IRF IRG4BC20K-SPBF

95167
IRG4BC20K-SPbF
Short Circuit Rated
UltraFast IGBT
Features
• High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
• Lead-Free
Benefits
C
VCES = 600V
VCE(on) typ. = 2.27V
G
@VGE = 15V, IC = 9.0A
E
n-channel
• As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBTs offer highest power
density motor controls possible
• This part replaces the IRGBC20K-S and
IRGBC20M-S devices
D 2 Pak
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
16
9.0
32
32
10
±20
29
60
24
-55 to +150
V
A
µs
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RqJC
RqCS
RqJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)†
Weight
Typ.
Max.
–––
0.5
–––
1.44
2.1
–––
40
–––
Units
°C/W
g
1
04/22/04
IRG4BC20K-SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
DV(BR)CES/DTJ
VCE(ON)
VGE(th)
DVGE(th)/DTJ
gfe
ICES
IGES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600
—
—
V
VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage „ 18
—
—
V
VGE = 0V, IC = 1.0A
Temperature Coeff. of Breakdown Voltage — 0.49 —
V/°C VGE = 0V, IC = 1.0mA
— 2.00 —
IC = 6.0A
VGE = 15V
— 2.27 2.8
IC = 9.0A
Collector-to-Emitter Saturation Voltage
V
— 3.01 —
IC = 16A
See Fig.2, 5
— 2.43 —
IC = 9.0A , TJ = 150°C
Gate Threshold Voltage
3.0
—
6.0
VCE = VGE, IC = 250µA
Temperature Coeff. of Threshold Voltage
—
-10
— mV/°C VCE = VGE, IC = 250µA
Forward Transconductance …
2.9 4.3
—
S
VCE = 100 V, IC = 9.0A
—
—
250
VGE = 0V, VCE = 600V
Zero Gate Voltage Collector Current
—
—
2.0
µA VGE = 0V, VCE = 10V, TJ = 25°C
—
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current
—
— ±100
nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
t d(on)
tr
td(off)
tf
Eon
Eoff
Ets
t sc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
t d(on)
tr
td(off)
tf
E ts
Eon
E off
E ts
LE
Cies
Coes
Cres
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
34
51
IC = 9.0A
4.9 7.4
nC
VCC = 400V
See Fig.8
14
21
VGE = 15V
28
—
27
—
TJ = 25°C
ns
150 220
IC = 9.0A, VCC = 480V
100 150
VGE = 15V, RG = 50W
0.15 —
Energy losses include "tail"
0.25 —
mJ See Fig. 9,10,14
0.40 0.6
—
—
µs
VCC = 400V, TJ = 125°C
VGE = 15V, RG = 50W , VCPK < 500V
28
—
TJ = 150°C,
29
—
IC = 9.0A, VCC = 480V
ns
190 —
VGE = 15V, RG = 50W
190 —
Energy losses include "tail"
0.68 —
mJ See Fig. 11,14
0.07 —
TJ = 25°C, VGE = 15V, RG = 50W
0.13 —
mJ IC = 6.0A, VCC = 480V
0.20 —
Energy losses include "tail"
7.5
—
nH
Measured 5mm from package
450 —
VGE = 0V
61
—
pF
VCC = 30V
See Fig. 7
14
—
ƒ = 1.0MHz
Details of note  through † are on the last page
2
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IRG4BC20K-SPbF
5.0
For both:
Triangular wave:
Duty cycle: 50%
T J = 125°C
55°C
T sink = 90°C
Gate drive as specified
4.0
Load Current ( A )
Power Dissipation = 1.8W
Clamp voltage:
80% of rated
3.0
Square wave:
60% of rated
voltage
2.0
1.0
Ideal diodes
A
0.0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 o C
TJ = 150 o C
10
1
V GE = 15V
20µs PULSE WIDTH
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C, Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
100
10
TJ = 150 o C
TJ = 25 oC
1
V CC = 50V
5µs PULSE WIDTH
5
10
15
20
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC20K-SPbF
5.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
20
15
10
5
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
VGE = 15V
80 us PULSE WIDTH
IC = 18 A
4.0
3.0
IC = 9.0A
9A
IC = 4.5 A
2.0
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
PDM
0.05
0.1
0.01
0.00001
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC20K-SPbF
20
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
800
600
Cies
400
200
Coes
VCC = 400V
I C = 9.0A
16
12
8
4
Cres
0
1
10
0
100
VCE , Collector-to-Emitter Voltage (V)
Total Switching Losses (mJ)
Total Switching Losses (mJ)
10
V CC = 480V
V GE = 15V
TJ = 25 ° C
9.0A
I C = 9A
0.3
0
10
20
30
40
, GateResistance
Resistance (Ohm)
( W)
RGRG, Gate
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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20
30
40
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.4
0.2
10
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.5
0
50
50W
RG = Ohm
VGE = 15V
VCC = 480V
IC = 18 A
1
IC = 9.0A
9A
IC = 4.5 A
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC20K-SPbF
RG
TJ
VCC
4.0 VGE
100
= Ohm
50W
= 150° C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
5.0
3.0
2.0
1.0
0.0
0
8
16
24
32
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
40
VGE = 20V
T J = 125 oC
10
1
SAFE OPERATING AREA
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4BC20K-SPbF
L
D.U.T.
VC *
50V
RL =
0 - 480V
1000V
c
480V
4 X I C@25°C
480µF
960V
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
Driver*
D.U.T.
VC
Test Circuit
50V
1000V
c
Fig. 14a - Switching Loss
d
e
* Driver same type
as D.U.T., VC = 480V
c
d
90%
e
VC
10%
90%
Fig. 14b - Switching Loss
t d(off)
10%
I C 5%
Waveforms
tf
tr
t d(on)
t=5µs
E on
E off
E ts = (Eon +Eoff )
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7
IRG4BC20K-SPbF
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50W ,
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
„ Pulse width £ 80µs; duty factor £ 0.1%.
… Pulse width 5.0µs, single shot.
† When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer
to application note #AN-994.
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS A N IR F 5 3 0 S W IT H
L OT COD E 8024
AS S E M B L E D ON W W 02 , 2 00 0
IN T H E A S S E M B L Y L IN E "L "
I N T E R N A T IO N A L
R E C T IF IE R
L OGO
N o te : "P " in a s s e m b ly l in e
p o s i tio n in d ic a te s " L e ad - F r e e "
P AR T N U M B E R
F 530S
AS S E M B L Y
L O T CO D E
D AT E C O D E
YE AR 0 = 2 00 0
W E E K 02
L IN E L
OR
IN T E R N AT IO N AL
R E C T IF IE R
L OGO
AS S E M B L Y
LO T CO D E
8
P AR T N U M B E R
F 530S
D AT E CO D E
P = D E S IG N AT E S L E AD -F R E E
P R O D U C T (O P T IO N A L )
YE AR 0 = 2000
W E E K 02
A = A S S E M B L Y S IT E C O D E
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IRG4BC20K-SPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
3
4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/04
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9