PHILIPS NX3V1T66GM

NX3V1T66
Low-ohmic single-pole single-throw analog switch
Rev. 05 — 24 March 2010
Product data sheet
1. General description
The NX3V1T66 provides one single-pole single-throw analog switch function. It has two
input/output terminals (Y and Z) and an active HIGH enable input pin (E). When pin E is
LOW, the analog switch is turned off.
Schmitt trigger action at the enable input (E) makes the circuit tolerant to slower input rise
and fall times across the entire VCC range from 1.4 V to 4.3 V.
A low input voltage threshold allows pin E to be driven by lower level logic signals without
a significant increase in supply current ICC. This makes it possible for the NX3V1T66 to
switch 4.3 V signals with a 1.8 V digital controller, eliminating the need for logic level
translation.
The NX3V1T66 allows signals with amplitude up to VCC to be transmitted from Y to Z or
from Z to Y. Its ultra-low ON resistance (0.3 Ω) and flatness (0.1 Ω) ensures minimal
attenuation and distortion of transmitted signals.
2. Features
„ Wide supply voltage range from 1.4 V to 4.3 V
„ Very low ON resistance (peak):
‹ 0.8 Ω (typical) at VCC = 1.4 V
‹ 0.5 Ω (typical) at VCC = 1.65 V
‹ 0.3 Ω (typical) at VCC = 2.3 V
‹ 0.25 Ω (typical) at VCC = 2.7 V
‹ 0.25 Ω (typical) at VCC = 4.3 V
„ High noise immunity
„ ESD protection:
‹ HBM JESD22-A114F Class 3A exceeds 7500 V
‹ MM JESD22-A115-A exceeds 200 V
‹ CDM AEC-Q100-011 revision B exceeds 1000 V
„ CMOS low-power consumption
„ Latch-up performance exceeds 100 mA per JESD 78B Class II Level A
„ Enable input accepts voltages above supply voltage
„ 1.8 V control logic at VCC = 3.6 V
„ High current handling capability (500 mA continuous current under 3.3 V supply)
„ Specified from −40 °C to +85 °C and from −40 °C to +125 °C
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
3. Applications
„ Cell phone
„ PDA
„ Portable media player
4. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range
Name
Description
Version
NX3V1T66GW
−40 °C to +125 °C
TSSOP5 plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
SOT353-1
NX3V1T66GM
−40 °C to +125 °C
XSON6
SOT886
plastic extremely thin small outline package; no leads;
6 terminals; body 1 × 1.45 × 0.5 mm
5. Marking
Table 2.
Marking codes[1]
Type number
Marking code
NX3V1T66GW
dO
NX3V1T66GM
dO
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
6. Functional diagram
Y
E
Z
Z
Y
E
001aah372
001aag487
Fig 1.
Logic symbol
Fig 2.
Logic diagram
NX3V1T66_5
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 05 — 24 March 2010
2 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
7. Pinning information
7.1 Pinning
NX3V1T66
NX3V1T66
Y
1
Z
2
GND
3
5
4
VCC
Y
1
6
VCC
Z
2
5
n.c.
GND
3
4
E
E
001aah555
Transparent top view
001aai591
Fig 3. Pin configuration SOT353-1 (TSSOP5)
Fig 4.
Pin configuration SOT886 (XSON6)
7.2 Pin description
Table 3.
Pin description
Symbol
Pin
Description
SOT353-1
SOT886
Y
1
1
independent input or output
Z
2
2
independent output or input
GND
3
3
ground (0 V)
E
4
4
enable input (active HIGH)
n.c.
-
5
not connected
VCC
5
6
supply voltage
8. Functional description
Table 4.
Function table[1]
Input E
Switch
L
OFF-state
H
ON-state
[1]
H = HIGH voltage level; L = LOW voltage level.
NX3V1T66_5
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 05 — 24 March 2010
3 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
VCC
supply voltage
Conditions
Max
Unit
−0.5
+4.6
V
[1]
−0.5
+4.6
V
[2]
−0.5
VCC + 0.5 V
VI
input voltage
VSW
switch voltage
IIK
input clamping current
VI < −0.5 V
−50
-
mA
ISK
switch clamping current
VI < −0.5 V or VI > VCC + 0.5 V
-
±50
mA
ISW
switch current
VSW > −0.5 V or VSW < VCC + 0.5 V;
source or sink current
-
±500
mA
VSW > −0.5 V or VSW < VCC + 0.5 V;
pulsed at 1 ms duration, < 10 % duty cycle;
peak current
-
±750
mA
−65
+150
°C
-
250
mW
Tstg
enable input E
Min
storage temperature
Ptot
total power dissipation
Tamb = −40 °C to +125 °C
[3]
[1]
The minimum input voltage rating may be exceeded if the input current rating is observed.
[2]
The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not
exceed 4.6 V.
[3]
For TSSOP5 package: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 package: above 118 °C the value of Ptot derates linearly with 7.8 mW/K.
10. Recommended operating conditions
Table 6.
Recommended operating conditions
Symbol Parameter
VCC
supply voltage
VI
input voltage
VSW
switch voltage
Tamb
ambient temperature
Δt/ΔV
input transition rise and fall rate
Conditions
enable input E
[1]
VCC = 1.4 V to 4.3 V
[2]
Min
Max
Unit
1.4
4.3
V
0
4.3
V
0
VCC
V
−40
+125
°C
-
200
ns/V
[1]
To avoid sinking GND current from of terminal Z when switch current flows in terminal Y, the voltage drop across the bidirectional switch
must not exceed 0.4 V. If the switch current flows into terminal Z, no GND current will flow from terminal Y. In this case, there is no limit
for the voltage drop across the switch.
[2]
Applies to control signal levels.
NX3V1T66_5
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 05 — 24 March 2010
4 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
11. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter
VIH
VIL
HIGH-level
input voltage
LOW-level
input voltage
Tamb = 25 °C
Conditions
Typ
Max
Min
VCC = 1.4 V to 1.6 V
0.9
-
-
0.9
-
-
V
VCC = 1.65 V to 1.95 V
0.9
-
-
0.9
-
-
V
VCC = 2.3 V to 2.7 V
1.1
-
-
1.1
-
-
V
VCC = 2.7 V to 3.6 V
1.3
-
-
1.3
-
-
V
VCC = 3.6 V to 4.3 V
1.4
-
-
1.4
-
-
V
VCC = 1.4 V to 1.6 V
-
-
0.3
-
0.3
0.3
V
VCC = 1.65 V to 1.95 V
-
-
0.4
-
0.4
0.3
V
VCC = 2.3 V to 2.7 V
-
-
0.4
-
0.4
0.4
V
VCC = 2.7 V to 3.6 V
-
-
0.5
-
0.5
0.5
V
VCC = 3.6 V to 4.3 V
-
-
0.6
-
0.6
0.6
V
VCC = 1.4 V to 3.6 V
-
-
±5
-
±50
±500
nA
VCC = 3.6 V to 4.3 V
-
-
±10
-
±50
±500
nA
VCC = 1.4 V to 3.6 V
-
-
±5
-
±50
±500
nA
VCC = 3.6 V to 4.3 V
-
-
±10
-
±50
±500
nA
VCC = 3.6 V
-
-
100
-
690
6000
nA
VCC = 4.3 V
-
-
150
-
800
7000
nA
input leakage
current
enable input E; VI = GND to 4.3 V;
VCC = 1.4 V to 4.3 V
IS(OFF)
OFF-state
leakage
current
Y port; see Figure 5
ON-state
leakage
current
Z port; see Figure 6
ICC
ΔICC
Unit
Min
II
IS(ON)
Tamb = −40 °C to +125 °C
Max
Max
(85 °C) (125 °C)
supply current VI = VCC or GND; VCC = 3.6 V;
VSW = GND or VCC; IO = 0 A
additional
VSW = GND or VCC
supply current
VI = 2.6 V; VCC = 4.3 V
-
2.0
4.0
-
7
7
μA
VI = 2.6 V; VCC = 3.6 V
-
0.35
0.7
-
1
1
μA
VI = 1.8 V; VCC = 4.3 V
-
7.0
10.0
-
15
15
μA
VI = 1.8 V; VCC = 3.6 V
-
2.5
4.0
-
5
5
μA
VI = 1.8 V; VCC = 2.5 V
-
50
200
-
300
500
nA
CI
input
capacitance
-
1.0
-
-
-
-
pF
CS(OFF)
OFF-state
capacitance
-
70
-
-
-
-
pF
CS(ON)
ON-state
capacitance
-
205
-
-
-
-
pF
NX3V1T66_5
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 05 — 24 March 2010
5 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
11.1 Test circuits
VCC
VCC
E
VIL
Z
VI
E
VIH
Y
IS
IS
GND
VO
Z
Y
GND
VI
001aag488
001aag489
VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V.
Fig 5.
VO
VI = 0.3 V or VCC − 0.3 V; VO = open circuit.
Test circuit for measuring OFF-state leakage
current
Fig 6.
Test circuit for measuring ON-state leakage
current
11.2 ON resistance
Table 8.
Resistance RON
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 8 to Figure 14.
Symbol
RON(peak)
Parameter
ON resistance
(peak)
Tamb = −40 °C to +85 °C Tamb = −40 °C to +125 °C Unit
Conditions
Min
Typ[1]
Max
Min
Max
VCC = 1.4 V
-
0.8
1.9
-
2.1
Ω
VCC = 1.65 V
-
0.5
0.8
-
0.9
Ω
VCC = 2.3 V
-
0.3
0.5
-
0.6
Ω
VCC = 2.7 V
-
0.25
0.45
-
0.5
Ω
-
0.25
0.45
-
0.5
Ω
VCC = 1.4 V
-
0.5
1.7
-
1.8
Ω
VCC = 1.65 V
-
0.25
0.6
-
0.7
Ω
VCC = 2.3 V
-
0.1
0.2
-
0.2
Ω
VCC = 2.7 V
-
0.1
0.2
-
0.2
Ω
VCC = 4.3 V
-
0.1
0.25
-
0.25
Ω
VI = GND to VCC;
ISW = 100 mA; see Figure 7
VCC = 4.3 V
RON(flat)
ON resistance
(flatness)
VI = GND to VCC;
ISW = 100 mA
[2]
[1]
Typical values are measured at Tamb = 25 °C.
[2]
Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and
temperature.
NX3V1T66_5
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 05 — 24 March 2010
6 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
11.3 ON resistance test circuit and graphs
001aah800
0.8
RON
(Ω)
0.6
VSW
(1)
0.4
VCC
(2)
E
VIH
(3)
(4)
Z
VI
0.2
Y
GND
(5)
(6)
ISW
0
0
1
2
RON = VSW / ISW.
3
4
5
VI (V)
001aah375
(1) VCC = 1.5 V.
(2) VCC = 1.8 V.
(3) VCC = 2.5 V.
(4) VCC = 2.7 V.
(5) VCC = 3.3 V.
(6) VCC = 4.3 V.
Measured at Tamb = 25 °C.
Fig 7.
Test circuit for measuring ON resistance
Fig 8.
Typical ON resistance as a function of input
voltage
NX3V1T66_5
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 05 — 24 March 2010
7 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
001aah805
0.8
RON
(Ω)
001aah801
0.6
RON
(Ω)
0.6
0.4
(1)
0.4
(2)
(1)
(3)
(2)
0.2
(3)
0.2
(4)
(4)
0
0
0
1
2
3
0
1
2
(1) Tamb = 125 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
(4) Tamb = −40 °C.
Fig 9.
ON resistance as a function of input voltage;
VCC = 1.5 V
001aah802
0.6
3
VI (V)
VI (V)
RON
(Ω)
Fig 10. ON resistance as a function of input voltage;
VCC = 1.8 V
001aah803
0.6
RON
(Ω)
0.4
0.4
(1)
(1)
(2)
(2)
(3)
0.2
(3)
0.2
(4)
0
(4)
0
0
1
2
3
0
VI (V)
2
3
VI (V)
(1) Tamb = 125 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
(4) Tamb = −40 °C.
Fig 11. ON resistance as a function of input voltage;
VCC = 2.5 V
Fig 12. ON resistance as a function of input voltage;
VCC = 2.7 V
NX3V1T66_5
Product data sheet
1
© NXP B.V. 2010. All rights reserved.
Rev. 05 — 24 March 2010
8 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
001aah804
0.6
RON
(Ω)
001aaj895
0.6
RON
(Ω)
0.4
0.4
(1)
(2)
(3)
(4)
(1)
(2)
(3)
0.2
0.2
(4)
0
0
0
1
2
3
4
0
1
2
3
4
VI (V)
5
VI (V)
(1) Tamb = 125 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
(4) Tamb = −40 °C.
Fig 13. ON resistance as a function of input voltage;
VCC = 3.3 V
Fig 14. ON resistance as a function of input voltage;
VCC = 4.3 V
12. Dynamic characteristics
Table 9.
Dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit Figure 16.
Symbol Parameter
ten
enable time
tdis
[1]
disable time
25 °C
Conditions
−40 °C to +125 °C
Unit
Min
Typ[1]
Max
Min
VCC = 1.4 V to 1.6 V
-
35
49
-
53
57
ns
VCC = 1.65 V to 1.95 V
-
28
40
-
43
48
ns
VCC = 2.3 V to 2.7 V
-
20
30
-
32
35
ns
VCC = 2.7 V to 3.6 V
-
18
28
-
30
32
ns
VCC = 3.6 V to 4.3 V
-
18
28
-
30
32
ns
VCC = 1.4 V to 1.6 V
-
32
70
-
80
90
ns
VCC = 1.65 V to 1.95 V
-
23
55
-
60
65
ns
VCC = 2.3 V to 2.7 V
-
14
25
-
30
35
ns
VCC = 2.7 V to 3.6 V
-
11
20
-
25
30
ns
VCC = 3.6 V to 4.3 V
-
11
20
-
25
30
ns
Max
Max
(85 °C) (125 °C)
E to Y; see Figure 15
E to Y; see Figure 15
Typical values are measured at Tamb = 25 °C and VCC = 1.5 V, 1.8 V, 2.5 V, 3.3 V and 4.3 V respectively.
NX3V1T66_5
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 05 — 24 March 2010
9 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
12.1 Waveform and test circuits
VI
E input
VM
GND
ten
Y output
OFF to HIGH
HIGH to OFF
tdis
VOH
VX
VX
GND
switch
disabled
switch
enabled
switch
disabled
001aah875
Measurement points are given in Table 10.
Logic level: VOH is the typical output voltage that occurs with the output load.
Fig 15. Enable and disable times
Table 10.
Measurement points
Supply voltage
Input
Output
VCC
VM
VX
1.4 V to 4.3 V
0.5VCC
0.9VOH
VCC
E
Y/Z
G
VI
V
VO
RL
Z/Y
CL
VEXT = 1.5 V
001aah377
Test data is given in Table 11.
Definitions test circuit:
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
VEXT = External voltage for measuring switching times.
Fig 16. Load circuit for switching times
Table 11.
Test data
Supply voltage
Input
Load
VCC
VI
tr, tf
CL
RL
1.4 V to 4.3 V
VCC
≤ 2.5 ns
35 pF
50 Ω
NX3V1T66_5
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 05 — 24 March 2010
10 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
12.2 Additional dynamic characteristics
Table 12. Additional dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise
specified); tr = tf ≤ 2.5 ns; Tamb = 25 °C.
Symbol Parameter
Conditions
THD
fi = 20 Hz to 20 kHz; RL = 32 Ω; see Figure 17
f(−3dB)
αiso
total harmonic
distortion
Min
Qinj
0.05
-
%
VCC = 1.65 V; VI = 1.2 V (p-p)
-
0.03
-
%
VCC = 2.3 V; VI = 1.5 V (p-p)
-
0.01
-
%
VCC = 2.7 V; VI = 2 V (p-p)
-
0.01
-
%
VCC = 4.3 V; VI = 2 V (p-p)
-
0.01
-
%
-
25
-
MHz
-
−90
-
dB
VCC = 1.4 V to 3.6 V
-
0.3
-
V
VCC = 3.6 V to 4.3 V
-
0.5
-
V
VCC = 1.5 V
-
6.5
-
pC
VCC = 1.8 V
-
6.5
-
pC
VCC = 2.5 V
-
6.5
-
pC
VCC = 3.3 V
-
6.5
-
pC
VCC = 4.3 V
-
12
-
pC
RL = 50 Ω; see Figure 18
isolation (OFF-state)
fi = 100 kHz; RL = 50 Ω; see Figure 19
[1]
charge injection
Unit
-
−3 dB frequency
response
crosstalk voltage
Max
VCC = 1.4 V; VI = 1 V (p-p)
[1]
VCC = 1.4 V to 4.3 V
[1]
VCC = 1.4 V to 4.3 V
Vct
Typ
[1]
between digital inputs and switch;
fi = 1 MHz; CL = 50 pF; RL = 50 Ω; see Figure 20
fi = 1 MHz; CL = 0.1 nF; RL = 1 MΩ; Vgen = 0 V;
Rgen = 0 Ω; see Figure 21
fi is biased at 0.5VCC.
12.3 Test circuits
VCC
0.5VCC
E
VIH
Y/Z
RL
Z/Y
D
fi
001aah378
Fig 17. Test circuit for measuring total harmonic distortion
NX3V1T66_5
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 05 — 24 March 2010
11 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
VCC
0.5VCC
E
VIH
RL
Y/Z
Z/Y
dB
fi
001aah379
Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads −3 dB.
Fig 18. Test circuit for measuring the frequency response when channel is in ON-state
0.5VCC
VCC
RL
VIL
0.5VCC
E
Y/Z
RL
Z/Y
dB
fi
001aah380
Adjust fi voltage to obtain 0 dBm level at input.
Fig 19. Test circuit for measuring isolation (OFF-state)
NX3V1T66_5
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 05 — 24 March 2010
12 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
VCC
E
Y/Z
G
VI
Z/Y
RL
RL
0.5VCC
0.5VCC
CL
V
VO
001aah383
a. Test circuit
logic
input (E)
off
on
VO
off
Vct
001aah381
b. Input and output pulse definitions
Fig 20. Test circuit for measuring crosstalk voltage between digital inputs and switch
NX3V1T66_5
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 05 — 24 March 2010
13 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
VCC
E
Y/Z
G
VI
V
VO
RL
Z/Y
Rgen
CL
Vgen
GND
001aah385
a. Test circuit
logic
input (E)
off
on
VO
off
VO
001aah384
b. Input and output pulse definitions
Definition: Qinj = ΔVO × CL.
ΔVO = output voltage variation.
Rgen = generator resistance.
Vgen = generator voltage.
Fig 21. Test circuit for measuring charge injection
NX3V1T66_5
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 05 — 24 March 2010
14 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
13. Package outline
TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm
E
D
SOT353-1
A
X
c
y
HE
v M A
Z
5
4
A2
A
(A3)
A1
θ
1
Lp
3
L
e
w M
bp
detail X
e1
0
1.5
3 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D(1)
E(1)
e
e1
HE
L
Lp
v
w
y
Z(1)
θ
mm
1.1
0.1
0
1.0
0.8
0.15
0.30
0.15
0.25
0.08
2.25
1.85
1.35
1.15
0.65
1.3
2.25
2.0
0.425
0.46
0.21
0.3
0.1
0.1
0.60
0.15
7°
0°
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
OUTLINE
VERSION
SOT353-1
REFERENCES
IEC
JEDEC
JEITA
MO-203
SC-88A
EUROPEAN
PROJECTION
ISSUE DATE
00-09-01
03-02-19
Fig 22. Package outline SOT353-1 (TSSOP5)
NX3V1T66_5
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 05 — 24 March 2010
15 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm
SOT886
b
1
2
3
4×
(2)
L
L1
e
6
5
e1
4
e1
6×
A
(2)
A1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
max
A1
max
b
D
E
e
e1
L
L1
mm
0.5
0.04
0.25
0.17
1.5
1.4
1.05
0.95
0.6
0.5
0.35
0.27
0.40
0.32
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
OUTLINE
VERSION
SOT886
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-07-15
04-07-22
MO-252
Fig 23. Package outline SOT886 (XSON6)
NX3V1T66_5
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 05 — 24 March 2010
16 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
14. Abbreviations
Table 13.
Abbreviations
Acronym
Description
CDM
Charged Device Model
CMOS
Complementary Metal Oxide Semiconductor
ESD
ElectroStatic Discharge
HBM
Human Body Model
MM
Machine Model
PDA
Personal Digital Assistant
15. Revision history
Table 14.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
NX3V1T66_5
20100324
Product data sheet
-
NX3V1T66_4
NX3V1T66_4
20100202
Product data sheet
-
NX3V1T66_3
Modifications:
•
Table 8: ON resistance (flatness) changed at VCC = 4.3 V.
NX3V1T66_3
20090504
Product data sheet
-
NX3V1T66_2
NX3V1T66_2
20080724
Product data sheet
-
NX3V1T66_1
NX3V1T66_1
20080327
Product data sheet
-
-
NX3V1T66_5
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 05 — 24 March 2010
17 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
16.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. The product is not designed, authorized or warranted to be
suitable for use in medical, military, aircraft, space or life support equipment,
nor in applications where failure or malfunction of an NXP Semiconductors
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. NXP Semiconductors accepts no
liability for inclusion and/or use of NXP Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
NX3V1T66_5
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 05 — 24 March 2010
18 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
17. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
NX3V1T66_5
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 05 — 24 March 2010
19 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
18. Contents
1
2
3
4
5
6
7
7.1
7.2
8
9
10
11
11.1
11.2
11.3
12
12.1
12.2
12.3
13
14
15
16
16.1
16.2
16.3
16.4
17
18
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
Functional description . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Recommended operating conditions. . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
ON resistance . . . . . . . . . . . . . . . . . . . . . . . . . . 6
ON resistance test circuit and graphs. . . . . . . . 7
Dynamic characteristics . . . . . . . . . . . . . . . . . . 9
Waveform and test circuits . . . . . . . . . . . . . . . 10
Additional dynamic characteristics . . . . . . . . . 11
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Contact information. . . . . . . . . . . . . . . . . . . . . 19
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 24 March 2010
Document identifier: NX3V1T66_5