BLF6G20-230PRN Power LDMOS transistor Rev. 01 — 2 December 2008 Objective data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f VDS PL(AV) Gp ηD ACPR (MHz) (V) (W) (dB) (%) (dBc) 1805 to 1880 28 50 16.5 29.5 −35[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 2000 mA: u Average output power = 50 W u Power gain = 16.5 dB (typ) u Efficiency = 29.5 % u ACPR = −35 dBc n Easy power control n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (1800 MHz to 2000 MHz) n Internally matched for ease of use n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF6G20-230PRN NXP Semiconductors Power LDMOS transistor 1.3 Applications n RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description 1 drain1 2 drain2 3 gate1 4 gate2 5 Simplified outline 1 Graphic symbol 1 2 5 3 3 4 5 4 [1] source 2 sym117 [1] Connected to flange 3. Ordering information Table 3. Ordering information Type number Package Na me BLF6G20-230PRN - Description Version flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 65 V VGS gate-source voltage −0.5 +13 V Tstg storage temperature −65 +150 °C Tcase case temperature - 150 °C Tj junction temperature - 225 °C BLF6G20-230PRN_1 Objective data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 2 December 2008 2 of 7 BLF6G20-230PRN NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL(AV) = 50 W 0.38 K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C per section; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 144 mA 1.575 1.9 2.3 V VGSq gate-source quiescent voltage VDS = 32 V; ID = 800 mA 1.725 2.1 2.45 V IDSS drain leakage current VGS = 0 V VDS = 28 V - - 3 µA VDS = 60 V - - 5 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 25 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 300 nA gfs forward transconductance VDS = 10 V; ID = 7.2 A - 10 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5 A - 0.1 0.165 Ω 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1 to 64 PDPCH; f1 = 1802.5 MHz; f2 = 1807.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz; RF performance at VDS = 28 V; IDq = 2000 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit Symbol Parameter Conditions Min Gp RLin Typ power gain PL(AV) = 50 W <tbd> 16.5 <tbd> dB input return loss PL(AV) = 50 W - −10 dB ηD drain efficiency PL(AV) = 50 W <tbd> 29.5 - ACPR adjacent channel power ratio PL(AV) = 50 W - −35 Max <tbd> Unit % <tbd> dBc Table 8. Application information Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1 to 64 PDPCH; f1 = 1872.5 MHz; f2 = 1877.5 MHz; RF performance at VDS = 28 V; IDq = 2000 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PARO output peak-to-average ratio Conditions Min Typ Max Unit PL(AV) = 115 W; at 0.01 % probability on CCDF - 4.3 BLF6G20-230PRN_1 Objective data sheet - dB © NXP B.V. 2008. All rights reserved. Rev. 01 — 2 December 2008 3 of 7 BLF6G20-230PRN NXP Semiconductors Power LDMOS transistor 8. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) A UNIT b c D D1 e E E1 9.50 5.33 11.81 0.15 31.55 31.52 13.72 9.30 3.96 11.56 0.08 30.94 30.96 mm inches 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.73 1.50 16.10 25.27 2.72 Q q 3.30 3.05 2.31 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.374 0.375 0.069 0.674 1.005 0.147 0.130 0.091 0.210 0.465 0.006 1.242 1.241 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.366 0.365 0.059 0.634 0.995 0.107 0.120 0.079 0.156 0.455 0.003 1.218 1.219 1.615 0.395 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-12-28 00-03-03 SOT539A Fig 1. p Package outline SOT539A BLF6G20-230PRN_1 Objective data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 2 December 2008 4 of 7 BLF6G20-230PRN NXP Semiconductors Power LDMOS transistor 9. Abbreviations Table 9. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function DPCH Dedicated Physical CHannel LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency W-CDMA Wideband Code Division Multiple Access 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G20-230PRN_1 20081202 Objective data sheet - - BLF6G20-230PRN_1 Objective data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 2 December 2008 5 of 7 BLF6G20-230PRN NXP Semiconductors Power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF6G20-230PRN_1 Objective data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 2 December 2008 6 of 7 BLF6G20-230PRN NXP Semiconductors Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics. . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Application information. . . . . . . . . . . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Legal information. . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information. . . . . . . . . . . . . . . . . . . . . . Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 1 2 2 2 2 3 3 3 4 5 5 6 6 6 6 6 6 7 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 December 2008 Document identifier: BLF6G20-230PRN_1