PHILIPS BR101

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D082
BR101
Silicon controlled switch
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 24
Philips Semiconductors
Product specification
Silicon controlled switch
DESCRIPTION
BR101
PINNING
Silicon planar PNPN switch in a
TO-72 metal package. It is an
integrated PNP/NPN transistor pair,
with all electrodes accessible.
PIN
APPLICATIONS
DESCRIPTION
1
cathode
2
cathode gate
3
anode gate (connected to case)
4
anode
• Time base circuits
• Switching in television circuits
• Trigger device for thyristors.
a
handbook, halfpage
1
ok, halfpage
4
ag
2
kg
3
MSB028
k
MGL168
Fig.1 Simplified outline (TO-72) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
PNP transistor
VEBO
emitter-base voltage
open collector
−50
V
open emitter
50
V
−2.5
A
275
mW
150
°C
NPN transistor
VCBO
collector-base voltage
IERM
repetitive peak emitter current
Tamb ≤ 25 °C
Ptot
total power dissipation
Tj
junction temperature
VAK
forward on-state voltage
IA = 50 mA; IAG = 0; RKG-K = 10 kΩ
1.4
V
IH
holding current
IAG = 10 mA; VBB = −2 V; RKG-K = 10 kΩ
1
mA
1997 Jul 24
2
Philips Semiconductors
Product specification
Silicon controlled switch
BR101
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
NPN transistor
VCBO
collector-base voltage
open emitter
−
50
V
VCER
collector-emitter voltage
RBE = 10 kΩ
−
50
V
VEBO
emitter-base voltage
open collector; note 1
−
5
V
IC
collector current (DC)
note 2
−
175
mA
ICM
peak collector current
−
175
mA
IE
emitter current (DC)
IERM
repetitive peak emitter current
−
−175
mA
tp = 10 µs; δ = 0.01
−
−2.5
A
PNP transistor
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−50
V
VEBO
emitter-base voltage
open collector
−
−50
V
IE
emitter current (DC)
−
175
mA
IERM
repetitive peak emitter current
tp = 10 µs; δ = 0.01
−
2.5
A
Tamb ≤ 25 °C
−
275
mW
Combined device
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. It is permitted to exceed this voltage during the discharge of a capacitor of max. 390 pF, provided the charge does
not exceed 50 nC.
2. Provided the IE rating is not exceeded.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
1997 Jul 24
PARAMETER
CONDITIONS
thermal resistance from junction to ambient in free air
3
VALUE
UNIT
0.45
K/mW
Philips Semiconductors
Product specification
Silicon controlled switch
BR101
a (anode)
(e2 )
e2
handbook, halfpage
ag (anode gate)
(c 1,b 2)
PNP transistor
b 1,c 2
kg (cathode gate)
(b1 ,c 2)
P
N
P
NPN transistor
MBB681
e1
k (cathode)
(e1 )
MBB680
Fig.2 Two transistor equivalent circuit.
handbook, halfpage
Fig.3 PNPN silicon controlled switch structure.
a
IA
IA
handbook, halfpage
IAG
IAG
a
ag
IKG
c 1,b 2
N
P
N
VAK
ag
RKG-K
kg
−IK
VBB
k
kg
k
DUT
MBB683
MBB682
Fig.4 Silicon controlled switch symbol.
1997 Jul 24
Fig.5 Equivalent test circuit for holding current.
4
Philips Semiconductors
Product specification
Silicon controlled switch
BR101
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
NPN transistor
ICER
collector cut-off current
IEBO
emitter cut-off current
−
−
500
nA
VCE = 50 V; RBE = 10 kΩ; Tj = 150 °C −
−
50
µA
IC = 0; VEB = 5 V; Tj = 150 °C
−
−
50
µA
VCE = 50 V; RBE = 10 kΩ
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB = 1 mA
−
−
500
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 1 mA
−
−
900
mV
hFE
DC current gain
IC = 10 mA; VCE = 2 V
50
−
−
fT
transition frequency
IC = 10 mA; VCE = 2 V
−
300
−
MHz
Cc
collector capacitance
IE = ie = 0; VCB = 20 V; f = 1 MHz
−
−
5
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 1 V
−
−
25
pF
PNP transistor
ICEO
collector cut-off current
IB = 0; VCE = −50 V; Tj = 150 °C
−
−
−50
µA
IEBO
emitter cut-off current
IC = 0; VEB = −50 V; Tj = 150 °C
−
−
−50
µA
hFE
DC current gain
IE = 1 mA; VCB = 0 V
0.25
−
2.5
Combined device
VAK
IH
1997 Jul 24
forward on-state voltage
holding current
RKG-K = 10 kΩ
IA = 50 mA; IAG = 0
−
−
1.4
V
IA = 1 mA; IAG = 10 mA
−
−
1.2
V
RKG-K = 10 kΩ; IAG = 10 mA;
VBB = −2 V
−
−
1
mA
5
Philips Semiconductors
Product specification
Silicon controlled switch
BR101
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 4 leads
SOT18/9
α
j
seating plane
B
w M A M B M
1
b
4
k
D1
2
3
a
D
A
A
0
5
L
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
a
b
D
D1
j
k
L
w
α
mm
5.31
4.74
2.54
0.46
0.42
5.45
5.30
4.70
4.55
1.05
0.95
1.0
0.9
14.5
13.5
0.36
45°
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT18/9
B12/C7 type 3
TO-72
1997 Jul 24
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-18
6
Philips Semiconductors
Product specification
Silicon controlled switch
BR101
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jul 24
7
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 Jul 24
Document order number:
9397 750 02657