INFINEON HYM328020GD-

8M × 32-Bit Dynamic RAM Module
SMALL OUTLINE MEMORY MODULE
HYM 328020GD-50/-60
Preliminary Information
•
8 388 608 words by 32-bit organization
•
Fast access and cycle time
50 ns access time
95 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
•
Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
•
Single + 3.3 V (± 0.3 V) supply
•
Low power dissipation
max. 2016 mW active (-50 version)
max. 1728 mW active (-60 version)
LVCMOS– 3.6 mW standby
LVTTL – 28.8 mW standby
•
CAS-before-RAS refresh, RAS-only-refresh, Self Refresh
•
4 decoupling capacitors mounted on substrate
•
All inputs, outputs and clock fully TTL compatible
•
72 pin, dual read-out, two bank, Small Outline DIMM Module
•
Utilizes four 4M × 16 -DRAMs (HYB 3165160T)
•
4096 refresh cycles / 64 ms
•
Gold contact pad
Semiconductor Group
195
11.94
HYM328020GD-50/-60
8M x 32 SO-DIMM
The HYM 328020GD -50/-60 is a 32 MByte DRAM module organized as 8 388 608 words by 32-bit
in a 72-pin, dual read-out, small outline package comprising four HYB 3165160T 4M × 16 DRAMs
in 500 mil wide TSOPII-54 - packages mounted together with four 0.2 µF ceramic decoupling
capacitors on a PC board. Each HYB 3165800T is described in the data sheet and is fully
electrically tested and processed according to Siemens standard quality procedure prior to module
assembly. After assembly onto the board, a further set of electrical tests is performed.
The density and speed of the module can be detected by the use of presence detect pins.
These modules are ideal for portable systems applications where high memory capacity is needed.
Ordering Information
Type
Ordering Code
Package
Descriptions
HYM 328020GD -50
on request
L-DIM-72-2
50 ns DRAM module
HYM 328020GD -60
on request
L-DIM-72-2
60 ns DRAM module
Pin Names
A0-A11
A0-A9
DQ0 - DQ31
RAS0 - RAS3
CAS0 - CAS3
WE
Vcc
Vss
PD1 - PD7
N.C.
Row Address Input
Column Address Inputs
Data Input/Output
Row Address Strobe
Column Address Strobe
Read / Write Input
Power (+3.3 Volt)
Ground
Presence Detect Pins
No Connection
Presence-Detect and ID-pin Thruth Table *):
Module
PD1
PD2
PD3
PD4
PD5
PD6
PD7
HYM 328020GD -50
NC
NC
VSS
VSS
VSS
VSS
NC
HYM 328020GD -60
NC
NC
VSS
VSS
NC
NC
NC
note: PD1 .. PD4 : configuration
PD5 .. PD6 : speed
PD7
: refresh mode (NC = normal refresh)
*) according to JEDEC letter ballot JC-42.5-95 Item #646/651
Semiconductor Group
196
HYM328020GD-50/-60
8M x 32 SO-DIMM
Pin Configuration
PIN
Name
PIN
NAME
PIN
NAME
PIN
NAME
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
VSS
DQ1
DQ3
DQ5
DQ7
PD1
A1
A3
A5
A10
DQ8
DQ10
DQ12
DQ14
A11
A8
RAS3
DQ15
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
DQ16
VSS
CAS2
CAS1
RAS1
WRITE
DQ18
DQ20
DQ22
NC
DQ25
DQ28
VCC
DQ30
NC
PD3
PD5
PD7
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
DQ0
DQ2
DQ4
DQ6
VCC
A0
A2
A4
A6
NC
DQ9
DQ11
DQ13
A7
VCC
A9
RAS2
NC
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
DQ17
CAS0
CAS3
RAS0
NC
NC
DQ19
DQ21
DQ23
DQ24
DQ26
DQ27
DQ29
DQ31
PD2
PD4
PD6
VSS
Front Side
RAS0
RAS
CAS0
UCAS
CAS1
RAS2
RAS
CAS2
UCAS
CAS3
DQ0-DQ7
I/O1-I/O8
I/O9-I/O16
I/O1-I/O8
DQ8-DQ15
I/O9-I/O16
D1
WE
A0-A11
VCC
Pin71
I/O9-I/O16
RAS1
UCAS
CAS0
LCAS
CAS1
I/O1-I/O8
RAS
RAS3
UCAS
CAS2
LCAS
CAS3
DQ24-DQ31
I/O9-I/O16
D2
RAS
OE
DQ16-DQ23
I/O1-I/O8
D4
OE
D1 - D4
D1 - D4
C1 - C4
D1 - D4
Block Diagram
VSS
Semiconductor Group
Pin72
D3
LCAS
OE
Pin1
Back Side
LCAS
OE
Pin2
197
HYM328020GD-50/-60
8M x 32 SO-DIMM
Absolute Maximum Ratings 1)
Operating temperature range..............................................................................................0 to 70 ˚C
Storage temperature range.........................................................................................– 55 to 150 ˚C
Soldering temperature.............................................................................................................260 ˚C
Soldering time..............................................................................................................................10 s
Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................-0.5V to 4.6 V
Power dissipation......................................................................................................................1.0 W
Data out current (short circuit)..................................................................................................50 mA
DC Characteristics
TA = 0 to 70 ˚C, VSS = 0 V, VCC = 3 V ± 0.3 V
Parameter
Symbol
Limit Values
min.
max.
Unit Note
Input high voltage
VIH
2.0
Vcc+0.3
V
2)
Input low voltage
VIL
– 0.3
0.8
V
2)
Output high voltage (LVTTL)
Output „H“ level voltage (Iout = -2mA)
VOH
2.4
–
V
Output low voltage (LVTTL)
Output „L“level voltage (Iout = +2mA)
VOL
–
0.4
V
Output high voltage (LVCMOS)
Output „H“ level voltage (Iout = -100uA)
VOH
Vcc-0.2 -
V
6)
Ouput low voltage (LVCMOS)
Output „L“ level voltage (Iout = +100uA)
VOL
-
0.2
V
6)
Input leakage current,any input
II(L)
– 10
10
µA
IO(L)
– 10
10
µA
–
–
560
480
mA
mA
3) 4) 5)
ICC2
–
8
mA
–
ICC3
Average Vcc supply current, during RAS-only
refresh cycles:
-50 ns version
-60 ns version
–
–
560
480
mA
mA
3) 5)
(0 V < Vin < Vcc , all other pins = 0 V
Output leakage current
(DO is disabled, 0 V < Vout < Vcc )
Average Vcc supply current:
ICC1
-50 ns version
-60 ns version
(RAS, CAS, address cycling: tRC = tRC min.)
Standby Vcc supply current
(RAS=CAS= Vih)
(RAS cycling: CAS = VIH: tRC = tRC min.)
Semiconductor Group
198
HYM328020GD-50/-60
8M x 32 SO-DIMM
DC Characteristics (cont’d)
TA = 0 to 70 ˚C, VSS = 0 V, VCC = 3 V ± 0.3 V
Parameter
Symbol
Limit Values
Unit Note
min.
max.
–
–
340
300
mA
mA
3) 4) 5)
ICC5
–
800
A
–
Average Vcc supply current, during CAS-before- ICC6
RAS refresh mode:
-50 ns version
-60 ns version
–
–
560
480
mA
mA
3) 4)
–
800
A
Average Vcc supply current,
during fast page mode:
ICC4
-50 ns version
-60 ns version
(RAS = VIL, CAS, address cycling: tPC=tPC min.)
Standby Vcc supply current
(RAS=CAS= Vcc-0.2V)
(RAS, CAS cycling: tRC = tRC min.)
ICC7
Self Refresh Current
Average Power Supply Current during Self Refresh.
(CBR cycle with tRAS>TRASSmin, CAS held low,
WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
Semiconductor Group
199
HYM328020GD-50/-60
8M x 32 SO-DIMM
SO-DIMM PACKAGE OUTLINES
56.69
3.81
25.40
17.78
FRONT SIDE
1
71
E
44.45
7.62
R 2.0
1.0 +/- 0.1
8.255
2
72
R 2.0
BACK SIDE
1.0
note:
mechanical key for supply voltage
5 V E = 6.35
3.3V E = 3.175
1.27
Preliminary Drawing
Semiconductor Group
200