Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCEO IC ICM Ptot VCEsat ICsat tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time VBE = 0 V 2.5 150 1000 450 5 10 32 1.5 - V V A A W V A ns PINNING - SOT186A PIN Ths ≤ 25 ˚C PIN CONFIGURATION SYMBOL DESCRIPTION c case 1 base 2 collector 3 emitter b case isolated e 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature VBE = 0 V Ths ≤ 25 ˚C MIN. MAX. UNIT -65 - 1000 450 5 10 2 4 32 150 150 V V A A A A W ˚C ˚C TYP. MAX. UNIT - 3.95 K/W 55 - K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Junction to heatsink with heatsink compound Rth j-a Junction to ambient in free air November 1995 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol R.M.S. isolation voltage from all three terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. - MAX. UNIT 2500 V - 10 - pF MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 450 - 10 - mA V 10 10 18 20 1.5 1.3 35 35 V V TYP. MAX. UNIT 0.6 3.5 0.6 - µs µs µs 1.5 150 - µs ns 1.8 170 - µs ns STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current CONDITIONS 1 VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C Emitter cut-off current VEB = 9 V; IC = 0 A Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 2.5 A; IB = 0.5 A Base-emitter saturation voltage IC = 2.5 A; IB = 0.5 A DC current gain IC = 5 mA; VCE = 5 V IC = 500 mA; VCE = 5 V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS ton ts tf Switching times (resistive load) Turn-on time Turn-off storage time Turn-off fall time ICon = 2.5 A; IBon = -IBoff = 0.5 A Switching times (inductive load) ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH; -VBB = 5 V ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C 1 Measured with half sine-wave voltage (curve tracer). November 1995 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX ICon 90 % + 50v 100-200R 90 % IC 10 % ts Horizontal ton tf toff Oscilloscope IBon IB Vertical 10 % 300R 1R tr 30ns 6V 30-60 Hz -IBoff Fig.4. Switching times waveforms with resistive load. Fig.1. Test circuit for VCEOsust. VCC IC / mA LC 250 200 IBon LB 100 T.U.T. -VBB 0 min VCE / V VCEOsust Fig.2. Oscilloscope display for VCEOsust. Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH VCC ICon 90 % IC RL VIM 10 % RB 0 T.U.T. ts toff tp IB tf t IBon T t -IBoff Fig.6. Switching times waveforms with inductive load. Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. November 1995 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor Normalised Derating % 120 110 BUT11AX 100 with heatsink compound IC / A 100 90 80 70 = 0.01 ICM max 60 10 P tot 50 40 IC max tp = 10 us II 30 20 10 100 us (1) 1 0 0 20 40 60 80 Ths / C 100 120 140 1 ms Fig.7. Normalised power derating and second breakdown curves. 10 ms I 0.1 (2) 500 ms DC 6 IC / A BUT11AX III 0.01 5 1 10 1000 100 VCE / V 4 Fig.10. Forward bias safe operating area. Ths ≤ 25 ˚C 3 (1) (2) I II III 2 1 0 0 400 VCE / V 800 1200 NB: Fig.8. Reverse bias safe operating area. Tj ≤ Tj max 100 h FE Ptot max and Ptot peak max lines. Second breakdown limits. Region of permissible DC operation. Extension for repetitive pulse operation. Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 µs. Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. BUT11AX 5V 1V 10 1 0.01 0.1 1 IC / A 10 100 Fig.9. Typical DC current gain. hFE = f(IC); parameter VCE November 1995 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX Fig.11. Typical base-emitter and collector-emitter saturation voltages. VBEsat = f(IC); VCEsat = f(IC); IC/IB = 5 Fig.12. Collector-emitter saturation voltage. Solid lines = typ values, dotted lines = max values. VCEsat = f(IB); parameter IC November 1995 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX Fig.13. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC Fig.14. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T November 1995 6 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 19 max. max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 3 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 1.3 Fig.15. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1995 7 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 8 Rev 1.100