CFY 30 GaAs FET ________________________________________________________________________________________________________ Datasheet * Low noise ( Fmin = 1.4 dB @ 4 GHz ) * High gain ( 11.5 dB typ. @ 4 GHz ) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking CFY 30 A2 Ordering code (tape and reel) Pin Configuration 1 2 3 4 Q62703-F97 S Maximum ratings D S G Package 1) SOT-143 Symbol Value Unit VDS VDG 5 V 7 V -4 ... +0.5 V Drain current VGS ID 80 mA Channel temperature TCh 150 °C Storage temperature range Tstg -40...+150 °C Total power dissipation (TS < 70°C) 2) Ptot 250 mW RthChS <320 K/W Drain-source voltage Drain-gate voltage Gate-source voltage Thermal resistance Channel-soldering point 2) 1) Dimensions see chapter Package Outlines 2) TS is measured on the source 1 lead at the soldering point to the PCB. Siemens Aktiengesellschaft pg. 1/6 11.01.1996 HL EH PD 21 CFY 30 GaAs FET ________________________________________________________________________________________________________ Electrical characteristics at TA = 25°C, unless otherwise specified Characteristics Symbol Drain-source saturation current V = 3.5 V, V =0V DS GS VGS(P) Pinch-off voltage V = 3.5 V I = 1 mA DS D gm Transconductance I = 15 mA V = 3.5 V DS D IG Gate leakage current V = 3.5 V DS I = 15 mA D DS I = 15 mA D f = 4 GHz f = 6 GHz DS I = 15 mA D f = 4 GHz f = 6 GHz DS I = 15 mA D f = 6 GHz V = 3.5 V DS I = 15 mA D f = 4 GHz Power output at 1 dB compression V =4V DS 20 50 80 -0.5 -1.3 -4.0 20 30 - V mS µA - 0.1 2 - 1.4 2.0 1.6 - I = 30 mA D Siemens Aktiengesellschaft dB dB 10 - 11.5 8.9 - - 11.2 - - 14.4 - - 16 - dB MSG Maximum stable gain dB P1 dB f = 6 GHz pg. 2/6 Unit mA MAG Maximum available gain V = 3.5 V max Ga Associated gain V = 3.5 V typ F Noise figure V = 3.5 V IDSS min dBm 11.01.1996 HL EH PD 21 CFY 30 GaAs FET ________________________________________________________________________________________________________ Typical Common Source Noise Parameters ID = 15 mA Z0 = 50 Ω VDS = 3.5 V Γopt f Fmin Ga GHz 2 4 6 8 10 12 dB 1.0 1.4 2.0 2.5 3.0 3.5 dB 15.5 11.5 8.9 7.1 5.8 5.0 MAG 0.72 0.64 0.46 0.31 0.34 0.41 ANG 27 61 101 153 -133 -93 Rn N F50Ω G(F50 Ω) Ω 49 29 19 9 14 28 0.17 0.17 0.30 0.31 0.38 0.42 dB 2.9 2.7 2.8 2.8 3.4 4.1 dB 10.0 9.3 7.5 6.4 4.2 2.9 Total Power Dissipation Ptot = f (TS;TA) 300 P to t [ mW ] 200 TS TA 100 0 0 Siemens Aktiengesellschaft 50 100 pg. 3/6 150 T A ; T S [ °C ] 11.01.1996 HL EH PD 21 CFY 30 GaAs FET ________________________________________________________________________________________________________ Output characteristics ID = f (VDS) 50 VGS =0V ID [mA] 40 VGS=-0.2V VGS=-0.4V 30 VGS=-0.6V 20 VGS =-0.8V VGS =-1.0V 10 V GS =-1.2V VGS =-1.4V 0 0 1 2 3 4 5 VDS [V] Siemens Aktiengesellschaft pg. 4/6 11.01.1996 HL EH PD 21 CFY 30 GaAs FET ________________________________________________________________________________________________________ Typical Common Source S-Parameters ID = 15 mA f GHz S11 Mag Z0 = 50 Ω UD = 3.5 V S21 Ang Mag S12 Ang Mag S22 Ang Mag Ang 0.1 1.00 -1 2.43 178 0.003 87 0.70 -1 0.4 1.00 -6 2.43 171 0.010 23 0.69 -5 0.8 0.99 -14 2.43 162 0.020 78 0.68 -11 1.2 0.98 -21 2.43 154 0.030 72 0.67 -15 1.6 0.97 -28 2.44 145 0.040 66 0.66 -20 2.0 0.96 -36 2.45 137 0.050 60 0.65 -26 2.4 0.93 -44 2.47 129 0.058 55 0.64 -30 2.8 0.90 -53 2.49 120 0.066 50 0.62 -35 3.2 0.87 -62 2.50 111 0.074 45 0.60 -41 3.6 0.83 -72 2.50 102 0.082 39 0.57 -47 4.0 0.80 -82 2.50 93 0.090 32 0.54 -54 4.4 0.77 -92 2.51 83 0.097 25 0.50 -61 4.8 0.74 -104 2.49 73 0.103 18 0.46 -67 5.2 0.70 -115 2.45 64 0.108 12 0.43 -73 5.6 0.66 -127 2.41 54 0.112 6 0.40 -80 6.0 0.63 -139 2.36 45 0.114 0 0.36 -88 6.4 0.60 -150 2.30 37 0.115 -6 0.31 -98 6.8 0.57 -162 2.24 27 0.116 -11 0.27 -110 7.2 0.55 -174 2.19 17 0.116 -17 0.24 -122 7.6 0.54 172 2.14 8 0.116 -22 0.21 -137 8.0 0.53 160 2.08 -2 0.115 -27 0.19 -154 8.4 0.54 147 2.00 -11 0.113 -32 0.18 -173 8.8 0.55 135 1.92 -21 0.111 -37 0.18 171 9.2 0.56 124 1.83 -30 0.109 -42 0.19 155 9.6 0.57 114 1.72 -40 0.107 -46 0.21 141 10.0 0.58 106 1.61 -48 0.104 -50 0.23 128 10.4 0.59 98 1.51 -56 0.102 -53 0.26 118 10.8 0.60 91 1.42 -62 0.101 -56 0.29 108 11.2 0.61 85 1.35 -69 0.099 -58 0.32 100 11.6 0.62 79 1.30 -75 0.098 -60 0.34 93 12.0 0.62 74 1.25 -81 0.096 -63 0.36 85 Siemens Aktiengesellschaft pg. 5/6 11.01.1996 HL EH PD 21 CFY 30 GaAs FET ________________________________________________________________________________________________________ Typical Common Source S-Parameters ID = 30 mA f S11 Z0 = 50 Ω UD = 3.5 V S21 S12 S22 GHz Mag Ang Mag Ang Mag Ang Mag Ang 0.1 1.00 -2 3.23 178 0.002 85 0.71 -1 0.4 1.00 -8 3.21 171 0.009 79 0.70 -6 0.8 0.99 -16 3.19 162 0.017 73 0.69 -11 1.2 0.97 -24 3.18 153 0.025 70 0.67 -16 1.6 0.95 -32 3.17 143 0.034 65 0.66 -21 2.0 0.92 -40 3.17 135 0.042 61 0.65 -26 2.4 0.90 -48 3.17 127 0.051 56 0.63 -31 2.8 0.87 -58 3.17 119 0.059 50 0.61 -36 3.2 0.83 -68 3.16 109 0.067 45 0.58 -42 3.6 0.79 -79 3.12 99 0.073 40 0.55 -48 4.0 0.75 -91 3.08 88 0.079 34 0.52 -54 4.4 0.71 -102 3.04 78 0.084 28 0.50 -60 4.8 0.67 -114 3.00 68 0.089 21 0.47 -66 5.2 0.63 -126 2.95 58 0.092 15 0.43 -73 5.6 0.60 -138 2.87 49 0.094 10 0.38 -81 6.0 0.57 -150 2.77 40 0.096 4 0.34 -89 6.4 0.54 -162 2.68 31 0.097 -1 0.30 -99 6.8 0.52 -174 2.58 22 0.098 -6 0.27 -109 7.2 0.51 173 2.50 14 0.099 -11 0.24 -121 7.6 0.50 160 2.43 5 0.099 -16 0.21 -134 8.0 0.50 147 2.36 -4 0.099 -20 0.18 -148 8.4 0.51 135 2.26 -13 0.099 -24 0.16 -164 8.8 0.52 125 2.15 -22 0.099 -29 0.16 176 9.2 0.54 115 2.04 -30 0.099 -33 0.17 158 9.6 0.55 107 1.93 -39 0.099 -37 0.19 142 10.0 0.57 99 1.82 -47 0.099 -41 0.22 128 10.4 0.59 91 1.71 -54 0.100 -44 0.25 118 10.8 0.60 85 1.60 -62 0.101 -47 0.27 109 11.2 0.61 79 1.51 -69 0.102 -49 0.30 100 11.6 0.62 73 1.44 -75 0.103 -52 0.32 92 12.0 0.62 68 1.38 -82 0.104 -55 0.34 85 Siemens Aktiengesellschaft pg. 6/6 11.01.1996 HL EH PD 21