Je]R
BSZ520N15NS3 G
TM
"%&$!"# 3 Power-Transistor
Product Summary
Features
Q ) AD:> :J65 7@B 5454 4@? F6BC:@?
Q ( 492 ? ? 6=
? @B> 2 ==
6F6=
V 9I
)-(
K
R 9I"\[#$ZNd
-*
Z"
I9
*)
6
Q H46=
=
6? D82 D6 492 B86 HR 9I"\[# AB@5E4D ) ' Q& @G @? B6C:CD2 ? 46 R 9I"\[#
F=%JI9IED%0
Q T @A6B2 D:? 8 D6> A6B2 DEB6
Q * 3 7B66 =
62 5 A=
2 D:? 8 , @" - 4@> A=
:2 ? D
Q + E2 =
:7:65 2 44@B5:? 8 D@ $ )#
7@B D2 B86D2 AA=
:42 D:@?
Q" 2 =
@86? 7B66 2 44@B5:? 8 D@ # Type
Package
Marking
- 1 ( ( - !
F=%JI9IED%0
-*(D)-D
Maximum ratings, 2 DT W T E? =
6CC@D96BG:C6 CA64:7:65
Parameter
Symbol Conditions
@? D:? E@EC5B2 :? 4EBB6? D
I9
Value
T 8 T
*)
T 8 T
),
Unit
6
* E=
C65 5B2 :? 4EBB6? D*#
I 9$]aY_R
T 8 T
0,
F2 =
2 ? 496 6? 6B8I C:? 8=
6 AE=
C6
E 6I
I 9 R =I "
.(
Z@
!2 D6 C@EB46 F@=
D2 86
V =I
q*(
K
* @G6B 5:CC:A2 D:@?
P `\`
-/
L
) A6B2 D:? 8 2 ? 5 CD@B2 86 D6> A6B2 DEB6
T W T _`T
T
T 8 T
# 4=
:> 2 D:4 42 D68@BI #( # )#
*#
, 6F
$ - . 2 ? 5 $ - C66 7:8EB6 A2 86 BSZ520N15NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
%
*&*
%
%
.(
)-(
%
%
Thermal characteristics
.96B> 2 =B6C:CD2 ? 46 ;E? 4D:@? 42 C6
R `U@8
.96B> 2 =B6C:CD2 ? 46
WE? 4D:@? 2 > 3 :6? D
R `U@6
4> * 4@@=
:? 8 2 B62 +#
A'L
Electrical characteristics, 2 DT W T E? =
6CC@D96BG:C6 CA64:7:65
Static characteristics
B2 :? C@EB46 3 B62 <5@G? F@=
D2 86
V "7H#9II V =I / I 9 > !2 D6 D9B6C9@=
5 F@=
D2 86
V =I"`U#
V 9I4V =I I 9 V *
+
,
16B@ 82 D6 F@=
D2 86 5B2 :? 4EBB6? D
I 9II
V 9I / V =I / T W T
%
(&)
)
V 9I / V =I / T W T
%
)(
)((
K
r6
!2 D6C@EB46 =
62 <2 86 4EBB6? D
I =II
V =I / V 9I /
%
)
)((
[6
B2 :? C@EB46 @? CD2 D6 B6C:CD2 ? 46
R 9I"\[#
V =I / I 9 %
,*
-*
Z"
V =I / I 9 %
,*
-*
%
*&)
%
"
))
*)
%
I
!2 D6 B6C:CD2 ? 46
R=
J^N[_P\[QaP`N[PR
g S_
+#
6F:46 @? > > H > > H > > 6A@HI * 4@? ? 64D:@? * :CF6BD:42 =:? CD:=
=2 :B
, 6F
gV 9Ig5*gI 9gR 9I"\[#ZNd
I 9 , G:D9 4>* @? 6 =
2 I6B V > D9:4< 4@AA6B 2 B62 7@B 5B2 :?
A2 86 BSZ520N15NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
./(
01(
%
0(
%
Dynamic characteristics
#? AED42 A2 4:D2 ? 46
C V__
V =I / V 9I / f ' " J
) EDAED42 A2 4:D2 ? 46
C \__
, 6F6BC6 DB2 ? C76B 42 A2 4:D2 ? 46
C ^__
%
+&,
%
.EB? @? 56=
2 I D:> 6
t Q"\[#
%
/
%
, :C6 D:> 6
t^
%
-
%
.EB? @7756=
2 I D:> 6
t Q"\SS#
%
)(
%
tS
%
+
%
!2 D6 D@ C@EB46 492 B86
Q T_
%
+&-
%
!2 D6 D@ 5B2 :? 492 B86
Q TQ
%
)&-
%
%
+
%
2=
=D:> 6
V 99 / V =I / I 9 R = "
]<
[_
!2 D6 92 BT6 92 B2 4D6B:CD:4C,#
V 99 / I 9 V =I D@ /
[8
- G:D49:? 8 492 B86
Q _c
!2 D6 492 B86 D@D2 =
QT
%
0&/
)*
!2 D6 A=
2 D62 E F@=
D2 86
V ]YN`RNa
%
-&*
%
) EDAED492 B86
Q \__
%
**
*1
[8
%
%
*)
6
%
%
0,
%
(&1
)&*
K
%
..
%
[_
%
**.
%
[8
V 99 / V =I /
K
Reverse Diode
:@56 4@? D:? @EC7@BG2 B5 4EBB6? D
II
:@56 AE=
C6 4EBB6? D
I I$]aY_R
:@56 7@BG2 B5 F@=
D2 86
V I9
, 6F6BC6 B64@F6BI D:> 6
t ^^
, 6F6BC6 B64@F6BI 492 B86
Q ^^
,#
, 6F
T 8 T
V =I / I < T W T
V H / I < Qi <'Qt V C
- 66 7:8EB6 7@B 82 D6 492 B86 A2 B2 > 6D6B 567:? :D:@?
A2 86 BSZ520N15NS3 G
1 Power dissipation
2 Drain current
P `\`4S"T 8#
I 94S"T 8 V =I" /
60
25
50
20
40
I D [A]
P tot [W]
15
30
10
20
5
10
0
0
0
40
80
120
160
0
40
80
T C [°C]
120
160
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I 94S"V 9I T 8 T D 4(
Z `U@84S"t ]#
A2 B2 > 6D6B t ]
A2 B2 > 6D6B D 4t ]'T
102
101
VC
VC
V C
101
Z thJC [K/W]
I D [A]
>C
98
(&-
100
(&*
100
(&)
(&(-
(&(*
(&()
C:? 8=
6 AE=
C6
10-1
10
10-1
-1
10
0
10
1
10
2
10
3
V DS [V]
, 6F
t p [s]
A2 86 BSZ520N15NS3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I 94S"V 9I T W T
R 9I"\[#4S"I 9 T W T
A2 B2 > 6D6B V =I
A2 B2 > 6D6B V =I
50
80
/
70
/
/
/
40
60
/
R DS(on) [m ]
I D [A]
30
/
20
/
50
/
/
40
30
20
10
10
/
/
0
0
1
0
2
3
0
10
20
V DS [V]
30
40
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I 94S"V =I KV 9Ig5*gI 9gR 9I"\[#ZNd
g S_4S"I 9 T W T
A2 B2 > 6D6B T W
50
40
35
40
30
25
I D [A]
g fs [S]
30
20
20
15
10
10
5
T
T
0
0
0
2
4
6
8
V GS [V]
, 6F
0
10
20
30
40
50
60
I D [A]
A2 86 BSZ520N15NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R 9I"\[#4S"T W I 9 V =I /
V =I"`U#4S"T W V =I4V 9I
A2 B2 > 6D6B I 9
140
4
120
3.5
V
3
100
2.5
80
V GS(th) [V]
R DS(on) [m ]
V 60
2
1.5
`e]
40
1
20
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C 4S"V 9I V =I / f ' " J
I <4S"V I9#
A2 B2 > 6D6B T W
104
100
T
8V__
I F [A]
C [pF]
103
8\__
102
T 10
8^__
101
T
T 100
1
0
20
40
60
80
100
, 6F
0
0.5
1
1.5
2
V SD [V]
V DS [V]
A2 86 BSZ520N15NS3 G
13 Avalanche characteristics
14 Typ. gate charge
I 6I4S"t 6K R =I "
V =I4S"Q TN`R I 9 AE=
C65
A2 B2 > 6D6B T W"_`N^`#
A2 B2 > 6D6B V 99
100
10
/
8
/
T
10
/
V GS [V]
I AS [A]
6
4
T
T
2
1
0
1
10
100
1000
0
2
4
6
8
10
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V 7H"9II#4S"T W I 9 > 165
V =I
Qg
160
V BR(DSS) [V]
155
150
V T _"`U#
145
140
Q T "`U#
Q _c
Q T_
135
-60
-20
20
60
100
140
Q g ate
Q TQ
180
T j [°C]
, 6F
A2 86 BSZ520N15NS3 G
Package Outline: PG-TDSON-8
, 6F
A2 86 BSZ520N15NS3 G
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