4M × 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE HYM 324000GD-50/-60 Preliminary Information • 4 0194 034 words by 32-bit organization • Fast access and cycle time 50 ns access time 95 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) • Fast page mode capability with 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) • Single + 3.3 V (± 0.3 V) supply • Low power dissipation max. 1008 mW active (-50 version) max. 864 mW active (-60 version) LVCMOS – 1.8 mW standby TTL – 14.4 mW standby • CAS-before-RAS refresh, RAS-only-refresh. Self Refresh • 2 decoupling capacitors mounted on substrate • All inputs, outputs and clock fully TTL compatible • 72 pin, dual read-out, one bank, Small Outline DIMM Module • Utilizes two 4M × 16 -DRAMs (HYB 3165160T) • 4096 refresh cycles / 64 ms • Gold contact pad Semiconductor Group 181 11.94 HYM324000GD-50/-60 4M x 32 SO-DIMM The HYM 324000GD -50/-60 is a 16 MByte DRAM module organized as 4 194 304 words by 32-bit in a 72-pin, dual read-out, small outline package comprising two HYB 3165160T 4M × 16 DRAMs in 500 mil wide TSOPII-54 - packages mounted together with two 0.2 µF ceramic decoupling capacitors on a PC board. Each HYB 3165160T is described in the data sheet and is fully electrically tested and processed according to Siemens standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The density and speed of the module can be detected by the use of presence detect pins. These modules are ideal for portable systems applications where high memory capacity is needed. Ordering Information Type Ordering Code Package Descriptions HYM 324000GD -50 on request L-DIM-72-1 50 ns DRAM module HYM 324000GD -60 on request L-DIM-72-1 60 ns DRAM module Pin Names A0-A11 A0-A9 DQ0 - DQ31 RAS0, RAS2 CAS0 - CAS3 WE Vcc Vss PD1 - PD7 N.C. Row Address Input Column Address Inputs Data Input/Output Row Address Strobe Column Address Strobe Read / Write Input Power (+3.3 Volt) Ground Presence Detect Pins No Connection Presence-Detect and ID-pin Thruth Table *): Module PD1 PD2 PD3 PD4 PD5 PD6 PD7 HYM 324000GD -50 NC NC VSS NC VSS VSS NC HYM 324000GD -60 NC NC VSS NC NC NC NC note: PD1 .. PD4 : configuration PD5 .. PD6 : speed PD7 : refresh mode (NC = normal refresh) *) according to JEDEC letter ballot JC-42.5-95 Item #646/651 Semiconductor Group 182 HYM324000GD-50/-60 4M x 32 SO-DIMM Pin Configuration PIN Name PIN NAME PIN NAME PIN NAME 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 VSS DQ1 DQ3 DQ5 DQ7 PD1 A1 A3 A5 A10 DQ8 DQ10 DQ12 DQ14 A11 A8 NC DQ15 37 39 41 43 45 47 49 51 53 55 57 59 61 63 65 67 69 71 DQ16 VSS CAS2 CAS1 NC WRITE DQ18 DQ20 DQ22 NC DQ25 DQ28 VCC DQ30 NC PD3 PD5 PD7 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 DQ0 DQ2 DQ4 DQ6 VCC A0 A2 A4 A6 NC DQ9 DQ11 DQ13 A7 VCC A9 RAS2 NC 38 40 42 44 46 48 50 52 54 56 58 60 62 64 66 68 70 72 DQ17 CAS0 CAS3 RAS0 NC NC DQ19 DQ21 DQ23 DQ24 DQ26 DQ27 DQ29 DQ31 PD2 PD4 PD6 VSS Front Side RAS CAS0 UCAS CAS1 LCAS Pin72 Pin71 I/O1-I/O8 DQ0-DQ7 I/O9-I/O16 DQ8-DQ15 OE D1 RAS2 RAS CAS2 UCAS CAS3 LCAS I/O1-I/O8 DQ16-DQ23 I/O9-I/O16 DQ24-DQ31 OE D2 D1,D2 D1,D2 C1,C2 D1,D2 Block Diagram VSS Semiconductor Group Pin1 Back Side RAS0 WE A0-A11 VCC Pin2 183 HYM324000GD-50/-60 4M x 32 SO-DIMM Absolute Maximum Ratings 1) Operating temperature range..............................................................................................0 to 70 ˚C Storage temperature range.........................................................................................– 55 to 150 ˚C Soldering temperature.............................................................................................................260 ˚C Soldering time..............................................................................................................................10 s Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V Power supply voltage....................................................................................................-0.5V to 4.6 V Power dissipation......................................................................................................................1.0 W Data out current (short circuit)..................................................................................................50 mA DC Characteristics TA = 0 to 70 ˚C, VSS = 0 V, VCC = 3 V ± 0.3 V Parameter Symbol Limit Values min. max. Unit Note Input high voltage VIH 2.0 Vcc+0.3 V 2) Input low voltage VIL – 0.3 0.8 V 2) Output high voltage (LVTTL) Output „H“ level voltage (Iout = -2mA) VOH 2.4 – V Output low voltage (LVTTL) Output „L“level voltage (Iout = +2mA) VOL – 0.4 V Output high voltage (LVCMOS) Output „H“ level voltage (Iout = -100uA) VOH Vcc-0.2 - V 6) Ouput low voltage (LVCMOS) Output „L“ level voltage (Iout = +100uA) VOL - 0.2 V 6) Input leakage current,any input II(L) – 10 10 µA IO(L) – 10 10 µA – – 280 240 mA mA 3) 4) 5) ICC2 – 4 mA – ICC3 Average Vcc supply current, during RAS-only refresh cycles: -50 ns version -60 ns version – – 280 240 mA mA 3) 5) (0 V < Vin < Vcc , all other pins = 0 V Output leakage current (DO is disabled, 0 V < Vout < Vcc ) Average Vcc supply current: ICC1 -50 ns version -60 ns version (RAS, CAS, address cycling: tRC = tRC min.) Standby Vcc supply current (RAS=CAS= Vih) (RAS cycling: CAS = VIH: tRC = tRC min.) Semiconductor Group 184 HYM324000GD-50/-60 4M x 32 SO-DIMM DC Characteristics (cont’d) TA = 0 to 70 ˚C, VSS = 0 V, VCC = 3 V ± 0.3 V Parameter Symbol Limit Values Unit Note min. max. – – 170 150 mA mA 3) 4) 5) ICC5 – 400 A – Average Vcc supply current, during CAS-before- ICC6 RAS refresh mode: -50 ns version -60 ns version – – 280 240 mA mA 3) 4) – 400 A Average Vcc supply current, during fast page mode: ICC4 -50 ns version -60 ns version (RAS = VIL, CAS, address cycling: tPC=tPC min.) Standby Vcc supply current (RAS=CAS= Vcc-0.2V) (RAS, CAS cycling: tRC = tRC min.) ICC7 Self Refresh Current Average Power Supply Current during Self Refresh. (CBR cycle with tRAS>TRASSmin, CAS held low, WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V) Semiconductor Group 185 HYM324000GD-50/-60 4M x 32 SO-DIMM SO-DIMM PACKAGE OUTLINES 56.69 2.6 max 17.78 25.40 FRONT SIDE 1 E 71 44.45 7.62 R 2.0 1.0 +/- 0.1 8.255 2 72 R 2.0 BACK SIDE 1.0 note: mechanical key for supply voltage 5 V E = 6.35 3.3V E = 3.175 1.27 Preliminary Drawing L-DIM-72-1 Semiconductor Group 186