DISCRETE SEMICONDUCTORS DATA SHEET BFQ252; BFQ252A PNP video transistors Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC05 1997 Oct 02 Philips Semiconductors Product specification PNP video transistors BFQ252; BFQ252A FEATURES DESCRIPTION • High breakdown voltages PNP video transistor in a SOT32 (TO-126) plastic package. NPN complements: BFQ232 and BFQ232A. • Low output capacitance • Optimum temperature profile • Excellent reliability properties. page PINNING APPLICATIONS • Buffer/driver in high-resolution colour graphics monitors. PIN DESCRIPTION 1 emitter 2 collector 3 base 1 Top view 2 3 MBC077 - 1 Fig.1 Simplified outline (SOT32; TO-126). QUICK REFERENCE DATA SYMBOL VCBO VCER PARAMETER collector-base voltage CONDITIONS MIN. TYP. MAX. UNIT open emitter BFQ252 − − −100 V BFQ252A − − −115 V BFQ252 − − −95 V BFQ252A − − −110 V − − −300 mA W collector-emitter voltage RBE = 100 Ω IC collector current (DC) Ptot total power dissipation Ts ≤ 115 °C; note 1 − − 3 hFE DC current gain IC = −50 mA; VCE = −10 V; Tamb = 25 °C 20 30 − fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz; Tamb = 25 °C 1 1.3 − GHz 0.8 1.2 − GHz BFQ252 BFQ252A Note 1. Ts is the temperature at the soldering point of the collector pin. 1997 Oct 02 2 Philips Semiconductors Product specification PNP video transistors BFQ252; BFQ252A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCER PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BFQ252 − −100 V BFQ252A − −115 V BFQ252 − −65 V BFQ252A − −95 V BFQ252 − −95 V BFQ2552A − −110 V − −3 V − −300 mA − 3 W collector-emitter voltage collector-emitter voltage open base RBE = 100 Ω VEBO emitter-base voltage IC collector current (DC) Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C open collector Ts ≤ 115 °C; note 1; see Fig.3 Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Ts ≤ 115 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. 1997 Oct 02 3 VALUE UNIT 20 K/W Philips Semiconductors Product specification PNP video transistors BFQ252; BFQ252A CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BFQ252 −100 − − V BFQ252A −115 − − V BFQ252 −65 − − V BFQ252A −95 − − V BFQ252 −95 − − V BFQ252A −110 − − V IE = −0.1 mA; IC = 0 −3 − − V collector-base breakdown voltage IC = −0.1 mA; IE = 0 collector-emitter breakdown voltage IC = −10 mA; IB = 0 collector-emitter breakdown voltage IC = −10 mA; RBE = 100 Ω V(BR)CER V(BR)EBO emitter-base breakdown voltage ICES collector-emitter cut-off current IB = 0; VCE = −50 V − − −100 µA ICBO collector-base cut-off current IE = 0; VCB = −50 V − − −20 µA hFE DC current gain IC = −50 mA; VCE = −10 V; Tamb = 25 °C; see Fig.4 20 30 − Ccb collector-base capacitance IC = ic = 0; VCB = −10 V; f = 1 MHz; Tamb = 25 °C; see Fig.5 − 2.5 − pF fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz; Tamb = 25 °C; see Fig.6 1 1.3 − GHz 1.2 − GHz BFQ252 BFQ252A 0.8 MBB893 −400 MBB895 4 handbook, halfpage handbook, halfpage IC (mA) Ptot (W) −300 3 −200 2 −100 1 0 0 −20 −40 0 −60 −80 VCEO (V) 0 Fig.2 DC SOAR. 1997 Oct 02 50 100 150 Ts (oC) Fig.3 Power derating curve. 4 200 Philips Semiconductors Product specification PNP video transistors BFQ252; BFQ252A MBB449 50 MBB892 6 handbook, halfpage handbook, halfpage Ccb (pF) hFE 5 40 4 3 30 2 20 0 −100 −200 IC (mA) 1 −300 0 VCE = −10 V; Tamb = 25 °C. Fig.4 Fig.5 MBB448 2.0 handbook, halfpage fT (GHz) 1.5 BFQ252 BFQ252A 0.5 0 −50 −100 IC (mA) −150 VCE = −10 V; f = 100 MHz; Tamb = 25 °C. Fig.6 1997 Oct 02 −20 −30 −40 VCB (V) f = 1 MHz; Tamb = 25 °C. DC current gain as a function of collector current; typical values. 1.0 −10 Transition frequency as a function of collector current; typical values. 5 Collector-base capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification PNP video transistors BFQ252; BFQ252A PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32 E A P1 P D L1 L 1 2 bp 3 e1 c w M e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 L L1(1) max Q P P1 w mm 2.7 2.3 0.88 0.65 0.60 0.45 11.1 10.5 7.8 7.2 4.58 2.29 16.5 15.3 2.54 1.5 0.9 3.2 3.0 3.9 3.6 0.254 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT32 1997 Oct 02 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-04 TO-126 6 Philips Semiconductors Product specification PNP video transistors BFQ252; BFQ252A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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