INFINEON CGY52

CGY 52
GaAs MMIC
________________________________________________________________________________________________________
Datasheet
* Two stages monolithic microwave IC (MMICAmplifier)
* All gold metallisation
* Chip fully passivated
* Operating voltage range: 2.7 to 5 V
* 50 Ω input / output
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(taped)
Package 1)
CGY 52
CGY52
Q68000-A8615
MW-7
Maximum ratings
Symbol
Unit
6
V
Channel temperature
VD
TCh
150
°C
Storage temperature range
Tstg
-55...+150
°C
Total power dissipation
Ptot
1000
mW
RthChS
RthJA
< 95
K/W
< 175
K/W
Drain voltage
(TS < 55°C) 2) 3)
Thermal resistance
Channel-soldering point (GND) 2)
Junction-ambient 4)
1)
2)
3)
4)
Dimensions see chapter Package Outlines
TS is measured on the source 2 lead at the soldering point of the pcb.
Please care for sufficient heat dissipation on the pcb!
Package mounted on alumina 15mm x16.7 mm x0.7 mm
Siemens Aktiengesellschaft
pg. 1/4
12.02.96
HL EH PD 21
CGY 52
GaAs MMIC
________________________________________________________________________________________________________
Electrical characteristics
TA = 25°C
VD = 4.5 V
RS = RL = 50Ω
unless otherwise specified
Characteristics
Drain current
Symbol
min
typ
max
Unit
ID
-
160
220
mA
G
13
14.5
12.5
14
15.5
13.5
-
dB
∆G
-
3
4
dB
-
4.8
-
dB
RLin
6.5
7.5
-
7.5
8.5
7.5
12.5
9
-
dB
RLout
9.5
-
10.5
10.5
12.5
11.5
-
dB
IP3
-
32
-
dBm
P-1dB
-
19
-
dBm
Power Gain
f = 200 MHz
f = 900 MHz
f = 1800 MHz
Gain flatness
f = 200 MHz to 1800 MHz
Noise figure
F
f = 900 MHz to 1800 MHz
Input return loss
f = 200 MHz to 300 MHz
f = 300 MHz to 1800 MHz
f = 200 MHz
f = 900 MHz
f = 1800 MHz
Output return loss
f = 200 MHz to 1800 MHz
f = 200 MHz
f = 900 MHz
f = 1800 MHz
Third order input intercept point
two-tone intermodulation test
f1 = 806 MHz, f2 = 810 MHz
P= = 10 dBm (both carriers)
1dB gain compression
f = 200 MHz to 1800 MHz
Siemens Aktiengesellschaft
pg. 2/4
12.02.96
HL EH PD 21
CGY 52
GaAs MMIC
________________________________________________________________________________________________________
Typical S-Parameters
VD = 4.5 V,
f/GHz
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
S11
VG = 0 V,
S21
Zo = 50Ω
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.63
0.36
0.30
0.26
0.24
0.22
0.23
0.26
0.31
0.37
0.40
0.43
0.43
-36
-38
-35
-33
-29
-20
-10
0
5
5
4
2
2
4.36
5.17
5.27
5.44
5.64
5.80
5.81
5.59
5.15
4.54
3.88
3.34
2.91
20
-13
-32
-51
-70
-90
-112
-135
-157
-178
163
147
132
0.003
0.006
0.008
0.009
0.012
0.015
0.017
0.019
0.021
0.024
0.026
0.031
0.033
69.0
54.0
54.0
61.0
60.0
64.0
64.0
64.0
61.0
59.0
57.0
58.0
56.0
0.30
0.27
0.27
0.26
0.23
0.19
0.15
0.14
0.19
0.27
0.33
0.38
0.40
-12
-17
-24
-30
-35
-36
-25
4
24
28
28
25
23
Application circuit for CGY52, f = 100 ... 1800 MHz
V
D
1nF
V
G
C = 1nF *
40 nH
*
L = 100 nH
Input
100pF
10Ω
2
3
7
100 nH
100pF
Output
CGY52
50Ohm
50Ohm
5
50 Ohm Microstripline
*) L, C are optional, only needed when gain control via VG is used
Siemens Aktiengesellschaft
pg. 3/4
12.02.96
HL EH PD 21
CGY 52
GaAs MMIC
________________________________________________________________________________________________________
Total Power Dissipation Ptot = f ( TS; TA )
1.0
P tot [ W ]
0.8
TS
0.6
TA
0.4
0.2
0
0
50
100
150
TA ; TS [ °C ]
Terminal identification:
1
2
3
4
5
6
7
Siemens Aktiengesellschaft
n.c.
Interstage
IN
n.c.
GND (1)
GND (2)
OUT
pg. 4/4
12.02.96
HL EH PD 21