BUK75/7610-55AL N-channel TrenchMOS™ standard level FET Rev. 01 — 31 March 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive (GPA) TrenchMOS™ technology specifically optimized for linear operation. 1.2 Features ■ TrenchMOS™ technology ■ 175 °C rated ■ Q101 compliant ■ Stable operation in linear mode. 1.3 Applications ■ Automotive systems ■ Repetitive clamped inductive switching ■ 12 V and 24 V loads. ■ DC linear motor control 1.4 Quick reference data ■ EDS(AL)S ≤ 1.1 J ■ ID ≤ 75 A ■ RDSon = 8.5 mΩ (typ) ■ Ptot ≤ 300 W. 2. Pinning information Table 1: Pinning Pin Description 1 gate (G) 2 drain (D) 3 source (S) mb mounting base; connected to drain (D) Simplified outline Symbol D mb mb G mbb076 2 1 3 SOT404 (D2PAK) 1 2 3 SOT78 (TO-220AB) S BUK75/7610-55AL Philips Semiconductors N-channel TrenchMOS™ standard level FET 3. Ordering information Table 2: Ordering information Type number Package Name Description Version BUK7510-55AL TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 BUK7610-55AL D2PAK Plastic single-ended surface mounted package (D2PAK); 3 leads (one lead SOT404 cropped) 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage (DC) VDGR drain-gate voltage (DC) VGS gate-source voltage (DC) drain current (DC) ID Conditions RGS = 20 kΩ Min Max Unit - 55 V - 55 V - ±20 V Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 [1] [3] - 122 A [2] - 75 A Tmb = 100 °C; VGS = 10 V; Figure 2 [2] - 75 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 490 A Ptot total power dissipation Tmb = 25 °C; Figure 1 - 300 W Tstg storage temperature −55 +175 °C Tj junction temperature −55 +175 °C [1] [3] - 122 A [2] Source-drain diode reverse drain current (DC) IDR peak reverse drain current IDRM Tmb = 25 °C - 75 A Tmb = 25 °C; pulsed; tp ≤ 10 µs - 490 A unclamped inductive load; ID = 75 A; VDS ≤ 55 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C - 1.1 J - [4] - Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy [1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package. [3] Refer to document 9397 750 12572 for further information. [4] a) b) c) d) Max value not quoted. Repetitive rating defined in Figure 16. Single-shot avalanche rating limited by Tj(max) of 175 °C. Repetitive avalanche rating limited by Tj(avg) of 170 °C. Refer to application note AN10273 for further information. 9397 750 14362 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 31 March 2005 2 of 14 BUK75/7610-55AL Philips Semiconductors N-channel TrenchMOS™ standard level FET 03aa16 120 003aaa726 150 Pder (%) ID (A) 80 100 (1) 40 50 0 0 0 50 100 150 Tmb (°C) 200 0 50 100 150 Tmb (°C) 200 VGS ≥ 5 V P tot P der = ----------------------- × 100 % P ° (1) Capped at 75 A due to package. tot ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. 003aaa737 103 Limit RDSon = VDS / ID ID (A) tp = 10 µ s 100 µ s 102 (1) 1 ms DC 10 ms 10 100 ms 1 1 10 VDS (V) 102 Tmb = 25 °C; IDM is single pulse. (1) Capped at 75 A due to package. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 14362 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 31 March 2005 3 of 14 BUK75/7610-55AL Philips Semiconductors N-channel TrenchMOS™ standard level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from junction to mounting base Rth(j-a) thermal resistance from junction to ambient Min Typ Max Unit - - 0.5 K/W SOT78 (TO-220AB) vertical in free air - 60 - K/W SOT404 (D2-PAK) mounted on a printed-circuit board; minimum footprint; vertical in still air - 50 - K/W 5.1 Transient thermal impedance 003aaa734 1 Zth(j-mb) (K/W) δ = 0.5 10-1 0.2 0.1 0.05 0.02 δ= P -2 10 single shot tp T t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 14362 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 31 March 2005 4 of 14 BUK75/7610-55AL Philips Semiconductors N-channel TrenchMOS™ standard level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 55 - - V Tj = −55 °C 50 - - V Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage gate-source threshold voltage drain-source leakage current ID = 250 µA; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 9 and 10 Tj = 25 °C 2 3 4 V Tj = 175 °C 1 - - V Tj = −55 °C - - 4.4 V Tj = 25 °C - 0.05 10 µA Tj = 175 °C - - 500 µA - 2 100 nA Tj = 25 °C - 8.5 10 mΩ Tj = 175 °C - - 20 mΩ - 124 - nC VDS = 55 V; VGS = 0 V IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Figure 6 and 8 Dynamic characteristics Qg(tot) total gate charge Qgs gate-source charge - 22 - nC Qgd gate-drain (Miller) charge - 50 - nC Vplat plateau voltage - 5 - V Ciss input capacitance - 4710 6280 pF Coss output capacitance - 980 1180 pF Crss reverse transfer capacitance - 560 770 pF td(on) turn-on delay time - 33 - ns tr rise time - 117 - ns td(off) turn-off delay time - 132 - ns tf fall time - 95 - ns Ld internal drain inductance from drain lead 6 mm from package to center of die - 4.5 - nH from contact screw on mounting base to center of die - 3.5 - nH from upper edge of drain mounting base to center of die SOT404 - 2.5 - nH from source lead to source bond pad - 7.5 - nH - 0.85 1.2 V - 73 - ns - 430 - nC Ls internal source inductance ID = 25 A; VDD = 44 V; VGS = 10 V; Figure 14 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG = 10 Ω Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 15 trr reverse recovery time Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V; VR = 30 V 9397 750 14362 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 31 March 2005 5 of 14 BUK75/7610-55AL Philips Semiconductors N-channel TrenchMOS™ standard level FET 003aaa729 400 ID (A) RDSon (mΩ) 20 18 300 16 14 12 14 VGS (V) = 10 9.5 9 8.5 8 7.5 7 6.5 6 5.5 5 4.5 200 100 0 0 2 4 6 10 6 8 VDS (V) 10 5 Tj = 25 °C 10 15 VGS (V) 20 Tj = 25 °C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 003aaa731 20 7 RDSon (mΩ) 003aaa730 18 8 9 03ne89 2 10 a 15 1.5 10 1 VGS (V) = 20 5 0.5 0 0 100 200 300 ID (A) 400 Tj = 25 °C 0 -60 60 120 Tj (°C) 180 R DSon a = ----------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 9397 750 14362 Product data sheet 0 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 31 March 2005 6 of 14 BUK75/7610-55AL Philips Semiconductors N-channel TrenchMOS™ standard level FET 03aa32 5 VGS(th) (V) 03aa35 10-1 ID (A) 4 max 10-2 3 typ 10-3 2 min 10-4 min typ max 10-5 1 0 -60 10-6 0 60 120 Tj (°C) 0 180 2 4 VGS (V) 6 Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. 003aaa732 40 gfs (S) Fig 10. Sub-threshold drain current as a function of gate-source voltage. 003aaa738 8000 C (pF) Ciss 35 6000 30 4000 25 2000 Coss C rss 20 0 20 40 60 ID (A) 80 Tj = 25 °C; VDS = 25 V 0 10-1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 750 14362 Product data sheet 1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 31 March 2005 7 of 14 BUK75/7610-55AL Philips Semiconductors N-channel TrenchMOS™ standard level FET 003aaa733 150 003aaa735 10 VGS (V) ID (A) 8 VDD = 14 V 100 VDD = 44 V 6 4 50 2 Tj = 175 °C Tj = 25 °C 0 0 0 2 4 6 8 10 VGS (V) 0 50 100 QG (nC) 150 Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 003aaa736 150 IS (A) 100 Fig 14. Gate-source voltage as a function of gate charge; typical values. 003aaa739 102 (1) IAV (A) (2) Tj = 25 ˚C 10 150 ˚C (3) Tj = 25 °C 50 1 Tj = 175 °C 0 0.0 0.3 0.6 0.9 VSD (V) 1.2 VGS = 0 V 10-1 10-2 10-1 1 tAV (ms) 10 See Table note 4 of Table 3 Limiting values. (1) Single-shot. (2) Single-shot. (3) Repetitive. Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 16. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period. 9397 750 14362 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 31 March 2005 8 of 14 BUK75/7610-55AL Philips Semiconductors N-channel TrenchMOS™ standard level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.6 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 01-02-16 03-01-22 Fig 17. Package outline SOT78 (TO-220AB). 9397 750 14362 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 31 March 2005 9 of 14 BUK75/7610-55AL Philips Semiconductors N-channel TrenchMOS™ standard level FET SOT404 Plastic single-ended surface mounted package (D2PAK); 3 leads (one lead cropped) A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-10-13 05-02-11 SOT404 Fig 18. Package outline SOT404 (D2-PAK). 9397 750 14362 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 31 March 2005 10 of 14 BUK75/7610-55AL Philips Semiconductors N-channel TrenchMOS™ standard level FET 8. Mounting 10.85 10.60 10.50 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.275 8.35 1.50 4.60 0.30 4.85 5.40 7.95 8.075 3.00 0.20 1.20 1.30 1.55 solder lands solder resist 5.08 MSD057 occupied area solder paste Dimensions in mm. Fig 19. Reflow soldering footprint for SOT404. 9397 750 14362 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 31 March 2005 11 of 14 BUK75/7610-55AL Philips Semiconductors N-channel TrenchMOS™ standard level FET 9. Revision history Table 6: Revision history Document ID Release date Data sheet Change status notice BUK75_7610_55AL_1 20050331 Product data sheet - Doc. number Supersedes 9397 750 14362 - 9397 750 14362 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 31 March 2005 12 of 14 BUK75/7610-55AL Philips Semiconductors N-channel TrenchMOS™ standard level FET 10. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 12. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14362 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 31 March 2005 13 of 14 Philips Semiconductors BUK75/7610-55AL N-channel TrenchMOS™ standard level FET 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 31 March 2005 Document number: 9397 750 14362 Published in The Netherlands