Philips Semiconductors RF Communications Products Product specification High frequency operational amplifier DESCRIPTION NE/SE5539 PIN CONFIGURATION The NE/SE5539 is a very wide bandwidth, high slew rate, monolithic operational amplifier for use in video amplifiers, RF amplifiers, and extremely high slew rate amplifiers. D, F, N Packages Emitter-follower inputs provide a true differential input impedance device. Proper external compensation will allow design operation over a wide range of closed-loop gains, both inverting and non-inverting, to meet specific design requirements. FEATURES • Bandwidth – Unity gain - 350MHz – Full power - 48MHz + INPUT 1 NC 2 14 + – - INPUT 13 NC -VSUPPLY 3 12 FREQUENCY COMPENS. NC NC 4 11 VOSADJ / AV ADJ NC 5 10 +V 6 9 NC GROUND 7 8 OUTPUT – GBW - 1.2GHz at 17dB • Slew rate: 600/Vµs • AVOL: 52dB typical • Low noise - 4nV√Hz typical • MIL-STD processing available Top View • Satellite communications • Image processing • RF instrumentation & oscillators • Magnetic storage • Military communications APPLICATIONS • High speed datacom • Video monitors & TV ORDERING INFORMATION TEMPERATURE RANGE ORDER CODE 14-Pin Plastic Dual In-Line Package (DIP) DESCRIPTION 0 to +70°C NE5539N DWG # 0405B 14-Pin Plastic Small Outline (SO) package 0 to +70°C NE5539D 0175D 14-Pin Ceramic Dual In-Line Package 0 to +70°C NE5539F 0581B 14-Pin Ceramic Dual In-Line Package -55 to +125°C SE5539F 0581B ABSOLUTE MAXIMUM RATINGS1 SYMBOL VCC PDMAX TA TSTG TJ TSOLD RATING UNITS Supply voltage PARAMETER ±12 V Maximum power dissipation, TA = 25°C (still-air)2 F package N package D package 1.17 1.45 0.99 W W W Operating temperature range NE SE 0 to 70 -55 to +125 °C °C Storage temperature range -65 to +150 °C Max junction temperature 150 °C Lead soldering temperature (10sec max) +300 °C NOTES: 1. Differential input voltage should not exceed 0.25V to prevent excesive input bias current and common-mode voltage 2.5V. These voltage limits may be exceeded if current is limited to less than 10mA. 2. Derate above 25°C, at the following rates: F package at 9.3mW/°C N package at 11.6mW/°C D package at 7.9mW/°C April 15, 1992 229 853-0814 06456 Philips Semiconductors RF Communications Products Product specification High frequency operational amplifier NE/SE5539 EQUIVALENT CIRCUIT (12) FREQUENCY COMP. (10) +VCC R18 R19 R3 R5 (–) 14 INVERTING INPUT R2 R6 (+) 1 NON–INVERTING INPUT Q1 Q6 R8 Q4 Q5 Q3 Q2 Q7 Q8 R20 R21 R1 (8) OUTPUT R4 R9 R10 2.2k (7) GRD R13 Q9 Q10 R11 Q11 R12 R7 R15 R14 R16 R17 (3) –VCC 5 DC ELECTRICAL CHARACTERISTICS VCC = ±8V, TA = 25°C; unless otherwise specified. SYMBOL VOS PARAMETER Input offset voltage TEST CONDITIONS VO = 0V, RS = 100Ω SE5539 MIN MAX Over temp 2 5 TA = 25°C 2 3 Over temp 0.1 3 TA = 25°C 0.1 1 ∆VOS/∆T IOS Input offset current Input bias current 25 TA = 25°C 5 13 RIN ROUT Common mode rejection ratio Over temp 70 80 5 5 10 80 2.5 10 70 80 UNITS mV µV/°C 0.5 6 70 MAX 2 0.5 F = 1kHz, RS = 100Ω, VCM ±1.7V TYP 5 Over temp ∆IB/∆T CMRR MIN 5 ∆IOS/∆T IB NE5539 TYP µA nA/°C 20 µA nA/°C dB Input impedance 100 100 kΩ Output impedance 10 10 Ω April 15, 1992 230 Philips Semiconductors RF Communications Products Product specification High frequency operational amplifier NE/SE5539 DC ELECTRICAL CHARACTERISTICS (Continued) VCC = ±8V, TA = 25°C; unless otherwise specified. SYMBOL PARAMETER VOUT Output voltage swing VOUT Output voltage swing ICC+ Positive supply current ICC- Negative supply current PSRR Power supply rejection ratio AVOL Large signal voltage gain AVOL Large signal voltage gain AVOL Large signal voltage gain SE5539 TEST CONDITIONS MIN TYP RL = 150Ω to GND and 470Ω to -VCC +Swing -Swing RL = 25Ω to GND Over temp +Swing -Swing +2.3 -1.5 +3.0 -2.1 RL = 25Ω to GND TA = 25°C +Swing -Swing +2.5 -2.0 +3.1 -2.7 NE5539 MAX MIN TYP +2.3 -1.7 +2.7 -2.2 14 18 VO = 0, R1 = ∞, TA = 25°C 14 17 VO = 0, R1 = ∞, Over temp 11 15 VO = 0, R1 = ∞, TA = 25°C 11 14 ∆VCC = ±1V, Over temp 300 1000 VO = +2.3V, -1.7V, RL = 150Ω to GND, 470Ω to -VCC RL = 2Ω to GND TA = 25°C VO = +2.5V, -2.0V Over temp 46 RL = 2Ω to GND TA = 25°C 48 V 14 18 11 15 200 1000 47 52 57 47 52 57 ∆VCC = ±1V, TA = 25°C Over temp UNITS V VO = 0, R1 = ∞, Over temp VO = +2.3V, -1.7V MAX mA mA µV/V dB dB 60 53 dB 58 DC ELECTRICAL CHARACTERISTICS VCC = ±6V, TA = 25°C; unless otherwise specified. SYMBOL PARAMETER VOS Input offset voltage IOS Input offset current IB Input bias current CMRR Common-mode rejection ratio ICC+ Positive supply current ICC- Negative supply current PSRR VOUT Power supply rejection ratio Output voltage swing April 15, 1992 SE5539 TEST CONDITIONS MIN TYP MAX Over temp 2 5 TA = 25°C 2 3 Over temp 0.1 3 TA = 25°C 0.1 1 Over temp 5 20 TA = 25°C 4 10 VCM = ±1.3V, RS = 100Ω ∆VCC = ±1V 70 85 11 14 TA = 25°C 11 13 Over temp 8 11 TA = 25°CmA 8 10 Over temp 300 1000 Over +Swing +1.4 RL = 150Ω to GND temp –Swing –1.1 –1.7 and 390Ω to –VCC TA = +Swing +1.5 +2.0 25°C –Swing –1.4 –1.8 231 mV µA µA dB Over temp TA = 25°C UNITS mA mA µV/V +2.0 V Philips Semiconductors RF Communications Products Product specification High frequency operational amplifier NE/SE5539 AC ELECTRICAL CHARACTERISTICS VCC = ±8V, RL = 150Ω to GND and 470Ω to -VCC, unless otherwise specified. SYMBOL BW PARAMETER TEST CONDITIONS SE5539 MIN TYP NE5539 MAX MIN TYP MAX UNITS Gain bandwidth product ACL = 7, VO = 0.1 VP-P 1200 1200 MHz Small signal bandwidth ACL = 2, RL = 150Ω1 110 110 MHz tS Settling time ACL = 2, RL = 150Ω1 15 15 ns SR Slew rate ACL = 2, RL = 150Ω1 600 600 V/µs tPD Propagation delay ACL = 2, RL = 150Ω1 7 7 ns Full power response ACL = 2, RL = 150Ω1 48 48 MHz Full power response AV = 7, RL = 150Ω1 20 20 MHz Input noise voltage RS = 50Ω, 1MHz 4 4 nV/√Hz Input noise current 1MHz 6 6 pA/√Hz NOTES: 1. External compensation. AC ELECTRICAL CHARACTERISTICS VCC = ±6V, RL = 150Ω to GND and 390Ω to -VCC, unless otherwise specified. SYMBOL PARAMETER SE5539 TEST CONDITIONS MIN TYP MAX UNITS Gain bandwidth product ACL = 7 700 Small signal bandwidth ACL = 21 120 tS Settling time ACL = 21 23 ns SR Slew rate ACL = 21 330 V/µs tPD Propagation delay ACL = 21 4.5 ns Full power response ACL = 21 20 MHz BW MHz NOTES: 1. External compensation. TYPICAL PERFORMANCE CURVES NE5539 Open-Loop Phase NE5539 Open-Loop Gain 60 50 40 90 GAIN (dB) PHASE (DEG) 0 180 30 20 270 10 360 1 MHz 10MHz 100MHz 0 1 MHz 1GHz FREQUENCY (Hz) April 15, 1992 10MHz 100MHz FREQUENCY (Hz) 232 1GHz Philips Semiconductors RF Communications Products Product specification High frequency operational amplifier NE/SE5539 TYPICAL PERFORMANCE CURVES (Continued) Power Bandwidth (SE) Power Bandwidth (NE) 4 5 p–p OUTPUT (V) p–p OUTPUT (V) 3 4 3dB B.W 3 2 GAIN (—2) VCC = +8V RL = 2kΩ 3dB B.W. 2 VCC = +6V RL = 150kΩ GAIN (—2) 1 0 1 MHz 1 1 MHz 10MHz 100MHz 10MHz 100MHz 300Mhz FREQUENCY (Hz) 300Mhz FREQUENCY (Hz) SE5539 Open-Loop Gain vs Frequency Power Bandwidth REF 3.04V P-P 50 dB BELOW REF GAIN (dB) 40 30 20 VCC = +6V RL = 126Ω –2 –4 –6 –8 GAIN (–7) –10 10 RL = 150Ω –12 0o 1 MHz 10MHz 100MHz 1MHz 300Mhz 10MHz FREQUENCY (Hz) SE5539 Open-Loop Phase vs Frequency 300MHz Gain Bandwidth Product vs Frequency 0° 22 45° 20 AV = X10 VCC = ±6V RL = 150Ω GAIN (dB) PHASE (DEG) 100MHz FREQUENCY (Hz) 90° 135° 180° 1MHz VCC = ±6V AV = X7.5 3dB BANDWIDTH 16 3dB BANDWIDTH 14 RL = 126Ω 10MHz 100MHz 300MHz FREQUENCY (Hz) 12 1MHz 10MHz FREQUENCY (Hz) NOTE: Indicates typical distribution –55°C ≤ TA ≤ 125°C April 15, 1992 18 233 100MHz 300MHz Philips Semiconductors RF Communications Products Product specification High frequency operational amplifier NE/SE5539 Bread-boarding is not recommended. A double-sided copper-clad printed circuit board will result in more favorable system operation. An example utilizing a 28dB non-inverting amp is shown in Figure 1. CIRCUIT LAYOUT CONSIDERATIONS As may be expected for an ultra-high frequency, wide-gain bandwidth amplifier, the physical circuit is extremely critical. RF OPTIONAL OFFSET ADJ. +V 1nF +V –V R5 R4 RFC 1nF –14 R1 R3 75 NE5539 10 8 7 3 75 VOUT 470 +1 75Ω TERM R6 VIN 1nF R2 RFC 75 1nF —V R1 = 75Ω 5% CARBON R2 = 75Ω 5% CARBON R3 = 75Ω 5% CARBON R4 = 36K 5% CARBON R5 = 20k TRIMPOT (CERMET) RFC 3T # 26 BUSS WIRE ON RF = 1.5k (28dB GAIN) R6 = 470Ω 5% CARBON FERROXCUBE VK 200 09/3B CORE BYPASS CAPACITORS 1nF CERAMIC (MEPCO OR EQUIV.) Top Plane Copper1 (Component Side) Component Side (Component Layout) —V X R5 X R4 R2 Bottom Plane Copper1 R1 +V (1) RFC VIN X X X X CC RFC X X X X R 6 X X RF R5 Figure 1. 28dB Non-Inverting Amp Sample PC Layout April 15, 1992 234 Philips Semiconductors RF Communications Products Product specification High frequency operational amplifier NE/SE5539 the top of the staircase. The maximum differential phase shown in Figure 5 is approximately +0.1°. NE5539 COLOR VIDEO AMPLIFIER The NE5539 wideband operational amplifier is easily adapted for use as a color video amplifier. A typical circuit is shown in Figure 2 along with vector-scope1 photographs showing the amplifier differential gain and phase response to a standard five-step modulated staircase linearity signal (Figures 3, 4 and 5). As can be seen in Figure 4, the gain varies less than 0.5% from the bottom to The amplifier circuit was optimized for a 75Ω input and output termionation impedance with a gain of approximately 10 (20dB). NOTE: 1. The input signal was 200mV and the output 2V. VCC was ±8V. 750 75 —V 22nF — 14 1 10 8 VIN 3 + 1 75 7 470 6dB LOSS—1 ZO = 75Ω 75 75 —V 22nF —V Figure 2. NE5539 Video Amplifier Figure 3. Input Signal Figure 4. Differential Gain <0.5% NOTE: Instruments used for these measurements were Tektronix 146 NTSC test signal generator, 520A NTSC vectorscope, and 1480 waveform monitor. April 15, 1992 235 Philips Semiconductors RF Communications Products Product specification High frequency operational amplifier NE/SE5539 Figure 5. Differential Gain +0.1o +2V –8V ZIN = 500Ω 1 820 + 470 2–10pF NE5539 14 118 ZO = 50Ω 8 220 87 – 1K 2K CLEAD ≈ 1.5pF Figure 6. Non-Inverting Follower +8V –8V 1 + 1K NE5539 2–20pF 14 50 470 118 320 8 87 – 1K 3.3pF Figure 7. Inverting Follower April 15, 1992 236