PHILIPS BUJ103AU

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103AU
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for
use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCESM
VCBO
VCEO
IC
ICM
Ptot
VCEsat
hFEsat
tf
Collector-emitter voltage peak value
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
D.C. current gain
Fall time
VBE = 0 V
0.25
12.5
46
700
700
400
4
8
50
1.0
60
V
V
V
A
A
W
V
PINNING - SOT533
PIN
PIN CONFIGURATION
base
2
collector
3
emitter
ns
SYMBOL
DESCRIPTION
1
tab
Tmb ≤ 25 ˚C
IC = 3.0 A;IB = 0.6 A
IC = 3.0 A; VCE = 5 V
IC = 2.5 A; IB1= 0.4 A
c
b
collector
1
2
Top view
3
e
MBK915
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
VCBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Tmb ≤ 25 ˚C
MIN.
MAX.
UNIT
-65
-
700
400
700
4
8
2
4
50
150
150
V
V
V
A
A
A
A
W
˚C
˚C
TYP.
MAX.
UNIT
-
2.5
K/W
70
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Junction to mounting base
Rth j-a
Junction to ambient
October 1999
CONDITIONS
in free air
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103AU
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICES,ICBO
ICES
Collector cut-off current 1
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
ICEO
IEBO
VCEOsust
Collector cut-off current 1
Emitter cut-off current
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
hFEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
VCEO = VCEOMmax (400V)
VEB = 7 V; IC = 0 A
IB = 0 A; IC = 10 mA;
L = 25 mH
IC = 3.0 A; IB = 0.6 A
IC = 3.0 A; IB = 0.6 A
IC = 1 mA; VCE = 5 V
IC = 500mA; VCE = 5 V
IC = 2.0 A; VCE = 5 V
IC = 3.0 A; VCE = 5 V
MIN.
TYP.
MAX.
UNIT
-
-
0.1
0.5
mA
mA
400
-
0.1
0.1
-
mA
mA
V
10
13
11
-
0.25
0.97
17
22
16
12.5
1.0
1.5
32
32
22
-
V
V
TYP.
MAX.
UNIT
0.48
2.7
0.27
0.6
3.3
0.35
µs
µs
µs
1.2
46
1.4
60
µs
ns
1.34
98
1.8
200
µs
ns
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
ton
ts
tf
PARAMETER
CONDITIONS
Switching times (resistive load)
ICon = 2.5 A; IBon = -IBoff = 0.5 A;
RL = 75 ohms; VBB2 = 4V;
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
ts
tf
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
ts
tf
Turn-off storage time
Turn-off fall time
ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH;
-VBB = 5 V
ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
1 Measured with half sine-wave voltage (curve tracer).
October 1999
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103AU
ICon
90 %
+ 50v
100-200R
90 %
IC
10 %
ts
Horizontal
ton
tf
toff
Oscilloscope
IBon
IB
Vertical
10 %
300R
1R
tr
30ns
6V
30-60 Hz
-IBoff
Fig.1. Test circuit for VCEOsust.
Fig.4. Switching times waveforms with resistive load.
VCC
IC / mA
LC
250
IBon
100
LB
T.U.T.
10
0
-VBB
min
VCE / V
VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
Fig.5. Test circuit inductive load.
VCC = 300 V; -VBE = 5 V, LC = 200 uH; LB = 1 uH
VCC
ICon
90 %
IC
RL
VIM
10 %
RB
0
T.U.T.
ts
toff
tp
IB
tf
t
IBon
T
t
-IBoff
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.
October 1999
Fig.6. Switching times waveforms with inductive load.
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
120
BUJ103AU
Normalised Power Derating
PD%
VCEsat/V
110
2.0
100
90
1.6
80
IC=1A
70
2A
3A
4A
1.2
60
50
0.8
40
30
0.4
20
10
0
0
20
40
60
80
100
Tmb / C
120
0.0
0.01
140
0.10
1.00
10.00
IB/A
Fig.7. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Tmb)
Fig.10. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IB); Tj=25˚C
HFE
50
VBEsat/V
1.4
25C
100C
30
IC/IB = 4
1.2
20
15
-40C
10
25C
1
-40C
5
0.8
VCE = 1V
2
0.6
0.01
0.05
0.1
0.5
1
2
3
5
100C
0.1
10
0.2
0.3
0.5
IC/A
Fig.8. Typical DC current gain. hFE = f(IC)
parameter VCE
1
IC/A
2
3
5
10
Fig.11. Base-Emitter saturation voltage.
Solid lines = typ values, VBEsat = f(IC).
HFE
50
VCEsat/V
0.8
25C
30
100C
20
0.6
IC/IB = 4
15
-40C
10
100C
0.4
25C
5
VCE = 5V
0.2
2
-40C
0
0.01
0.05
0.1
0.5
1
2
3
5
0.5
10
5
Fig.12. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IC).
Fig.9. Typical DC current gain. hFE = f(IC)
parameter VCE
October 1999
2
IC/A
IC/A
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103AU
VCC
Zth j-mb / (K/W)
10
D=
0.5
1
LC
0.2
0.1
0.1
VCL(RBSOAR)
0.05
PROBE POINT
IBon
0.02
PD
tp
D=
LB
tp
T
0
T.U.T.
-VBB
t
T
0.01
10us
1ms
t/s
0.1s
10ms
Fig.13. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
Fig.16. Test Circuit for reverse bias safe operating
area.
Vcl ≤ 700V; Vcc = 150V; VBB = -5V; LB = 1µH; Lc =
200µH
ton/toff (ns)
10,000
IC (A)
toff
5,000
9
100C
3,000
2,000
8
1,000
500
7
25C
ton
VBE=-5V
300
200
IC/IB = 5
6
100
1
2
3
4
5
6
IC/A
Fig.14. Resistive Switching.
ton,toff = f(IC).
5
4
tfi/tsi (ns)
5,000
100C
3
tsi
2,000
1,000
25C
500
2
IC/IB = 5
200
100
1
tfi
50
20
0
0
10
1
2
3
4
5
6
200
300
400
500
600
700
800
900
VCEclamp (V)
Fig.17. Reverse bias safe operating area Tj ≤ Tjmax
IC/A
Fig.15. Inductive switching.
ton, toff = f(IC)
October 1999
100
5
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103AU
IC (A)
100
Duty Cycle = 0.01
Icm max
tp =
10
20us
II
Ic max
(1)
50us
1
100us
200us
(2)
500us
I
0.1
DC
III
0.01
0.001
1
10
100
1,000
VCEclamp (V)
Fig.18. Forward bias safe operating area. Ths ≤ 25 ˚C
(1)
(2)
I
II
III
NB:
October 1999
Ptot max and Ptot peak max lines.
Second breakdown limits.
Region of permissible DC operation.
Extension for repetitive pulse operation.
Extension during turn-on in single
transistor converters provided that
RBE ≤ 100 Ω and tp ≤ 0.6 µs.
Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.
6
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103AU
MECHANICAL DATA
Plastic single-ended package (Philips version of I-PAK); 3 leads (in-line)
SOT533
E
A
A1
E1
D1
mounting
base
D
Q
L
1
2
e1
3
b
c
w M
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
mm
2.38
2.22
0.89
0.71
OUTLINE
VERSION
SOT533
b
c
0.89 0.56
0.71 0.46
D
D1
E
E1
7.28
6.94
1.06
0.96
6.73
6.47
5.36
5.26
e
L
Q
9.8
9.4
1.00
1.10
e1
4.57 2.285
REFERENCES
IEC
JEDEC
EIAJ
TO-251
EUROPEAN
PROJECTION
ISSUE DATE
99-02-18
Fig.19. SOT533 surface mounting package. Pin 2 connected to mounting base.
October 1999
7
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103AU
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1999
8
Rev 1.100