INFINEON SIGC54T60R3_05

SIGC54T60R3
3
IGBT Chip
FEATURES:
• 600V Trench & Field Stop technology
• low VCE(sat)
• low turn-off losses
• short tail current
• positive temperature coefficient
• easy paralleling
Chip Type
SIGC54T60R3
VCE
ICn
600V
100A
This chip is used for:
• power module
C
Applications:
• drives
G
Die Size
Package
5.97 x 8.97 mm2
sawn on foil
E
Ordering Code
Q67050A4341-A101
MECHANICAL PARAMETER:
Raster size
5.97 x 8.97
( 2.489 x 1.767 ) x 4
( 2.789 x 1.995 ) x 4
mm
2
53.6 / 40
mm
2
Thickness
70
µm
Wafer size
150
mm
Flat position
90
deg
Emitter pad size
Gate pad size
Area total / active
Max. possible chips per wafer
1.615 x 0.817
245 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm AlSiCu
Collector metallization
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD CLS, L7581A, Edition 2, 27.01.2005
SIGC54T60R3
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
600
V
1)
A
Collector-emitter voltage, Tj= 25 °C
VC E
DC collector current, limited by Tjmax
IC
Pulsed collector current, tp limited by Tjmax
Icpuls
300
A
Gate emitter voltage
V GE
±20
V
Operating junction and storage temperature
Tj, Ts t g
-40 ... +175
°C
SC data, VGE = 15V, VCC = 360V
1)
Tvj = 150°C
Tvj = 25°C
6
tp
µs
8
depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified
Parameter
Symbol
Value
Conditions
min.
Unit
typ.
max.
Collector-emitter breakdown voltage
V(BR)CES
VGE=0V , IC= 4mA
600
Collector-emitter saturation voltage
VCE(sat)
VGE=15V, IC =100A
1.05
1.45
1.85
Gate-emitter threshold voltage
VGE(th)
IC =1600µA , VGE=VCE
5.0
5.8
6.5
Zero gate voltage collector current
ICES
VCE=600V , VGE=0V
5.1
µA
Gate-emitter leakage current
IGES
VCE=0V , VGE=20V
600
nA
Integrated gate resistor
RGint
V
Ω
2
ELECTRICAL CHARACTERISTICS (verified by design/characterization):
Parameter
Symbol
Conditions
Value
min.
typ.
Input capacitance
Ci s s
V C E= 2 5 V ,
Output capacitance
Co s s
V GE= 0 V ,
384
Reverse transfer capacitance
Cr s s
f =1MHz
183
max.
6160
Unit
pF
SWITCHING CHARACTERISTICS (verified by design/characterization), inductive load
Parameter
Symbol
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
2)
Conditions
Value
min.
Tj= 1 2 5 ° C
V C C = 30 0 V ,
I C = 1 0 0A ,
V GE= - 1 5 / 1 5 V ,
R G = 3 . 3Ω
values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD CLS, L7581A, Edition 2, 27.01.2005
typ.
70
25
260
60
2)
max.
Unit
ns
SIGC54T60R3
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD CLS, L7581A, Edition 2, 27.01.2005
SIGC54T60R3
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
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characteristics.
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regarding circuits, descriptions and charts stated herein.
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Edited by INFINEON Technologies AI PS DD CLS, L7581A, Edition 2, 27.01.2005