DISCRETE SEMICONDUCTORS DATA SHEET BSN274; BSN274A N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BSN274; BSN274A QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc., due to low threshold voltage SYMBOL • High speed switching • No secondary breakdown DESCRIPTION Silicon n-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers. PARAMETER UNIT VDS drain-source voltage 270 V ID drain current (DC) 250 mA RDS(on) drain-source on-resistance 8 Ω VGS(th) threshold voltage 2 V PINNING (BSN274) PIN DESCRIPTION 1 gate 2 drain 3 source PINNING (BSN274A) PIN DESCRIPTION 1 source 2 gate 3 drain Note: Other pinnings are available on request. PIN CONFIGURATION - TO-92 VARIANT d handbook, halfpage 1 2 3 g MAM146 s Fig.1 Simplified outline and symbol. April 1995 MAX. 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN274; BSN274A LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 270 V ±VGSO gate-source voltage open drain − 20 V ID drain current DC − 250 mA IDM drain current peak − 1 A Ptot total power dissipation up to Tamb = 25 °C (note 1) − 1 W Tstg storage temperature range −65 150 °C Tj operating junction temperature − 150 °C THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER VALUE from junction to ambient (note 1) 125 UNIT K/W Notes 1. Transistor mounted on printed circuit board, maximum lead length 4 mm, mounting pad for drain leads minimum 10 mm × 10 mm. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0 ID = 10 µA 270 − − V IDSS drain-source leakage current VDS = 220 V VGS = 0 − − 1 µA ±IGSS gate-source leakage current ±VGS = 20 V VDS = 0 − − 100 nA VGS(th) gate threshold voltage ID = 1 mA VDS = VGS 0.8 − 2 V RDS(on) drain-source on-resistance ID = 250 mA VGS = 10 V − 6.5 8 Ω RDS(on) drain-source on-resistance ID = 20 mA VGS = 2.4 V − 9 14 Ω Yfs transfer admittance ID = 250 mA VDS = 25 V 200 400 − mS Ciss input capacitance VDS = 25 V VGS = 0 f = 1 MHz − 65 90 pF Coss output capacitance VDS = 25 V VGS = 0 f = 1 MHz − 20 30 pF April 1995 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor SYMBOL Crss PARAMETER feedback capacitance BSN274; BSN274A CONDITIONS MIN. TYP. MAX. UNIT VDS = 25 V VGS = 0 f = 1 MHz − 5 15 pF Switching times (see Figs 2 and 3) ton switching-on time ID = 250 mA VDD = 50 V VGS = 0 to 10 V − 5 10 ns toff switching-off time ID = 250 mA VDD = 50 V VGS = 0 to 10 V − 20 30 ns handbook, halfpage VDD = 50 V handbook, halfpage 90 % INPUT 10 % 90 % 10 V 0V OUTPUT ID 10 % 50 Ω ton MSA631 MBB692 Fig.2 Switching time test circuit. April 1995 toff Fig.3 Input and output waveforms. 4 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN274; BSN274A PACKAGE OUTLINES Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant c L2 E d A L b 1 e1 2 e D 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) max L2 max mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 2.5 Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 variant April 1995 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 5 EUROPEAN PROJECTION ISSUE DATE 97-04-14 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN274; BSN274A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 6 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor NOTES April 1995 7 BSN274; BSN274A Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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