INFINEON SIGC14T60NC

SIGC14T60NC
IGBT Chip in NPT-technology
C
FEATURES:
• 600V NPT technology
• 100µm chip
• positive temperature coefficient
• easy paralleling
Chip Type
VCE
SIGC14T60NC
600V
This chip is used for:
• IGBT Modules
G
Applications:
• drives
ICn
15A
Die Size
Package
3.8 x 3.8 mm2
sawn on foil
E
Ordering Code
Q67050-A4135A001
MECHANICAL PARAMETER:
Raster size
3.8 x 3.8
Area total / active
14.44 / 10.7
Emitter pad size
1.89 x 2.19
Gate pad size
mm
2
0.7 x 1.09
Thickness
100
µm
Wafer size
150
mm
Flat position
0
deg
Max.possible chips per wafer
1032
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7232-M, Edition 2, 28.11.2003
SIGC14T60NC
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
600
V
Collector-emitter voltage, Tj=25 °C
V CE
DC collector current, limited by Tjmax
IC
1)
A
Pulsed collector current, tp limited by Tjmax
Icpuls
45
A
Gate emitter voltage
V GE
±20
V
Operating junction and storage temperature
Tj, Ts t g
-55 ... +150
°C
1)
depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:
Parameter
Symbol
Value
Conditions
min.
Unit
typ.
max.
Collector-emitter breakdown voltage
V(BR)CES
VGE=0V, IC =500µA
600
Collector-emitter saturation voltage
VCE(sat)
VGE=15V, IC =15A
1.7
2.0
2.5
Gate-emitter threshold voltage
VGE(th)
IC =400µA, VGE=VCE
4.5
5.5
6.5
Zero gate voltage collector current
ICES
VCE=600V, VGE=0V
1.1
µA
Gate-emitter leakage current
IGES
VCE=0V, VGE=20V
120
nA
V
DYNAMIC CHARACTERISTICS (tested at component):
Parameter
Symbol
Conditions
Value
min.
typ.
max.
Input capacitance
Ci s s
V C E= 2 5 V ,
-
675
-
Output capacitance
Co s s
V GE= 0 V ,
-
tbd
-
Reverse transfer capacitance
Cr s s
f =1MHz
-
60
-
Unit
pF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Parameter
Symbol
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
td(off)
Conditions 1)
Tj= 1 2 5 ° C
Value
min.
typ.
max.
-
21
-
I C =15A
-
8
-
V G E = ± 15V
-
110
-
-
25
-
V C C =300V
R G = 1 8Ω
Fall time
1)
tf
values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L 7232-M, Edition 2, 28.11.2003
Unit
ns
SIGC14T60NC
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 7232-M, Edition 2, 28.11.2003
SIGC14T60NC
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
FS 15 R06 XL4
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see
address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies AI PS DD HV3, L 7232-M, Edition 2, 28.11.2003