BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor Rev. 04 — 18 February 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features n n n n n Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors 1.3 Applications n General-purpose switching and amplification 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor with negative polarity VCEO collector-emitter voltage IC collector current hFE DC current gain open base VCE = 5 V; IC = 2 mA - - 45 V - - 100 mA 200 - 450 2. Pinning information Table 2. Pinning Pin Description 1 emitter TR1 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1 Simplified outline 6 5 4 Graphic symbol 6 5 4 TR2 TR1 1 2 3 1 2 sym019 3 BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 3. Ordering information Table 3. Ordering information Type number BC847BPN Package Name Description Version SC-88 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 4. Marking codes Type number Marking code[1] BC847BPN 13* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 45 V VEBO emitter-base voltage open collector IC collector current ICM peak collector current IBM Ptot - 5 V - 100 mA single pulse; tp ≤ 1 ms - 200 mA peak base current single pulse; tp ≤ 1 ms - 200 mA total power dissipation Tamb ≤ 25 °C [1] - 220 mW [2] - 250 mW [1] - 300 mW [2] - 400 mW Per device total power dissipation Ptot Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. BC847BPN_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 February 2009 2 of 14 BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 006aab419 500 Ptot (mW) (1) 400 (2) 300 200 100 0 −75 −25 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, standard footprint Fig 1. Per device: Power derating curves SOT363 (SC-88) 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions Min Typ Max Unit [1] - - 568 K/W [2] - - 500 K/W - - 230 K/W [1] - - 416 K/W [2] - - 313 K/W Per transistor Rth(j-a) Rth(j-sp) thermal resistance from junction to ambient in free air thermal resistance from junction to solder point Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. BC847BPN_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 February 2009 3 of 14 BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 006aab420 103 Zth(j-a) (K/W) δ=1 0.75 0.50 0.33 102 0.20 0.10 0.05 0.02 10 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab421 103 Zth(j-a) (K/W) δ=1 0.75 0.50 0.33 102 0.20 0.10 0.05 0.02 10 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BC847BPN_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 February 2009 4 of 14 BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit collector-base cut-off VCB = 30 V; IE = 0 A current VCB = 30 V; IE = 0 A; Tj = 150 °C - - 15 nA - - 5 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA hFE DC current gain VCE = 5 V; IC = 2 mA 200 - 450 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 100 mV - - 300 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - 755 - mV VBE base-emitter voltage IC = 2 mA; VCE = 5 V TR1 (NPN) 580 655 700 mV TR2 (PNP) 600 655 750 mV - - 1.5 pF - - 2.2 pF - 11 - pF Per transistor; for the PNP transistor with negative polarity ICBO Cc IC = 100 mA; IB = 5 mA collector capacitance IE = ie = 0 A; VCB = 10 V; f = 1 MHz TR1 (NPN) TR2 (PNP) Ce emitter capacitance IC = ic = 0 A; VEB = 0.5 V; f = 1 MHz TR1 (NPN) TR2 (PNP) fT [1] transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz - 10 - pF 100 - - MHz Pulse test: tp ≤ 300 µs; δ ≤ 0.02. BC847BPN_4 Product data sheet [1] © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 February 2009 5 of 14 BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor mgt727 600 hFE IB (mA) = 4.0 3.6 3.2 2.8 2.4 2.0 IC (A) (1) 500 006aab422 0.20 0.15 1.6 400 1.2 (2) 0.8 300 0.10 0.4 200 0.05 (3) 100 0 10−1 1 102 10 0 103 0 1 2 3 4 5 VCE (V) I C (mA) Tamb = 25 °C VCE = 5 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 4. TR1 (NPN): DC current gain as a function of collector current; typical values Fig 5. mgt728 1200 VBE (mV) 1000 TR1 (NPN): Collector current as a function of collector-emitter voltage; typical values 006aab423 1.2 VBEsat (V) 1.0 (1) (1) 800 0.8 (2) (2) 600 0.6 (3) (3) 400 0.4 200 0 10−2 10−1 1 10 0.2 10−1 102 103 I C (mA) 1 VCE = 5 V IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C TR1 (NPN): Base-emitter voltage as a function of collector current; typical values Fig 7. 103 TR1 (NPN): Base-emitter saturation voltage as a function of collector current; typical values BC847BPN_4 Product data sheet 102 IC (mA) (1) Tamb = −55 °C Fig 6. 10 © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 February 2009 6 of 14 BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor mgt729 104 VCEsat (mV) 006aab424 109 fT (Hz) 103 108 102 (1) (3) (2) 10 10−1 1 10 102 103 107 10−1 1 102 10 IC (mA) I C (mA) VCE = 5 V; f = 1 MHz; Tamb = 25 °C IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 8. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values Fig 9. TR1 (NPN): Transition frequency as a function of collector current; typical values BC847BPN_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 February 2009 7 of 14 BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 006aab425 600 IB (mA) = −3.5 IC (A) (1) hFE 006aab426 −0.20 −0.15 −3.15 −2.8 −2.45 −2.1 −1.75 −1.4 400 −1.05 −0.7 (2) −0.10 −0.35 200 (3) −0.05 0 −10−1 −1 −10 −102 −103 0 0 −1 −2 −3 IC (mA) VCE = −5 V −4 −5 VCE (V) Tamb = 25 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 10. TR2 (PNP): DC current gain as a function of collector current; typical values mld700 −1200 Fig 11. TR2 (PNP): Collector current as a function of collector-emitter voltage; typical values VBE mV −1200 VBEsat (mV) −1000 −1000 mld702 (1) (1) −800 (2) −800 (2) −600 (3) −600 (3) −400 −200 −10−2 −10−1 −1 −400 −10 −102 −103 IC (mA) VCE = −5 V −200 −10−1 −1 −102 IC (mA) −103 IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C Fig 12. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values Fig 13. TR2 (PNP): Base-emitter saturation voltage as a function of collector current; typical values BC847BPN_4 Product data sheet −10 © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 February 2009 8 of 14 BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor mld701 −104 VCEsat (mV) 006aab427 109 fT (Hz) −103 108 (1) −102 (2) (3) −10 −10−1 −1 −10 −102 IC (mA) −103 107 −10−1 −1 −10 −102 IC (mA) VCE = −5 V; f = 1 MHz; Tamb = 25 °C IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 14. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 15. TR2 (PNP): Transition frequency as a function of collector current; typical values BC847BPN_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 February 2009 9 of 14 BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 8. Package outline 2.2 1.8 6 2.2 1.35 2.0 1.15 1.1 0.8 5 4 2 3 0.45 0.15 pin 1 index 1 0.3 0.2 0.65 0.25 0.10 1.3 Dimensions in mm 06-03-16 Fig 16. Package outline SOT363 (SC-88) 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BC847BPN Package Description SOT363 3000 10000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, see Section 13. [2] T1: normal taping [3] T2: reverse taping BC847BPN_4 Product data sheet Packing quantity © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 February 2009 10 of 14 BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 10. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 17. Reflow soldering footprint SOT363 (SC-88) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 18. Wave soldering footprint SOT363 (SC-88) BC847BPN_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 February 2009 11 of 14 BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BC847BPN_4 20090218 Product data sheet - BC847BPN_3 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • Legal texts have been adapted to the new company name where appropriate. Section 4 “Marking”: updated Section 7 “Characteristics”: enhanced Section 9 “Packing information”: added Section 10 “Soldering”: added Section 12 “Legal information”: updated BC847BPN_3 20011026 Product specification - BC847BPN_2 BC847BPN_2 19990426 Preliminary specification - BC847BPN_1 BC847BPN_1 19970709 Preliminary specification - - BC847BPN_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 February 2009 12 of 14 BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BC847BPN_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 February 2009 13 of 14 BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information. . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 18 February 2009 Document identifier: BC847BPN_4