BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ηD ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 869 to 894 28 40 20 28.5 −39[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: Average output power = 40 W Power gain = 20 dB Efficiency = 28.5 % ACPR = −39 dBc Easy power control Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Designed for broadband operation (700 MHz to 1000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multicarrier applications in the 700 MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G10-200RN (SOT502A) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 BLF6G10LS-200RN (SOT502B) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLF6G10-200RN Package Name Description Version - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A earless flanged LDMOST ceramic package; 2 leads SOT502B BLF6G10LS-200RN - 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - 49 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C BLF6G10-200RN_10LS-200RN_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 21 January 2010 2 of 11 BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Type Typ Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL = 40 W BLF6G10-200RN 0.50 K/W BLF6G10LS-200RN 0.35 K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.4 2.0 2.4 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 1620 mA 1.7 2.2 2.7 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 4.2 μA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 40 48 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 420 nA gfs forward transconductance VDS = 10 V; ID = 9.45 A 11 18 26 S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 9.45 A 0.012 0.07 0.093 Ω Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - - 3 pF 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 871.5 MHz; f2 = 876.5 MHz; f3 = 886.5 MHz; f4 = 891.5 MHz; RF performance at VDS = 28 V; IDq = 1400 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PL(AV) average output power Conditions Gp power gain IRL input return loss Min Typ Max Unit - 40 - W PL(AV) = 40 W 19 20 - dB PL(AV) = 40 W - −6.4 −4.5 dB - % ηD drain efficiency PL(AV) = 40 W 25 28.5 ACPR adjacent channel power ratio PL(AV) = 40 W - −39.4 −36 dBc 7.1 Ruggedness in class-AB operation The BLF6G10-200RN and BLF6G10LS-200RN are enhanced rugged devices and are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1400 mA; PL = 200 W; f = 894 MHz. BLF6G10-200RN_10LS-200RN_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 21 January 2010 3 of 11 BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor 7.2 One-tone CW 001aaj415 21 60 Gp Gp (dB) ηD (%) 19 40 ηD 17 20 15 0 40 80 120 0 160 200 PL (W) VDS = 28 V; IDq = 1400 mA; f = 881 MHz. Fig 1. One-tone CW power gain and drain efficiency as function of load power; typical values 7.3 Two-tone CW 001aaj416 21 60 Gp Gp (dB) ηD (%) 001aah520 −20 IMD (dBc) −30 19 IMD3 40 ηD −40 IMD5 17 20 IMD7 −50 15 0 120 0 360 240 −60 0 PL(PEP) (W) Two-tone CW power gain and drain efficiency as function of peak envelope load power; typical values 180 VDS = 28 V; IDq = 1400 mA; f = 881 MHz (±100 kHz). Fig 3. Two-tone CW intermodulation distortion as a function of peak envelope load power; typical values BLF6G10-200RN_10LS-200RN_2 Product data sheet 120 PL(PEP) (W) VDS = 28 V; IDq = 1400 mA; f = 881 MHz (±100 kHz). Fig 2. 60 © NXP B.V. 2010. All rights reserved. Rev. 02 — 21 January 2010 4 of 11 BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor 7.4 2-carrier W-CDMA 001aaj417 22 IMD3, ACPR (dBc) ηD (%) Gp (dB) 21 001aah522 −35 40 −40 30 IMD3 20 Gp ηD 19 18 0 20 40 20 −45 10 −50 0 −55 60 ACPR 0 20 40 PL(AV) (W) VDS = 28 V; IDq = 1400 mA; f = 881 MHz (±5 MHz); carrier spacing 10 MHz. Fig 4. 60 PL(AV) (W) VDS = 28 V; IDq = 1400 mA; f = 881 MHz (±5 MHz); carrier spacing 10 MHz. 2-carrier W-CDMA power gain and drain efficiency as function of average load power; typical values Fig 5. 2-carrier W-CDMA adjacent channel power ratio and third order intermodulation distortion as function of average load power; typical values 8. Test information VGG VDD R1 C7 C3 C8 C11 C13 C17 R3 L1 R2 C5 input 50 Ω C1 C16 output 50 Ω C6 C15 C2 C9 C10 C12 C14 C18 001aah523 The drawing is not to scale. Fig 6. Test circuit for operation at 800 MHz BLF6G10-200RN_10LS-200RN_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 21 January 2010 5 of 11 BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor C7 C8 R1 R3 C11 C13 C3 Q1 L1 C17 R2 C5 C16 C1 C6 C2 C15 C12 C14 C18 C9 C10 NXP IN 800 -1000 MHz V1.0 NXP OUT 800 -1000 MHz V1.0 001aah524 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. The drawing is not to scale. Fig 7. Component layout Table 8. List of components See Figure 6 and Figure 7. Component Description Value C1, C3, C11, C12, C16 multilayer ceramic chip capacitor C2 multilayer ceramic chip capacitor Remarks 68 pF [1] solder vertically 13 pF [1] solder vertically [1] C5, C6 multilayer ceramic chip capacitor 10 pF C7, C8, C9, C10 electrolytic capacitor 220 nF C13, C14 multilayer ceramic chip capacitor 4.7 μF; 50 V [2] C15 multilayer ceramic chip capacitor 1.5 pF [1] C17, C18 electrolytic capacitor 220 μF; 63 V L1 ferrite SMD bead - Q1 BLF6G10LS-200RN - R1, R2, R3 SMD resistor 9.1 Ω; 0.1 W [1] American Technical Ceramics type 100B or capacitor of same quality. [2] TDK or capacitor of same quality. BLF6G10-200RN_10LS-200RN_2 Product data sheet solder vertically Vishay VJ1206Y224KXB solder vertically Ferroxcube BDS 3/3/4.6-4S2 or equivalent © NXP B.V. 2010. All rights reserved. Rev. 02 — 21 January 2010 6 of 11 BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 8. EUROPEAN PROJECTION Package outline SOT502A BLF6G10-200RN_10LS-200RN_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 21 January 2010 7 of 11 BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 9. 0.390 0.010 0.380 Package outline SOT502B BLF6G10-200RN_10LS-200RN_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 21 January 2010 8 of 11 BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 9. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CDMA Code Division Multiple Access CW Continuous Wave DPCH Dedicated Physical CHannel EDGE Enhanced Data rates for GSM Evolution GSM Global System for Mobile communications LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G10-200RN_10LS-200RN_2 20100121 Modifications • • • • Product data sheet - Section 1.1 “General description” lower frequency range changed to 700 MHz. Section 1.2 “Features” lower frequency range changed to 700 MHz. Section 1.3 “Applications” lower frequency range changed to 700 MHz. Section 12 “Legal information” export control disclaimer added. BLF6G10-200RN_10LS-200RN_1 20090119 Product data sheet - BLF6G10-200RN_10LS-200RN_2 Product data sheet BLF6G10-200RN_10LS-200RN_1 - © NXP B.V. 2010. All rights reserved. Rev. 02 — 21 January 2010 9 of 11 BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF6G10-200RN_10LS-200RN_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 21 January 2010 10 of 11 NXP Semiconductors BLF6G10(LS)-200RN Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 21 January 2010 Document identifier: BLF6G10-200RN_10LS-200RN_2