (S12) 2.0 25 1.9 INPUT VSWR 1.7 vcc = 8v Tamb = 25oC VCC = 6V ISOLATION GAIN—dB 1.8 1.6 1.5 1.4 1.3 ZO = 75Ω 1.2 1.1 1.0 101 vcc = 6v vcc = 5v 15 ZO = 75Ω TA = 25oC 10 2 4 6 8 102 2 4 6 8 103 101 2 4 6 8 102 2 FREQUENCY—MHz 6 8 103 SR00228 Figure 15. Insertion Gain vs Frequency (S21) 40 25 TA = –55oC TA = 25oC INSERTION GAIN—dB 35 30 OUTPUT 25 VCC = 6V ZO = 50Ω TA = 25oC 20 INPUT 20 TA = 85oC TA = 125oC 15 ZO = 75Ω VCC = 6V 15 10 4 SR00227 Figure 12. Output VSWR vs Frequency INPUT RETURN LOSS—dB 20 ZO = 50Ω FREQUENCY—MHz OUTPUT RETURN LOSS—dB vcc = 7v 101 2 4 6 8 102 2 4 10 6 8 103 FREQUENCY—MHz 101 2 4 6 8 102 2 4 6 8 103 FREQUENCY—MHz SR00229 SR00230 Figure 13. Input (S11) and Output (S22) Return Loss vs Frequency 1992 Feb 24 Figure 16. Insertion Gain vs Frequency (S21) 6 Philips Semiconductors Product specification Wide-band high-frequency amplifier NE/SA/SE5205A where RE1=12Ω, VBE=0.8V, IC1=5mA and IC3=7mA (currents rated at VCC=6V). THEORY OF OPERATION The design is based on the use of multiple feedback loops to provide wide-band gain together with good noise figure and terminal impedance matches. Referring to the circuit schematic in Figure 17, the gain is set primarily by the equation: V OUT V IN RF1 R E1 Under the above conditions, VIN is approximately equal to 1V. Level shifting is achieved by emitter-follower Q3 and diode Q4 which provide shunt feedback to the emitter of Q1 via RF1. The use of an emitter-follower buffer in this feedback loop essentially eliminates problems of shunt feedback loading on the output. The value of RF1=140Ω is chosen to give the desired nominal gain. The DC output voltage VOUT can be determined by: (1) R E1 which is series-shunt feedback. There is also shunt-series feedback due to RF2 and RE2 which aids in producing wideband terminal impedances without the need for low value input shunting resistors that would degrade the noise figure. For optimum noise performance, RE1 and the base resistance of Q1 are kept as low as possible while RF2 is maximized. VOUT=VCC-(IC2+IC6)R2,(4) where VCC=6V, R2=225Ω, IC2=8mA and IC6=5mA. The noise figure is given by the following equation: From here it can be seen that the output voltage is approximately 3.1V to give relatively equal positive and negative output swings. Diode Q5 is included for bias purposes to allow direct coupling of RF2 to the base of Q1. The dual feedback loops stabilize the DC operating point of the amplifier. NF = r 10 log 1 b R E1 RO dB KT 2qlC1 (2) The output stage is a Darlington pair (Q6 and Q2) which increases the DC bias voltage on the input stage (Q1) to a more desirable value, and also increases the feedback loop gain. Resistor R0 optimizes the output VSWR (Voltage Standing Wave Ratio). Inductors L1 and L2 are bondwire and lead inductances which are roughly 3nH. These improve the high-frequency impedance matches at input and output by partially resonating with 0.5pF of pad and package capacitance. where IC1=5.5mA, RE1=12Ω, rb=130Ω, KT/q=26mV at 25°C and R0=50 for a 50Ω system and 75 for a 75Ω system. The DC input voltage level VIN can be determined by the equation: VIN=VBE1+(IC1+IC3) RE1 VCC R2 225 R1 650 R0 L2 10 3nH Q3 VOUT Q6 VIN Q2 L2 Q4 Q1 R3 140 3nH RF1 140 RE2 12 RE1 12 Q5 RF2 200 SR00231 Figure 17. Schematic Diagram 1992 Feb 24 7 Philips Semiconductors Product specification Wide-band high-frequency amplifier NE/SA/SE5205A output pins of the device. This circuit is shown in Figure 18. Follow these recommendations to get the best frequency response and noise immunity. The board design is as important as the integrated circuit design itself. POWER DISSIPATION CONSIDERATIONS When using the part at elevated temperature, the engineer should consider the power dissipation capabilities of each package. At the nominal supply voltage of 6V, the typical supply current is 25mA (32mA Max). For operation at supply voltages other than 6V, see Figure 3 for ICC versus VCC curves. The supply current is inversely proportional to temperature and varies no more than 1mA between 25°C and either temperature extreme. The change is 0.1% per over the range. SCATTERING PARAMETERS The primary specifications for the NE/SA/SE5205A are listed as S-parameters. S-parameters are measurements of incident and reflected currents and voltages between the source, amplifier and load as well as transmission losses. The parameters for a two-port network are defined in Figure 19. The recommended operating temperature ranges are air-mount specifications. Better heat sinking benefits can be realized by mounting the D package body against the PC board plane. Actual S-parameter measurements using an HP network analyzer (model 8505A) and an HP S-parameter tester (models 8503A/B) are shown in Figure 20. PC BOARD MOUNTING Values for the figures below are measured and specified in the data sheet to ease adaptation and comparison of the NE/SA/SE5205A to other high-frequency amplifiers. In order to realize satisfactory mounting of the NE5205A to a PC board, certain techniques need to be utilized. The board must be double-sided with copper and all pins must be soldered to their respective areas (i.e., all GND and VCC pins on the SO package). The power supply should be decoupled with a capacitor as close to the VCC pins as possible and an RF choke should be inserted between the supply and the device. Caution should be exercised in the connection of input and output pins. Standard microstrip should be observed wherever possible. There should be no solder bumps or burrs or any obstructions in the signal path to cause launching problems. The path should be as straight as possible and lead lengths as short as possible from the part to the cable connection. Another important consideration is that the input and output should be AC coupled. This is because at VCC=6V, the input is approximately at 1V while the output is at 3.1V. The output must be decoupled into a low impedance system or the DC bias on the output of the amplifier will be loaded down causing loss of output power. The easiest way to decouple the entire amplifier is by soldering a high frequency chip capacitor directly to the input and VCC RF CHOKE DECOUPLING CAPACITOR NE5205A VIN AC COUPLING CAPACITOR VOUT AC COUPLING CAPACITOR SR00232 Figure 18. Circuit Schematic for Coupling and Power Supply Decoupling POWER REFLECTED FROM INPUT PORT S11 — INPUT RETURN LOSS S11 = S12 — REVERSE TRANSMISSION LOSS OSOLATION S12 = REVERSE TRANSDUCER POWER GAIN S21 — FORWARD TRANSMISSION LOSS OR INSERTION GAIN S21 = TRANSDUCER POWER GAIN S22 — OUTPUT RETURN LOSS S22 = S21 S11 POWER AVAILABLE FROM GENERATOR AT INPUT PORT S22 S12 a. Two-Port Network Defined b. Figure 19. 1992 Feb 24 8 POWER REFLECTED FROM OUTPUT PORT POWER AVAILABLE FROM GENERATOR AT OUTPUT PORT SR00233 Philips Semiconductors Product specification Wide-band high-frequency amplifier NE/SA/SE5205A 50Ω System 75Ω System 25 25 vcc = 8v ISOLATION GAIN—dB INSERTION GAIN—dB vcc = 8v vcc = 7v 20 vcc = 6v 15 vcc = 5v vcc = 7v 20 vcc = 6v vcc = 5v 15 ZO = 75Ω TA = 25oC ZO = 50Ω TA = 25oC 10 101 10 101 2 4 6 8 102 2 4 6 8 103 2 4 8 102 2 4 6 8 103 b. Insertion Gain vs Frequency (S21) 10 10 –15 –15 ISOLATION—dB ISOLATION—dB a. Insertion Gain vs Frequency (S21) VCC = 6V ZO = 50Ω TA = 25oC –20 6 FREQUENCY—MHz FREQUENCY—MHz ZO = 75Ω TA = 25oC VCC = 6V –20 –25 –25 –30 –30 101 2 4 6 8 102 2 4 6 101 8 103 2 4 FREQUENCY—MHz c. Isolation vs Frequency (S12) INPUT RETURN LOSS—dB OUTPUT RETURN LOSS—dB INPUT RETURN LOSS—dB OUTPUT RETURN LOSS—dB 4 6 8 103 40 35 30 OUTPUT 25 VCC = 6V ZO = 50Ω TA = 25oC 20 INPUT 15 35 30 2 4 6 8 102 2 4 6 8 103 OUTPUT 25 20 INPUT VCC = 6V ZO = 75Ω TA = 25oC 15 10 101 FREQUENCY—MHz 101 2 4 6 8 102 2 4 6 8 103 FREQUENCY—MHz e. Input (S11) and Output (S22) Return Loss vs Frequency f. Input (S11) and Output (S22) Return Loss vs Frequency Figure 20. 1992 Feb 24 2 d. S12 Isolation vs Frequency 40 10 6 8 102 FREQUENCY—MHz 9 SR00234 Philips Semiconductors Product specification Wide-band high-frequency amplifier NE/SA/SE5205A The most important parameter is S21. It is defined as the square root of the power gain, and, in decibels, is equal to voltage gain as shown below: 1dB from its low power value. The decrease is due to nonlinearities in the amplifier, an indication of the point of transition between small-signal operation and the large signal mode. ZD=ZIN=ZOUT for the NE/SA/SE5205A The saturated output power is a measure of the amplifier’s ability to deliver power into an external load. It is the value of the amplifier’s output power when the input is heavily overdriven. This includes the sum of the power in all harmonics. NE/SA/ SE5205A 2 P IN V IN ZD P OUT P IN P OUT V OUT ZD V OUT ZD 2 ZD 2 2 V IN ZD V OUT V IN INTERMODULATION INTERCEPT TESTS 2 2 PI The intermodulation intercept is an expression of the low level linearity of the amplifier. The intermodulation ratio is the difference in dB between the fundamental output signal level and the generated distortion product level. The relationship between intercept and intermodulation ratio is illustrated in Figure 22, which shows product output levels plotted versus the level of the fundamental output for two equal strength output signals at different frequencies. The upper line shows the fundamental output plotted against itself with a 1dB to 1dB slope. The second and third order products lie below the fundamentals and exhibit a 2:1 and 3:1 slope, respectively. PI=VI 2 PI=Insertion Power Gain VI=Insertion Voltage Gain Measured value for the NE/SA/SE5205A = |S21 | 2 = 100 P I The intercept point for either product is the intersection of the extensions of the product curve with the fundamental output. P OUT | S 21 | 2 100 P IN V OUT P I S 21 10 and V I V IN The intercept point is determined by measuring the intermodulation ratio at a single output level and projecting along the appropriate product slope to the point of intersection with the fundamental. When the intercept point is known, the intermodulation ratio can be determined by the reverse process. The second order IMR is equal to the difference between the second order intercept and the fundamental output level. The third order IMR is equal to twice the difference between the third order intercept and the fundamental output level. These are expressed as: In decibels: PI(dB) =10 Log | S21 | 2 = 20dB VI(dB) = 20 Log S21 = 20dB ∴ PI(dB) = VI(dB) = S21(dB) = 20dB IP2=POUT+IMR2 Also measured on the same system are the respective voltage standing wave ratios. These are shown in Figure 21. The VSWR can be seen to be below 1.5 across the entire operational frequency range. IP3=POUT+IMR3/2 where POUT is the power level in dBm of each of a pair of equal level fundamental output signals, IP2 and IP3 are the second and third order output intercepts in dBm, and IMR2 and IMR3 are the second and third order intermodulation ratios in dB. The intermodulation intercept is an indicator of intermodulation performance only in the small signal operating range of the amplifier. Above some output level which is below the 1dB compression point, the active device moves into large-signal operation. At this point the intermodulation products no longer follow the straight line output slopes, and the intercept description is no longer valid. It is therefore important to measure IP2 and IP3 at output levels well below 1dB compression. One must be careful, however, not to select too low levels because the test equipment may not be able to recover the signal from the noise. For the NE/SA/SE5205A we have chosen an output level of -10.5dBm with fundamental frequencies of 100.000 and 100.01MHz, respectively. Relationships exist between the input and output return losses and the voltage standing wave ratios. These relationships are as follows: INPUT RETURN LOSS=S11dB S11dB=20 Log | S11 | OUTPUT RETURN LOSS=S22dB S22dB=20 Log | S22 | INPUT VSWR=≤1.5 OUTPUT VSWR=≤1.5 1dB GAIN COMPRESSION AND SATURATED OUTPUT POWER The 1dB gain compression is a measurement of the output power level where the small-signal insertion gain magnitude decreases 1992 Feb 24 10 Philips Semiconductors Product specification Wide-band high-frequency amplifier NE/SA/SE5205A 2.0 2.0 1.9 INPUT VSWR 1.7 1.9 TA = 25oC VCC = 6V 1.8 OUTPUT VSWR 1.8 . 1.6 1.5 1.4 1.3 ZO = 75Ω 1.2 1.1 1.0 101 Tamb = 25oC VCC = 6V 1.7 1.6 1.5 1.4 1.3 ZO = 75Ω 1.2 ZO = 50Ω 2 ZO = 50Ω 1.1 4 6 8 102 2 FREQUENCY—MHz 4 1.0 101 6 8 103 2 a. Input VSWR vs Frequency 4 6 8 102 2 FREQUENCY—MHz 4 b. Output VSWR vs Frequency 6 8 103 SR00235 Figure 21. Input/Output VSWR vs Frequency ADDITIONAL READING ON SCATTERING PARAMETERS “S-Parameter Techniques for Faster, More Accurate Network Design”, HP App Note 95-1, Richard W. Anderson, 1967, HP Journal. For more information regarding S-parameters, please refer to High-Frequency Amplifiers by Ralph S. Carson of the University of Missouri, Rolla, Copyright 1985; published by John Wiley & Sons, Inc. “S-Parameter Design”, HP App Note 154, 1972. +30 THIRD ORDER INTERCEPT POINT +20 1dB COMPRESSION POINT +10 OUTPUT LEVEL dBm 2ND ORDER INTERCEPT POINT FUNDAMENTAL RESPONSE 0 -10 2ND ORDER RESPONSE -20 3RD ORDER RESPONSE -30 -40 -60 -50 -40 -30 -20 -10 0 +10 +20 +30 +40 INPUT LEVEL dBm SR00236 Figure 22. 1992 Feb 24 11 Philips Semiconductors Product specification Wide-band high-frequency amplifier NE/SA/SE5205A SO8: plastic small outline package; 8 leads; body width 3.9mm 1992 Feb 24 12 SOT96-1 Philips Semiconductors Product specification Wide-band high-frequency amplifier NE/SA/SE5205A DIP8: plastic dual in-line package; 8 leads (300 mil) 1992 Feb 24 SOT97-1 13 Philips Semiconductors Product specification Wide-band high-frequency amplifier NE/SA/SE5205A DEFINITIONS Data Sheet Identification Product Status Definition Objective Specification Formative or in Design This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice. Preliminary Specification Preproduction Product This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product Specification Full Production This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product. Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. LIFE SUPPORT APPLICATIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices, or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381 1992 Feb 24 Philips Semiconductors and Philips Electronics North America Corporation register eligible circuits under the Semiconductor Chip Protection Act. Copyright Philips Electronics North America Corporation 1993 All rights reserved. Printed in U.S.A. 14