Philips Semiconductors Linear Products Product specification Voltage comparator NE529 DESCRIPTION PIN CONFIGURATIONS The NE529 is a high-speed analog voltage comparator which, for the first time, mates state-of-the-art Schottky diode technology with the conventional linear process. This allows simultaneous fabrication of high-speed TTL gates with a precision linear amplifier on a single monolithic chip. D, N Packages V1 + FEATURES 1 14 V2 + NC 2 13 STROBE A INPUT A 3 12 NC INPUT B 4 11 OUTPUT A NC 5 10 GND 6 9 OUTPUT B NC 7 8 STROBE B • 10ns propagation delay • Complementary output gates • TTL or ECL compatible outputs • Wide common-mode and differential voltage range • Typical gain 5000 V1 – TOP VIEW BLOCK DIAGRAM APPLICATIONS • A/D conversion • ECL-to-TTL interface • TTL-to-ECL interface • Memory sensing • Optical data coupling V2 + STROBE A V1 + OUTPUT A INPUT A INPUT B OUTPUT B V1 – STROBE B ORDERING INFORMATION TEMPERATURE RANGE ORDER CODE DWG # 14-Pin Plastic Dual In-Line Package (DIP) DESCRIPTION 0 to +70°C NE529N 0405B 14-Pin Small Outline (SO) Package 0 to +70°C NE529D 0175D R1 V2 + STROBE A V1 + 1K R13 20K 1K R14 R15 R16 4K 1.5K R17 55 Q3 D1 Q17 D3 Q18 D10 D2 R2 1.5K R3 1.5K Q4 Q5 D4 Q1 R10 20K Q19 6.13K R9 R21 4K 55 R23 R22 1.5K R20 500 Q20 GND Q24 Q7 Q8 Q9 Q27 D7 R24 4K Q22 Q21 R5 300 R6 300 R7 100 R8 200 D9 OUTPUT B Q25 D8 200 250 R19 Q23 Q10 Q11 Q2 Q6 R4 OUTPUT A Q26 Q15 D6 V1 – 4K Q13 Q14 Q12 D5 INPUT B INPUT A 750 R12 750 R11 R18 250 R26 D11 R25 500 Q26 STROBE B August 31, 1994 320 853-0902 13721 Philips Semiconductors Linear Products Product specification Voltage comparator NE529 ABSOLUTE MAXIMUM RATINGS RATING UNIT V1+ SYMBOL Positive supply voltage PARAMETER +15 V V1- Negative supply voltage -15 V V2+ Gate supply voltage +7 V VOUT Output voltage +7 V VIN Differential input voltage ±5 V VCM Input common mode voltage ±6 V PD Maximum power dissipation1 TA=25°C (still-air) N package 1420 mW D package 1040 mW 0 to +70 °C -65 to +150 °C +300 °C TA Operating temperature range TSTG Storage temperature range TSOLD Lead soldering temperature (10 sec max) NOTES: 1. Derate above 25°C at the following rates: N package at 11.5mW/°C D package at 8.3mW/°C August 31, 1994 321 Philips Semiconductors Linear Products Product specification Voltage comparator NE529 DC ELECTRICAL CHARACTERISTICS V1+=+10V, V2+=+5.0V, V1-=-10V, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS NE529 Min Typ Max UNIT Input characteristics VOS IBIAS IOS Input offset voltage @ 25°C 6 Over temperature range 10 Input bias current @ 25°C 5 Over temperature range VIN=0V 50 Input offset current @ 25°C 2 Over temperature range VCM VIN=0V Common-mode voltage range 20 -5 0 2.7 3.3 mV µA 5 µA 15 µA V Gate characteristics Output voltage VOUT “1” state V2+=4.75V, ISOURCE=-1mA “0” state V2+=4.75V, ISINK=10mA V 0.5 V Strobe inputs ISC “0” Input current1 V2+=5.25V, VSTROBE=0.5V -2 mA “1” Input current @ 25°C1 V2+=5.25V, VSTROBE=2.7V 100 µA Over temperature range V2+=5.25V, VSTROBE=2.7V 200 µA “0” input voltage V2+=4.75V 0.8 V “1” input voltage V2+=4.75V 2.0 V2+=5.25V, VOUT=0V -18 Short-circuit output current V -70 mA Power supply requirements Supply voltage V1+ 5 10 V V1- -6 -10 V V2+ 4.75 5.25 V Supply current 5 V1+=10V, V1-=-10V V2+=5.25V I1+ Over temp. 5 mA I1- Over temp. 10 mA I2+ Over temp. 20 mA NOTES: 1. See logic function table. AC ELECTRICAL CHARACTERISTICS TA=25°C (See AC test circuit). SYMBOL tR PARAMETER Transient response TEST CONDITIONS LIMITS Min Typ Max UNIT VIN=±100mV step Propagation delay time tPLH Low-to-high 12 22 ns tPHL High-to-low 10 20 ns 2 5 ns Delay between output A and B Strobe delay time tON turn-on time 6 ns tOFF turn-off time 6 ns August 31, 1994 322 Philips Semiconductors Linear Products Product specification Voltage comparator NE529 TYPICAL PERFORMANCE CHARACTERISTICS Input Currents vs Temperature Power Dissipation vs Supply Voltage Supply Currents vs Temperature 160 15 8 BIAS CURRENT 4 2 0 0.6 OFFSET CURRENT V2 + = 5.0V 13 7 I1 – 6 V1 – = 10V 5 4 I1 + 3 V1 + = 10V 2 0.2 0 –50 –25 0 25 50 –50 –25 75 100 125 TEMPERATURE — oC 5 4 T1 + 2 1 5 6 7 8 75 120 110 100 100 5 9 OUTPUT A V1 + = 10V, V1 – = — 10V V2 + = 5.0V INPUT A 0 –100 OVERDRIVE 0 5 10 SUPPLY VOLTAGE (V1 +, V1 –) — VOLTS 15 20 8 9 4 OUTPUT A 3 25 OVERDRIVE +50mV +25mV 2 +10mV +5mV +15mV 0 +100 OVERDRIVE 0 INPUT B –100 0 30 5 10 15 20 TIME — ns TIME — ns RESPONSE TIME TEST CIRCUIT (V1 +) +10 10µF + + .1 1K 500Ω (V2 +) +5 10µF .1 INPUT PROBE 1 13 OUTPUT PROBE 14 +5 5K R1 R2 51Ω 51Ω RL 11 3 INPUT CR1 4 +5 9 CL CR2 R3 6 8 1K (V1 –) –10 .1 NOTES: CR1 — CR4 = IN914 R1 selected for 15.1 divider R2, 3 selected for 100mV at Pin 4 August 31, 1994 Input PRR = 1MHz Pw = 50ns Tr = Tf = 2ns Amplitude = 3.00V +5 Output RL = 390Ω CL = 25pF (including stray capacitance 323 10 V1 + = 10V, V1 – = — 10V V2 + = 5.0V 5 1 OUTPUT B 0 10 7 Response Time for Various Input Overdrives 2 +100 6 SUPPLY VOLTAGE (V1 +, V1 –) — VOLTS 3 1 3 0 5 T2 + 4 INPUT VOLTAGE — mV SUPPLY CURRENT — mA OUTPUT VOLTAGE — V TA = 25oC V2 + = 5.0V T1 – 50 130 Output Propagation Delays 8 6 25 140 TEMPERATURE — oC Supply Current vs Supply Voltage 7 0 V2 + = 5.0V TA = 25oC 150 OUTPUT VOLTAGE — V 0.4 14 INPUT VOLTAGE — mV 6 I2 + POWER DISSIPATION — mW 10 SUPPLY CURRENT — mA INOUR CURRENT —µ A 12 10 CR3 CR4 25 30 Philips Semiconductors Linear Products Product specification Voltage comparator NE529 range should be limited to values of 2V less than the supply voltages (V+ and V-) up to a maximum of ±5V as supply voltages are increased. APPLICATIONS One of the main features of the device is that supply voltages (V+, V-) need not be balanced, as in the following diagrams. For proper operation, however, negative supply (V-) should always be at least 6V more than the ground terminal (pin 6). Input Common-Mode It is also important to note that Output A is in phase with Input A and Output B is in phase with Input B. LOGIC FUNCTION VID (A+, B-) STROBE A STROBE B OUTPUT A OUTPUT B VID≤-VOS H X L H -VOS<VID<VOS H H Undefined Undefined VID≥VOS X H H L X L L H H TYPICAL APPLICATIONS + 5V + 5V λ R2 R2 1 14 3 1 Q TTL OUTPUTS R2 ECL Q 9 4 9 4 INPUT 10 – 6V Q 10 6 R1 R1 R1 Q 11 529N 529N 6 14 3 11 R1 – 10V Photodiode Detector ECL-to-TTL Interface + 5V VREF + 5V 3R1 1 1103 MOS RAM 14 3 TTL INPUT Q 2K 1 14 3 11 11 529N 529N Q 100Ω R1 100Ω R1 – 10V – 6V MOS Memory Sense AMP August 31, 1994 10 6 10 6 9 4 9 4 – 5.2V TTL-to-ECL Interface 324 2K