INFINEON CFY77

AlGaAs / InGaAs HEMT
CFY 77
________________________________________________________________________________________________________
Datasheet
Features
* Very low noise
* Very high gain
* For low noise front end amplifiers up to 20 GHz
* For DBS down converters
ESD:
Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(taped)
Package 1)
CFY77-08
HG
Q62702-F1549
MW-4
CFY77-10
HH
Q62702-F1559
MW-4
Maximum ratings
Drain-source voltage
Symbol
VDS
VDG
Unit
3.5
V
4.5
V
-3.0
V
Drain current
VGS
ID
60
mA
Channel temperature
TCh
150
°C
Storage temperature range
Tstg
-65...+150
°C
Total power dissipation (TS < 51°C) 2)
Ptot
180
mW
RthChS
550
K/W
Drain-gate voltage
Gate-source voltage
Thermal resistance
Channel-soldering point source
1) Dimensions see chapter Package Outlines
2) TS: Temperature measured at soldering point
Siemens Aktiengesellschaft
pg. 1/4
11.01.1996
HL EH PD 21
AlGaAs / InGaAs HEMT
CFY 77
________________________________________________________________________________________________________
Electrical characteristics at TA = 25°C
unless otherwise specified
Characteristics
Drain-source saturation current
VDS = 2 V
VGS = 0 V
Pinch-off voltage
VDS = 2 V
ID = 1 mA
Gate leakage current
VDS = 2 V
ID = 15 mA
Transconductance
VDS = 2 V
ID = 15 mA
ID = 15 mA
min
typ
max
Unit
IDSS
15
30
60
mA
VGS(P)
-2
-0.7
-0.2
V
IG
-
0.05
2
µA
gm
50
65
-
mS
F
Noise figure
VDS = 2 V
Symbol
-
CFY77-08
CFY77-10
Associated gain
VDS = 2 V
dB
f = 12 GHz
ID = 15 mA
f = 12 GHz
0.8
1
Ga
dB
10
9.5
CFY77-08
CFY77-10
Siemens Aktiengesellschaft
0.7
0.9
pg. 2/4
10.5
10
-
11.01.1996
HL EH PD 21
CFY 77
AlGaAs / InGaAs HEMT
________________________________________________________________________________________________________
Total Power Dissipation Ptot = f (TS;TA)
Package mounted on alumina
200
P
tot
180
[ mW ]
160
140
120
TA
100
TS
80
60
40
20
0
0
50
100
150
TA ; TS [ °C ]
Typical Common Source Noise Parameters
ID = 15 mA
UDS = 2.0 V
f
Fmin
Ga
Γopt
GHz
2
4
6
8
10
12
14
dB
0.36
0.44
0.51
0.58
0.65
0.72
0.80
dB
19.4
15.9
13.9
12.4
11.2
10.4
9.7
MAG
0.79
0.72
0.63
0.56
0.52
0.54
0.59
Siemens Aktiengesellschaft
Rn
ANG
27
60
92
134
180
-135
-108
pg. 3/4
Ω
13.7
10.1
5.85
2.35
1.1
2.9
7.15
Z0 = 50 Ω
rn
0.274
0.202
0.117
0.047
0.022
0.058
0.143
N
F50Ω
0.03
0.04
0.05
0.06
0.07
0.08
0.10
dB
1.2
1.1
1.05
1.0
1.0
1.1
1.5
11.01.1996
HL EH PD 21
CFY 77
AlGaAs / InGaAs HEMT
________________________________________________________________________________________________________
Typical Common Source S-Parameters
ID = 15 mA
GHz
Mag
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
0.98
0.94
0.88
0.82
0.77
0.72
0.66
0.63
0.62
0.62
0.64
0.64
0.66
0.67
0.69
0.73
0.76
0.78
0.77
S11
Ang
-22.8
-46.1
-68.4
-90.6
-110.8
-131.4
-153.6
-175.2
164.4
145.0
128.3
113.1
101.3
89.4
73.6
59.2
51.7
45.4
36.2
Siemens Aktiengesellschaft
Mag
5.55
5.40
5.09
4.77
4.45
4.16
3.88
3.58
3.29
3.01
2.76
2.51
2.32
2.18
2.06
1.85
1.65
1.56
1.51
UD = 2.0 V
S21
Ang
Mag
159.6
139.3
120.1
101.2
84.0
67.3
50.2
34.5
18.9
4.0
-10.3
-23.5
-35.7
-48.2
-62.4
-75.9
-86.5
-96.7
-108.6
0.030
0.053
0.074
0.089
0.101
0.112
0.119
0.122
0.120
0.119
0.119
0.114
0.114
0.116
0.116
0.115
0.112
0.115
0.121
pg. 4/4
Z0 = 50 Ω
S12
Ang
87.5
57.8
44.9
30.7
18.1
7.9
-3.3
-12.7
-22.0
-29.5
-37.4
-44.0
-47.3
-53.1
-58.6
-65.8
-69.4
-72.3
-76.7
Mag
0.633
0.60
0.54
0.48
0.42
0.35
0.28
0.22
0.16
0.14
0.15
0.18
0.23
0.25
0.28
0.36
0.39
0.42
0.44
S22
Ang
-16.3
-32.5
-48.0
-63.3
-77.5
-92.6
-110.8
-132.0
-157.3
177.3
136.2
115.4
100.9
91.0
75.4
57.1
53.1
43.8
38.8
11.01.1996
HL EH PD 21