PHILIPS BFQ540

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BFQ540
NPN wideband dual transistor
Product specification
Supersedes data of 1995 Sep 04
File under Discrete Semiconductors, SC14
1998 Aug 27
Philips Semiconductors
Product specification
NPN wideband dual transistor
BFQ540
FEATURES
DESCRIPTION
• High gain
NPN wideband dual transistor in a
plastic SOT89 package.
• High output voltage
page
• Low noise
• Gold metallization ensures
excellent reliability
• Low thermal resistance.
APPLICATIONS
PINNING
PIN
DESCRIPTION
1
emitter
2
collector
3
base
1
2
3
Bottom view
MBK514
• VHF, UHF and CATV amplifiers.
Marking code: N4.
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
VCES
collector-emitter voltage
RBE = 0
−
−
15
V
VEBO
collector-base voltage
open collector
−
−
2
V
IC
collector current (DC)
−
−
120
mA
Ptot
total power dissipation
−
−
1.2
W
hFE
DC current gain
IC = 40 mA; VCE = 8 V; Tj = 25 °C
60
120
250
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
−
9
−
GHz
insertion power gain
IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
12
13
−
dB
noise figure
IC = 40 mA; VCE = 8 V;
f = 900 MHz; ΓS = Γopt
−
1.9
2.4
dB
S 21
F
2
Ts ≤ 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
1998 Aug 27
2
V
Philips Semiconductors
Product specification
NPN wideband dual transistor
BFQ540
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
15
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
collector current (DC)
−
120
mA
Ptot
total power dissipation
Ts ≤ 60 °C
−
1.2
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
175
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
UNIT
95
K/W
Ts ≤ 60 °C; Ptot = 1.2 W
thermal resistance from junction
to soldering point
MBG241
1.4
Ptot
(W)
1.2
VALUE
MBG244
103
handbook, halfpage
IC
(mA)
1.0
0.8
102
0.6
0.4
0.2
0
0
50
100
150
Tj (oC)
10
200
1
10
VCE ≤ 9 V.
Fig.2 Power derating curve.
1998 Aug 27
Fig.3 SOAR.
3
VCE (V)
102
Philips Semiconductors
Product specification
NPN wideband dual transistor
BFQ540
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)CBO
collector-base breakdown voltage
CONDITIONS
open emitter; IC = 10 µA; IE = 0
MIN.
TYP.
MAX.
UNIT
20
−
−
V
V(BR)CES
collector-emitter breakdown voltage RBE = 0; IC = 40 µA
15
−
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 100 µA; IC = 0
2
−
−
V
ICBO
collector-base leakage current
VCB = 8 V; IE = 0
−
−
50
nA
IEBO
emitter-base leakage current
VCB = 1 V; IC = 0
−
−
200
nA
hFE
DC current gain
IC = 40 mA; VCE = 8 V
60
120
250
fT
transition frequency
IC = 40 mA; VCE = 8 V;
fm = 1 GHz
−
9
−
GHz
Ce
emitter capacitance
IC = ie = 0; VEB = 0.5 V; f = 1 MHz −
2
−
pF
Cre
feedback capacitance
IC = 0; VCE = 8 V; f = 1 MHz
−
0.9
−
pF
insertion power gain
IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
12
13
−
dB
S 21
2
Vo
output voltage
note 1
−
500
−
mV
note 2
−
350
−
mV
d2
second order intermodulation
distortion
note 3
−
−
−53
dB
F
noise figure
IC = 40 mA; VCE = 8 V;
f = 900 MHz; ΓS = Γopt
−
1.9
2.4
dB
Notes
1. dim = −60 dB (DIN45004B); VCE = 8 V; IC = 40 mA; RL = 50 Ω;
Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.5 MHz;
measured at fp + fq − fr = 793.25 MHz.
2. dim = −60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; RL = 50 Ω;
Vp = Vq = Vo; fp = 806 MHz; fq = 810 MHz;
measured at 2fp − fq = 802 MHz.
3. IC = 40 mA; VCE = 8 V; RL = 50 Ω;
Vp = Vq = 225 mV; fp = 250 MHz; fq = 560 MHz;
measured at fp + fq = 810 MHz.
1998 Aug 27
4
Philips Semiconductors
Product specification
NPN wideband dual transistor
BFQ540
MRA688
1.0
MRA689
12
handbook, halfpage
handbook, halfpage
Cre
(pF)
fT
(GHz)
0.8
VCE = 8V
8
0.6
VCE = 4V
0.4
4
0.2
0
0
4
8
VCB (V)
0
10−1
12
10
IC (mA)
102
f = 1 GHz; Tamb = 25 °C.
IC = 0; f = 1 MHz.
Fig.4
1
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
Transition frequency as a function of
collector current; typical values.
MBG243
MBG242
20
20
handbook, halfpage
handbook, halfpage
d2
(dB)
dim
(dB)
30
30
40
40
50
50
60
60
70
70
20
10
30
40
50
10
60
IC (mA)
VCE = 8 V; Vo = 475 mV; RL = 50 Ω.
fp + fq − fr = 793.25 MHz; Tamb = 25 °C.
Fig.6
30
40
50
60
IC (mA)
VCE = 8 V; Vo = 225 mV; RL = 50 Ω; fp + fq = 810 MHz; Tamb = 25 °C.
Intermodulation distortion as a function of
collector current; typical values.
1998 Aug 27
20
Fig.7
5
Second order intermodulation distortion as
a function of collector current; typical values.
Philips Semiconductors
Product specification
NPN wideband dual transistor
BFQ540
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
b3
E
HE
L
1
2
3
c
b2
w M
b1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b1
b2
b3
c
D
E
e
e1
HE
L
min.
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
0.8
0.13
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT89
1998 Aug 27
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
6
Philips Semiconductors
Product specification
NPN wideband dual transistor
BFQ540
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Short-form specification
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Aug 27
7
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© Philips Electronics N.V. 1998
SCA60
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Printed in The Netherlands
125104/00/02/pp8
Date of release: 1998 Aug 27
Document order number:
9397 750 04296