BUJD105AD NPN power transistor with integrated diode Rev. 01 — 8 May 2009 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package. 1.2 Features and benefits Fast switching Very low switching and conduction losses High voltage capability 1.3 Applications DC-to-DC converters Inverters Electronic lighting ballasts Motor control systems 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit IC collector current - - 8 A Ptot total power dissipation Tmb ≤ 25 °C; see Figure 3 - - 80 W VCESM collector-emitter peak voltage VBE = 0 V - - 700 V VCE = 5 V; IC = 4 A; Tmb = 25 °C; see Figure 6; see Figure 7 8 13.5 - Static characteristics hFE DC current gain BUJD105AD NXP Semiconductors NPN power transistor with integrated diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 B base 2 C collector 3 E emitter mb C mounting base; connected to collector Graphic symbol mb [1] C B E 2 1 sym131 3 SOT428 (SC-63; DPAK) [1] It is not possible to make a connection to pin 2 of the SOT428 (DPAK) package. 3. Ordering information Table 3. Ordering information Type number BUJD105AD Package Name Description Version SC-63; DPAK plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCESM collector-emitter peak voltage VBE = 0 V - 700 V VCBO collector-base voltage IE = 0 A - 700 V VCEO collector-emitter voltage IB = 0 A - 400 V IC collector current - 8 A ICM peak collector current - 16 A IB base current see Figure 1; see Figure 2 - 4 A IBM peak base current - 8 A Ptot total power dissipation - 80 W Tstg storage temperature -65 150 °C Tj junction temperature - 150 °C Tmb ≤ 25 °C; see Figure 3 BUJD105AD_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 8 May 2009 2 of 12 BUJD105AD NXP Semiconductors NPN power transistor with integrated diode VCC LC IBon VBB 001aac049 10 IC (A) VCL(CE) probe point 8 LB DUT 6 001aab999 VBB = −5 V −3 V 4 Fig 1. −1 V Test circuit for reverse bias safe operating area 2 0 0 Fig 2. 200 400 600 800 VCEclamp (V) Reverse bias safe operating area 001aab993 120 Pder (%) 80 40 0 0 40 80 120 160 Tmb (°C) Fig 3. Normalized total power dissipation as a function of mounting base temperature BUJD105AD_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 8 May 2009 3 of 12 BUJD105AD NXP Semiconductors NPN power transistor with integrated diode 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-mb) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from see Figure 4 junction to mounting base - - 1.56 K/W thermal resistance from printed-circuit-board mounted; minimum junction to ambient footprint; see Figure 5 - 75 - K/W 001aab998 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 0.05 0.02 10−1 δ= Ptot tp T 0.01 t tp T 10−2 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse width 7.0 7.0 1.5 2.15 2.5 4.57 001aab021 Fig 5. Minimum footprint SOT428 BUJD105AD_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 8 May 2009 4 of 12 BUJD105AD NXP Semiconductors NPN power transistor with integrated diode 6. Characteristics Table 6. Symbol Characteristics Parameter Conditions Min Typ Max VCE = 5 V; IC = 4 A; Tmb = 25 °C; see Figure 6; see Figure 7 8 13.5 - VCE = 5 V; IC = 1 mA; Tmb = 25 °C 10 17 34 VCE = 5 V; IC = 500 mA; Tmb = 25 °C 13 23 36 Unit Static characteristics DC current gain hFE ICBO collector-base cut-off current IE = 0 A; VCB = 700 V [1] - - 0.2 mA ICEO collector-emitter cut-off IB = 0 A; VCE = 400 V current [1] - - 0.1 mA ICES collector-emitter cut-off VCE = 700 V; VBE = 0 V; Tj = 25 °C current VCE = 700 V; VBE = 0 V; Tj = 125 °C [1] - - 0.2 mA [1] - - 0.5 mA - - 10 mA IEBO emitter-base cut-off current IC = 0 A; VEB = 9 V VBEsat base-emitter saturation IC = 4 A; IB = 0.8 A; see Figure 8 voltage - 1 1.5 V VCEOsus collector-emitter sustaining voltage IB = 0 A; LC = 25 mH; IC = 10 mA; see Figure 9; see Figure 10 400 - - V VCEsat collector-emitter saturation voltage IB = 0.8 A; IC = 4 A; see Figure 11; see Figure 12 - 0.3 1 V VF forward voltage IF = 4 A - 1.07 1.5 V IC = 5 A; IBon = 1 A; VBB = -5 V; LB = 1 µH; inductive load; Tmb = 25 °C; see Figure 13; see Figure 14 - 20 50 ns IC = 5 A; IBon = 1 A; VBB = -5 V; LB = 1 µH; inductive load; Tmb = 100 °C - 25 100 ns IC = 5 A; IBon = 1 A; IBoff = -1 A; RL = 75 Ω; resistive load; Tj = 25 °C; see Figure 15; see Figure 16 - 0.3 0.5 µs Dynamic characteristics fall time tf ton turn-on time IC = 5 A; IBon = 1 A; IBoff = -1 A; RL = 75 Ω; Tj = 25 °C; resistive load - 0.65 1 µs ts storage time IC = 5 A; IBon = 1 A; IBoff = -1 A; RL = 75 Ω; resistive load; Tj = 25 °C - 1.8 2.5 µs IC = 5 A; IBon = 1 A; RL = 75 Ω; inductive load; Tj = 25 °C; LB = 1 µH; VBB = -5 V - 1.2 1.7 µs IC = 5 A; IBon = 1 A; IBoff = -1 A; inductive load; Tj = 100 °C; LB = 1 µH; VBB = -5 V - 1.4 1.9 µs [1] Measured with half sine-wave voltage (curve tracer). BUJD105AD_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 8 May 2009 5 of 12 BUJD105AD NXP Semiconductors NPN power transistor with integrated diode 001aac045 102 Tj = 100 °C 25 °C hFE 1 10−2 Tj = 100 °C 25 °C hFE −40 °C 10 001aac046 102 10 10−1 1 −40 °C 1 10−2 10 10−1 1 IC (A) Fig 6. DC current gain as a function of collector current; typical values Fig 7. DC current gain as a function of collector current; typical values 001aac047 1.3 10 IC (A) 50 V 100 Ω to 200 Ω VBEsat (V) horizontal 1.1 oscilloscope vertical 6V 0.9 Tj = −40 °C 300 Ω 25 °C 1Ω 30 Hz to 60 Hz 001aab987 0.7 100 °C 0.5 10−1 Fig 9. 1 Test circuit for collector-emitter sustaining voltage 10 IC (A) Fig 8. Base-emitter saturation voltage as a function of collector current; typical values BUJD105AD_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 8 May 2009 6 of 12 BUJD105AD NXP Semiconductors NPN power transistor with integrated diode IC (mA) 001aab995 2.0 VCEsat (V) IC = 1 A 2A 3A 4A 1.6 250 1.2 100 0.8 10 0 0.4 min VCEOsus VCE (V) 001aab988 Fig 10. Oscilloscope display for collector-emitter sustaining voltage test waveform 0 10−2 10−1 1 10 IB (A) Fig 11. Collector-emitter saturation voltage as a function of base current; typical values 001aac048 0.6 VCC VCEsat (V) LC IBon VBB 0.4 0.2 Tj = 100 °C 25 °C −40 °C LB DUT 001aab991 Fig 13. Test circuit for inductive load switching 0 10−1 1 10 IC (A) Fig 12. Collector-emitter saturation voltage as a function of collector current; typical values BUJD105AD_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 8 May 2009 7 of 12 BUJD105AD NXP Semiconductors NPN power transistor with integrated diode VCC IC ICon 90 % RL VIM 0 RB DUT tp T 001aab989 10 % t tf IB ts toff Fig 15. Test circuit for resistive load switching IBon t −IBoff 001aab992 Fig 14. Switching times waveforms for inductive load IC ICon 90 % 90 % 10 % t tf ts IB ton toff IBon 10 % t tr ≤ 30 ns −IBoff 001aab990 Fig 16. Switching times waveforms for resistive load BUJD105AD_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 8 May 2009 8 of 12 BUJD105AD NXP Semiconductors NPN power transistor with integrated diode 7. Package outline Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 y E A A A1 b2 E1 mounting base D2 D1 HD 2 L L2 1 L1 3 b1 b w M c A e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D1 D2 min E E1 min e e1 HD L L1 min L2 w y max mm 2.38 2.22 0.93 0.46 0.89 0.71 1.1 0.9 5.46 5.00 0.56 0.20 6.22 5.98 4.0 6.73 6.47 4.45 2.285 4.57 10.4 9.6 2.95 2.55 0.5 0.9 0.5 0.2 0.2 OUTLINE VERSION SOT428 REFERENCES IEC JEDEC JEITA TO-252 SC-63 EUROPEAN PROJECTION ISSUE DATE 06-02-14 06-03-16 Fig 17. Package outline SOT428 (DPAK) BUJD105AD_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 8 May 2009 9 of 12 BUJD105AD NXP Semiconductors NPN power transistor with integrated diode 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUJD105AD_1 20090508 Product data sheet - - BUJD105AD_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 8 May 2009 10 of 12 BUJD105AD NXP Semiconductors NPN power transistor with integrated diode 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BUJD105AD_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 8 May 2009 11 of 12 BUJD105AD NXP Semiconductors NPN power transistor with integrated diode 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 8 May 2009 Document identifier: BUJD105AD_1