TEA152x SMPS ICs for low-power systems Rev. 03 — 23 March 2009 Product data sheet 1. General description The TEA152x family STARplug is a Switched Mode Power Supply (SMPS) controller IC that operates directly from the rectified universal mains. It is implemented in the high-voltage EZ-HV SOI process, combined with a low-voltage BiCMOS process. The device includes a high-voltage power switch and a circuit for start-up directly from the rectified mains voltage. A dedicated circuit for valley switching is built in, which makes a very efficient slim-line electronic power plug concept possible. In its most basic version of application, the TEA152x family acts as a voltage source. Here, no additional secondary electronics are required. A combined voltage and current source can be realized with minimum costs for external components. Implementation of the TEA152x family renders an efficient and low cost power supply system. 2. Features n Designed for general purpose supplies up to 30 W n Integrated power switch: u TEA1520x: 48 Ω; 650 V u TEA1521x: 24 Ω; 650 V u TEA1522x: 12 Ω; 650 V u TEA1523P: 6.5 Ω; 650 V n Operates from universal AC mains supplies (80 V to 276 V) n Adjustable frequency for flexible design n RC oscillator for load insensitive regulation loop constant n Valley switching for minimum switch-on loss n Frequency reduction at low power output makes low standby power possible (< 100 mW) n Adjustable overcurrent protection n Undervoltage protection n Temperature protection n Short-circuit winding protection n Simple application with both primary and secondary (opto) feedback n Available in DIP8 and SO14 packages TEA152x NXP Semiconductors SMPS ICs for low-power systems 3. Applications n n n n n n n n Chargers Adapters Set Top Box (STB) DVD CD(R) TV/monitor standby supplies PC peripherals Microcontroller supplies in home applications and small portable equipment, etc. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Vdrain drain voltage (DMOS power transistor) Tj > 0 °C −0.4 - +650 V RDSon drain-source on-state resistance Tj = 25 °C - 48 55.2 Ω Tj = 100 °C - 68 78.2 Ω Isource = −0.06 A TEA1520x Isource = −0.125 A TEA1521x Tj = 25 °C - 24 27.6 Ω Tj = 100 °C - 34 39.1 Ω Tj = 25 °C - 12 13.8 Ω Tj = 100 °C - 17 19.6 Ω Tj = 25 °C - 6.5 7.5 Ω Tj = 100 °C - 9.0 10.0 Ω −0.4 - +40 V 10 100 200 kHz - 1.5 2 mA −40 - +85 °C Isource = −0.25 A TEA1522x Isource = −0.50 A TEA1523P VCC supply voltage fosc oscillator frequency Idrain current on pin DRAIN Tamb ambient temperature continuous Vdrain > 60 V; no auxiliary supply TEA152X_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 23 March 2009 2 of 17 TEA152x NXP Semiconductors SMPS ICs for low-power systems 5. Ordering information Table 2. Ordering information Type number Package Name Description Version TEA1520P DIP8 plastic dual in-line package; 8 leads (300 mil) SOT97-1 TEA1521P DIP8 plastic dual in-line package; 8 leads (300 mil) SOT97-1 TEA1522P DIP8 plastic dual in-line package; 8 leads (300 mil) SOT97-1 TEA1523P DIP8 plastic dual in-line package; 8 leads (300 mil) SOT97-1 TEA1520T SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 TEA1521T SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 TEA1522T SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 6. Block diagram VCC 1 (1) 8 (14) SUPPLY DRAIN VALLEY TEA152x GND 2 (2, 3, 4, 5, 9, 10) 7 (12, 13) n.c. LOGIC 100 mV PWM stop RC 3 (6) OSCILLATOR PROTECTION LOGIC low freq F 6 (11) THERMAL SHUTDOWN POWER-UP RESET 1.8 SOURCE blank U overcurrent 4 (7) 0.5 V 2.5 V REG 5 (8) 10x AUX short circuit winding 0.75 V mgt419 Pin numbers without parenthesis refer to DIP8 packages and within parenthesis refer to SO14 packages. Fig 1. Block diagram TEA152X_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 23 March 2009 3 of 17 TEA152x NXP Semiconductors SMPS ICs for low-power systems 7. Pinning information 7.1 Pinning VCC 1 GND 2 8 DRAIN 7 n.c. 6 SOURCE 5 AUX TEA152xP RC 3 REG 4 VCC 1 14 DRAIN GND 2 13 n.c. GND 3 12 n.c. GND 4 GND 5 RC 6 REG 7 001aae137 Fig 2. TEA152xT 11 SOURCE 10 GND 9 GND 8 AUX 001aae138 Pin configuration DIP8 Fig 3. Pin configuration SO14 7.2 Pin description Table 3. Symbol Pin description Pin Description DIP8 SO14 VCC 1 1 supply voltage GND 2 2 ground GND - 3 ground GND - 4 ground GND - 5 ground RC 3 6 frequency setting REG 4 7 regulation input AUX 5 8 input for voltage from auxiliary winding for timing (demagnetization) GND - 9 ground GND - 10 ground SOURCE 6 11 source of internal MOS switch n.c. 7 12 not connected n.c. - 13 not connected DRAIN 8 14 drain of internal MOS switch; input for start-up current and valley sensing TEA152X_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 23 March 2009 4 of 17 TEA152x NXP Semiconductors SMPS ICs for low-power systems 8. Functional description The TEA152x family is the heart of a compact flyback converter, with the IC placed at the primary side. The auxiliary winding of the transformer can be used for indirect feedback to control the isolated output. This additional winding also powers the IC. A more accurate control of the output voltage and/or current can be implemented with an additional secondary sensing circuit and opto coupler feedback. The TEA152x family uses voltage mode control. The frequency is determined by the maximum transformer demagnetizing time and the time of the oscillator. In the first case, the converter operates in the Self Oscillating Power Supply (SOPS) mode. In the latter case, it operates at a constant frequency, which can be adjusted with external components RRC and CRC. This mode is called Pulse Width Modulation (PWM). Furthermore, a primary stroke is started only in a valley of the secondary ringing. This valley switching principle minimizes capacitive switch-on losses. 8.1 Start-up and undervoltage lockout Initially, the IC is self supplying from the rectified mains voltage. The IC starts switching as soon as the voltage on pin VCC passes the VCC(start) level. The supply is taken over by the auxiliary winding of the transformer as soon as VCC is high enough and the supply from the line is stopped for high efficiency operation. When for some reason the auxiliary supply is not sufficient, the high-voltage supply also supplies the IC. As soon as the voltage on pin VCC drops below the VCC(stop) level, the IC stops switching and restarts from the rectified mains voltage. 8.2 Oscillator The frequency of the oscillator is set by the external resistor and capacitor on pin RC. The external capacitor is charged rapidly to the VRC(max) level and, starting from a new primary stroke, it discharges to the VRC(min) level. Because the discharge is exponential, the relative sensitivity of the duty factor to the regulation voltage at low duty factor is almost equal to the sensitivity at high duty factors. This results in a more constant gain over the duty factor range compared to PWM systems with a linear sawtooth oscillator. Stable operation at low duty factors is easily realized. For high efficiency, the frequency is reduced as soon as the duty factor drops below a certain value. This is accomplished by increasing the oscillator charge time. To ensure that the capacitor can be charged within the charge time, the value of the oscillator capacitor should be limited to approximately 1 nF. 8.3 Duty factor control The duty factor is controlled by the internal regulation voltage and the oscillator signal on pin RC. The internal regulation voltage is equal to the external regulation voltage (minus 2.5 V) multiplied by the gain of the error amplifier (typically 20 dB which is 10 ×). TEA152X_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 23 March 2009 5 of 17 TEA152x NXP Semiconductors SMPS ICs for low-power systems 8.4 Valley switching A new cycle is started when the primary switch is switched on (see Figure 4). After a certain time (determined by the oscillator voltage RC and the internal regulation level), the switch is turned off and the secondary stroke starts. The internal regulation level is determined by the voltage on pin REG. After the secondary stroke, the drain voltage shows an oscillation with a frequency of approximately: 1 ----------------------------------------------2 × π × (L p × C p) (1) where: Lp = primary self inductance Cp = parasitic capacitance on drain node As soon as the oscillator voltage is high again and the secondary stroke has ended, the circuit waits for a low drain voltage before starting a new primary stroke. Figure 4 shows the drain voltage together with the valley signal, the signal indicating the secondary stroke and the RC voltage. The primary stroke starts some time before the actual valley at low ringing frequencies, and some time after the actual valley at high ringing frequencies. primary stroke secondary stroke secondary ringing drain valley secondary stroke A RC oscillator regulation level B mgt423 A: Start of new cycle with valley switching. B: Start of new cycle in a classical PWM system. Fig 4. Signals for valley switching TEA152X_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 23 March 2009 6 of 17 TEA152x NXP Semiconductors SMPS ICs for low-power systems Figure 5 shows a typical curve for a reflected output voltage N × Vo of 80 V. This voltage is the output voltage Vo (see Figure 6) transferred to the primary side of the transformer with the factor N (determined by the turns ratio of the transformer). Figure 5 shows that the system switches exactly at minimum drain voltage for ringing frequencies of 480 kHz, thus reducing the switch-on losses to a minimum. At 200 kHz, the next primary stroke is started at 33° before the valley. The switch-on losses are still reduced significantly. mgt424 40 phase (°) 20 0 −20 −40 0 200 400 600 800 f (kHz) Fig 5. Typical phase of drain ringing at switch-on (at N × Vo = 80 V) 8.5 Demagnetization The system operates in discontinuous conduction mode all the time. As long as the secondary stroke has not ended, the oscillator will not start a new primary stroke. During the first tsuppr seconds, demagnetization recognition is suppressed. This suppression may be necessary in applications where the transformer has a large leakage inductance and at low output voltages. 8.6 Minimum and maximum duty factor The minimum duty factor of the switched mode power supply is 0 %. The maximum duty factor is set to 75 % (typical value at 100 kHz oscillation frequency). 8.7 OverCurrent Protection (OCP) The cycle-by-cycle peak drain current limit circuit uses the external source resistor RI to measure the current. The circuit is activated after the leading edge blanking time tleb. The protection circuit limits the source voltage to Vsource(max), and thus limits the primary peak current. 8.8 Short-circuit winding protection The short-circuit winding protection circuit is also activated after the leading edge blanking time. If the source voltage exceeds the short-circuit winding protection voltage Vswp, the IC stops switching. Only a power-on reset will restart normal operation. The short-circuit winding protection also protects in case of a secondary diode short circuit. TEA152X_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 23 March 2009 7 of 17 TEA152x NXP Semiconductors SMPS ICs for low-power systems 8.9 OverTemperature Protection (OTP) An accurate temperature protection is provided in the device. When the junction temperature exceeds the thermal shut-down temperature, the IC stops switching. During thermal protection, the IC current is lowered to the start-up current. The IC continues normal operation as soon as the over temperature situation has disappeared. 8.10 OverVoltage Protection (OVP) Overvoltage protection can be achieved in the application by pulling pin REG above its normal operation level. The current primary stroke is terminated immediately, and no new primary stroke is started until the voltage on pin REG drops to its normal operation level. Pin REG has an internal clamp. The current feed into this pin must be limited. 8.11 Output characteristics of complete power plug Typical characteristics: • Output power: A wide range of output power levels can be handled by choosing the RDS(on) and package of the TEA152x family. Power levels up to 30 W can be realized. • Accuracy: The accuracy of the complete converter, functioning as a voltage source with primary sensing, is approximately 8 % (mainly dependent on the transformer coupling). The accuracy with secondary sensing is defined by the accuracy of the external components. For safety requirements in case of opto coupler feedback loss, the primary sensing remains active when an overvoltage circuit is connected. • Efficiency: An efficiency of 75 % at maximum output power can be achieved for a complete converter designed for universal mains. • Ripple: A minimum ripple is obtained in a system designed for a maximum duty factor of 50 % under normal operating conditions, and a minimized dead time. The magnitude of the ripple in the output voltage is determined by the frequency and duty factor of the converter, the output current level and the value and ESR of the output capacitor. 8.12 Input characteristics of complete power plug Typical characteristics: • The input voltage range comprises the universal AC mains (80 V to 276 V). TEA152X_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 23 March 2009 8 of 17 TEA152x NXP Semiconductors SMPS ICs for low-power systems 9. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are measured with respect to ground; positive currents flow into the device; pins VCC and RC are not allowed to be current driven and pins REG and AUX are not allowed to be voltage driven. Symbol Parameter Conditions Min Max Unit VCC supply voltage continuous −0.4 +40 V VRC voltage on pin RC −0.4 +3 V VSOURCE voltage on pin SOURCE DMOS power transistor −0.4 +5 V Vdrain drain voltage (DMOS power transistor) Tj > 0 °C −0.4 +650 V Voltages Currents IREG current on pin REG - 6 mA IAUX current on pin AUX −10 +5 mA Isource source current Idrain TEA1520x −0.25 +0.25 A TEA1521x −0.5 +0.5 A TEA1522x −1 +1 A TEA1523P −2 +2 A TEA1520x −0.25 +0.25 A TEA1521x −0.5 +0.5 A TEA1522x −1 +1 A TEA1523P −2 +2 A drain current General total power dissipation Ptot DIP8 package Tamb < 45 °C - 1.0 W SO14 package Tamb < 50 °C - 1.0 W Tstg storage temperature −55 +150 °C Tamb ambient temperature −40 +85 °C Tj junction temperature °C Vesd electrostatic discharge voltage −40 +145 human body model [1] - ±2500 V machine model [2] - ±200 V [1] Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor. All pins are 2500 V maximum, except pin DRAIN, which is 1000 V maximum. [2] Machine model: equivalent to discharging a 200 pF capacitor through a 0.75 µH coil and a 10 Ω series resistor. TEA152X_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 23 March 2009 9 of 17 TEA152x NXP Semiconductors SMPS ICs for low-power systems 10. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-a) [1] Conditions Typ Unit DIP8 package 100 K/W SO14 package 91 K/W [1] thermal resistance from junction to ambient in free air Thermal resistance Rth(j-a) can be lower when the GND pins are connected to sufficient copper area on the printed-circuit board. See the TEA152x application notes for details. 11. Characteristics Table 6. Characteristics Tamb = 25 °C; no over temperature; all voltages are measured with respect to ground; currents are positive when flowing into the IC; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Supply ICC(oper) operating supply current normal operation - 1.3 1.9 mA ICC(startup) start-up supply current start-up - 180 400 µA ICC(ch) charge supply current Vdrain > 60 V −6 −4 −3 mA VCC(start) start voltage 9 9.5 10 V VCC(stop) stop supply voltage undervoltage lockout 7.0 7.5 8.0 V Idrain current on pin DRAIN Vdrain > 60 V no auxiliary supply - 1.5 2 mA with auxiliary supply - 30 125 µA - 0 - % - 75 - % 50 100 150 mV 1.0 1.5 2.0 µs Pulse width modulator δmin minimum duty factor δmax maximum duty cycle f = 100 kHz SOPS Vdet(demag) demagnetization detection voltage tsup(xfmr_ring) transformer ringing suppression time start of 2nd stroke RC oscillator VRC(min) minimum voltage on pin RC 60 75 90 mV VRC(max) maximum voltage on pin RC 2.4 2.5 2.6 V tch(RC) charge time on pin RC - 1 - µs fosc oscillator frequency 10 100 200 kHz 2.4 2.5 2.6 V Duty factor regulator: pin REG VREG voltage on pin REG Gv voltage gain error amplifier - 20 - dB Vclamp(REG) clamp voltage on pin REG IREG = 6 mA - - 7.5 V TEA152X_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 23 March 2009 10 of 17 TEA152x NXP Semiconductors SMPS ICs for low-power systems Table 6. Characteristics …continued Tamb = 25 °C; no over temperature; all voltages are measured with respect to ground; currents are positive when flowing into the IC; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Valley switching (∆V/∆t)vrec valley recognition voltage change with time fvalley ringing frequency for valley switching td(vrec-swon) valley recognition to switch-on delay time N × Vo = 100 V −102 - +102 V/µs 200 550 800 kHz - 150 - ns Current and short-circuit winding protection Vsource(max) maximum source voltage ∆V/∆t = 0.1 V/µs 0.47 0.50 0.53 V td(prop) delay from detecting Vsource(max) to switch-off ∆V/∆t = 0.5 V/µs - 160 185 ns Vswp short circuit winding protection voltage ∆V/∆t = 0.5 V/µs 0.7 0.75 0.8 V tleb leading edge blanking time 250 350 450 ns FET output stage IL(drain) drain leakage current Vdrain = 650 V - - 125 µA VBR(DRAIN) breakdown voltage on pin DRAIN Tj > 0 °C 650 - - V RDSon drain-source on-state resistance Tj = 25 °C - 48 55.2 Ω Tj = 100 °C - 68 78.2 Ω Tj = 25 °C - 24 27.6 Ω Tj = 100 °C - 34 39.1 Ω Tj = 25 °C - 12 13.8 Ω Tj = 100 °C - 17 19.6 Ω Tj = 25 °C - 6.5 7.5 Ω Tj = 100 °C - 9.0 10.0 Ω - 75 - ns TEA1520x TEA1521x TEA1522x TEA1523P tf(DRAIN) fall time on pin DRAIN Isource = −0.06 A Isource = −0.125 A Isource = −0.25 A Isource = −0.50 A Vi = 300 V; no external capacitor at drain Temperature protection Tprot(max) maximum threshold temperature 150 160 170 °C Tprot(hys) hysteresis of protection temperature - 2 - °C TEA152X_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 23 March 2009 11 of 17 TEA152x NXP Semiconductors SMPS ICs for low-power systems 12. Application information LF D5 Z1 CF1 Vo C5 D1 CF2 mains R1 R2 CVCC VCC GND 1 8 2 7 RRC RC R4 CRC REG D2 TEA152xP 3 6 4 5 DRAIN C6 - Ycap n.c. SOURCE AUX RI RAUX R3 mgt425 Fig 6. Primary sensed application; configuration for TEA152xP Further application information can be found in the TEA152x application notes. 13. Test information 13.1 Quality information This product has been qualified to the appropriate Automotive Electronics Council (AEC) standard Q100 or Q101 and is suitable for use in automotive applications. TEA152X_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 23 March 2009 12 of 17 TEA152x NXP Semiconductors SMPS ICs for low-power systems 14. Package outline DIP8: plastic dual in-line package; 8 leads (300 mil) SOT97-1 ME seating plane D A2 A A1 L c Z w M b1 e (e 1) b MH b2 5 8 pin 1 index E 1 4 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 b2 c D (1) E (1) e e1 L ME MH w Z (1) max. mm 4.2 0.51 3.2 1.73 1.14 0.53 0.38 1.07 0.89 0.36 0.23 9.8 9.2 6.48 6.20 2.54 7.62 3.60 3.05 8.25 7.80 10.0 8.3 0.254 1.15 inches 0.17 0.02 0.13 0.068 0.045 0.021 0.015 0.042 0.035 0.014 0.009 0.39 0.36 0.26 0.24 0.1 0.3 0.14 0.12 0.32 0.31 0.39 0.33 0.01 0.045 Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. Fig 7. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT97-1 050G01 MO-001 SC-504-8 EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-13 Package outline SOT97-1 (DIP8) TEA152X_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 23 March 2009 13 of 17 TEA152x NXP Semiconductors SMPS ICs for low-power systems SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 D E A X c y HE v M A Z 8 14 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 7 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 8.75 8.55 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.35 0.014 0.0075 0.34 0.16 0.15 0.010 0.057 inches 0.069 0.004 0.049 0.05 0.244 0.039 0.041 0.228 0.016 0.028 0.024 0.01 0.01 0.028 0.004 0.012 θ o 8 o 0 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. Fig 8. REFERENCES OUTLINE VERSION IEC JEDEC SOT108-1 076E06 MS-012 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-19 Package outline SOT108-1 (SO14) TEA152X_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 23 March 2009 14 of 17 TEA152x NXP Semiconductors SMPS ICs for low-power systems 15. Abbreviations Table 7. Abbreviations Acronym Description BiCMOS Bipolar Complementary Metal Oxide Semiconductor DMOS Diffusion Metal-Oxide Semiconductor ESR Equivalent Series Resistance EZ-HV SOI Easy High Voltage Silicon-On-Insulator FET Field-Effect Transistor PWM Pulse Width Modulation SMPS Switched Mode Power Supply SOPS Self Oscillating Power Supply 16. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes TEA152X_3 20090323 Product data sheet - TEA152X_FAM_2 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • Legal texts have been adapted to the new company name where appropriate. The minimum value of Tamb has changed in Table 1 and Table 4. The minimum value of Tj has changed in Table 4. TEA152X_FAM_2 20060125 Product data sheet - TEA152X_FAMILY_1 TEA152X_FAMILY_1 20000908 Product specification - - TEA152X_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 23 March 2009 15 of 17 TEA152x NXP Semiconductors SMPS ICs for low-power systems 17. Legal information 17.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 17.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 17.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 17.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. EZ-HV — is a trademark of NXP B.V. STARplug — is a trademark of NXP B.V. 18. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] TEA152X_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 23 March 2009 16 of 17 TEA152x NXP Semiconductors SMPS ICs for low-power systems 19. Contents 1 2 3 4 5 6 7 7.1 7.2 8 8.1 8.2 8.3 8.4 8.5 8.6 8.7 8.8 8.9 8.10 8.11 8.12 9 10 11 12 13 13.1 14 15 16 17 17.1 17.2 17.3 17.4 18 19 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 Functional description . . . . . . . . . . . . . . . . . . . 5 Start-up and undervoltage lockout . . . . . . . . . . 5 Oscillator. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Duty factor control. . . . . . . . . . . . . . . . . . . . . . . 5 Valley switching. . . . . . . . . . . . . . . . . . . . . . . . . 6 Demagnetization. . . . . . . . . . . . . . . . . . . . . . . . 7 Minimum and maximum duty factor . . . . . . . . . 7 OverCurrent Protection (OCP) . . . . . . . . . . . . . 7 Short-circuit winding protection . . . . . . . . . . . . 7 OverTemperature Protection (OTP) . . . . . . . . . 8 OverVoltage Protection (OVP) . . . . . . . . . . . . . 8 Output characteristics of complete power plug. 8 Input characteristics of complete power plug . . 8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal characteristics. . . . . . . . . . . . . . . . . . 10 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 10 Application information. . . . . . . . . . . . . . . . . . 12 Test information . . . . . . . . . . . . . . . . . . . . . . . . 12 Quality information . . . . . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 23 March 2009 Document identifier: TEA152X_3