NX3L1T5157 Low-ohmic single-pole double-throw analog switch Rev. 04 — 24 March 2010 Product data sheet 1. General description The NX3L1T5157 is a low-ohmic single-pole double-throw analog switch suitable for use as an analog or digital 2:1 multiplexer/demultiplexer. It has a digital select input (S), two independent inputs/outputs (Y0 and Y1) and a common input/output (Z). Schmitt trigger action at the digital input makes the circuit tolerant to slower input rise and fall times. Low threshold digital input allows this device to be driven by 1.8 V logic levels in 3.3 V applications without significant increase in supply current ICC. The NX3L1T5157 allows signals with amplitude up to VCC to be transmitted from Z to Y0 or Y1, or from Y0 or Y1 to Z. Its low ON resistance (0.5 Ω) and flatness (0.13 Ω) ensures minimal attenuation and distortion of transmitted signals. 2. Features Wide supply voltage range from 1.4 V to 4.3 V Very low ON resistance (peak): 1.6 Ω (typical) at VCC = 1.4 V 1.0 Ω (typical) at VCC = 1.65 V 0.55 Ω (typical) at VCC = 2.3 V 0.50 Ω (typical) at VCC = 2.7 V 0.50 Ω (typical) at VCC = 4.3 V Break-before-make switching High noise immunity ESD protection: HBM JESD22-A114E Class 3A exceeds 7500 V MM JESD22-A115-A exceeds 200 V CDM AEC-Q100-011 revision B exceeds 1000 V IEC61000-4-2 contact discharge exceeds 8000 V for switch ports CMOS low-power consumption Latch-up performance exceeds 100 mA per JESD 78 Class II Level A 1.8 V control logic at VCC = 3.6 V Control input accepts voltages above supply voltage Very low supply current, even when input is below VCC High current handling capability (350 mA continuous current under 3.3 V supply) Specified from −40 °C to +85 °C and from −40 °C to +125 °C NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 3. Applications Cell phone PDA Portable media player 4. Ordering information Table 1. Ordering information Type number NX3L1T5157GM Package Temperature range Name Description Version −40 °C to +125 °C XSON6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 × 1.45 × 0.5 mm SOT886 5. Marking Table 2. Marking codes[1] Type number Marking code NX3L1T5157GM DI [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 6. Functional diagram Y1 S Y1 Z S Y0 Z Y0 001aac355 001aai752 Fig 1. Logic symbol Fig 2. Logic diagram NX3L1T5157_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 2 of 21 NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 7. Pinning information 7.1 Pinning NX3L1T5157 S 1 6 Y1 VCC 2 5 GND Z 3 4 Y0 001aai753 Transparent top view Fig 3. Pin configuration SOT886 (XSON6) 7.2 Pin description Table 3. Pin description Symbol Pin Description S 1 select input VCC 2 supply voltage Z 3 common input or output Y0 4 independent input or output GND 5 ground (0 V) Y1 6 independent input or output 8. Functional description Table 4. Function table[1] Input S Channel on L Y0 H Y1 [1] H = HIGH voltage level; L = LOW voltage level. NX3L1T5157_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 3 of 21 NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage Conditions Max Unit −0.5 +4.6 V [1] −0.5 +4.6 V [2] −0.5 VCC + 0.5 V VI input voltage VSW switch voltage IIK input clamping current VI < −0.5 V −50 - mA ISK switch clamping current VI < −0.5 V or VI > VCC + 0.5 V - ±50 mA ISW switch current VSW > −0.5 V or VSW < VCC + 0.5 V; source or sink current - ±350 mA VSW > −0.5 V or VSW < VCC + 0.5 V; pulsed at 1 ms duration, < 10 % duty cycle; peak current - ±500 mA −65 +150 °C - 250 mW Tstg select input S Min storage temperature Ptot total power dissipation Tamb = −40 °C to +125 °C [3] [1] The minimum input voltage rating may be exceeded if the input current rating is observed. [2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not exceed 4.6 V. [3] For XSON6 package: above 118 °C the value of Ptot derates linearly with 7.8 mW/K. 10. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter VCC supply voltage VI input voltage VSW switch voltage Tamb ambient temperature Δt/ΔV input transition rise and fall rate Conditions select input S [1] VCC = 1.4 V to 4.3 V [2] Min Max Unit 1.4 4.3 V 0 4.3 V 0 VCC V −40 +125 °C - 200 ns/V [1] To avoid sinking GND current from terminal Z when switch current flows in terminal Yn, the voltage drop across the bidirectional switch must not exceed 0.4 V. If the switch current flows into terminal Z, no GND current will flow from terminal Yn. In this case, there is no limit for the voltage drop across the switch. [2] Applies to control signal levels. NX3L1T5157_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 4 of 21 NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 11. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground 0 V). Symbol Parameter VIH VIL HIGH-level input voltage LOW-level input voltage Max Min VCC = 1.4 V to 1.6 V 0.9 - - 0.9 - - V VCC = 1.65 V to 1.95 V 0.9 - - 0.9 - - V VCC = 2.3 V to 2.7 V 1.1 - - 1.1 - - V VCC = 2.7 V to 3.6 V 1.3 - - 1.3 - - V VCC = 3.6 V to 4.3 V 1.4 - - 1.4 - - V VCC = 1.4 V to 1.6 V - - 0.3 - 0.3 0.3 V VCC = 1.65 V to 1.95 V - - 0.4 - 0.4 0.3 V VCC = 2.3 V to 2.7 V - - 0.4 - 0.4 0.4 V VCC = 2.7 V to 3.6 V - - 0.5 - 0.5 0.5 V VCC = 3.6 V to 4.3 V - - 0.6 - 0.6 0.6 V - - - - ±0.5 ±1 μA VCC = 1.4 V to 3.6 V - - ±5 - ±50 ±500 nA VCC = 3.6 V to 4.3 V - - ±10 - ±50 ±500 nA VCC = 1.4 V to 3.6 V - - ±5 - ±50 ±500 nA VCC = 3.6 V to 4.3 V - - ±10 - ±50 ±500 nA VCC = 3.6 V - - 100 - 690 6000 nA VCC = 4.3 V select input S; VI = GND to 4.3 V; VCC = 1.4 V to 4.3 V IS(OFF) OFF-state leakage current Y0 and Y1 port; see Figure 4 ICC ΔICC Unit Typ input leakage current ON-state leakage current Tamb = −40 °C to +125 °C Min II IS(ON) Tamb = 25 °C Conditions Max Max (85 °C) (125 °C) Z port; see Figure 5 supply current VI = VCC or GND; VSW = GND or VCC - - 150 - 800 7000 nA additional VSW = GND or VCC supply current VI = 2.6 V; VCC = 4.3 V - 2.0 4.0 - 7 7 μA VI = 2.6 V; VCC = 3.6 V - 0.35 0.7 - 1 1 μA VI = 1.8 V; VCC = 4.3 V - 7.0 10.0 - 15 15 μA VI = 1.8 V; VCC = 3.6 V - 2.5 4.0 - 5 5 μA VI = 1.8 V; VCC = 2.5 V - 50 200 - 300 500 nA CI input capacitance - 1.0 - - - - pF CS(OFF) OFF-state capacitance - 35 - - - - pF CS(ON) ON-state capacitance - 130 - - - - pF NX3L1T5157_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 5 of 21 NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 11.1 Test circuits VCC VIL or VIH S Y0 1 Z Y1 2 switch switch S 1 VIH 2 VIL IS VI VO GND 001aac358 VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V. Fig 4. Test circuit for measuring OFF-state leakage current VCC VIL or VIH IS S Y0 1 Z Y1 2 switch S 1 VIH 2 VIL switch VI VO GND 001aac359 VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V. Fig 5. Test circuit for measuring ON-state leakage current 11.2 ON resistance Table 8. ON resistance At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 7 to Figure 13. Symbol RON(peak) Parameter ON resistance (peak) Tamb = −40 °C to +85 °C Tamb = −40 °C to +125 °C Unit Conditions Min Typ[1] Max Min Max VCC = 1.4 V - 1.6 3.7 - 4.1 Ω VCC = 1.65 V - 1.0 1.6 - 1.7 Ω VCC = 2.3 V - 0.55 0.8 - 0.9 Ω VCC = 2.7 V - 0.5 0.75 - 0.9 Ω VCC = 4.3 V - 0.5 0.75 - 0.9 Ω VI = GND to VCC; ISW = 100 mA; see Figure 6 NX3L1T5157_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 6 of 21 NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch Table 8. ON resistance …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 7 to Figure 13. Symbol ΔRON RON(flat) Parameter ON resistance mismatch between channels ON resistance (flatness) Tamb = −40 °C to +85 °C Tamb = −40 °C to +125 °C Unit Conditions Min Typ[1] Max Min Max VCC = 1.4 V - 0.04 0.3 - 0.3 Ω VCC = 1.65 V - 0.04 0.2 - 0.3 Ω VCC = 2.3 V - 0.02 0.08 - 0.1 Ω VCC = 2.7 V - 0.02 0.075 - 0.1 Ω VCC = 4.3 V - 0.02 0.075 - 0.1 Ω VCC = 1.4 V - 1.0 3.3 - 3.6 Ω VCC = 1.65 V - 0.5 1.2 - 1.3 Ω VCC = 2.3 V - 0.15 0.3 - 0.35 Ω VCC = 2.7 V - 0.13 0.3 - 0.35 Ω VCC = 4.3 V - 0.2 0.4 - 0.45 Ω [2] VI = GND to VCC; ISW = 100 mA [3] VI = GND to VCC; ISW = 100 mA [1] Typical values are measured at Tamb = 25 °C. [2] Measured at identical VCC, temperature and input voltage. [3] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and temperature. NX3L1T5157_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 7 of 21 NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 11.3 ON resistance test circuit and graphs 001aag564 1.6 RON (Ω) 1.2 (1) VSW V VCC S VIL or VIH Z Y0 1 switch Y1 2 VI 0.8 switch S 1 VIL 2 VIH (2) (3) (4) 0.4 (5) (6) ISW 0 GND 0 1 2 RON = VSW / ISW. 3 4 5 VI (V) 001aag563 (1) VCC = 1.5 V. (2) VCC = 1.8 V. (3) VCC = 2.5 V. (4) VCC = 2.7 V. (5) VCC = 3.3 V. (6) VCC = 4.3 V. Measured at Tamb = 25 °C. Fig 6. Test circuit for measuring ON resistance Fig 7. Typical ON resistance as a function of input voltage NX3L1T5157_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 8 of 21 NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 001aag565 1.6 001aag566 1.0 RON (Ω) RON (Ω) 0.8 1.2 (1) (2) (3) (4) 0.6 (1) (2) (3) (4) 0.8 0.4 0.4 0.2 0 0 0 1 2 3 0 1 2 VI (V) (1) Tamb = 125 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. (4) Tamb = −40 °C. Fig 8. ON resistance as a function of input voltage; VCC = 1.5 V 001aag567 1.0 3 VI (V) RON (Ω) Fig 9. ON resistance as a function of input voltage; VCC = 1.8 V 001aag568 1.0 RON (Ω) 0.8 0.8 0.6 0.6 (1) (2) (3) (4) 0.4 0.4 0.2 0.2 0 (1) (2) (3) (4) 0 0 1 2 3 0 VI (V) 2 3 VI (V) (1) Tamb = 125 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. (4) Tamb = −40 °C. Fig 10. ON resistance as a function of input voltage; VCC = 2.5 V Fig 11. ON resistance as a function of input voltage; VCC = 2.7 V NX3L1T5157_4 Product data sheet 1 © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 9 of 21 NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 001aag569 1.0 RON (Ω) 001aaj896 1.0 RON (Ω) 0.8 0.8 0.6 0.6 (1) (2) (3) (4) 0.4 (1) (2) (3) (4) 0.4 0.2 0.2 0 0 0 1 2 3 4 0 1 2 3 4 VI (V) 5 VI (V) (1) Tamb = 125 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. (4) Tamb = −40 °C. Fig 12. ON resistance as a function of input voltage; VCC = 3.3 V Fig 13. ON resistance as a function of input voltage; VCC = 4.3 V 12. Dynamic characteristics Table 9. Dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for load circuit see Figure 16. Symbol Parameter ten tdis enable time disable time 25 °C Conditions Unit Min Max Min Max (85 °C) Max (125 °C) VCC = 1.4 V to 1.6 V - 50 90 - 120 120 ns VCC = 1.65 V to 1.95 V - 36 70 - 80 90 ns VCC = 2.3 V to 2.7 V - 24 45 - 50 55 ns VCC = 2.7 V to 3.6 V - 22 40 - 45 50 ns VCC = 3.6 V to 4.3 V - 22 40 - 45 50 ns VCC = 1.4 V to 1.6 V - 32 70 - 80 90 ns VCC = 1.65 V to 1.95 V - 20 55 - 60 65 ns VCC = 2.3 V to 2.7 V - 12 25 - 30 35 ns VCC = 2.7 V to 3.6 V - 10 20 - 25 30 ns VCC = 3.6 V to 4.3 V - 10 20 - 25 30 ns S to Z or Yn; see Figure 14 S to Z or Yn; see Figure 14 NX3L1T5157_4 Product data sheet −40 °C to +125 °C Typ[1] © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 10 of 21 NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch Table 9. Dynamic characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for load circuit see Figure 16. Symbol Parameter tb-m 25 °C Conditions −40 °C to +125 °C Unit Min Typ[1] Max Min Max (85 °C) Max (125 °C) - 19 - 9 - - ns VCC = 1.65 V to 1.95 V - 17 - 7 - - ns VCC = 2.3 V to 2.7 V - 13 - 4 - - ns VCC = 2.7 V to 3.6 V - 10 - 3 - - ns VCC = 3.6 V to 4.3 V - 10 - 2 - - ns break-before-make see Figure 15 time VCC = 1.4 V to 1.6 V [2] [1] Typical values are measured at Tamb = 25 °C and VCC = 1.5 V, 1.8 V, 2.5 V, 3.3 V and 4.3 V respectively. [2] Break-before-make guaranteed by design. 12.1 Waveform and test circuits VI VM S input GND ten VOH Y1 connected to VEXT tdis VX Z output OFF to HIGH HIGH to OFF VX GND tdis Y0 connected to VEXT Z output HIGH to OFF OFF to HIGH VOH ten VX VX 001aag570 GND Measurement points are given in Table 10. Logic level: VOH is typical output voltage level that occurs with the output load. Fig 14. Enable and disable times Table 10. Measurement points Supply voltage Input Output VCC VM VX 1.4 V to 4.3 V 0.5VCC 0.9VOH NX3L1T5157_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 11 of 21 NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch VCC S Y0 Z G VI V VO RL Y1 VEXT = 1.5 V CL GND 001aag571 a. Test circuit VI 0.5VI 0.9VO 0.9VO VO tb-m 001aag572 b. Input and output measurement points Fig 15. Test circuit for measuring break-before-make timing VCC G VI V VO RL S Y0 1 Z Y1 2 switch VEXT = 1.5 V CL GND 001aag642 Test data is given in Table 11. Definitions test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. VEXT = External voltage for measuring switching times. Fig 16. Load circuit for switching times Table 11. Test data Supply voltage Input Load VCC VI tr, tf CL RL 1.4 V to 4.3 V VCC ≤ 2.5 ns 35 pF 50 Ω NX3L1T5157_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 12 of 21 NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 12.2 Additional dynamic characteristics Table 12. Additional dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise specified); tr = tf ≤ 2.5 ns; Tamb = 25 °C. Symbol Parameter Conditions THD fi = 20 Hz to 20 kHz; RL = 32 Ω; see Figure 17 f(−3dB) αiso total harmonic distortion Min Qinj 0.15 - % VCC = 1.65 V; VI = 1.2 V (p-p) - 0.10 - % VCC = 2.3 V; VI = 1.5 V (p-p) - 0.02 - % VCC = 2.7 V; VI = 2 V (p-p) - 0.02 - % VCC = 4.3 V; VI = 2 V (p-p) - 0.02 - % - 60 - MHz - −90 - dB VCC = 1.4 V to 3.6 V - 0.2 - V VCC = 3.6 V to 4.3 V - 0.3 - V VCC = 1.5 V - 3 - pC VCC = 1.8 V - 4 - pC VCC = 2.5 V - 6 - pC VCC = 3.3 V - 9 - pC VCC = 4.3 V - 15 - pC RL = 50 Ω; see Figure 18 isolation (OFF-state) fi = 100 kHz; RL = 50 Ω; see Figure 19 [1] charge injection Unit - −3 dB frequency response crosstalk voltage Max VCC = 1.4 V; VI = 1 V (p-p) [1] VCC = 1.4 V to 4.3 V [1] VCC = 1.4 V to 4.3 V Vct Typ [1] between digital inputs and switch; fi = 1 MHz; CL = 50 pF; RL = 50 Ω; see Figure 20 fi = 1 MHz; CL = 0.1 nF; RL = 1 MΩ; Vgen = 0 V; Rgen = 0 Ω; see Figure 21 fi is biased at 0.5VCC. 12.3 Test circuits VCC 0.5VCC RL S VIL or VIH Z Y0 1 switch Y1 2 fi switch S 1 VIL 2 VIH D GND 001aag573 Fig 17. Test circuit for measuring total harmonic distortion NX3L1T5157_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 13 of 21 NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch VCC 0.5VCC RL S VIL or VIH Y0 1 switch Y1 2 Z fi switch S 1 VIL 2 VIH dB GND 001aag574 Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads −3 dB. Fig 18. Test circuit for measuring the frequency response when channel is in ON-state 0.5VCC VCC 0.5VCC RL RL S VIL or VIH Y0 1 switch Y1 2 Z fi switch S 1 VIH 2 VIL dB GND 001aag561 Adjust fi voltage to obtain 0 dBm level at input. Fig 19. Test circuit for measuring isolation (OFF-state) NX3L1T5157_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 14 of 21 NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch VCC VI G logic input S Y0 1 Z Y1 2 switch S 1 VIL 2 VIH switch RL RL 0.5VCC 0.5VCC CL V VO 001aah442 a. Test circuit logic input (S) off on off Vct VO 001aah443 b. Input and output pulse definitions Fig 20. Test circuit for measuring crosstalk voltage between digital inputs and switch NX3L1T5157_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 15 of 21 NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch VCC S Y0 1 Z Y1 2 switch Rgen VI G VO RL CL Vgen GND 001aac366 a. Test circuit logic (S) off input on VO off ΔVO 001aac478 b. Input and output pulse definitions Definition: Qinj = ΔVO × CL. ΔVO = output voltage variation. Rgen = generator resistance. Vgen = generator voltage. Fig 21. Test circuit for measuring charge injection NX3L1T5157_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 16 of 21 NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 13. Package outline XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886 b 1 2 3 4× (2) L L1 e 6 5 4 e1 e1 6× A (2) A1 D E terminal 1 index area 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) max A1 max b D E e e1 L L1 mm 0.5 0.04 0.25 0.17 1.5 1.4 1.05 0.95 0.6 0.5 0.35 0.27 0.40 0.32 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. OUTLINE VERSION SOT886 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-07-15 04-07-22 MO-252 Fig 22. Package outline SOT886 (XSON6) NX3L1T5157_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 17 of 21 NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 14. Abbreviations Table 13. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal-Oxide Semiconductor ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model PDA Personal Digital Assistant 15. Revision history Table 14. Revision history Document ID Release date Data sheet status Change notice Supersedes NX3L1T5157_4 20100324 Product data sheet - NX3L1T5157_3 NX3L1T5157_3 20100208 Product data sheet - NX3L1T5157_2 Modifications: • • Section 2: IEC61000-4-2 added. Table 8: ON resistance (flatness) changed at VCC = 4.3 V. NX3L1T5157_2 20090417 Product data sheet - NX3L1T5157_1 NX3L1T5157_1 20080916 Product data sheet - - NX3L1T5157_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 18 of 21 NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. 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NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. NX3L1T5157_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 19 of 21 NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] NX3L1T5157_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 20 of 21 NX3L1T5157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 18. Contents 1 2 3 4 5 6 7 7.1 7.2 8 9 10 11 11.1 11.2 11.3 12 12.1 12.2 12.3 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ON resistance . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ON resistance test circuit and graphs. . . . . . . . 8 Dynamic characteristics . . . . . . . . . . . . . . . . . 10 Waveform and test circuits . . . . . . . . . . . . . . . 11 Additional dynamic characteristics . . . . . . . . . 13 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 18 Legal information. . . . . . . . . . . . . . . . . . . . . . . 19 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Contact information. . . . . . . . . . . . . . . . . . . . . 20 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 March 2010 Document identifier: NX3L1T5157_4