IRF IRG4RC20F

PD - 91731A
IRG4RC20F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Fast: Optimized for medium operating
frequencies (1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation IGBTs.
• Industry standard TO-252AA package
• Combines very low VCE(on) with low switching
losses
VCES = 600V
VCE(on) typ. = 1.82V
G
@VGE = 15V, IC = 12A
E
N-channel
Benefits
• Generation 4 IGBTs offer highest efficiency
• Optimized for specific application conditions
• High power density and current rating
D-Pak
TO-252AA
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
600
22
12
44
44
± 20
5.0
66
26
-55 to + 150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
Wt
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Weight
Typ.
Max.
–––
–––
0.3 (0.01)
1.9
50
–––
Units
°C/W
g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
2/22/01
IRG4RC20F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600
—
Emitter-to-Collector Breakdown Voltage „ 18
—
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —
0.72
— 1.82
VCE(ON)
Collector-to-Emitter Saturation Voltage
— 2.42
— 2.04
VGE(th)
Gate Threshold Voltage
3.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
—
-11
gfe
Forward Transconductance …
5.2 7.75
—
—
ICES
Zero Gate Voltage Collector Current
—
—
—
—
IGES
Gate-to-Emitter Leakage Current
—
—
V(BR)CES
V(BR)ECS
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
—
V
VGE = 0V, IC = 1.0A
—
V/°C VGE = 0V, IC = 1.0mA
2.1
IC = 12A
VGE = 15V
—
IC = 22A
See Fig.2, 5
V
—
IC = 12A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 250µA
—
S
VCE = 100V, IC = 12A
250
VGE = 0V, VCE = 600V
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 600V, TJ = 150°C
±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
27
40
IC = 12A
4.8 6.8
nC VCC = 400V
See Fig. 8
11.4 17
VGE = 15V
26
—
24
—
TJ = 25°C
ns
194 290
IC = 12A, VCC = 480V
226 340
VGE = 15V, RG = 50Ω
0.19 —
Energy losses include "tail"
0.92 —
mJ See Fig. 9, 10, 14
1.11 1.4
25
—
TJ = 150°C,
26
—
IC = 12A, VCC = 480V
ns
263 —
VGE = 15V, RG = 50Ω
443 —
Energy losses include "tail"
1.89 —
mJ See Fig. 11, 14
7.5
—
nH Measured 5mm from package
540 —
VGE = 0V
37
—
pF
VCC = 30V
See Fig. 7
7.0
—
ƒ = 1.0MHz
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω,
(See fig. 13a)
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
… Pulse width 5.0µs, single shot.
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
www.irf.com
IRG4RC20F
30
Load C urren t (A )
For both:
Triangular wave:
Duty cycle: 50%
T J = 125°C
T sink = 90°C
Gate drive as specified
Power Dissipation = 15W
Clamp voltage:
80% of rated
20
Square wave:
60% of rated
voltage
10
Ideal diodes
A
0
0.1
1
10
100
f, F requency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I RMS of fundamental)
TJ = 25°C
TJ = 150°C
10
VGE = 15V
20µs PULSE WIDTH A
I
1
1
2
V
CE
3
4
, Collector-to-Em itter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
5
I C , Collector-to-Emitter Current (A)
100
C,
Collector-to-Emitter Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
V CC = 50V
5µs PULSE WIDTH
1
6
8
10
12
14
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4RC20F
3.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
25
20
15
10
5
0
25
50
75
100
125
150
VGE = 15V
80 us PULSE WIDTH
IC = 18 A
2.0
IC =
9A
IC = 4.5 A
1.0
-60 -40 -20
TC , Case Temperature ( °C)
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.01
0.00001
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRG4RC20F
1000
600
VGE , Gate-to-Emitter Voltage (V)
800
C, Capacitance (pF)
20
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
400
200
Coes
VCC = 400V
I C = 12A
15
10
5
Cres
0
1
10
0
100
0
VCE , Collector-to-Emitter Voltage (V)
10
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC = 480V
V GE = 15V
TJ = 25 ° C
0.71 I C = 9.0A
0.70
0.68
0.67
0.66
20
30
40
RG , Gate Resistance (Ohm)
(Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
15
20
25
30
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.72
10
10
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0
5
50
50Ω
RG = 50Ohm
VGE = 15V
VCC = 480V
IC = 24 A
IC = 12 A
IC =
1
0.1
-60 -40 -20
0
20
40
60
6A
80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4RC20F
RG
TJ
VCC
4.0 VGE
100
= 50
50Ohm
Ω
= 150 ° C
= 480V
= 15V
I C , Collector Current (A)
Total Switching Losses (mJ)
5.0
3.0
2.0
VGE = 20V
T J = 125 o C
10
1.0
1
0.0
5
10
15
20
25
SAFE OPERATING AREA
1
10
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
L
1000
Fig. 12 - Turn-Off SOA
D .U .T.
VC *
50V
100
VCE , Collector-to-Emitter Voltage (V)
I C , Collector Current (A)
RL =
0 - 480V
1 00 0V
480V
4 X IC@25°C
480µF
960V

‚
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V

‚
6
ƒ
www.irf.com
IRG4RC20F

‚
90 %
10 %
ƒ
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
1 0%
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
Eon
E o ff
E ts = (E o n +E o ff )
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2 .3 8 (.09 4)
2 .1 9 (.08 6)
6.73 (.2 65)
6.35 (.2 50)
-A1.2 7 (.050 )
0.8 8 (.035 )
5.46 (.2 15 )
5.21 (.2 05 )
1.14 (.0 45)
0.89 (.0 35)
0.5 8 (.02 3)
0.4 6 (.01 8)
4
6.45 (.2 45 )
5.68 (.2 24 )
6.2 2 (.245 )
5.9 7 (.235 )
1.02 (.0 40)
1.64 (.0 25)
1
2
1 0.42 (.4 10 )
9 .4 0 (.37 0)
0.51 (.0 20 )
M IN.
-B1.5 2 (.0 60 )
1.1 5 (.0 45 )
3X
1 .1 4 (.04 5)
2 X 0 .7 6 (.03 0)
0.8 9 (.035 )
0.6 4 (.025 )
0 .25 (.01 0)
2 .28 (.09 0)
4.5 7 (.1 80 )
www.irf.com
LEAD ASSIGNMENTS
3
M A M B
LE AD A1SS
IG N M E NTS
- GATE
1 -2 G
ATE
- COLLECTOR
2 - D RA IN
3 - EMITTER
3 - SO U R C E
4 - COLLECTOR
4 - D RA IN
0 .58 (.0 23)
0 .46 (.0 18)
N O TE S:
1 D IM EN S IO N IN G & TO LE R AN C IN G PE R A N SI Y 14 .5M , 1 982 .
2 C O N TR O LLING D IM EN S IO N : INC H .
3 C O N FO R M S TO JED E C O U TLIN E TO -25 2A A.
4 D IM EN S IO N S S H O W N AR E B EF O RE SO L D ER D IP,
SO L D ER D IP M AX. +0 .16 (.00 6).
7
IRG4RC20F
D-Pak (TO-252AA) Tape & Reel Information
TR
TRR
1 6.3 ( .641 )
1 5.7 ( .619 )
12 .1 ( .4 76 )
11 .9 ( .4 69 )
F E E D D IR E C T IO N
TR L
16.3 ( .64 1 )
15.7 ( .61 9 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
F E E D D IR E C T IO N
NO T ES :
1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R .
2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ).
3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1.
13 IN C H
16 m m
NOTES :
1. O U T LIN E C O N F O R M S T O E IA -481 .
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 2/01
8
www.irf.com