BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation Rev. 04 — 4 February 2008 Product data sheet 1. Product profile 1.1 General description Passivated, guaranteed commutation triacs in a plastic package. The ‘sensitive gate’ E and ER series are intended for interfacing with low power drivers, including microcontrollers. The high commutation B series are designed to commutate the full RMS current at the maximum junction temperature without the aid of a snubber. 1.2 Features n Suitable for interfacing with low power drivers, including microcontrollers n Reverse pinning option (ER type) 1.3 Applications n Motor controls n Solenoid drivers 1.4 Quick reference data n n n n ITSM ≤ 12.5 A IT(RMS) ≤ 1 A VDRM ≤ 600 V (BTA201-600B/E) VDRM ≤ 800 V (BTA201-800B/E/ER) n n n n IGT ≤ 50 mA (BTA201-600B/800B) IGT ≤ 10 mA (BTA201-600E/800E/ER) IGT ≥ 5 mA (BTA201-600B/800B) IGT ≥ 1 mA (BTA201-600E/800E/ER) 2. Pinning information Table 1. Pinning Pin Description Simplified outline Graphic symbol B and E series 1 main terminal 2 (T2) 2 gate (G) T2 3 main terminal 1 (T1) sym051 G ER series 1 main terminal 1 (T1) 2 gate (G) 3 main terminal 2 (T2) T1 321 SOT54 (TO-92) BTA201 series B, E and ER NXP Semiconductors 1 A Three-quadrant triacs high commutation 3. Ordering information Table 2. Ordering information Type number BTA201-600B Package Name Description Version TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 BTA201-600E BTA201-800B BTA201-800E BTA201-800ER 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage Conditions Min Max Unit BTA201-600B [1] - 600 V BTA201-600E [1] - 600 V BTA201-800B - 800 V BTA201-800E - 800 V BTA201-800ER - 800 V - 1 A t = 20 ms - 12.5 A t = 16.7 ms IT(RMS) RMS on-state current full sine wave; Tlead ≤ 54.3 °C; see Figure 4 and 5 ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 - 13.7 A I2t I2t for fusing tp = 10 ms - 0.78 A2s dIT/dt rate of rise of on-state current ITM = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.1 W Tstg storage temperature −40 +150 °C Tj junction temperature - 125 °C [1] over any 20 ms period Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. BTA201_SER_B_E_ER_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 4 February 2008 2 of 12 BTA201 series B, E and ER NXP Semiconductors 1 A Three-quadrant triacs high commutation 001aag957 1.5 α Ptot (W) α = 180° α 1.0 120° 90° 60° 30° 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT(RMS) (A) α = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values 001aag959 16 ITSM (A) 12 8 ITSM IT 4 t T Tj(init) = 25 °C max 0 1 102 10 103 number of cycles (n) f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA201_SER_B_E_ER_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 4 February 2008 3 of 12 BTA201 series B, E and ER NXP Semiconductors 1 A Three-quadrant triacs high commutation 003aaa955 103 ITSM IT ITSM (A) t tp Tj(init) = 25 °C max 102 (1) 10 10−5 10−4 10−3 10−2 10−1 tp (s) tp ≤ 20 ms (1) dIT/dt limit Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values 001aag961 3 IT(RMS) (A) 001aag960 1.2 IT(RMS) (A) 1.0 54.3 °C 0.8 2 0.6 0.4 1 0.2 0 10−2 10−1 0 −50 1 10 surge duration (s) 0 50 100 150 Tlead (°C) f = 50 Hz; Tlead ≤ 54.3 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of lead temperature; maximum values BTA201_SER_B_E_ER_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 4 February 2008 4 of 12 BTA201 series B, E and ER NXP Semiconductors 1 A Three-quadrant triacs high commutation 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Rth(j-lead) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from junction to full cycle; see Figure 6 lead half cycle; see Figure 6 - - 60 K/W - - 80 K/W thermal resistance from junction to printed-circuit board ambient mounted; lead length = 4 mm - 150 - K/W 001aag962 102 Zth(j-lead) (K/W) 10 (1) (2) 1 10−1 10−2 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) (1) Unidirectional (2) Bidirectional Fig 6. Transient thermal impedance from junction to lead as a function of pulse width BTA201_SER_B_E_ER_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 4 February 2008 5 of 12 BTA201 series B, E and ER NXP Semiconductors 1 A Three-quadrant triacs high commutation 6. Static characteristics Table 5. Static characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter IGT IL gate trigger current latching current Conditions BTA201-600B BTA201-800B BTA201-600E BTA201-800E BTA201-800ER Unit Min Typ Max Min Typ Max T2+ G+ 5 - 50 1 - 10 mA T2+ G− 5 - 50 1 - 10 mA T2− G− 5 - 50 1 - 10 mA T2+ G+ - - 30 - - 12 mA T2+ G− - - 50 - - 20 mA T2− G− - - 30 - - 12 mA VD = 12 V; IT = 0.1 A; see Figure 8 VD = 12 V; IGT = 0.1 A; see Figure 10 IH holding current VD = 12 V; IGT = 0.1 A; see Figure 11 - - 30 - - 12 mA VT on-state voltage IT = 1.4 A; see Figure 9 - 1.2 1.5 - 1.2 1.5 V VGT gate trigger voltage ID off-state current VD = 12 V; IT = 0.1 A; see Figure 7 - 0.7 1.5 - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 °C 0.2 0.3 - 0.2 0.3 - V VD = VDRM(max); Tj = 125 °C - 0.1 0.5 - 0.1 0.5 mA BTA201_SER_B_E_ER_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 4 February 2008 6 of 12 BTA201 series B, E and ER NXP Semiconductors 1 A Three-quadrant triacs high commutation 7. Dynamic characteristics Table 6. Dynamic characteristics Symbol Parameter Conditions Min Typ Max Min Typ Max dVD/dt rate of rise of off-state voltage VDM = 67 % VDRM(max); Tj = 125 °C; exponential waveform; gate open circuit 1000 - - 600 - - V/µs dIcom/dt rate of change of commutating current VDM = 400 V; Tj = 125 °C; dVcom/dt = 20 V/µs; gate open circuit 12 - - 2.5 - - A/ms VDM = 400 V; Tj = 125 °C; dVcom/dt = 10 V/µs; gate open circuit 16 - - 3.5 - - A/ms ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs - 2 - - 2 - µs gate-controlled turn-on time tgt BTA201-600B BTA201-800B BTA201-600E BTA201-800E BTA201-800ER 001aab101 1.6 003aaa959 3 VGT IGT VGT(25°C) IGT(25°C) 1.2 2 Unit (1) (2) (3) 0.8 1 (3) (2) (1) 0.4 −50 0 50 100 0 −50 150 Tj (°C) 0 50 100 Tj (°C) 150 (1) T2− G− (2) T2+ G− (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature BTA201_SER_B_E_ER_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 4 February 2008 7 of 12 BTA201 series B, E and ER NXP Semiconductors 1 A Three-quadrant triacs high commutation 003aaa960 2 001aab100 3 IT (A) IL IL(25°C) 1.6 2 1.2 (1) (2) 0.8 (3) 1 0.4 0 0 0.4 0.8 1.2 1.6 2 0 −50 0 50 100 150 Tj (°C) VT (V) Vo = 1.02 V; Rs = 0.358 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage 001aab099 3 Fig 10. Normalized latching current as a function of junction temperature IH dVD/dt IH(25°C) (V/µs) 2 003aab834 104 103 (1) (2) 1 0 −50 102 0 50 100 150 10 0 50 Tj (°C) 100 Tj °C 150 Gate open circuit (1) BTA201 series B (2) BTA201 series E and ER Fig 11. Normalized holding current as a function of junction temperature Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values BTA201_SER_B_E_ER_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 4 February 2008 8 of 12 BTA201 series B, E and ER NXP Semiconductors 1 A Three-quadrant triacs high commutation 8. Package outline Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC SOT54 JEDEC JEITA TO-92 SC-43A EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 Fig 13. Package outline SOT54 (TO-92) BTA201_SER_B_E_ER_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 4 February 2008 9 of 12 BTA201 series B, E and ER NXP Semiconductors 1 A Three-quadrant triacs high commutation 9. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BTA201_SER_B_E_ER_4 20080204 Product data sheet - Modifications: BTA201_SER_B_E_ER_3 Modifications: BTA201_SER_B_E_ER_2 Modifications: BTA201_SER_B_E_ER_1 (9397 750 15154) • • • • Figure 3: Changed figure. Section 1.4 “Quick reference data” on page 1: Updated with minimum IGT values added. Table 3 “Limiting values” on page 2: I2t condition, tp; symbol update. Table 5 “Static characteristics” on page 6: Minimum IGT values added. 20070910 Product data sheet - BTA201_SER_B_E_ER_2 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • Legal texts have been adapted to the new company name where appropriate. Descriptive titles have been corrected. Table 3 “Limiting values” on page 2: dIT/dt uprated. Table 6 “Dynamic characteristics” on page 7: dVD/dt uprated. Figure 12 “Critical rate of rise of off-state voltage as a function of junction temperature; minimum values” on page 8: graph updated. 20060113 • • • Product data sheet - BTA201_SER_B_E_ER_1 Figure 4: Figure note corrected Table 6 “Dynamic characteristics” on page 7: Units corrected Figure 12: Figure title corrected 20050825 Product data sheet BTA201_SER_B_E_ER_4 Product data sheet BTA201_SER_B_E_ER_3 - - © NXP B.V. 2008. All rights reserved. Rev. 04 — 4 February 2008 10 of 12 BTA201 series B, E and ER NXP Semiconductors 1 A Three-quadrant triacs high commutation 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 10.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BTA201_SER_B_E_ER_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 4 February 2008 11 of 12 NXP Semiconductors BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 4 February 2008 Document identifier: BTA201_SER_B_E_ER_4