DISCRETE SEMICONDUCTORS DATA SHEET BUW13F; BUW13AF Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. ook, halfpage APPLICATIONS • Converters 2 handbook, halfpage • Inverters 1 • Switching regulators • Motor control systems. MBB008 3 PINNING PIN DESCRIPTION 1 base 2 collector 3 emitter mb 1 2 3 Front view mounting base; electrically isolated MSB012 Fig.1 Simplified outline (SOT199) and symbol. QUICK REFERENCE DATA SYMBOL VCESM VCEO PARAMETER collector-emitter peak voltage CONDITIONS MAX. UNIT VBE = 0 BUW13F 850 V BUW13AF 1000 V BUW13F 400 V BUW13AF 450 V 1.5 V 10 A collector-emitter voltage VCEsat collector-emitter saturation voltage ICsat collector saturation current open base see Figs 8 and 10 BUW13F 8 A IC collector current (DC) BUW13AF see Figs 3 and 4 15 A ICM collector current (peak value) tp < 20 ms; see Fig 4 30 A Ptot total power dissipation Th ≤ 25 °C; see Fig.2 37 W tf fall time resistive load; see Fig.13 0.8 µs 1997 Aug 13 2 Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a PARAMETER CONDITIONS VALUE UNIT thermal resistance from junction to external heatsink note 1 3.4 K/W note 2 2.5 K/W 35 K/W thermal resistance from junction to ambient Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM VCEO ICsat PARAMETER collector-emitter peak voltage CONDITIONS MIN. MAX. UNIT VBE = 0 BUW13F − 850 V BUW13AF − 1000 V BUW13F − 400 V BUW13AF − 450 V − 10 A collector-emitter voltage open base collector saturation current BUW13F − 8 A IC collector current (DC) see Figs 3 and 4 − 15 A ICM collector current (peak value) tp < 20 ms; see Fig 4 − 30 A IB base current (DC) − 6 A IBM base current (peak value) tp = −20 ms − 9 A Ptot total power dissipation Th ≤ 25 °C; see Fig.2; note 1 − 37 W Th ≤ 25 °C; see Fig.2; note 2 − 50 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C BUW13AF Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. ISOLATION CHARACTERISTICS SYMBOL PARAMETER MAX. UNIT VisolM isolation voltage from all terminals to external heatsink (peak value); note 1 2000 V Cisol isolation capacitance from collector to external heatsink pF Note 1. Repetitive peak operation with RH ≤ 65% under clean and dust-free conditions. 1997 Aug 13 3 21 Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VCEOsust PARAMETER CONDITIONS collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH; see Figs 6 and 7 400 BUW13F BUW13AF VCEsat VBEsat ICsat ICES MIN. TYP. MAX. UNIT − − V 450 − − V collector-emitter saturation voltage BUW13F IC = 10 A; IB = 2 A; see Figs 8 and 10 − − 1.5 V BUW13AF IC = 8 A; IB = 1.6 A; see Figs 8 and 10 − − 1.5 V base-emitter saturation voltage BUW13F IC = 10 A; IB = 2 A; see Fig.8 − − 1.6 V BUW13AF IC = 8 A; IB = 1.6 A; see Fig.8 − − 1.6 V BUW13F − − 10 A BUW13AF − − 8 A VCE = VCESMmax; VBE = 0; note 1 − − 1 mA VCE = VCESMmax; VBE = 0; Tj = 125 °C; note 1 − − 4 mA mA collector saturation current collector-emitter cut-off current VCE = 1.5 V IEBO emitter-base cut-off current VEB = 9 V; IC = 0 − − 10 hFE DC current gain VCE = 5 V; IC = 20 mA; see Fig.11 10 18 35 VCE = 5 V; IC = 1.5 A; see Fig.11 10 20 35 Switching times resistive load (see Figs 12 and 13) ton ts tf turn-on time BUW13F ICon = 10 A; IBon = IBoff = 2 A − − 1 µs BUW13AF ICon = 8 A; IBon = IBoff = 1.6 A − − 1 µs storage time BUW13F ICon = 10 A; IBon = IBoff = 2 A − − 4 µs BUW13AF ICon = 8 A; IBon = IBoff = 1.6 A − − 4 µs fall time BUW13F ICon = 10 A; IBon = IBoff = 2 A − − 0.8 µs BUW13AF ICon = 8 A; IBon = IBoff = 1.6 A − − 0.8 µs Switching times inductive load (see Figs 14 and 15) ts storage time 1997 Aug 13 BUW13F ICon = 10 A; IB = 2 A; VCL = 250 V; Tc = 100 °C − 2.8 3.5 µs BUW13AF ICon = 8 A; IB = 1.6 A; VCL = 300 V; Tc = 100 °C − 2.8 3.5 µs 4 Philips Semiconductors Product specification Silicon diffused power transistors SYMBOL PARAMETER BUW13F; BUW13AF CONDITIONS MIN. TYP. MAX. UNIT fall time tf BUW13F ICon = 10 A; IB = 2 A; VCL = 250 V; Tc = 100 °C − 200 300 ns BUW13AF ICon = 8 A; IB = 1.6 A; VCL = 300 V; Tc = 100 °C − 200 300 ns Note 1. Measured with a half-sinewave voltage (curve tracer). MGK674 MGB896 20 120 handbook, halfpage handbook, halfpage Ptot max IC (A) (%) 80 10 40 BUW13F BUW13AF 0 0 0 50 100 Th (oC) 0 150 400 800 VCE (V) 1200 Tc ≤ 100 °C; VBE = −1 to −5 V. Fig.2 Power derating curve. 1997 Aug 13 Fig.3 Reverse bias SOAR. 5 Philips Semiconductors Product specification Silicon diffused power transistors handbook, full pagewidth BUW13F; BUW13AF MGB929 102 δ = 0.01 ICM max IC (A) IC max tp = 20 µs 10 50 µs II 1 100 µs 200 µs 500 µs 1 ms 2 ms I 10−1 5 ms 10 ms 20 ms DC 10−2 BUW13F BUW13AF 10−3 10−4 1 10 102 Tmb = 25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. (1) Ptot max and Ptot peak max lines. (2) Second breakdown limits (independent of temperature). Fig.4 Forward bias SOAR. 1997 Aug 13 6 103 VCE (V) 104 Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF MGB866 10 handbook, full pagewidth Zth j−mb (K/W) 1 δ=1 0.75 0.50 0.33 0.20 10−1 0.10 0.05 0.02 10−2 0.01 0 10−3 10−4 10−3 10−2 10−1 1 10 tp (s) 102 Fig.5 Transient thermal impedance. andbook, halfpage handbook,IC halfpage + 50 V MGE239 (mA) 100 to 200 Ω 250 L 200 horizontal oscilloscope 100 vertical 6V 30 to 60 Hz Fig.6 1997 Aug 13 300 Ω 1Ω 0 MGE252 Test circuit for collector-emitter sustaining voltage. Fig.7 7 VCE (V) min VCEOsust Oscilloscope display for collector-emitter sustaining voltage. Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF MGB915 2.0 handbook, full pagewidth VBEsat VCEsat (V) 1.5 1.0 (1) (2) 0.5 (3) (4) 0 10−1 IC/IB = 5. (1) VBE; Tj = 25 °C. 1 (2) VBE; Tj = 100 °C. (3) VCE; Tj = 100 °C. 10 102 IC (A) (4) VCE; Tj = 25 °C. Fig.8 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values. MGB912 1.6 handbook, full pagewidth VBE (V) 1.4 (1) (2) 1.2 (3) 1.0 0.8 0 Tj = 25 °C. (1) IC = 15 A. 1 2 3 4 5 (2) IC = 10 A. (3) IC = 5 A. Fig.9 Base-emitter voltage as a function of base current; typical values. 1997 Aug 13 8 IB (A) 6 Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF MGB871 10 (1) (2) MBC098 102 handbook, halfpage handbook, halfpage (3) VCEsat hFE (V) VCE = 5 V 1V 10 1 10−1 10−2 10−1 1 IB (A) 1 10−2 10 10−1 1 10 2 IC (A) 10 (1) IC = 5 A. (2) IC = 10 A. (3) IC = 15 A. Tj = 25 °C; solid line: typical values; dotted line: maximum values. Tj = 125 °C. Fig.10 Collector-emitter saturation voltage as a function of base current. Fig.11 DC current gain; typical values. handbook, halfpage MBB731 tr ≤30 ns IB on 90% IB 10% VCC handbook, halfpage t IB off RL VIM RB 0 D.U.T. IC on 90% tp T IC MGE244 10% ton VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01. The values of RB and RL are selected in accordance with ICon and IBon requirements. t tr ≤ 20 ns. Fig.13 Switching time waveforms with resistive load. Fig.12 Test circuit resistive load. 1997 Aug 13 tf ts 9 Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF handbook, halfpage tr IB on 90% IB 10% VCC handbook, halfpage t LC +IB −IB off VCL LB IC on 90% D.U.T. −VBE MGE246 IC 10% ts toff VCL ≤ up to 1000 V; VCC = 30 V; VBE = −5 V; LB = 1 µH; LC = 200 µH. Fig.14 Test circuit inductive load and reverse bias SOAR. 1997 Aug 13 t tf MGE238 Fig.15 Switching time waveforms with inductive load. 10 Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF PACKAGE OUTLINE Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads (in-line) SOT199 E E1 m A A1 P α q D L1 Q b1 L 1 2 3 e b c w M e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D E E1 e e1 L mm 5.2 4.8 3.4 3.0 1.2 1.0 2.1 1.9 0.6 0.5 21.5 20.5 15.3 14.7 7.8 6.8 5.45 10.9 16.5 15.7 L1 (1) 3.7 3.3 m P Q q w α 0.8 0.6 3.3 3.1 2.1 1.9 6.2 5.8 0.4 45° Note 1. Terminals in this zone are not tinned. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT199 1997 Aug 13 EUROPEAN PROJECTION ISSUE DATE 97-06-27 11 Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Aug 13 12 Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF NOTES 1997 Aug 13 13 Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF NOTES 1997 Aug 13 14 Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF NOTES 1997 Aug 13 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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