BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 01 — 14 August 2007 Preliminary data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f VDS PL Gp ηD tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) 3.1 to 3.5 32 120 11 43 20 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 µs with δ of 10 %: u Output power = 120 W u Gain = 11 dB u Efficiency = 43 % n Easy power control n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (3.1 GHz to 3.5 GHz) n Internally matched for ease of use n Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) BLS6G3135-120; BLS6G3135S-120 NXP Semiconductors LDMOS S-Band radar power transistor 1.3 Applications n S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol BLS6G3135-120 (SOT502A) 1 drain 2 gate 3 1 1 3 [1] source 2 2 3 sym112 BLS6G3135S-120 (SOT502B) 1 drain 2 gate 3 1 1 3 [1] source 2 2 3 sym112 [1] Connected to flange 3. Ordering information Table 3. Ordering information Type number BLS6G3135-120 Package Name Description - flanged LDMOST ceramic package; 2 mounting holes; SOT502A 2 leads BLS6G3135S-120 - Version earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage - 60 V VGS gate-source voltage −0.5 +13 V ID drain current - 7.2 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C BLS6G3135-120_6G3135S-120_1 Preliminary data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 14 August 2007 2 of 11 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Zth(j-mb) Conditions transient thermal impedance from junction to mounting base Typ Max Unit Tcase = 85 °C; PL = 120 W tp = 300 µs; δ = 10 % 0.29 0.40 K/W tp = 100 µs; δ = 20 % 0.30 0.41 K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 60 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 180 mA 1.4 1.8 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 27 33 - A IGSS gate leakage current VGS = 8.3 V; VDS = 0 V - - 450 nA gfs forward transconductance VDS = 10 V; ID = 9 A - 13 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 6.3 A - 0.085 0.160 Ω 7. Application information Table 7. Application information Mode of operation: pulsed RF; tp = 300 µs; δ = 10 %; RF performance at VDS = 32 V; IDq = 100 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit. Symbol Parameter PL output power Conditions Min Typ Max Unit - 120 - W VCC supply voltage PL = 120 W - - 32 V Gp power gain PL = 120 W 9.5 11 - dB IRL input return loss PL = 120 W 6 10 - dB PL(1dB) output power at 1 dB gain compression PL = 120 W - 130 - W ηD drain efficiency PL = 120 W 39 43 - % tr rise time PL = 120 W - 20 50 ns tf fall time PL = 120 W - 6 50 ns BLS6G3135-120_6G3135S-120_1 Preliminary data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 14 August 2007 3 of 11 BLS6G3135-120; BLS6G3135S-120 NXP Semiconductors LDMOS S-Band radar power transistor Table 8. Typical impedance f ZS ZL GHz Ω Ω 3.1 2.7 − j5.4 5.9 − j5.9 3.2 3.3 − j4.7 4.5 − j6.2 3.3 4.2 − j4.4 3.5 − j6.0 3.4 5.2 − j4.8 2.7 − j5.6 3.5 5.7 − j6.2 2.0 − j5.2 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.1 Ruggedness in class-AB operation The BLS6G3135-120 and BLS6G3135S-120 are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 100 mA; PL = 120 W; tp = 300 µs; δ = 10 %. 001aag823 13 Gp (dB) 50 ηD (%) ηD 11 Gp 40 001aag824 14 Gp (dB) (2) (1) (3) 10 9 30 7 20 6 10 5 3 3 3.2 0 3.6 3.4 2 0 40 f (GHz) 80 120 160 PL (W) VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %; PL = 120 W. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %. Fig 2. Power gain and drain efficiency as functions of frequency; typical values Fig 3. Power gain as a function of load power; typical values BLS6G3135-120_6G3135S-120_1 Preliminary data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 14 August 2007 4 of 11 BLS6G3135-120; BLS6G3135S-120 NXP Semiconductors LDMOS S-Band radar power transistor 001aag825 50 ηD (%) 001aag826 160 (1) (2) PL (W) (2) (3) 40 (1) 120 (3) 30 80 20 40 10 0 0 0 40 80 120 160 0 5 10 15 PL (W) (1) f = 3.1 GHz. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. (3) f = 3.5 GHz. VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %. VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %. Fig 4. Drain efficiency as a function of load power; typical values 001aag827 13 Gp (dB) 50 ηD (%) ηD 11 Gp 20 Pi (W) 40 Fig 5. Load power as a function of input power; typical values 001aag828 14 Gp (dB) (2) (1) (3) 10 9 30 7 20 6 10 5 3 3 3.2 0 3.6 3.4 2 0 40 f (GHz) 80 120 160 PL (W) VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %; PL = 120 W. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %. Fig 6. Power gain and drain efficiency as functions of frequency; typical values Fig 7. Power gain as a function of load power; typical values BLS6G3135-120_6G3135S-120_1 Preliminary data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 14 August 2007 5 of 11 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 001aag829 50 001aag830 160 (1) ηD (%) PL (W) (2) (2) 40 (3) (1) 120 (3) 30 80 20 40 10 0 0 0 40 80 120 160 0 PL (W) 10 15 20 Pi (W) (1) f = 3.1 GHz. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. (3) f = 3.5 GHz. VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %. Fig 8. Drain efficiency as a function of load power; typical values VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %. Fig 9. Load power as a function of input power; typical values BLS6G3135-120_6G3135S-120_1 Preliminary data sheet 5 © NXP B.V. 2007. All rights reserved. Rev. 01 — 14 August 2007 6 of 11 BLS6G3135-120; BLS6G3135S-120 NXP Semiconductors LDMOS S-Band radar power transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 10. Package outline SOT502A BLS6G3135-120_6G3135S-120_1 Preliminary data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 14 August 2007 7 of 11 BLS6G3135-120; BLS6G3135S-120 NXP Semiconductors LDMOS S-Band radar power transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 11. Package outline SOT502B BLS6G3135-120_6G3135S-120_1 Preliminary data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 14 August 2007 8 of 11 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 9. Abbreviations Table 9. Abbreviations Acronym Description LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Lateral Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency S-Band Short wave Band VSWR Voltage Standing-Wave Ratio 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLS6G3135-120_6G3135S-120_1 20070814 Preliminary data sheet - - BLS6G3135-120_6G3135S-120_1 Preliminary data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 14 August 2007 9 of 11 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BLS6G3135-120_6G3135S-120_1 Preliminary data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 14 August 2007 10 of 11 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 14 August 2007 Document identifier: BLS6G3135-120_6G3135S-120_1