DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT61 UHF power transistor Preliminary specification Supersedes data of 1996 Feb 05 1998 Jan 28 Philips Semiconductors Preliminary specification UHF power transistor BLT61 PINNING FEATURES • High efficiency PIN • High gain DESCRIPTION 1, 8 • Internal pre-matched input base 2, 4, 5, 7 • Low supply voltage. emitter 3, 6 collector APPLICATIONS • Hand-held radio equipment in common emitter class-AB operation for 900 MHz communication systems. k, halfpage 8 5 1 4 DESCRIPTION NPN silicon planar epitaxial power transistor encapsulated in a SOT96-1(SO8) package. Top view MBK187 Fig.1 Simplified outline (SOT96-1; SO8). QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) 900 3.6 1.2 ≥10 ≥50 typ. 11.5 typ. 63 CW, class-AB LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 14 V VCEO collector-emitter voltage open base − 7 V VEBO emitter-base voltage open collector − 3 V IC collector current − 0.8 A Ptot total power dissipation Ts = 60 °C; note 1 − 4 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector pin. 1998 Jan 28 2 Philips Semiconductors Preliminary specification UHF power transistor BLT61 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS MAX. UNIT thermal resistance from junction to soldering point Ptot = 4 W; Ts = 60 °C; note 1 29 K/W MAX. UNIT Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS open emitter; IC = 5 mA MIN. 14 − V(BR)CBO collector-base breakdown voltage V V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA 7 − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 1 mA 3 − V ICES collector leakage current VBE = 0; VCE = 5 V − 0.01 mA 45 hFE DC current gain IC = 0.2 A; VCE = 5 V Cc collector capacitance IE = ie = 0; VCB = 3.6 V; f = 1 MHz − tbf pF Cre feedback capacitance IC = 0; VCE = 3.6 V; f = 1 MHz − tbf pF MGM488 1 handbook, halfpage IC (A) 10−1 1 VCE (V) 10 Ts = 115 °C. Fig.2 DC SOAR. 1998 Jan 28 3 130 Philips Semiconductors Preliminary specification UHF power transistor BLT61 APPLICATION INFORMATION RF performance at Ts ≤ 60 °C in a common-emitter test circuit. MODE OF OPERATION CW, class-AB f (MHz) VCE (V) ICQ (mA) PL (W) Gp (dB) ηC (%) 900 3.6 0.1 1.2 ≥10 ≥50 typ. 11.5 typ. 63 Ruggedness in class-AB operation The BLT61 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases at f = 900 MHz; VCE = 5 V; ICQ = 0.1 mA; PL = 1.45 W; and Ts = 60 °C. MGM489 16 handbook, halfpage ηC (%) Gp (dB) PL (W) 60 1.2 8 40 0.8 4 20 0.4 12 MGM490 1.6 80 handbook, halfpage Gp ηC 0 0 0.4 0.8 1.2 PL (W) 0 0 1.6 0 Power gain and collector efficiency as a function of load power; typical values. 1998 Jan 28 80 120 160 200 PD (mW) f = 900 MHz; VCE = 3.6 V; ICQ = 0.1 mA. f = 900 MHz; VCE = 3.6 V; ICQ = 0.1 mA; tuned at PL = 1.2 W. Fig.3 40 Fig.4 4 Load power as a function of drive power; typical values. Philips Semiconductors Preliminary specification UHF power transistor BLT61 PACKAGE OUTLINE SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.014 0.0075 0.20 0.19 0.16 0.15 0.244 0.039 0.028 0.050 0.041 0.228 0.016 0.024 inches 0.010 0.057 0.069 0.004 0.049 0.01 0.01 0.028 0.004 0.012 θ Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT96-1 076E03S MS-012AA 1998 Jan 28 EIAJ EUROPEAN PROJECTION ISSUE DATE 95-02-04 97-05-22 5 o 8 0o Philips Semiconductors Preliminary specification UHF power transistor BLT61 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Jan 28 6 Philips Semiconductors Preliminary specification UHF power transistor BLT61 NOTES 1998 Jan 28 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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