IRF IRG4BC30KPBF

PD - 95785
IRG4BC30K-SPbF
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
• Lead-Free
C
VCES = 600V
VCE(on) typ. = 2.21V
G
@VGE = 15V, IC = 16A
E
n-channel
Benefits
• As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBTs offer highest power
density motor controls possible
• This part replaces the IRGBC30K-S and
IRGBC30M-S devices
D 2 Pak
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
28
16
58
58
10
±20
260
100
42
-55 to +150
V
A
µs
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)†
Weight
Typ.
Max.
–––
0.5
–––
1.44
1.2
–––
40
–––
Units
°C/W
g
1
8/27/04
IRG4BC30K-SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600 —
Emitter-to-Collector Breakdown Voltage „ 18
—
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —
0.54
— 2.21
— 2.21
VCE(ON)
Collector-to-Emitter Saturation Voltage
— 2.88
— 2.36
VGE(th)
Gate Threshold Voltage
3.0
—
∆V GE(th)/∆TJ Temperature Coeff. of Threshold Voltage
—
-12
gfe
Forward Transconductance …
5.4
8.1
—
—
ICES
Zero Gate Voltage Collector Current
—
—
—
—
IGES
Gate-to-Emitter Leakage Current
—
—
V(BR)CES
V(BR)ECS
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
—
V
VGE = 0V, IC = 1.0A
—
V/°C VGE = 0V, IC = 1.0mA
—
IC = 14A
VGE = 15V
2.7
IC = 16A
V
—
IC = 28A
See Fig.2, 5
—
IC = 16A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 250µA
—
S
VCE = 100V, IC = 16A
250
VGE = 0V, VCE = 600V
2.0
µA VGE = 0V, VCE = 10V, TJ = 25°C
1100
VGE = 0V, VCE = 600V, TJ = 150°C
±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
Eon
Eoff
Ets
LE
Cies
Coes
Cres
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
10
Typ.
67
11
25
26
28
130
120
0.36
0.51
0.87
—
—
—
—
—
—
—
—
—
—
—
—
—
25
29
190
190
1.2
0.26
0.36
0.62
7.5
920
110
27
Max. Units
Conditions
100
IC = 16A
16
nC
VCC = 400V
See Fig.8
37
VGE = 15V
—
—
TJ = 25°C
ns
200
IC = 16A, VCC = 480V
170
VGE = 15V, RG = 23Ω
—
Energy losses include "tail"
—
mJ
See Fig. 9,10,14
1.3
—
µs
VCC = 400V, TJ = 125°C
VGE = 15V, RG = 23Ω , VCPK < 500V
—
TJ = 150°C,
—
IC = 16A, VCC = 480V
ns
—
VGE = 15V, RG = 23Ω
—
Energy losses include "tail"
—
mJ
See Fig. 11,14
—
TJ = 25°C, VGE = 15V, RG = 23Ω
—
mJ
IC = 14A, VCC = 480V
—
Energy losses include "tail"
—
nH
Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
Details of note  through † are on the last page
2
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IRG4BC30K-SPbF
6.0
For both:
5.0
Load Current ( A )
Triangular wave:
Duty cycle: 50%
TJ = 125°C
55°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 1.8W
Clamp voltage:
80% of rated
4.0
Square wave:
3.0
60% of rated
voltage
2.0
1.0
Ideal diodes
A
0.0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 o C
TJ = 150 o C
10
1
V GE = 15V
20µs PULSE WIDTH
0.1
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C, Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
100
TJ = 150 oC
10
TJ = 25 oC
1
V CC = 50V
5µs PULSE WIDTH
0.1
5
10
15
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC30K-SPbF
4.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
30
25
20
15
10
5
0
25
50
75
100
125
150
VGE = 15V
80 us PULSE WIDTH
IC = 32 A
3.0
IC = 16 A
IC = 8.0A
8A
2.0
1.0
-60 -40 -20
TC , Case Temperature ( ° C)
0
20
40
60
80 100 120 140 160
JunctionTemperature
Temperature
( °C)
TTJJ, ,Junction
( °C
)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
0.01
0.00001
0.05
0.02
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC30K-SPbF
1500
VGE , Gate-to-Emitter Voltage (V)
1200
C, Capacitance (pF)
20
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
900
600
Coes
300
VCC = 400V
I C = 16A
16
12
8
4
Cres
0
1
10
0
100
0
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
10
V CC = 480V
V GE = 15V
TJ = 25 ° C
I C = 16A
1.0
0.5
0
10
20
30
40
RG , Gate Resistance (Ohm)
Ω
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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40
60
80
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
1.5
20
QG , Total Gate Charge (nC)
50
RG = Ohm
23Ω
VGE = 15V
VCC = 480V
IC = 32 A
IC = 16 A
1
IC = 8.0A
8A
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC30K-SPbF
RG
TJ
VCC
3.2 VGE
100
Ω
= 23
Ohm
= 150° C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
4.0
2.4
1.6
0.8
VGE = 20V
T J = 125 oC
10
SAFE OPERATING AREA
1
0.0
0
8
16
24
32
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
40
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4BC30K-SPbF
L
D.U.T.
RL =
VC *
50V
0 - 480V
1000V
480V
4 X I C@25°C
480µF
960V
c
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
Driver*
D.U.T.
Fig. 14a - Switching Loss
Test Circuit
VC
50V
1000V
c
d
e
* Driver same type
as D.U.T., VC = 480V
c
d
90%
e
VC
10%
90%
Fig. 14b - Switching Loss
t d(off)
10%
I C 5%
Waveforms
tf
tr
t d(on)
t=5µs
E on
E off
E ts = (Eon +Eoff )
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7
IRG4BC30K-SPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IR F530S WITH
LOT CODE 8024
AS S EMBLED ON WW 02, 2000
IN THE AS S EMBLY L INE "L"
INT ER NAT IONAL
RECT IFIE R
LOGO
Note: "P" in ass embly line
pos ition indicates "Lead-Free"
PART NUMBER
F530S
AS S E MBLY
LOT CODE
DAT E CODE
YEAR 0 = 2000
WE EK 02
LINE L
OR
INT E RNAT IONAL
RE CT IF IE R
LOGO
AS SE MB LY
LOT CODE
8
PART NUMBE R
F 530S
DAT E CODE
P = DE S IGNAT E S LE AD-F RE E
PRODUCT (OPT IONAL)
YE AR 0 = 2000
WE E K 02
A = AS S EMBLY S IT E CODE
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IRG4BC30K-SPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω,
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
… Pulse width 5.0µs, single shot.
† When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer
to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/04
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9