BUK208-50Y; BUK213-50Y Single channel high-side TOPFET™ Rev. 02 — 06 June 2002 Product data 1. Product profile 1.1 Description Monolithic temperature and overload protected single high-side power switch based on TOPFET™ Trench technology in a 5-pin surface mount or leadform plastic package. Product availability: BUK208-50Y in SOT263B-01 BUK213-50Y in SOT426 (D2-PAK). 1.2 Features ■ ■ ■ ■ ■ ■ ■ Very low quiescent current Power TrenchMOS™ Overtemperature protection Over and undervoltage protection Reverse battery protection Low charge pump noise Loss of ground protection ■ ■ ■ ■ ■ ■ ■ CMOS logic capability Negative load clamping Overload protection ESD protection for all pins Diagnostic status indication Operating voltage down to 5.5 V Current limitation. 1.3 Applications ■ 12 and 24V grounded loads ■ Inductive loads ■ High inrush current loads ■ Replacement for relays and fuses. 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Min Max Unit RBLon on-state resistance at 25 °C - 100 mΩ IL continuous load current - 8.5 A IL(nom) nominal load current (ISO) 3.6 - A IL(lim) limiting load current 12 24 A VBG operating voltage 5.5 35 V BUK208-50Y; BUK213-50Y Philips Semiconductors Single channel high-side TOPFET™ 2. Pinning information mb mb B S I 1 2 3 4 5 1 5 MBL431 Fig 1. Pinning; SOT426 (D2-PAK). 03pa56 P L G MBL264 Fig 2. Pinning; SOT263B-01. Fig 3. Symbol; (HSS) TOPFETTM. 2.1 Pin description Table 2: Pin description Symbol Pin I/O Description G 1 - circuit common ground I 2 I battery B 3 - S 4 O status L 5 O load - mb - [1] [2] [2] mounting base It is not possible to make a connection to pin 3 of the SOT426 package. The battery is connected to the mounting base. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09384 Product data input [1] [2] Rev. 02 — 06 June 2002 2 of 16 BUK208-50Y; BUK213-50Y Philips Semiconductors Single channel high-side TOPFET™ 3. Block diagram battery 4 status 3/mb VOLTAGE REGULATOR CHARGE PUMP SHORT CIRCUIT PROTECTION POWER MOSFET CURRENT LIMIT OVERVOLTAGE PROTECTION 2 input CONTROL LOGIC UNDERVOLTAGE PROTECTION load LOW CURRENT DETECT 5 TEMPERATURE SENSOR 03pa33 RG 1 ground Fig 4. Elements of the high-side TOPFET switch. 4. Functional description Table 3: Truth table Abbreviations: L = logic LOW; H = logic HIGH; X = don’t care; 0 = condition not present; 1 = condition present; UV = undervoltage; OV = overvoltage; LC = low current or open circuit load; SC = short circuit; OT = overtemperature [1]. Input [1] Supply Load Load Status Operating mode UV OV LC SC OT output L X X X X X OFF H off H 0 0 0 0 0 ON H on & normal H 0 0 1 0 0 ON L on & low current detect H 1 0 X X X OFF H supply undervoltage lockout H 0 1 X 0 0 OFF H supply overvoltage shutdown H 0 0 0 1 X OFF L SC tripped H 0 0 0 0 1 OFF L OT shutdown The status will continue to indicate OT (even if the input goes LOW) until the device cools below the reset threshold. See “Overtemperature protection” characteristics in Table 6. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09384 Product data Rev. 02 — 06 June 2002 3 of 16 BUK208-50Y; BUK213-50Y Philips Semiconductors Single channel high-side TOPFET™ 5. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VBG continuous supply voltage IL continuous load current Tmb ≤ 112 °C Tmb ≤ 25 °C Min Max Unit - 50 V - 8.5 A Ptot total power dissipation - 48 W Tstg storage temperature −55 +175 °C Tj junction temperature - 150 °C Tmb mounting base temperature - 260 °C - 16 V - 32 V [2] 3.3 - kΩ [3] 3.3 - kΩ −5 +5 mA −50 +50 mA −5 +5 mA δ ≤ 0.1; tp = 300 µs −50 +50 mA Tj = 150 °C prior to turn-off; IL = 2 A - 100 mJ Human body model; C = 100 pF; R = 1.5 kΩ - 2 kV during soldering (≤ 10 s) Reverse battery voltage VBG continuous reverse voltage VBG repetitive reverse voltage [1] External resistor external resistor RI RS Input current II continuous current II repetitive peak current δ ≤ 0.1; tp = 300 µs Status current IS continuous current IS repetitive peak current Inductive load clamping EBL(CL) non-repetitive clamping energy Electrostatic discharge Vesd [1] [2] [3] electrostatic discharge voltage Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load must limit the reverse current. The internal ground resistor limits the reverse battery ground current. To limit input current during reverse battery and transient overvoltages. To limit status current during reverse battery and transient overvoltages. 6. Thermal characteristics Table 5: Thermal characteristics Symbol Parameter Rth(j-mb) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from junction to mounting base - 2.1 2.6 K/W thermal resistance from junction to mounted on printed circuit board; ambient minimum footprint; SOT426 - - 50 K/W © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09384 Product data Rev. 02 — 06 June 2002 4 of 16 BUK208-50Y; BUK213-50Y Philips Semiconductors Single channel high-side TOPFET™ 7. Static characteristics Table 6: Static characteristics Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IG = 1 mA; Figure 6 50 55 65 V Clamping voltage VBG battery-ground voltage VBL battery-load voltage IL = IG = 1 mA 50 55 65 V VLG negative load-ground IL = 10 mA; Figure 12 and 14 −18 −23 −28 V VLG negative load voltage IL = 2 A; tp = 300 µs −20 −25 −30 V 5.5 - 35 V Tmb = 150 °C - - 20 µA Tmb = 25 °C - 0.1 2 µA Tmb = 150 °C - - 20 µA Tmb = 25 °C - 0.1 1 µA [1] Supply voltage VBG operating range battery-ground quiescent current VLG = 0 V; Figure 10 Current IB IL off-state load current [2] VBL = VBG IG operating current Figure 6 IL(nom) nominal load current (ISO) VBL = 0.5 V; Tmb = 85 °C - 2 4 mA 3.6 - - A Tmb = 25 °C - 80 100 mΩ Tmb = 150 °C - - 200 mΩ - 100 125 mΩ [3] Resistance [4] RBLon on-state resistance 9 ≤ VBG ≤ 35 V; IL = 2 A; Figure 5 VBG = 6 V; IL = 2 A Tmb = 25 °C Tmb = 150 °C - - 250 mΩ internal ground resistance IG = 10 mA 95 150 190 Ω II input current VIG = 5 V 20 90 160 µA RG Input [5] VIG input clamping voltage II = 200 µA 5.5 7 8.5 V VIG(ON) input turn-on threshold voltage Figure 9 - 2.4 3 V VIG(OFF) input turn-off threshold voltage 1.5 2.1 - V ∆VIG input turn-on threshold hysteresis - 0.3 - V II(ON) input turn-on current VIG = 3 V - - 100 µA II(OFF) input turn-off current VIG = 1.5 V 10 - - µA Tmb = −40 to +150 °C 90 - 600 mA Tmb = 25 °C; Figure 15 150 300 450 mA - 60 - mA 2 4.2 5.5 V Low current detection [6][9] IL(LC) low current detection threshold ∆IL(LC) hysteresis Undervoltage VBG(UV) [9] [7] low supply threshold voltage © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09384 Product data Rev. 02 — 06 June 2002 5 of 16 BUK208-50Y; BUK213-50Y Philips Semiconductors Single channel high-side TOPFET™ Table 6: Static characteristics…continued Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified. Symbol Parameter Conditions ∆VBG(UV) hysteresis Overvoltage VBG(OV) Min Typ Max Unit - 0.5 - V 40 45 50 V - 1 - V [9] [8] high supply threshold voltage ∆VBG(OV) hysteresis Overload protection [9] IL(lim) limiting load current Short circuit load protection VBL(TO) VBG ≥ 9 V; VBL = VBG; Figure 8 [10] 12 18 24 A VBG = 16 V; Figure 11 [11] 8 10 12 V 15 20 25 V 150 170 190 °C - 10 - °C 5.5 7 8.5 V Tmb = −40 °C - - 1 V Tmb = 25 °C - 0.7 0.8 V - - 15 µA - 0.1 1 µA - 47 - kΩ [9][10] battery load threshold voltage VBG = 35 V Overtemperature protection [9][10] Tj(TO) threshold junction temperature ∆Tj(TO) hysteresis [12] Status [5][9] VSG status clamping voltage IS = 100 µA VSG status low voltage IS = 100 µA; Figure 7 status leakage current IS VSG = 5 V Tmb = 150 °C Tmb = 25 °C external pull-up resistor RS [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] VSG = 5 V [13] For a high-side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This is the current drawn from the supply when the input is LOW, and includes leakage current to the load. Defined as in ISO 10483-1. For comparison purposes only. The supply and input voltages for the RBLon tests are continuous. The specified pulse duration is tp = 300 µs, and refers only to the applied load current. 9 V ≤ VBG ≤ 16 V 9 V ≤ VBG ≤ 35 V. A low current load can be detected in the on-state. Undervoltage sensor causes the device to switch off and reset. Overvoltage sensor causes the device to switch off to protect the load. See Table 3 “Truth table” 5.5 V ≤ VBG ≤ 35 V The battery to load threshold voltage for short circuit is approximately proportional to the battery supply voltage. After cooling below the reset temperature the switch will resume normal operation. The status output is an open drain transistor and requires an external pull-up circuit to indicate a logic HIGH © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09384 Product data Rev. 02 — 06 June 2002 6 of 16 BUK208-50Y; BUK213-50Y Philips Semiconductors Single channel high-side TOPFET™ 03pa54 200 RBLon (mΩ) Tj = 150 °C 160 120 Tj = 25 °C 80 Tj = −40 °C 40 0 20 10 0 30 40 VBG (V) IL = 2 A; VIG = 5 V Fig 5. Battery-load on-state resistance as a function of battery-ground voltage; typical values. 03pa55 4 IG (mA) clamping 3 overvoltage shutdown undervoltage shutdown Tj = −40 °C Tj = 25 °C 2 Tj = 150 °C 1 0 0 25 50 VBG (V) 75 VIG = 5 V Fig 6. Supply current characteristics: battery-ground operating current as a function of battery-ground voltage; typical values. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09384 Product data Rev. 02 — 06 June 2002 7 of 16 BUK208-50Y; BUK213-50Y Philips Semiconductors Single channel high-side TOPFET™ 03pa39 03pa38 4 20 IL (A) IS (mA) 3 15 2 10 1 5 0 0 3 2 1 0 4 VSG (V) VBL(TO) 0 10 5 15 20 VBL (V) VBG = 13 V; VIG = 5 V; Tj = 25 °C VBG = 16 V; VIG = 5 V; Tj = 25 °C (the device trips after ±200 µs, and the status goes LOW). Fig 7. Status current as a function of status-ground voltage; typical values. 03pa36 3.5 Fig 8. Load current limiting as a function of battery-load voltage; typical values. 03pa37 2.5 IB (µA) VIG (V) 3 2 max 1.5 2.5 VIG (ON) 2 1 VIG (OFF) 1.5 1 -50 0.5 min 0 50 100 150 200 Tj (°C) 9 V ≤ VBG ≤ 16 V 0 -50 50 100 200 150 Tj (°C) VBG = 16 V Fig 9. Input-source threshold voltage as a function of junction temperature. Fig 10. Supply quiescent current as a function of junction temperature; typical values. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09384 Product data 0 Rev. 02 — 06 June 2002 8 of 16 BUK208-50Y; BUK213-50Y Philips Semiconductors Single channel high-side TOPFET™ 03pa40 30 VBL(TO) max (V) typ 20 min 10 0 10 0 20 30 50 40 VBG (V) VIG = 5 V; −40 °C ≤ Tj ≤ +150 °C Fig 11. Battery-load threshold voltage as a function of battery-ground voltage. 8. Dynamic characteristics Table 7: Switching characteristics Tmb = 25 °C; VBG = 13 V; resistive load RL = 13 Ω. Figure 13 Symbol Parameter Conditions Min Typ Max Unit to 10% VL - 50 80 µs Turn-on measured from the input going HIGH td(on) turn-on delay time dV/dton rising slew rate 30 to 70% VL - 0.5 1.0 V/µs ton turn-on switching time to 90% VL - 85 160 µs to 90% VL - 50 80 µs Turn-off measured from the input going LOW td(off) turn-off delay time dV/dtoff falling slew rate 70 to 30% VL - 0.8 1.2 V/µs toff turn-off switching time to 10% VL - 70 120 µs Table 8: Status response times Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Measured from when the input goes HIGH td(sc) short circuit response time VBL > VBL(TO); Figure 16 - 180 250 µs td(lc) low current detect response time IL < IL(LC); Figure 15 - 200 - µs © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09384 Product data Rev. 02 — 06 June 2002 9 of 16 BUK208-50Y; BUK213-50Y Philips Semiconductors Single channel high-side TOPFET™ Table 9: Capacitances Tmb = 25 °C; f = 1 MHz; VIG = 0 V. Symbol Parameter Conditions Min Typ Max Unit Cig input capacitance VBG = 13 V - 15 20 pF Cbl output capacitance VBL = 13 V - 130 185 pF Csg status capacitance VSG = 5 V - 11 15 pF ton toff 90% VL dV/dton dV/dtoff 10% 0V RS 5V VBG RI VSG P 0V VSG LL VL VIG 5V VIG RL 0 03pa51 03pa45 VBG = 13 V; VIG = 5 V and Tj = 25 °C Fig 12. Schematic drawing of the switching circuit. VL Fig 13. Resistive switching waveforms and definitions. 0V IL(LC) EBL(CL) ton IL toff 90% VL 0V 0V 5V VSG 10% td(lc) 5V 0.7 V 0V VSG 0.7 V 0V 5V 5V VIG VIG 0 0 03pa50 03pa48 Fig 14. Switching a large inductive load. Fig 15. Low current detection waveforms. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09384 Product data Rev. 02 — 06 June 2002 10 of 16 BUK208-50Y; BUK213-50Y Philips Semiconductors Single channel high-side TOPFET™ td(sc) IL 0V 5V VSG 0.7 V 0V 5V VIG 0 03pa49 VBL ≥ VBL(TO) Fig 16. Short circuit protection waveforms. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09384 Product data Rev. 02 — 06 June 2002 11 of 16 BUK208-50Y; BUK213-50Y Philips Semiconductors Single channel high-side TOPFET™ 9. Package outline Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads (one lead cropped) SOT426 A A1 E D1 mounting base D HD 3 1 2 4 e e Lp 5 b e c e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 1.70 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-12-14 99-06-25 SOT426 Epoxy meets UL94 V0 at 1/8’’. Net mass: 1.5g. For soldering guidelines and surface mount footprint design, please refer to Data Handbook SC18. Fig 17. SOT426. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09384 Product data Rev. 02 — 06 June 2002 12 of 16 BUK208-50Y; BUK213-50Y Philips Semiconductors Single channel high-side TOPFET™ Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 lead form option SOT263B-01 E p1 A ∅p A1 q D1 mounting base D L3 L1 R L L4 m 1 L2 5 e b R w M c Q Q1 Q2 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mm 4.5 4.1 A1 b 1.39 0.85 1.27 0.70 c D D1 E 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 e L L1 L2 L3(1) 1.7 9.8 9.7 5.9 5.3 5.2 5.0 2.4 1.6 L4(2) max. m ∅p p1 q Q Q1 Q2 R w 0.5 0.8 0.6 3.8 3.6 4.3 4.1 3.0 2.7 2.0 4.5 8.2 0.5 0.4 Notes 1. Terminal dimensions are uncontrolled in this zone. 2. Positional accuracy of the terminals is controlled in this zone. OUTLINE VERSION SOT263B-01 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION 5-lead (option) TO-220 ISSUE DATE 01-01-11 Refer to mounting instructions for TO-220 packages. Epoxy meets UL94 VO at 1/8’’. Net mass: 2g Fig 18. SOT263B-01. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09384 Product data Rev. 02 — 06 June 2002 13 of 16 BUK208-50Y; BUK213-50Y Philips Semiconductors Single channel high-side TOPFET™ 10. Revision history Table 10: Revision history Rev Date 02 20020606 CPCN Description - Product data (9397 750 09384); supersedes Product specification BUK208-50Y_1 (Rev 2.000) of March 2001 and Product specification BUK213-50Y_1 (Rev 2.000) of March 2001. Modifications: • The format of this specification has been redesigned to comply with Philips Semiconductors new presentation and information standard. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09384 Product data Rev. 02 — 06 June 2002 14 of 16 BUK208-50Y; BUK213-50Y Philips Semiconductors Single channel high-side TOPFET™ 11. Data sheet status Data sheet status[1] Product status[2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Trademarks TOPFET — is a trademark of Koninklijke Philips Electronics N.V. TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09384 Rev. 02 — 06 June 2002 15 of 16 Philips Semiconductors BUK208-50Y; BUK213-50Y Single channel high-side TOPFET™ Contents 1 1.1 1.2 1.3 1.4 2 2.1 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 © Koninklijke Philips Electronics N.V. 2002. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 06 June 2002 Document order number: 9397 750 09384