BUK7Y18-55B N-channel TrenchMOS standard level FET Rev. 03 — 18 February 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V and 24 V loads Engine management Advanced braking systems (ABS) General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 55 V ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1 and 3 - - 47.4 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 85 W ID = 20 A; VDS = 44 V; VGS = 10 V; see Figure 15 - 8.1 - nC VGS = 10 V; ID = 20 A; Tj = 25 °C; see Figure 12 and 13 - 12.7 18 mΩ ID = 47.4 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped - - 77 mJ Dynamic characteristics QGD gate-drain charge Static characteristics RDSon drain-source on-state resistance Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain Graphic symbol D mb G S mbb076 1 2 3 4 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7Y18-55B LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 55 V VDGR drain-gate voltage RGS = 20 kΩ - 55 V VGS gate-source voltage ID drain current -20 20 V Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3 - 47.4 A Tmb = 100 °C; VGS = 10 V; see Figure 1 - 33.5 A - 189 A IDM peak drain current Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 85 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Source-drain diode IS source current Tmb = 25 °C - 47.4 A ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C - 189 A - 77 mJ - - J Avalanche ruggedness EDS(AL)S non-repetitive drain-source ID = 47.4 A; Vsup ≤ 55 V; RGS = 50 Ω; avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped EDS(AL)R repetitive drain-source avalanche energy see Figure 4 [1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [2] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [3] Refer to application note AN10273 for further information. BUK7Y18-55B_3 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 February 2010 [1][2][3] © NXP B.V. 2010. All rights reserved. 2 of 14 BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 003aac513 50 ID (A) 40 03na19 120 Pder (%) 80 30 20 40 10 0 0 0 Fig 1. 50 100 150 Tmb (°C) 200 0 50 100 150 200 Tmb (°C) Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aac613 103 I D (A) Limit RDSon = V DS / ID 102 tp = 10 μs 100 μs 10 1 ms DC 1 10 ms 100 ms 10-1 10-2 1 Fig 3. 10 102 VDS (V) 103 Safe operating area; continuous and peak drain currents as a function of drain-source voltage. BUK7Y18-55B_3 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 February 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 003aac492 102 IAL (A) (1) 10 (2) 1 (3) 10-1 10-3 Fig 4. 10-2 10-1 1 tAL (ms) 10 Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time BUK7Y18-55B_3 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 February 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 5 - - 1.76 K/W 003aac482 10 Zth (j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10-1 0.05 δ= P 0.02 Fig 5. t tp single shot 10-2 10-6 tp T T 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration. BUK7Y18-55B_3 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 February 2010 © NXP B.V. 2010. All rights reserved. 5 of 14 BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Symbol Characteristics Parameter Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V; Tj = 25 °C 55 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 50 - - V ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10 and 11 2 3 4 V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 - - 4.4 V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage IDSS drain leakage current IGSS gate leakage current RDSon drain-source on-state resistance ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10 1 - - V VDS = 55 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA VDS = 55 V; VGS = 0 V; Tj = 175 °C - - 500 µA VDS = 0 V; VGS = 20 V; Tj = 25 °C - 2 100 nA VDS = 0 V; VGS = -20 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 20 A; Tj = 175 °C; see Figure 12 - - 37.8 mΩ VGS = 10 V; ID = 20 A; Tj = 25 °C; see Figure 12 and 13 - 12.7 18 mΩ ID = 20 A; VDS = 44 V; VGS = 10 V; see Figure 15 - 21.9 - nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge - 4.64 - nC QGD gate-drain charge - 8.1 - nC Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 16 VDS = 30 V; RL = 1.5 Ω; VGS = 10 V; RG(ext) = 10 Ω - 947 1263 pF - 223 268 pF - 105 144 pF - 13 - ns - 20 - ns td(on) turn-on delay time tr rise time td(off) turn-off delay time - 34 - ns tf fall time - 16 - ns Source-drain diode VSD source-drain voltage IS = 20 A; VGS = 25 V; Tj = 25 °C; see Figure 14 - 0.85 1.2 V trr reverse recovery time - 36 - ns Qr recovered charge IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 30 V - 55 - nC BUK7Y18-55B_3 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 February 2010 © NXP B.V. 2010. All rights reserved. 6 of 14 BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 003aac945 160 ID (A) 20 5 RDSon (mΩ) 15 120 003aac949 80 5.5 6 6.5 7 8 10 4.5 15 60 10 8 7 80 40 6.5 6 5.5 40 VGS (V) = 20 20 5 VGS (V) = 4.5 0 0 0 Fig 6. 2 4 6 8 10 VDS (V) Output characteristics: drain current as a function of drain-source voltage; typical values. 0 Fig 7. 003aac950 40 40 80 120 ID (A) 160 Drain-source on-state resistance as a function of drain current; typical values. 003aac946 60 ID (A) gfs (S) 30 40 20 20 Tj = 175 °C Tj = 25 °C 10 0 0 Fig 8. 10 20 ID (A) 30 Forward transconductance as a function of drain current; typical values. BUK7Y18-55B_3 Objective data sheet 0 Fig 9. 2 4 VGS (V) 6 Transfer characteristics: drain current as a function of gate-source voltage; typical values. All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 February 2010 © NXP B.V. 2010. All rights reserved. 7 of 14 BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 03aa32 5 ID (A) VGS(th) (V) 4 typ max 10−3 typ 2 min 10−2 max 3 10−4 min 10−5 1 0 −60 03aa35 10−1 10−6 0 60 120 0 180 2 4 Tj (°C) Fig 10. Gate-source threshold voltage as a function of junction temperature 03nb25 2.4 6 VGS (V) Fig 11. Sub-threshold drain current as a function of gate-source voltage 003aac948 60 RDSON (mΩ) a 1.6 40 0.8 20 0 −60 0 0 60 120 180 Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature BUK7Y18-55B_3 Objective data sheet 0 4 Tj (°C) 8 12 16 VGS (V) 20 Fig 13. Drain-source on-state resistance as a function of gate-source voltage; typical values. All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 February 2010 © NXP B.V. 2010. All rights reserved. 8 of 14 BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 003aac947 100 003aac944 10 VGS (V) IS (A) 80 8 VDS = 14 V 60 6 40 4 VDS = 44 V Tj = 175 °C 20 2 Tj = 25 °C 0 0.2 0 0.4 0.6 0.8 1 VSD (V) 1.2 0 Fig 14. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. 10 20 QG (nC) 30 Fig 15. Gate-source voltage as a function of gate charge; typical values. 003aac951 104 C (pF) 103 Ciss Coss 2 10 Crss 10 10-1 1 10 VDS (V) 102 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. BUK7Y18-55B_3 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 February 2010 © NXP B.V. 2010. All rights reserved. 9 of 14 BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended surface-mounted package (LFPAK); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b 1/2 X c e A (A 3) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 mm b3 b4 2.2 2.0 0.9 0.7 c D (1) c2 D1(1) E(1) E1(1) max 0.25 0.30 4.10 4.20 0.19 0.24 3.80 5.0 4.8 3.3 3.1 e H L L1 L2 w y θ 1.27 6.2 5.8 0.85 0.40 1.3 0.8 1.3 0.8 0.25 0.1 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-10-13 06-03-16 MO-235 Fig 17. Package outline SOT669 (LFPAK) BUK7Y18-55B_3 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 February 2010 © NXP B.V. 2010. All rights reserved. 10 of 14 BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK7Y18-55B_3 20100218 Objective data sheet - BUK7Y18-55B_2 Modifications: • Various changes to content. BUK7Y18-55B_2 20090731 Objective data sheet - BUK7Y18-55B_1 BUK7Y18-55B_1 20081215 Objective data sheet - - BUK7Y18-55B_3 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 February 2010 © NXP B.V. 2010. All rights reserved. 11 of 14 BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 9.3 Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. BUK7Y18-55B_3 Objective data sheet Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 February 2010 © NXP B.V. 2010. All rights reserved. 12 of 14 BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products — Unless the data sheet of an NXP Semiconductors product expressly states that the product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BUK7Y18-55B_3 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 February 2010 © NXP B.V. 2010. All rights reserved. 13 of 14 BUK7Y18-55B NXP Semiconductors N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 18 February 2010 Document identifier: BUK7Y18-55B_3