BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f VDS PL(AV) Gp ηD ACPR (MHz) (V) (W) (dB) (%) (dBc) 869 to 894 28 40 20 27 −39[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: u Average output power = 40 W u Power gain = 20 dB u Efficiency = 27 % u ACPR = −39 dBc n Easy power control n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (800 MHz to 1000 MHz) n Internally matched for ease of use 1.3 Applications n RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range. BLC6G10-200; BLC6G10LS-200 Philips Semiconductors UHF power LDMOS transistor 2. Pinning information Table 2: Pinning Pin Description Simplified outline Symbol BLC6G10-200 (SOT895-1) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 BLC6G10LS-200 (SOT896-1) 1 drain 2 gate 3 1 1 3 [1] source 2 2 3 sym112 [1] Connected to flange 3. Ordering information Table 3: Ordering information Type number Package Name Description Version BLC6G10-200 - plastic flanged cavity package; 2 mounting slots; 2 leads SOT895-1 plastic earless flanged cavity package; 2 leads SOT896-1 BLC6G10LS-200 - 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - <tbd> A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C BLC6G10-200_6G10LS-200_1 Objective data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 19 April 2006 2 of 9 BLC6G10-200; BLC6G10LS-200 Philips Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 5: Symbol Thermal characteristics Parameter Conditions Type Min Tcase = 80 °C; BLC6G10-200 Rth(j-case) thermal resistance from junction to case PL = 40 W BLC6G10LS-200 Typ Max Unit <tbd> <tbd> <tbd> K/W <tbd> 0.43 0.52 K/W 6. Characteristics Table 6: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 150 mA <tbd> 2 VGSq gate-source quiescent voltage VDS = 28 V; ID = 950 mA <tbd> <tbd> <tbd> V <tbd> V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 40 45 - A IGSS gate leakage current VGS = 13 V; VDS = 0 V - - 450 nA gfs forward transconductance VDS = 10 V; ID = 7.5 A - <tbd> - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5.25 A - <tbd> - Ω Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - <tbd> - pF 7. Application information Table 7: Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 871.5 MHz; f2 = 876.5 MHz; f3 = 886.5 MHz; f4 = 891.5 MHz; RF performance at VDS = 28 V; IDq = 1400 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit Symbol Parameter Conditions Min PL(AV) average output power Gp Typ Max Unit - 40 - W power gain PL(AV) = 40 W 18.5 20 21.5 dB IRL input return loss PL(AV) = 40 W - −6.5 −4.5 dB ηD drain efficiency PL(AV) = 40 W 25 27 - % ACPR adjacent channel power ratio PL(AV) = 40 W - −39 −36 dBc 7.1 Ruggedness in class-AB operation The BLC6G10-200 and BLC6G10LS-200 are capable of withstanding a load mismatch corresponding to VSWR = <tbd> through all phases under the following conditions: VDS = 28 V; IDq = 1400 mA; PL = <tbd>; f = 894 MHz. BLC6G10-200_6G10LS-200_1 Objective data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 19 April 2006 3 of 9 BLC6G10-200; BLC6G10LS-200 Philips Semiconductors UHF power LDMOS transistor 8. Package outline Plastic flanged cavity package; 2 mounting slots; 2 leads SOT895-1 D F A D1 U1 B q C c 1 L H w1 M A M p U2 B M E E1 3 A 2 w2 b 0 5 M C Q M 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b c D D1 E E1 F H L p Q q U1 U2 w1 w2 mm 4.1 3.3 12.83 12.57 0.17 0.14 19.9 19.7 20.42 20.12 9.53 9.27 9.78 9.53 1.14 0.89 19.94 18.92 5.3 4.5 3.38 3.12 1.75 1.50 27.94 34.16 33.91 9.98 9.65 0.25 0.6 1.345 0.392 0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.133 0.069 1.100 1.335 0.380 0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.123 0.059 0.01 0.023 inches OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-06-28 06-02-21 SOT895-1 Fig 1. Package outline SOT895-1 BLC6G10-200_6G10LS-200_1 Objective data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 19 April 2006 4 of 9 BLC6G10-200; BLC6G10LS-200 Philips Semiconductors UHF power LDMOS transistor Plastic earless flanged cavity package; 2 leads SOT896-1 D F A 3 D1 D c U1 1 L H U2 E E1 2 w2 b 0 5 M D Q M 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b c D D1 E E1 F H L Q U1 U2 w2 mm 4.1 3.3 12.83 12.57 0.17 0.14 19.9 19.7 20.42 20.12 9.53 9.27 9.78 9.53 1.14 0.89 19.94 18.92 5.3 4.5 1.75 1.50 20.70 20.45 9.98 9.65 0.6 inches 0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.069 0.815 0.392 0.023 0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.059 0.805 0.380 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-06-28 06-02-21 SOT896-1 Fig 2. Package outline SOT896-1 BLC6G10-200_6G10LS-200_1 Objective data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 19 April 2006 5 of 9 Philips Semiconductors BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor 9. Abbreviations Table 8: Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CDMA Code Division Multiple Access CW Continuous Wave DPCH Dedicated Physical CHannel EDGE Enhanced Data rates for GSM Evolution GSM Global System for Mobile communications LDMOS Laterally Diffused Metal Oxide Semiconductor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access BLC6G10-200_6G10LS-200_1 Objective data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 19 April 2006 6 of 9 BLC6G10-200; BLC6G10LS-200 Philips Semiconductors UHF power LDMOS transistor 10. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Supersedes BLC6G10-200_6G10LS-200_1 20060419 Objective data sheet - - BLC6G10-200_6G10LS-200_1 Objective data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 19 April 2006 7 of 9 Philips Semiconductors BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is for the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] BLC6G10-200_6G10LS-200_1 Objective data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 19 April 2006 8 of 9 Philips Semiconductors BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics. . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Application information. . . . . . . . . . . . . . . . . . . Ruggedness in class-AB operation. . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Legal information. . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information. . . . . . . . . . . . . . . . . . . . . . Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 2 2 2 3 3 3 3 4 6 7 8 8 8 8 8 8 9 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. All rights reserved. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: [email protected]. Date of release: 19 April 2006 Document identifier: BLC6G10-200_6G10LS-200_1