PSMN063-150D N-channel enhancement mode field-effect transistor Rev. 03 — 31 October 2001 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS1 technology. Product availability: PSMN063-150D in SOT428 (D-PAK). 1.2 Features ■ TrenchMOS™ technology ■ Fast Switching ■ Very low on-state resistance ■ Low thermal resistance 1.3 Applications ■ DC to DC converters ■ Switched mode power supplies 1.4 Quick reference data ■ VDS = 150 V ■ Ptot = 150 W ■ ID = 29 A ■ RDSon ≤ 63 mΩ 2. Pinning information Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb connected to drain (d) Simplified outline Symbol d mb [1] g MBB076 2 1 Top view 3 MBK091 [1] It is not possible to make a connection to pin 2 of the SOT428 package. 1. TrenchMOS™ is a trademark of Koninklijke Philips Electronics N.V. s PSMN063-150D Philips Semiconductors N-channel enhancement mode field-effect transistor 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage (DC) VDGR drain-gate voltage (DC) VGS gate-source voltage (DC) ID drain current (DC) Conditions Tj = 25 to 175 oC Tj = 25 to 175 oC; RGS = 20 kΩ Min Max Unit − 150 V − 150 V − ±20 V Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 − 29 A Tmb = 100 °C; VGS = 10 V; Figure 2 and 3 − 20 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 − 116 A Ptot total power dissipation Tmb = 25 °C; Figure 1 − 150 W Tstg storage temperature −55 +175 °C Tj operating junction temperature −55 +175 °C Source-drain diode IS source (diode forward) current (DC) Tmb = 25 °C − 29 A ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs − 116 A Avalanche ruggedness EAS non-repetitive avalanche energy unclamped inductive load; ID = 26 A; tp = 0.2 ms; VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; starting Tj = 25 °C − 502 mJ IAS non-repetitive avalanche current unclamped inductive load; VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; starting Tj = 25 °C − 29 A © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08594 Product data Rev. 03 — 31 October 2001 2 of 12 PSMN063-150D Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa16 120 03aa24 120 I der Pder (%) (%) 80 80 40 40 0 0 0 0 50 100 150 50 100 200 Tmb ( C) o 150 200 o Tmb ( C) VGS ≥ 10 V P tot P der = ----------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 003aaa148 103 ID (A) RDSon = VDS / ID 102 tp = 10 µs 100 µs 10 1 ms DC 100 ms 10 ms 1 10-1 1 10 102 103 VDS (V) Tmb = 25 °C; IDM is single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08594 Product data Rev. 03 — 31 October 2001 3 of 12 PSMN063-150D Philips Semiconductors N-channel enhancement mode field-effect transistor 4. Thermal characteristics Table 3: Thermal characteristics Symbol Parameter Conditions Value Unit Rth(j-mb) thermal resistance from junction to mounting base Figure 4 1.0 K/W Rth(j-a) thermal resistance from junction to ambient Vertical in still air 50 K/W 4.1 Transient thermal impedance 003aaa149 10 Zth(j-mb) (K/W) 1 δ= 0.5 0.2 10-1 0.1 0.05 t δ= p P 0.02 T single pulse 10-2 t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08594 Product data Rev. 03 — 31 October 2001 4 of 12 PSMN063-150D Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Characteristics Table 4: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 150 − − V Tj = −55 °C 133 − − V Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 drain-source leakage current Tj = 25 °C 2 3 4 V Tj = 175 °C 1 − − V Tj = −55 °C − − 6 V Tj = 25 °C − 0.05 10 µA Tj = 175 °C − − 500 µA − 0.02 100 nA Tj = 25 °C − 60 63 mΩ Tj = 175 °C − − 176 mΩ − 55 − nC − 10 − nC − 20 27 nC − 2390 − pF − 240 − pF − 98 − pF − 14 − ns − 50 − ns VDS = 150 V; VGS = 0 V IGSS gate-source leakage current VGS = ±10 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 15 A; Figure 7 and 8 Dynamic characteristics Qg(tot) total gate charge ID = 30 A; VDS = 120 V; VGS = 10 V; Figure 14 Qgs gate-source charge Qgd gate-drain (Miller) charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr turn-on rise time td(off) turn-off delay time − 48 − ns tf turn-off fall time − 38 − ns VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 VDD = 75 V; RD = 2.7 Ω; VGS = 10 V; RG = 5.6 Ω Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 13 − 0.9 1.2 V trr reverse recovery time 105 − ns recovered charge IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V; VDS = 25 V − Qr − 0.55 − µC © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08594 Product data Rev. 03 — 31 October 2001 5 of 12 PSMN063-150D Philips Semiconductors N-channel enhancement mode field-effect transistor 003aaa150 30 VGS (V) = 10 ID 6.0 003aaa152 30 ID 8.0 (A) (A) 20 20 5.4 Tj = 175 oC 5.2 10 25 oC 10 5.0 4.8 4.6 4.4 0 0 0 0.4 0.8 1.2 0 1.6 2.0 VDS (V) Tj = 25 °C VGS (V) 8 Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 003aaa151 4.4 4.6 4.8 RDSon 6 4 Tj = 25 °C and 175 °C; VDS > ID × RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. 0.20 2 (Ω) 0.16 03aa30 2.8 a 5.0 2.4 2.0 5.2 0.12 5.4 1.6 0.08 6 1.2 0.04 VGS (V) = 8 0.8 10 0 0 5 10 15 20 25 30 0.4 -60 -20 20 60 ID (A) Tj = 25 °C 140 180 T (oC) j R DSon a = ----------------------------R DSon ( 25°C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08594 Product data 100 Rev. 03 — 31 October 2001 6 of 12 PSMN063-150D Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa32 5 VGS(th) 10-1 03aa35 ID (A) (V) max 10-2 typ 10-3 min 10-4 4 3 2 typ min max 10-5 1 0 -60 10-6 0 60 120 180 Tj (ºC) 0 VGS (V) 6 Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. 003aaa153 40 gfs Fig 10. Sub-threshold drain current as a function of gate-source voltage. 003aaa154 104 C (pF) (S) 4 2 Ciss Tj = 25 oC 30 103 Coss Tj = 175 oC 20 Crss 102 10 0 0 10 20 ID (A) 30 Tj = 25 °C; VDS > ID × RDSon 10 10-1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08594 Product data 1 Rev. 03 — 31 October 2001 7 of 12 PSMN063-150D Philips Semiconductors N-channel enhancement mode field-effect transistor 003aaa156 30 003aaa155 12 VGS IS (A) (V) Tj = 175 oC VDD = 30 V 20 8 Tj = 25 oC VDD = 120 V 4 10 0 0 0.4 0.8 1.2 0 0 20 40 VSD (V) Tj = 25 °C and 175 °C; VGS = 0 V ID = 30 A; VDD = 30 V and 120 V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08594 Product data 60 QG (nC) Rev. 03 — 31 October 2001 8 of 12 PSMN063-150D Philips Semiconductors N-channel enhancement mode field-effect transistor 6. Package outline Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428 seating plane y A E A2 A A1 b2 D1 mounting base E1 D HE L2 2 L1 L 1 3 b1 w M A b c e e1 0 10 20 mm scale DIMENSIONS (mm are the original dimensions) A UNIT max. 2.38 2.22 mm A1(1) A2 b b1 max. b2 c 0.65 0.45 0.89 0.71 0.89 0.71 1.1 0.9 5.36 5.26 0.4 0.2 D1 E D max. max. max. E1 min. 6.22 5.98 4.0 6.73 6.47 4.81 4.45 e e1 2.285 4.57 HE max. L L1 min. L2 w y max. 10.4 9.6 2.95 2.55 0.5 0.7 0.5 0.2 0.2 Note 1. Measured from heatsink back to lead. OUTLINE VERSION SOT428 REFERENCES IEC JEDEC EIAJ TO-252 SC-63 EUROPEAN PROJECTION ISSUE DATE 98-04-07 99-09-13 Fig 15. SOT428 (D-PAK). © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08594 Product data Rev. 03 — 31 October 2001 9 of 12 PSMN063-150D Philips Semiconductors N-channel enhancement mode field-effect transistor 7. Revision history Table 5: Revision history Rev Date 03 20011031 CPCN Description - Product data; third version; supersedes second version PSMN063_150D_2 of 1 August 1999. • Max value of Qgd added in table 5. 02 19990801 - Product specification; second version PSMN063_150D_2; supersedes initial Lotus Manuscript version of August 1999 Rev 1.000. 01 - - Initial version; not published. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08594 Product data Rev. 03 — 31 October 2001 10 of 12 PSMN063-150D Philips Semiconductors N-channel enhancement mode field-effect transistor 8. Data sheet status Data sheet status[1] Product status[2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 9. Definitions 10. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08594 Rev. 03 — 31 October 2001 11 of 12 Philips Semiconductors PSMN063-150D N-channel enhancement mode field-effect transistor Contents 1 1.1 1.2 1.3 1.4 2 3 4 4.1 5 6 7 8 9 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2001. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 31 October 2001 Document order number: 9397 750 08594