AlGaAs / InGaAs HEMT CFY 77 ________________________________________________________________________________________________________ Datasheet Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CFY77-08 HG Q62702-F1549 MW-4 CFY77-10 HH Q62702-F1559 MW-4 Maximum ratings Drain-source voltage Symbol VDS VDG Unit 3.5 V 4.5 V -3.0 V Drain current VGS ID 60 mA Channel temperature TCh 150 °C Storage temperature range Tstg -65...+150 °C Total power dissipation (TS < 51°C) 2) Ptot 180 mW RthChS 550 K/W Drain-gate voltage Gate-source voltage Thermal resistance Channel-soldering point source 1) Dimensions see chapter Package Outlines 2) TS: Temperature measured at soldering point Siemens Aktiengesellschaft pg. 1/4 11.01.1996 HL EH PD 21 AlGaAs / InGaAs HEMT CFY 77 ________________________________________________________________________________________________________ Electrical characteristics at TA = 25°C unless otherwise specified Characteristics Drain-source saturation current VDS = 2 V VGS = 0 V Pinch-off voltage VDS = 2 V ID = 1 mA Gate leakage current VDS = 2 V ID = 15 mA Transconductance VDS = 2 V ID = 15 mA ID = 15 mA min typ max Unit IDSS 15 30 60 mA VGS(P) -2 -0.7 -0.2 V IG - 0.05 2 µA gm 50 65 - mS F Noise figure VDS = 2 V Symbol - CFY77-08 CFY77-10 Associated gain VDS = 2 V dB f = 12 GHz ID = 15 mA f = 12 GHz 0.8 1 Ga dB 10 9.5 CFY77-08 CFY77-10 Siemens Aktiengesellschaft 0.7 0.9 pg. 2/4 10.5 10 - 11.01.1996 HL EH PD 21 CFY 77 AlGaAs / InGaAs HEMT ________________________________________________________________________________________________________ Total Power Dissipation Ptot = f (TS;TA) Package mounted on alumina 200 P tot 180 [ mW ] 160 140 120 TA 100 TS 80 60 40 20 0 0 50 100 150 TA ; TS [ °C ] Typical Common Source Noise Parameters ID = 15 mA UDS = 2.0 V f Fmin Ga Γopt GHz 2 4 6 8 10 12 14 dB 0.36 0.44 0.51 0.58 0.65 0.72 0.80 dB 19.4 15.9 13.9 12.4 11.2 10.4 9.7 MAG 0.79 0.72 0.63 0.56 0.52 0.54 0.59 Siemens Aktiengesellschaft Rn ANG 27 60 92 134 180 -135 -108 pg. 3/4 Ω 13.7 10.1 5.85 2.35 1.1 2.9 7.15 Z0 = 50 Ω rn 0.274 0.202 0.117 0.047 0.022 0.058 0.143 N F50Ω 0.03 0.04 0.05 0.06 0.07 0.08 0.10 dB 1.2 1.1 1.05 1.0 1.0 1.1 1.5 11.01.1996 HL EH PD 21 CFY 77 AlGaAs / InGaAs HEMT ________________________________________________________________________________________________________ Typical Common Source S-Parameters ID = 15 mA GHz Mag 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 0.98 0.94 0.88 0.82 0.77 0.72 0.66 0.63 0.62 0.62 0.64 0.64 0.66 0.67 0.69 0.73 0.76 0.78 0.77 S11 Ang -22.8 -46.1 -68.4 -90.6 -110.8 -131.4 -153.6 -175.2 164.4 145.0 128.3 113.1 101.3 89.4 73.6 59.2 51.7 45.4 36.2 Siemens Aktiengesellschaft Mag 5.55 5.40 5.09 4.77 4.45 4.16 3.88 3.58 3.29 3.01 2.76 2.51 2.32 2.18 2.06 1.85 1.65 1.56 1.51 UD = 2.0 V S21 Ang Mag 159.6 139.3 120.1 101.2 84.0 67.3 50.2 34.5 18.9 4.0 -10.3 -23.5 -35.7 -48.2 -62.4 -75.9 -86.5 -96.7 -108.6 0.030 0.053 0.074 0.089 0.101 0.112 0.119 0.122 0.120 0.119 0.119 0.114 0.114 0.116 0.116 0.115 0.112 0.115 0.121 pg. 4/4 Z0 = 50 Ω S12 Ang 87.5 57.8 44.9 30.7 18.1 7.9 -3.3 -12.7 -22.0 -29.5 -37.4 -44.0 -47.3 -53.1 -58.6 -65.8 -69.4 -72.3 -76.7 Mag 0.633 0.60 0.54 0.48 0.42 0.35 0.28 0.22 0.16 0.14 0.15 0.18 0.23 0.25 0.28 0.36 0.39 0.42 0.44 S22 Ang -16.3 -32.5 -48.0 -63.3 -77.5 -92.6 -110.8 -132.0 -157.3 177.3 136.2 115.4 100.9 91.0 75.4 57.1 53.1 43.8 38.8 11.01.1996 HL EH PD 21