DISCRETE SEMICONDUCTORS DATA SHEET BU4508AF Silicon Diffused Power Transistor Product specification Supersedes data of January 1998 File under Discrete Semiconductors, SC06 June 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCEO IC ICM Ptot VCEsat ICsat Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current VBE = 0 V tf Fall time 5.0 4.0 0.35 0.17 1500 800 8 15 45 3.0 0.48 - V V A A W V A A µs µs PINNING - SOT199 PIN Ths ≤ 25 ˚C IC = 5.0 A; IB = 1.25 A f = 16kHz f = 64kHz ICsat = 5A; f = 16kHz ICsat = 4A; f = 64kHz PIN CONFIGURATION SYMBOL DESCRIPTION 1 base 2 collector 3 emitter case isolated c case b 1 2 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature VBE = 0 V Ths ≤ 25 ˚C MIN. MAX. UNIT -55 - 1500 800 8 15 4 6 5 45 150 150 V V A A A A A W ˚C ˚C TYP. MAX. UNIT - 2.8 K/W 35 - K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Junction to heatsink with heatsink compound Rth j-a Junction to ambient in free air 1 Turn-off current. June 1998 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65 % ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. MAX. UNIT - - 2500 V - 22 - pF MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 7.5 800 13.5 - 100 - uA V V 0.85 4.2 0.94 12 5.7 3.0 1.03 7.3 V V TYP. MAX. UNIT 80 - pF 3.2 4.3 µs 0.35 0.48 µs 1.9 0.17 - µs µs STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER ICES ICES Collector cut-off current 2 IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C Emitter cut-off current VEB = 6.0 V; IC = 0 A Emitter-base breakdown voltage IB = 1 mA Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 5.0 A; IB = 1.25 A Base-emitter saturation voltage IC = 5.0 A; IB = 1.25 A DC current gain IC = 100 mA; VCE = 5 V IC = 5.0 A; VCE = 5 V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 5.0 A; IB1 = 1.0 A;(IB2 = -2.5 A) ts Switching times (16 kHz line deflection circuit) Turn-off storage time tf Turn-off fall time ts tf Switching times (64 kHz line deflection circuit) Turn-off storage time Turn-off fall time ICsat = 4 A; IB1 = 0.8 A;(IB2 = -2.0 A) 2 Measured with half sine-wave voltage (curve tracer). June 1998 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF ICsat + 50v 90 % 100-200R IC 10 % Horizontal tf Oscilloscope t ts IB IB1 Vertical t 1R 100R 6V 30-60 Hz - IB2 Fig.4. Switching times definitions. Fig.1. Test circuit for VCEOsust. IC / mA + 150 v nominal adjust for ICsat Lc 250 200 LB IBend 100 0 VCE / V T.U.T. Cfb -VBB min VCEOsust Fig.5. Switching times test circuit. Fig.2. Oscilloscope display for VCEOsust. TRANSISTOR IC ICsat 100 hFE DIODE Ths = 25 C Ths = 85 C VCE = 1V t IB1 IB 10 t 20us 26us IB2 64us VCE 1 0.001 t Fig.3. Switching times waveforms (16 kHz). June 1998 0.01 0.1 1 IC / A 10 Fig.6. High and low DC current gain. 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF hFE 100 10 ts/tf / us ICsat = 5 A Ths = 85 C Freq = 16 kHz Ths = 25 C Ths = 85 C VCE = 5V 8 ts 6 10 4 2 tf 1 0.001 0.01 0.1 1 0 10 IC / A Fig.7. High and low DC current gain. 0.5 1 1.5 2 2.5 IB / A 3 Fig.10. Typical collector storage and fall time. IC =5 A; Tj = 85˚C; f = 16kHz BU4508AF/X/Z VCEsat / V 10 0 120 Normalised Power Derating PD% with heatsink compound 110 Ths = 25 C Ths = 85 C 100 90 80 70 1 60 50 40 IC/IB = 5 0.1 30 20 10 0 0 0.01 0.1 1 10 IC / A 60 80 Ths / C 100 120 Zth K/W BU4508AF/X/Z VBEsat / V 40 140 Fig.11. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C Fig.8. Typical collector-emitter saturation voltage. 1.2 20 100 BU4508AF 10 Ths = 25 C Ths = 85 C 1.1 0.5 1 0.2 IC = 5 A 1 0.1 0.05 0.1 0.9 0.02 0.8 IC = 4 A PD 0.01 tp D= tp T 0.7 0 0.6 0.001 1.0E-07 0 0.5 1 1.5 2 2.5 IB / A 3 1.0E-03 1.0E-01 t 1.0E+01 t/s Fig.9. Typical base-emitter saturation voltage. June 1998 T 1.0E-05 Fig.12. Transient thermal impedance. 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor 10 BU4508AF Ic(sat) (A) 8 6 4 2 0 0 20 40 60 Frequency (kHz) 80 100 Fig.13. ICsat during normal running vs. frequency of operation for optimum performance June 1998 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF MECHANICAL DATA Dimensions in mm 15.3 max Net Mass: 5.5 g 5.2 max 3.1 3.3 0.7 7.3 3.2 o 45 6.2 5.8 21.5 max seating plane 3.5 max not tinned 3.5 15.7 min 1 2 2.1 max 5.45 3 1.2 1.0 0.7 max 0.4 M 2.0 5.45 Fig.14. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". June 1998 6 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. June 1998 7 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF NOTES June 1998 8 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF NOTES June 1998 9 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF NOTES June 1998 10 Rev 1.000 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 135104/150/03/pp12 Date of release: June 1998 Document order number: 9397 750 04011