PHILIPS BUW14

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUW14
GENERAL DESCRIPTION
High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
Ptot
tf
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Fall time
VBE = 0 V
PINNING - SOT82
PIN
TYP.
MAX.
UNIT
0.4
1000
450
0.5
1
20
-
V
V
A
A
W
µs
Tmb ≤ 60 ˚C
PIN CONFIGURATION
SYMBOL
DESCRIPTION
1
emitter
2
collector
3
base
c
b
2
1
e
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Tmb ≤ 60 ˚C
MIN.
MAX.
UNIT
-65
-
1000
450
0.5
1
0.2
0.3
0.3
20
150
150
V
V
A
A
A
A
A
W
˚C
˚C
TYP.
MAX.
UNIT
-
4.5
K/W
100
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
Junction to mounting base
-
Rth j-a
Junction to ambient
in free air
1 Turn-off current.
March 1992
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUW14
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2
ICES
ICES
Collector cut-off current
IEBO
VCEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
VCEsat
VCEsat
VBEsat
hFE
hFE
Collector-emitter saturation voltages
Base-emitter saturation voltage
DC current gain
MIN.
TYP.
MAX.
UNIT
-
-
100
1.0
µA
mA
450
-
1.0
-
mA
V
25
-
V
V
V
50
50
0.8
1.0
1.0
100
TYP.
MAX.
UNIT
20
-
MHz
0.4
3.5
0.4
-
0.7
5.0
1.3
µs
µs
µs
µs
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 5 V; IC = 0 A
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 0.1 A; IB = 10 mA
IC = 0.2 A; IB = 20 mA
IC = 0.2 A; IB = 20 mA
IC = 50 mA; VCE = 5 V
IC = 300 mA; VCE = 5 V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
fT
Transition frequency
IC = 0.2 A; VCE = 10 V; f = 1 MHz
ton
ts
tf
tf
Switching times (resistive load circuit) ICon = 0.2 A; IBon = 20 mA;
-IBoff = 40 mA; VCC = 250 V
Turn-on time
Turn-off storage time
Turn-off fall time
Turn-off fall time
Tmb = 95 ˚C
IC / mA
+ 50v
100-200R
250
Horizontal
200
Oscilloscope
Vertical
300R
30-60 Hz
100
1R
0
6V
VCE / V
min
VCEOsust
Fig.1. Test circuit for VCEOsust.
Fig.2. Oscilloscope display for VCEOsust.
2 Measured with half sine-wave voltage (curve tracer).
March 1992
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUW14
VCC
RL
VIM
hFE
1000
BUW14
5V
100
RB
0
1V
T.U.T.
10
tp
Tj = 25 C
Tj = 125 C
T
1
0.01
ICon
90 %
VCESAT / V
10
BUW14
Tj = 25 C
Tj = 125 C
IC
ts
0.2 A
1
10 %
ton
1
Fig.6. Typical DC current gain. hFE = f(IC)
parameter VCE
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
VCC = 150 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.
90 %
0.1
IC / A
0.1 A
tf
toff
0.1
IBon
IB
IC=0.05 A
10 %
tr
30ns
0.01
0.001
0.01
IB / A
Fig.4. Switching times waveforms with resistive load.
120
Fig.7. Typical collector-emitter saturation voltage.
VCEsat = f(IB); parameter IC
Normalised Power Derating
PD%
1.0
0.1
-IBoff
1
VBESAT / V
110
100
90
0.9
80
0.8
BUW14
Tj = 25 C
Tj = 125 C
70
60
50
0.7
40
0.6
IC=
50 mA
100 mA
200 mA
30
20
10
0.5
0
0
20
40
60
80
100
Tmb / C
120
0.4
140
0
Fig.5. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Tmb)
March 1992
0.04
0.08
0.12
IB / A
0.16
0.2
Fig.8. Typical base-emitter saturation voltage.
VBEsat = f(IB); parameter IC
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUW14
Fig.9. Forward bias safe operating area.
(1) Ptot max line.
(2) Second-breakdown limits.
I Region of permissible DC operation.
II Permissible extension for repetitive pulse
operation.
III Area of permissible operation during turn-on
in single transistor converters, provided
RBE ≤ 100 Ω and tp ≤ 0.6 µs.
IV Repetitive pulse operation in this region is
permissible provided VBE ≤ 0 and tp ≤ 2 ms.
Fig.10. Transient thermal impedance.
Zth j-mb = f(t); parameter δ = duty cycle.
March 1992
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUW14
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.8 g
2.8
2.3
mounting
base
7.8
max
3.75
3.1
2.5
1)
2.54
max
11.1
max
1.2
15.3
min
1
2
3
0.5
4.58
2.29
0.88
max
1) Lead dimensions within this
zone uncontrolled.
Fig.11. SOT82; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT82 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
March 1992
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUW14
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
March 1992
6
Rev 1.000