Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf Collector-emitter voltage peak value Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage D.C. current gain Fall time VBE = 0 V 0.25 12.5 46 700 700 400 4 8 50 1.0 60 V V V A A W V PINNING - SOT533 PIN PIN CONFIGURATION base 2 collector 3 emitter ns SYMBOL DESCRIPTION 1 tab Tmb ≤ 25 ˚C IC = 3.0 A;IB = 0.6 A IC = 3.0 A; VCE = 5 V IC = 2.5 A; IB1= 0.4 A c b collector 1 2 Top view 3 e MBK915 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature VBE = 0 V Tmb ≤ 25 ˚C MIN. MAX. UNIT -65 - 700 400 700 4 8 2 4 50 150 150 V V V A A A A W ˚C ˚C TYP. MAX. UNIT - 2.5 K/W 70 - K/W THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Junction to mounting base Rth j-a Junction to ambient October 1999 CONDITIONS in free air 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS ICES,ICBO ICES Collector cut-off current 1 VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C ICEO IEBO VCEOsust Collector cut-off current 1 Emitter cut-off current Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE hFEsat Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VCEO = VCEOMmax (400V) VEB = 7 V; IC = 0 A IB = 0 A; IC = 10 mA; L = 25 mH IC = 3.0 A; IB = 0.6 A IC = 3.0 A; IB = 0.6 A IC = 1 mA; VCE = 5 V IC = 500mA; VCE = 5 V IC = 2.0 A; VCE = 5 V IC = 3.0 A; VCE = 5 V MIN. TYP. MAX. UNIT - - 0.1 0.5 mA mA 400 - 0.1 0.1 - mA mA V 10 13 11 - 0.25 0.97 17 22 16 12.5 1.0 1.5 32 32 22 - V V TYP. MAX. UNIT 0.48 2.7 0.27 0.6 3.3 0.35 µs µs µs 1.2 46 1.4 60 µs ns 1.34 98 1.8 200 µs ns DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ton ts tf PARAMETER CONDITIONS Switching times (resistive load) ICon = 2.5 A; IBon = -IBoff = 0.5 A; RL = 75 ohms; VBB2 = 4V; Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH; -VBB = 5 V ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C 1 Measured with half sine-wave voltage (curve tracer). October 1999 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU ICon 90 % + 50v 100-200R 90 % IC 10 % ts Horizontal ton tf toff Oscilloscope IBon IB Vertical 10 % 300R 1R tr 30ns 6V 30-60 Hz -IBoff Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms with resistive load. VCC IC / mA LC 250 IBon 100 LB T.U.T. 10 0 -VBB min VCE / V VCEOsust Fig.2. Oscilloscope display for VCEOsust. Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V, LC = 200 uH; LB = 1 uH VCC ICon 90 % IC RL VIM 10 % RB 0 T.U.T. ts toff tp IB tf t IBon T t -IBoff Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. October 1999 Fig.6. Switching times waveforms with inductive load. 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor 120 BUJ103AU Normalised Power Derating PD% VCEsat/V 110 2.0 100 90 1.6 80 IC=1A 70 2A 3A 4A 1.2 60 50 0.8 40 30 0.4 20 10 0 0 20 40 60 80 100 Tmb / C 120 0.0 0.01 140 0.10 1.00 10.00 IB/A Fig.7. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) Fig.10. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IB); Tj=25˚C HFE 50 VBEsat/V 1.4 25C 100C 30 IC/IB = 4 1.2 20 15 -40C 10 25C 1 -40C 5 0.8 VCE = 1V 2 0.6 0.01 0.05 0.1 0.5 1 2 3 5 100C 0.1 10 0.2 0.3 0.5 IC/A Fig.8. Typical DC current gain. hFE = f(IC) parameter VCE 1 IC/A 2 3 5 10 Fig.11. Base-Emitter saturation voltage. Solid lines = typ values, VBEsat = f(IC). HFE 50 VCEsat/V 0.8 25C 30 100C 20 0.6 IC/IB = 4 15 -40C 10 100C 0.4 25C 5 VCE = 5V 0.2 2 -40C 0 0.01 0.05 0.1 0.5 1 2 3 5 0.5 10 5 Fig.12. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IC). Fig.9. Typical DC current gain. hFE = f(IC) parameter VCE October 1999 2 IC/A IC/A 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU VCC Zth j-mb / (K/W) 10 D= 0.5 1 LC 0.2 0.1 0.1 VCL(RBSOAR) 0.05 PROBE POINT IBon 0.02 PD tp D= LB tp T 0 T.U.T. -VBB t T 0.01 10us 1ms t/s 0.1s 10ms Fig.13. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Fig.16. Test Circuit for reverse bias safe operating area. Vcl ≤ 700V; Vcc = 150V; VBB = -5V; LB = 1µH; Lc = 200µH ton/toff (ns) 10,000 IC (A) toff 5,000 9 100C 3,000 2,000 8 1,000 500 7 25C ton VBE=-5V 300 200 IC/IB = 5 6 100 1 2 3 4 5 6 IC/A Fig.14. Resistive Switching. ton,toff = f(IC). 5 4 tfi/tsi (ns) 5,000 100C 3 tsi 2,000 1,000 25C 500 2 IC/IB = 5 200 100 1 tfi 50 20 0 0 10 1 2 3 4 5 6 200 300 400 500 600 700 800 900 VCEclamp (V) Fig.17. Reverse bias safe operating area Tj ≤ Tjmax IC/A Fig.15. Inductive switching. ton, toff = f(IC) October 1999 100 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU IC (A) 100 Duty Cycle = 0.01 Icm max tp = 10 20us II Ic max (1) 50us 1 100us 200us (2) 500us I 0.1 DC III 0.01 0.001 1 10 100 1,000 VCEclamp (V) Fig.18. Forward bias safe operating area. Ths ≤ 25 ˚C (1) (2) I II III NB: October 1999 Ptot max and Ptot peak max lines. Second breakdown limits. Region of permissible DC operation. Extension for repetitive pulse operation. Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 µs. Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. 6 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU MECHANICAL DATA Plastic single-ended package (Philips version of I-PAK); 3 leads (in-line) SOT533 E A A1 E1 D1 mounting base D Q L 1 2 e1 3 b c w M e 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 mm 2.38 2.22 0.89 0.71 OUTLINE VERSION SOT533 b c 0.89 0.56 0.71 0.46 D D1 E E1 7.28 6.94 1.06 0.96 6.73 6.47 5.36 5.26 e L Q 9.8 9.4 1.00 1.10 e1 4.57 2.285 REFERENCES IEC JEDEC EIAJ TO-251 EUROPEAN PROJECTION ISSUE DATE 99-02-18 Fig.19. SOT533 surface mounting package. Pin 2 connected to mounting base. October 1999 7 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1999 8 Rev 1.100