PD - 91502C
IRL3705NS/L
Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRL3705NS)
l Low-profile through-hole (IRL3705NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
HEXFET® Power MOSFET
l
D
VDSS = 55V
RDS(on) = 0.01Ω
G
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL3705NL) is available for lowprofile applications.
ID = 89A
S
D 2 P ak
T O -26 2
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
89
63
310
3.8
170
1.1
± 16
340
46
1.7
5.0
-55 to + 175
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
Units
–––
–––
0.90
40
°C/W
5/12/98
IRL3705NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
–––
–––
1.0
50
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Typ.
–––
0.056
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
140
37
78
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.010
VGS = 10V, ID = 46A
0.012
Ω
VGS = 5.0V, ID = 46A
0.018
VGS = 4.0V, ID = 39A
2.0
V
VDS = VGS , ID = 250µA
–––
S
VDS = 25V, ID = 46A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 16V
nA
-100
VGS = -16V
98
ID = 46A
19
nC VDS = 44V
49
VGS = 5.0V, See Fig. 6 and 13
–––
VDD = 28V
–––
ID = 46A
ns
–––
RG = 1.8Ω, VGS = 5.0V
–––
RD = 0.59Ω, See Fig. 10
Between lead,
7.5 –––
nH
and center of die contact
3600 –––
VGS = 0V
870 –––
pF
VDS = 25V
320 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
V SD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 89
showing the
A
G
integral reverse
––– ––– 310
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 46A, VGS = 0V
––– 94 140
ns
TJ = 25°C, IF = 46A
––– 290 440
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 320µH
RG = 25Ω, IAS = 46A. (See Figure 12)
ISD ≤ 46A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,
Uses IRL3705N data and test conditions
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
TJ ≤ 175°C
IRL3705NS/L
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
ID , Drain-to-Source Current (A )
ID , D rain-to-S ource C urrent (A )
100
10
2.5V
2 0µ s P U LS E W ID T H
T J = 2 5°C
1
0.1
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
TOP
1
10
100
2 .5V
10
2 0µ s P U LS E W ID TH
T J = 1 75 °C
1
A
0.1
100
1
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
3.0
R D S (on ) , D rain-to-S ource O n R esistance
(N orm alized)
I D , D ra in -to-S ourc e C urrent (A)
1000
TJ = 2 5 °C
T J = 1 7 5 °C
10
V D S= 2 5 V
2 0 µ s P U L S E W ID T H
1
2.0
3.0
4.0
5.0
6.0
7.0
A
100
V D S , D rain-to-S ource V oltage (V )
V D S , D rain-to-S ource V oltage (V )
100
10
8.0
V G S , G a te -to -S o u rc e V o lta g e (V )
Fig 3. Typical Transfer Characteristics
A
I D = 7 7A
2.5
2.0
1.5
1.0
0.5
V G S = 10 V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL3705NS/L
V GS
C iss
C rs s
C iss C o ss
C , Capacitance (pF)
5000
=
=
=
=
15
0V ,
f = 1MHz
C g s + C g d , C d s S H O R TE D
C gd
C ds + C g d
V G S , G ate-to-S ource V oltage (V )
6000
C oss
2000
C rss
1000
0
10
9
6
3
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
0
A
1
V D S = 44 V
V D S = 28 V
12
4000
3000
I D = 46 A
0
100
V D S , D rain-to-S ourc e V oltage (V )
40
60
80
100
120
A
140
Q G , T otal G ate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R D S (o n)
I D , D rain Current (A )
I S D , Reverse D rain C urrent (A)
20
100
T J = 17 5°C
T J = 2 5°C
10µ s
100
100µ s
1m s
10
10m s
V G S = 0V
10
0.4
0.8
1.2
1.6
2.0
2.4
V S D , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.8
T C = 25 °C
T J = 17 5°C
S ing le P u lse
1
1
A
10
100
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
IRL3705NS/L
100
RD
VDS
LIMITED BY PACKAGE
VGS
80
D.U.T.
I D , Drain Current (A)
RG
+
V
- DD
60
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.01
0.00001
0.10
0.05
0.02
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
IRL3705NS/L
1 5V
D R IV E R
L
VD S
D .U .T
RG
IA S
10V
tp
+
- VD D
A
0.0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
E A S , S ingle Pulse Avalanc he E nergy (m J)
800
TOP
B O TT O M
600
400
200
0
V D D = 25 V
25
50
A
75
100
125
150
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
5.0 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
175
S tarting T J , J unc tion T em perature (°C )
V (B R )D SS
tp
ID
19 A
3 3A
46 A
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRL3705NS/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
-
V DD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRL3705NS/L
D2Pak Package Outline
1 0.54 (.4 15)
1 0.29 (.4 05)
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
1 0.16 (.4 00 )
RE F.
-B -
4.69 (.1 85)
4.20 (.1 65)
6.47 (.2 55 )
6.18 (.2 43 )
3
15 .4 9 (.6 10)
14 .7 3 (.5 80)
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5 .28 (.20 8)
4 .78 (.18 8)
3X
1.40 (.0 55)
1.14 (.0 45)
5 .08 (.20 0)
0.5 5 (.022 )
0.4 6 (.018 )
0 .93 (.03 7 )
3X
0 .69 (.02 7 )
0 .25 (.01 0 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 5 5)
1.1 4 (.0 4 5)
B A M
M IN IM U M R E CO M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO L D ER D IP.
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
LE A D A SS IG N M E N TS
1 - G A TE
2 - D R AIN
3 - S O U RC E
8.89 (.3 50 )
17 .78 (.70 0)
3 .8 1 (.15 0)
2 .08 (.08 2)
2X
Part Marking Information
D2Pak
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A S S E M B LY
LO T C O D E
A
PART NUM BER
F530S
9 24 6
9B
1M
DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK
2.5 4 (.100 )
2X
IRL3705NS/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
IRL3705NS/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IRE CTIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 .60 (.06 3)
1 .50 (.05 9)
1 1 .6 0 (.4 5 7 )
1 1 .4 0 (.4 4 9 )
0 .3 68 (.0 1 4 5 )
0 .3 42 (.0 1 3 5 )
1 5 .4 2 (.6 0 9 )
1 5 .2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
TR L
10 .9 0 (.42 9)
10 .7 0 (.42 1)
1 .75 (.06 9 )
1 .25 (.04 9 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
16 .10 (.63 4 )
15 .90 (.62 6 )
F E E D D IRE C TIO N
13.50 (.532 )
12.80 (.504 )
2 7.4 0 (1.079)
2 3.9 0 (.9 41)
4
33 0.00
(1 4.1 73)
MA X.
NO TES :
1. C O M F O R M S TO E IA -4 18.
2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER .
3. D IM E N S IO N ME A S U R E D @ H U B .
4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E .
60.00 (2.3 62)
MIN .
26 .40 (1.03 9)
24 .40 (.961 )
3
3 0.40 (1.1 97)
MAX.
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
5/98
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/