DISCRETE SEMICONDUCTORS DATA SHEET M3D082 BR101 Silicon controlled switch Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 24 Philips Semiconductors Product specification Silicon controlled switch DESCRIPTION BR101 PINNING Silicon planar PNPN switch in a TO-72 metal package. It is an integrated PNP/NPN transistor pair, with all electrodes accessible. PIN APPLICATIONS DESCRIPTION 1 cathode 2 cathode gate 3 anode gate (connected to case) 4 anode • Time base circuits • Switching in television circuits • Trigger device for thyristors. a handbook, halfpage 1 ok, halfpage 4 ag 2 kg 3 MSB028 k MGL168 Fig.1 Simplified outline (TO-72) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MAX. UNIT PNP transistor VEBO emitter-base voltage open collector −50 V open emitter 50 V −2.5 A 275 mW 150 °C NPN transistor VCBO collector-base voltage IERM repetitive peak emitter current Tamb ≤ 25 °C Ptot total power dissipation Tj junction temperature VAK forward on-state voltage IA = 50 mA; IAG = 0; RKG-K = 10 kΩ 1.4 V IH holding current IAG = 10 mA; VBB = −2 V; RKG-K = 10 kΩ 1 mA 1997 Jul 24 2 Philips Semiconductors Product specification Silicon controlled switch BR101 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor VCBO collector-base voltage open emitter − 50 V VCER collector-emitter voltage RBE = 10 kΩ − 50 V VEBO emitter-base voltage open collector; note 1 − 5 V IC collector current (DC) note 2 − 175 mA ICM peak collector current − 175 mA IE emitter current (DC) IERM repetitive peak emitter current − −175 mA tp = 10 µs; δ = 0.01 − −2.5 A PNP transistor VCBO collector-base voltage open emitter − −50 V VCEO collector-emitter voltage open base − −50 V VEBO emitter-base voltage open collector − −50 V IE emitter current (DC) − 175 mA IERM repetitive peak emitter current tp = 10 µs; δ = 0.01 − 2.5 A Tamb ≤ 25 °C − 275 mW Combined device Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. It is permitted to exceed this voltage during the discharge of a capacitor of max. 390 pF, provided the charge does not exceed 50 nC. 2. Provided the IE rating is not exceeded. THERMAL CHARACTERISTICS SYMBOL Rth j-a 1997 Jul 24 PARAMETER CONDITIONS thermal resistance from junction to ambient in free air 3 VALUE UNIT 0.45 K/mW Philips Semiconductors Product specification Silicon controlled switch BR101 a (anode) (e2 ) e2 handbook, halfpage ag (anode gate) (c 1,b 2) PNP transistor b 1,c 2 kg (cathode gate) (b1 ,c 2) P N P NPN transistor MBB681 e1 k (cathode) (e1 ) MBB680 Fig.2 Two transistor equivalent circuit. handbook, halfpage Fig.3 PNPN silicon controlled switch structure. a IA IA handbook, halfpage IAG IAG a ag IKG c 1,b 2 N P N VAK ag RKG-K kg −IK VBB k kg k DUT MBB683 MBB682 Fig.4 Silicon controlled switch symbol. 1997 Jul 24 Fig.5 Equivalent test circuit for holding current. 4 Philips Semiconductors Product specification Silicon controlled switch BR101 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT NPN transistor ICER collector cut-off current IEBO emitter cut-off current − − 500 nA VCE = 50 V; RBE = 10 kΩ; Tj = 150 °C − − 50 µA IC = 0; VEB = 5 V; Tj = 150 °C − − 50 µA VCE = 50 V; RBE = 10 kΩ VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 1 mA − − 500 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 1 mA − − 900 mV hFE DC current gain IC = 10 mA; VCE = 2 V 50 − − fT transition frequency IC = 10 mA; VCE = 2 V − 300 − MHz Cc collector capacitance IE = ie = 0; VCB = 20 V; f = 1 MHz − − 5 pF Ce emitter capacitance IC = ic = 0; VEB = 1 V − − 25 pF PNP transistor ICEO collector cut-off current IB = 0; VCE = −50 V; Tj = 150 °C − − −50 µA IEBO emitter cut-off current IC = 0; VEB = −50 V; Tj = 150 °C − − −50 µA hFE DC current gain IE = 1 mA; VCB = 0 V 0.25 − 2.5 Combined device VAK IH 1997 Jul 24 forward on-state voltage holding current RKG-K = 10 kΩ IA = 50 mA; IAG = 0 − − 1.4 V IA = 1 mA; IAG = 10 mA − − 1.2 V RKG-K = 10 kΩ; IAG = 10 mA; VBB = −2 V − − 1 mA 5 Philips Semiconductors Product specification Silicon controlled switch BR101 PACKAGE OUTLINE Metal-can cylindrical single-ended package; 4 leads SOT18/9 α j seating plane B w M A M B M 1 b 4 k D1 2 3 a D A A 0 5 L 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A a b D D1 j k L w α mm 5.31 4.74 2.54 0.46 0.42 5.45 5.30 4.70 4.55 1.05 0.95 1.0 0.9 14.5 13.5 0.36 45° REFERENCES OUTLINE VERSION IEC JEDEC SOT18/9 B12/C7 type 3 TO-72 1997 Jul 24 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-18 6 Philips Semiconductors Product specification Silicon controlled switch BR101 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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