74AHC30; 74AHCT30 8-input NAND gate Rev. 03 — 26 June 2009 Product data sheet 1. General description The 74AHC30; 74AHCT30 is a high-speed Si-gate CMOS device and is pin compatible with Low-power Schottky TTL (LSTTL). It is specified in compliance with JEDEC standard No. 7-A. The 74AHC30; 74AHCT30 provides an 8-input NAND function. 2. Features n n n n Balanced propagation delays All inputs have Schmitt-trigger actions Inputs accept voltages higher than VCC Input levels: u For 74AHC30: CMOS level u For 74AHCT30: TTL level n ESD protection: u HBM JESD22-A114E exceeds 2000 V u MM JESD22-A115-A exceeds 200 V u CDM JESD22-C101C exceeds 1000 V n Multiple package options n Specified from −40 °C to +85 °C and from −40 °C to +125 °C 3. Ordering information Table 1. Ordering information Type number 74AHC30D Package Temperature range Name Description Version −40 °C to +125 °C SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 −40 °C to +125 °C TSSOP14 plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 −40 °C to +125 °C DHVQFN14 plastic dual in-line compatible thermal enhanced very SOT762-1 thin quad flat package; no leads; 14 terminals; body 2.5 × 3 × 0.85 mm 74AHCT30D 74AHC30PW 74AHCT30PW 74AHC30BQ 74AHCT30BQ 74AHC30; 74AHCT30 NXP Semiconductors 8-input NAND gate 4. Functional diagram 1 A 1 2 B 2 3 C 4 D 5 E 6 F 6 11 G 11 12 H 12 3 4 8 Y 8 5 mna489 mna488 Fig 1. & Logic symbol Fig 2. IEC logic symbol A B C D Y E mna490 F G H Fig 3. Logic diagram 74AHC_AHCT30_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 26 June 2009 2 of 14 74AHC30; 74AHCT30 NXP Semiconductors 8-input NAND gate 5. Pinning information 5.1 Pinning 1 A terminal 1 index area 74AHC30 74AHCT30 14 VCC 74AHC30 74AHCT30 B 2 13 n.c. A 1 14 VCC C 3 12 H B 2 13 n.c. D 4 11 G C 3 12 H E 5 D 4 11 G F 6 6 9 n.c. 7 8 Y 8 F GND 10 n.c. 9 Y 10 n.c. 7 5 GND E GND(1) n.c. 001aak237 Transparent top view 001aai162 (1) The die substrate is attached to this pad using conductive die attach material. It can not be used as a supply pin or input. Fig 4. Pin configuration SO14 and TSSOP14 Fig 5. Pin configuration DHVQFN14 5.2 Pin description Table 2. Pin description Symbol Pin Description A 1 data input B 2 data input C 3 data input D 4 data input E 5 data input F 6 data input GND 7 ground (0 V) Y 8 data output n.c. 9 not connected n.c. 10 not connected G 11 data input H 12 data input n.c. 13 not connected VCC 14 supply voltage 74AHC_AHCT30_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 26 June 2009 3 of 14 74AHC30; 74AHCT30 NXP Semiconductors 8-input NAND gate 6. Functional description Table 3. Function table[1] Input Output A B C D E F G H Y L X X X X X X X H X L X X X X X X H X X L X X X X X H X X X L X X X X H X X X X L X X X H X X X X X L X X H X X X X X X L X H X X X X X X X L H H H H H H H H H L [1] H = HIGH voltage level; L = LOW voltage level; X = don’t care. 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage VI input voltage Conditions input clamping current VI < −0.5 V [1] IOK output clamping current VO < −0.5 V or VO > VCC + 0.5 V [1] IO output current VO = −0.5 V to (VCC + 0.5 V) ICC IIK Min Max Unit −0.5 +7.0 V −0.5 +7.0 V −20 - mA −20 +20 mA −25 +25 mA supply current - +75 mA IGND ground current −75 - mA Tstg storage temperature −65 +150 °C Ptot total power dissipation - 500 mW Tamb = −40 °C to +125 °C [2] [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For SO14 packages: above 70 °C the value of Ptot derates linearly at 8 mW/K. For TSSOP14 packages: above 60 °C the value of Ptot derates linearly at 5.5 mW/K. For DHVQFN14 packages: above 60 °C the value of Ptot derates linearly at 4.5 mW/K. 74AHC_AHCT30_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 26 June 2009 4 of 14 74AHC30; 74AHCT30 NXP Semiconductors 8-input NAND gate 8. Recommended operating conditions Table 5. Recommended operating conditions Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions 74AHC30 Min Typ 74AHCT30 Max Min Typ Unit Max VCC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V VI input voltage 0 - 5.5 0 - 5.5 V VO output voltage 0 - VCC 0 - VCC V Tamb ambient temperature −40 +25 +125 −40 +25 +125 °C ∆t/∆V input transition rise and fall rate VCC = 3.3 V ± 0.3 V - - 100 - - - ns/V VCC = 5.0 V ± 0.5 V - - 20 - - 20 ns/V 9. Static characteristics Table 6. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter 25 °C Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max Min Max VCC = 2.0 V 1.5 - - 1.5 - 1.5 - V VCC = 3.0 V 2.1 - - 2.1 - 2.1 - V VCC = 5.5 V 3.85 - - 3.85 - 3.85 - V VCC = 2.0 V - - 0.5 - 0.5 - 0.5 V VCC = 3.0 V - - 0.9 - 0.9 - 0.9 V VCC = 5.5 V - - 1.65 - 1.65 - 1.65 V HIGH-level VI = VIH or VIL output voltage IO = −50 µA; VCC = 2.0 V 1.9 2.0 - 1.9 - 1.9 - V IO = −50 µA; VCC = 3.0 V 2.9 3.0 - 2.9 - 2.9 - V IO = −50 µA; VCC = 4.5 V 4.4 4.5 - 4.4 - 4.4 - V IO = −4.0 mA; VCC = 3.0 V 2.58 - - 2.48 - 2.40 - V IO = −8.0 mA; VCC = 4.5 V 74AHC30 VIH VIL VOH VOL HIGH-level input voltage LOW-level input voltage 3.94 - - 3.80 - 3.70 - V LOW-level VI = VIH or VIL output voltage IO = 50 µA; VCC = 2.0 V - 0 0.1 - 0.1 - 0.1 V IO = 50 µA; VCC = 3.0 V - 0 0.1 - 0.1 - 0.1 V IO = 50 µA; VCC = 4.5 V - 0 0.1 - 0.1 - 0.1 V IO = 4.0 mA; VCC = 3.0 V - - 0.36 - 0.44 - 0.55 V IO = 8.0 mA; VCC = 4.5 V - - 0.36 - 0.44 - 0.55 V - - 0.1 - 1.0 - 2.0 µA II input leakage current VI = 5.5 V or GND; VCC = 0 V to 5.5 V ICC supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V - - 2.0 - 20 - 40 µA CI input capacitance - 3 10 - 10 - 10 pF VI = VCC or GND 74AHC_AHCT30_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 26 June 2009 5 of 14 74AHC30; 74AHCT30 NXP Semiconductors 8-input NAND gate Table 6. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter CO 25 °C Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max Min Max - 4 - - - - - pF output capacitance 74AHCT30 VIH HIGH-level input voltage VCC = 4.5 V to 5.5 V 2.0 - - 2.0 - 2.0 - V VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - - 0.8 - 0.8 - 0.8 V VOH HIGH-level VI = VIH or VIL; VCC = 4.5 V output voltage IO = −50 µA 4.4 4.5 - 4.4 - 4.4 - V 3.94 - - 3.80 - 3.70 - V - 0 0.1 - 0.1 - 0.1 V - - 0.36 - 0.44 - 0.55 V - - 0.1 - 1.0 - 2.0 µA IO = −8.0 mA VOL LOW-level VI = VIH or VIL; VCC = 4.5 V output voltage IO = 50 µA IO = 8.0 mA II input leakage current VI = 5.5 V or GND; VCC = 0 V to 5.5 V ICC supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V - - 2.0 - 20 - 40 µA ∆ICC additional per input pin; supply current VI = VCC − 2.1 V; other pins at VCC or GND; IO = 0 A; VCC = 4.5 V to 5.5 V - - 1.35 - 1.5 - 1.5 mA CI input capacitance - 3 10 - 10 - 10 pF CO output capacitance - 4 - - - - - pF VI = VCC or GND 10. Dynamic characteristics Table 7. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7. Symbol Parameter 25 °C Conditions −40 °C to +85 °C Min Typ[1] Max −40 °C to +125 °C Unit Min Max Min Max 74AHC30 tpd propagation A, B, C, D, E, F, G, H to Y; delay see Figure 6 and 7 [2] VCC = 3.0 V to 3.6 V CL = 15 pF - 5.0 9.5 1.0 11.0 1.0 12.0 ns CL = 50 pF - 6.7 12.0 1.0 14.5 1.0 15.5 ns CL = 15 pF - 3.6 6.5 1.0 7.5 1.0 8.0 ns CL = 50 pF - 4.9 8.0 1.0 9.5 1.0 10.5 ns VCC = 4.5 V to 5.5 V 74AHC_AHCT30_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 26 June 2009 6 of 14 74AHC30; 74AHCT30 NXP Semiconductors 8-input NAND gate Table 7. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7. Symbol Parameter 25 °C Conditions [3] fi = 1 MHz; power dissipation VI = GND to VCC capacitance CPD −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max Min Max - 10 - - - - - pF - 3.3 6.5 1.0 7.5 1.0 8.0 ns - 4.7 8.5 1.0 9.5 1.0 10.5 ns - 12 - - - - - pF 74AHCT30; VCC = 4.5 V to 5.5 V [2] propagation A, B, C, D, E, F, G, H to Y; delay see Figure 6 and 7 tpd CL = 15 pF CL = 50 pF [3] power fi = 1 MHz; dissipation VI = GND to VCC capacitance CPD [1] Typical values are measured at nominal supply voltage (VCC = 3.3 V and VCC = 5.0 V). [2] tpd is the same as tPLH and tPHL. [3] CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(CL × VCC2 × fo) = sum of the outputs. 11. Waveforms VI A, B, C, D, E, F, G, H input GND VM tPHL tPLH VOH VM Y output mna491 VOL Measurement points are given in Table 8. VOL and VOH are typical voltage output levels that occur with the output load. Fig 6. Input to output propagation delays Table 8. Measurement points Type Input Output VM VM 74AHC30 0.5 × VCC 0.5 × VCC 74AHCT30 1.5 V 0.5 × VCC 74AHC_AHCT30_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 26 June 2009 7 of 14 74AHC30; 74AHCT30 NXP Semiconductors 8-input NAND gate VI negative pulse tW 90 % VM VM 10 % GND tr tf tr VI positive pulse GND tf 90 % VM VM 10 % tW VCC G VI VO DUT RT CL 001aah768 Test data is given in Table 9. Definitions for test circuit: RT = termination resistance should be equal to the output impedance Zo of the pulse generator. CL = load capacitance including jig and probe capacitance. Fig 7. Load circuitry for measuring switching times Table 9. Test data Type Input Load Test VI tr, tf CL 74AHC30 VCC ≤ 3.0 ns 15 pF, 50 pF tPLH, tPHL 74AHCT30 3.0 V ≤ 3.0 ns 15 pF, 50 pF tPLH, tPHL 74AHC_AHCT30_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 26 June 2009 8 of 14 74AHC30; 74AHCT30 NXP Semiconductors 8-input NAND gate 12. Package outline SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 D E A X c y HE v M A Z 8 14 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 7 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 8.75 8.55 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.35 0.014 0.0075 0.34 0.16 0.15 0.010 0.057 inches 0.069 0.004 0.049 0.05 0.244 0.039 0.041 0.228 0.016 0.028 0.024 0.01 0.01 0.028 0.004 0.012 θ o 8 o 0 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. Fig 8. REFERENCES OUTLINE VERSION IEC JEDEC SOT108-1 076E06 MS-012 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-19 Package outline SOT108-1 (SO14) 74AHC_AHCT30_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 26 June 2009 9 of 14 74AHC30; 74AHCT30 NXP Semiconductors 8-input NAND gate TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 E D A X c y HE v M A Z 8 14 Q (A 3) A2 A A1 pin 1 index θ Lp L 1 7 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) θ mm 1.1 0.15 0.05 0.95 0.80 0.25 0.30 0.19 0.2 0.1 5.1 4.9 4.5 4.3 0.65 6.6 6.2 1 0.75 0.50 0.4 0.3 0.2 0.13 0.1 0.72 0.38 8 o 0 o Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT402-1 Fig 9. REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-18 MO-153 Package outline SOT402-1 (TSSOP14) 74AHC_AHCT30_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 26 June 2009 10 of 14 74AHC30; 74AHCT30 NXP Semiconductors 8-input NAND gate DHVQFN14: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; SOT762-1 14 terminals; body 2.5 x 3 x 0.85 mm A B D A A1 E c detail X terminal 1 index area terminal 1 index area C e1 e 2 6 y y1 C v M C A B w M C b L 1 7 Eh e 14 8 13 9 Dh X 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A(1) max. A1 b 1 0.05 0.00 0.30 0.18 c D (1) Dh E (1) Eh 0.2 3.1 2.9 1.65 1.35 2.6 2.4 1.15 0.85 e 0.5 e1 L v w y y1 2 0.5 0.3 0.1 0.05 0.05 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT762-1 --- MO-241 --- EUROPEAN PROJECTION ISSUE DATE 02-10-17 03-01-27 Fig 10. Package outline SOT762-1 (DHVQFN14) 74AHC_AHCT30_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 26 June 2009 11 of 14 74AHC30; 74AHCT30 NXP Semiconductors 8-input NAND gate 13. Abbreviations Table 10. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal-Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model LSTTL Low-power Schottky Transistor-Transistor Logic MM Machine Model 14. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes 74AHC_AHCT30_3 20090626 Product data sheet - 74AHC_AHCT30_2 Modifications: • • • Section 3: DHVQFN14 package added. Section 7: derating values added for DHVQFN14 package. Section 12: outline drawing added for DHVQFN14 package. 74AHC_AHCT30_2 20080530 Product data sheet - 74AHC_AHCT30_1 74AHC_AHCT30_1 19991130 Product specification - - 74AHC_AHCT30_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 26 June 2009 12 of 14 74AHC30; 74AHCT30 NXP Semiconductors 8-input NAND gate 15. Legal information 15.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 15.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 15.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 16. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] 74AHC_AHCT30_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 26 June 2009 13 of 14 NXP Semiconductors 74AHC30; 74AHCT30 8-input NAND gate 17. Contents 1 2 3 4 5 5.1 5.2 6 7 8 9 10 11 12 13 14 15 15.1 15.2 15.3 15.4 16 17 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Recommended operating conditions. . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 26 June 2009 Document identifier: 74AHC_AHCT30_3