LF PA K PSMN016-100YS N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Rev. 4 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge Improved mechanical and thermal characteristics High efficiency gains in switching power converters LFPAK provides maximum power density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 - - 51 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 117 W Tj junction temperature -55 - 175 °C VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 - - 29.3 mΩ VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 - 12.7 16.3 mΩ Static characteristics RDSon drain-source on-state resistance PSMN016-100YS NXP Semiconductors N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit VGS = 10 V; ID = 30 A; VDS = 50 V; see Figure 14; see Figure 15 - 16 - nC - 54 - nC - - 87 mJ Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness EDS(AL)S non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; avalanche energy ID = 51 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain Graphic symbol mb D G mbb076 S 1 2 3 4 SOT669 (LFPAK; Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN016-100YS LFPAK; Power-SO8 plastic single-ended surface-mounted package; 4 leads SOT669 PSMN016-100YS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 © NXP B.V. 2011. All rights reserved. 2 of 15 PSMN016-100YS NXP Semiconductors N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V VDGR drain-gate voltage Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ - 100 V VGS gate-source voltage ID drain current -20 20 V VGS = 10 V; Tmb = 100 °C; see Figure 1 - 36 A VGS = 10 V; Tmb = 25 °C; see Figure 1 - 51 A - 204 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 117 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C Source-drain diode IS source current Tmb = 25 °C - 51 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 204 A VGS = 10 V; Tj(init) = 25 °C; ID = 51 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω - 87 mJ Avalanche ruggedness non-repetitive drain-source avalanche energy EDS(AL)S 003aad880 60 ID (A) 03aa16 120 Pder (%) 40 80 20 40 0 0 0 Fig 1. 50 100 Continuous drain current as a function of mounting base temperature PSMN016-100YS Product data sheet 0 150 200 Tmb (°C) 50 100 150 200 Tmb (°C) Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 © NXP B.V. 2011. All rights reserved. 3 of 15 PSMN016-100YS NXP Semiconductors N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK 003aad881 103 ID (A) Limit RDSon = V DS / ID 102 tp = 10 μs 100 μs 10 DC 1 1 ms 10 ms 100 ms -1 10 1 102 10 103 VDS (V) Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN016-100YS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 © NXP B.V. 2011. All rights reserved. 4 of 15 PSMN016-100YS NXP Semiconductors N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - 0.54 1.28 K/W 003aad882 1 Zth(j-mb) δ = 0.5 (K/W) 0.2 -1 10 0.1 0.05 0.02 δ= P 10-2 tp T single shot t tp T 10-3 10-6 Fig 4. 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN016-100YS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 © NXP B.V. 2011. All rights reserved. 5 of 15 PSMN016-100YS NXP Semiconductors N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK 6. Characteristics Table 6. Symbol Characteristics Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 90 - - V ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 100 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10 1 - - V ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 11; see Figure 10 2 3 4 V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 - - 4.7 V - - 100 µA IDSS drain leakage current VDS = 100 V; VGS = 0 V; Tj = 125 °C VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.04 2 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 - - 29.3 mΩ VGS = 10 V; ID = 15 A; Tj = 175 °C; see Figure 12 - 28.7 45.6 mΩ VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 - 12.7 16.3 mΩ f = 1 MHz - 0.6 1.5 Ω 42 - nC RDSon RG drain-source on-state resistance internal gate resistance (AC) Dynamic characteristics QG(tot) total gate charge ID = 0 A; VDS = 0 V; VGS = 10 V - 54 - nC gate-source charge ID = 30 A; VDS = 50 V; VGS = 10 V; see Figure 14; see Figure 15 - QGS - 11 - nC QGS(th) pre-threshold gate-source charge ID = 30 A; VDS = 50 V; VGS = 10 V; see Figure 14 - 8 - nC QGS(th-pl) post-threshold gate-source charge - 3.2 - nC QGD gate-drain charge ID = 30 A; VDS = 50 V; VGS = 10 V; see Figure 14; see Figure 15 - 16 - nC VGS(pl) gate-source plateau voltage VDS = 50 V; see Figure 14; see Figure 15 - 4.2 - V Ciss input capacitance - 2744 - pF Coss output capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 16 - 205 - pF Crss reverse transfer capacitance - 135 - pF td(on) turn-on delay time - 19 - ns tr rise time - 24 - ns td(off) turn-off delay time - 47 - ns tf fall time - 21 - ns PSMN016-100YS Product data sheet VDS = 50 V; RL = 1.7 Ω; VGS = 10 V; RG(ext) = 4.7 Ω; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 © NXP B.V. 2011. All rights reserved. 6 of 15 PSMN016-100YS NXP Semiconductors N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit - 0.8 1.2 V Source-drain diode VSD source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; see Figure 17 trr reverse recovery time Qr recovered charge IS = 10 A; dIS/dt = 100 A/µs; VGS = 0 V; VDS = 50 V 003aad887 6000 - 56 - ns - 131 - nC 003aad885 100 gfs (S) C (pF) 75 Ciss 4000 50 Crss 2000 25 0 0 0 Fig 5. 3 6 9 VGS (V) 12 Input and reverse transfer capacitances as a function of gate-source voltage; typical values 0 Fig 6. 003aad888 80 RDSon (mΩ) 10 20 30 40 I D (A) 50 Forward transconductance as a function of drain current; typical values 003aad883 60 10 6 5 4.7 ID (A) 4.5 60 40 40 20 20 VGS (V) = 4 0 0 0 Fig 7. 5 10 15 VGS (V) 20 Drain-source on-state resistance as a function of gate-source voltage; typical values PSMN016-100YS Product data sheet 0 Fig 8. 1 VDS (V) 2 Output characteristics: drain current as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 © NXP B.V. 2011. All rights reserved. 7 of 15 PSMN016-100YS NXP Semiconductors N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK 003aad884 60 003aad280 5 VGS(th) (V) ID (A) 4 max 45 3 typ 30 2 min 15 Tj = 175 °C 1 Tj = 25 °C 0 −60 0 0 Fig 9. 2 4 VGS (V) 6 Transfer characteristics: drain current as a function of gate-source voltage; typical values ID (A) min 10−2 typ 60 120 180 Tj (°C) Fig 10. Gate-source threshold voltage as a function of junction temperature 03aa35 10−1 0 003aad774 3.2 a max 2.4 10−3 1.6 10−4 0.8 10−5 10−6 0 2 4 6 0 -60 VGS (V) Fig 11. Sub-threshold drain current as a function of gate-source voltage PSMN016-100YS Product data sheet 0 60 120 Tj (°C) 180 Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 © NXP B.V. 2011. All rights reserved. 8 of 15 PSMN016-100YS NXP Semiconductors N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK 003aad890 60 RDSon (mΩ) VDS 4.0 ID 50 VGS(pl) VGS (V) = 4.5 40 VGS(th) VGS 30 QGS1 QGS2 QGS 20 QGD QG(tot) 5.0 10 10 0 20 40 I D (A) 60 Fig 13. Drain-source on-state resistance as a function of drain current; typical values 003aad892 10 003aaa508 VGS (V) Fig 14. Gate charge waveform definitions 003aad886 104 C (pF) 8 VDS = 50 V Ciss 6 20 V 103 80 V 4 Coss 2 Crss 2 0 10 0 20 40 QG (nC) 60 Fig 15. Gate-source voltage as a function of gate charge; typical values PSMN016-100YS Product data sheet 10-1 1 10 VDS (V) 102 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 © NXP B.V. 2011. All rights reserved. 9 of 15 PSMN016-100YS NXP Semiconductors N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK 003aad894 50 IS (A) 40 30 20 10 Tj = 175 °C Tj = 25 °C 0 0 0.3 0.6 0.9 VSD (V) 1.2 Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN016-100YS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 © NXP B.V. 2011. All rights reserved. 10 of 15 PSMN016-100YS NXP Semiconductors N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK 7. Package outline Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b 1/2 X c e A (A 3) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 mm c b3 b4 2.2 2.0 0.9 0.7 D (1) c2 D1(1) E(1) E1(1) max 0.25 0.30 4.10 4.20 0.19 0.24 3.80 5.0 4.8 3.3 3.1 e H L L1 L2 w y θ 1.27 6.2 5.8 0.85 0.40 1.3 0.8 1.3 0.8 0.25 0.1 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 06-03-16 11-03-25 MO-235 Fig 18. Package outline SOT669 (LFPAK; Power-SO8) PSMN016-100YS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 © NXP B.V. 2011. All rights reserved. 11 of 15 PSMN016-100YS NXP Semiconductors N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN016-100YS v.4 20110927 Product data sheet - PSMN016-100YS v.3 - PSMN016-100YS v.2 Modifications: PSMN016-100YS v.3 PSMN016-100YS Product data sheet • Various changes to content. 20100330 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 © NXP B.V. 2011. All rights reserved. 12 of 15 PSMN016-100YS NXP Semiconductors N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK 9. Legal information 9.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. PSMN016-100YS Product data sheet Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 © NXP B.V. 2011. All rights reserved. 13 of 15 PSMN016-100YS NXP Semiconductors N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PSMN016-100YS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 © NXP B.V. 2011. All rights reserved. 14 of 15 PSMN016-100YS NXP Semiconductors N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 27 September 2011 Document identifier: PSMN016-100YS