TZA3036 SDH/SONET STM1/OC3 transimpedance amplifier Rev. 01 — 24 March 2006 Product data sheet 1. General description The TZA3036 is a transimpedance amplifier with Automatic Gain Control (AGC), designed to be used in STM1/OC3 fiber optic links. It amplifies the current generated by a photo detector (PIN diode or avalanche photodiode) and converts it to a differential output voltage. It offers a current mirror of average photo current for RSSI monitoring to be used in SFF-8472 compliant modules. The low noise characteristics makes it suitable for STM1/OC3 applications, but also for FTTx applications. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 2. Features n n n n n n n n n n Low equivalent input noise, typically 12 nA (RMS) Wide dynamic range, typically 0.18 µA to 1.5 mA (p-p) Differential transimpedance of 69 kΩ (typical) Bandwidth from DC to 160 MHz (typical) Differential outputs On-chip (AGC) with possibility of external control Single supply voltage 3.3 V; range 2.9 V to 3.6 V Bias voltage for PIN diode On-chip current mirror of average photo current for RSSI monitoring Identical ports available on both sides of die for easy bond layout and RF polarity selection 3. Applications n Digital fiber optic receiver modules in telecommunications transmission systems, in high speed data networks or in FTTx systems. TZA3036 Philips Semiconductors SDH/SONET STM1/OC3 transimpedance amplifier 4. Ordering information Table 1. Ordering information Type number Package TZA3036U Name Description Version - bare die, dimensions approximately 0.82 mm × 1.3 mm - 5. Block diagram CVCC VCC AGC 4 or 17 6 or 15 TZA3036 0.2 × IDREF IIDREF_MON IDREF IDREF_MON 5 or 16 BIASING RDREF 290 Ω DREF 1 or 3 RIDREF_MON CDREF GAIN CONTROL DPHOTO PEAK DETECTOR single-ended to differential converter IPIN output buffers 7 or 13 OUTQ IPHOTO 2 low noise amplifier 8 or 14 OUT 9, 10, 11, 12 GND 001aad075 Fig 1. Block diagram TZA3036_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 24 March 2006 2 of 15 TZA3036 Philips Semiconductors SDH/SONET STM1/OC3 transimpedance amplifier 6. Pinning information DREF IPHOTO DREF 6.1 Pinning 3 2 1 VCC 4 17 VCC IDREF_MON 5 16 IDREF_MON AGC 6 15 AGC TZA3036 OUTQ 7 14 OUT OUT 8 13 OUTQ GND 9 12 GND GND 10 11 GND 001aad076 Fig 2. Pin configuration 6.2 Pin description Table 2. Bonding pad description Bonding pad locations with respect to the center of the die (see Figure 10); X and Y are in µm. Symbol Pad X Y Type Description DREF 1 −493.6 140 output bias voltage output for PIN diode; connect cathode of PIN diode to pad 1 or pad 3 IPHOTO 2 −493.6 0 input current input; anode of PIN diode should be connected to this pad DREF 3 −493.6 −140 output bias voltage output for PIN diode; connect cathode of PIN diode to pad 1 or pad 3 VCC 4 −353.6 −278.6 supply supply voltage; connect supply to pad 4 or pad 17 IDREF_MON 5 −213.6 −278.6 output current output for RSSI measurements; connect a resistor to pad 5 or pad 16 and ground AGC 6 −73.6 −278.6 input AGC voltage; use pad 6 or pad 15 OUTQ 7 66.4 −278.6 output data output; complement of pad OUT; use pad 7 or pad 13 OUT 8 206.4 −278.6 output data output; use pad 8 or pad 14 [1] GND 9 346.4 −278.6 ground ground; connect together pads 9, 10, 11 and 12 as many as possible GND 10 486.4 −278.6 ground ground; connect together pads 9, 10, 11 and 12 as many as possible TZA3036_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 24 March 2006 3 of 15 TZA3036 Philips Semiconductors SDH/SONET STM1/OC3 transimpedance amplifier Table 2. Bonding pad description …continued Bonding pad locations with respect to the center of the die (see Figure 10); X and Y are in µm. Symbol Pad X Y Type Description GND 11 486.4 278.6 ground ground; connect together pads 9, 10, 11 and 12 as many as possible GND 12 346.4 278.6 ground ground; connect together pads 9, 10, 11 and 12 as many as possible OUTQ 13 206.4 278.6 output data output; complement of pad OUT; use pad 7 or pad 13 OUT 14 66.4 278.6 output data output; use pad 8 or pad 14 [1] AGC 15 −73.6 278.6 input AGC voltage; use pad 6 or pad 15 IDREF_MON 16 −213.6 278.6 output current output for RSSI measurements; connect a resistor to pad 5 or pad 16 and ground VCC 17 −353.6 278.6 supply supply voltage; connect supply to pad 4 or pad 17 [1] These pads go HIGH when current flows into pad IPHOTO. 7. Functional description The TZA3036 is a TransImpedance Amplifier (TIA) intended for use in fiber optic links for signal recovery in STM1/OC3 or FTTx applications. It amplifies the current generated by a photo detector (PIN diode or avalanche photodiode) and converts it to a differential output voltage. The most important characteristics of the TZA3036 are high receiver sensitivity, wide dynamic range and large bandwidth. Excellent receiver sensitivity is achieved by minimizing transimpedance amplifier noise. The TZA3036 has a wide dynamic range to handle the signal current generated by the PIN diode which can vary from 0.18 µA to 1.5 mA (p-p). This is implemented by an AGC loop which reduces the preamplifier feedback resistance so that the amplifier remains linear over the whole input range. The AGC loop hold capacitor is integrated on-chip, so an external capacitor is not required. The bandwidth of TZA3036 is optimized for STM1/OC3 application. It works from DC onward due to the absence of offset control loops. This allows for excellent performance regardless of signal content (long sequences of identical bits can be converted). A differential amplifier converts the output of the preamplifier to a differential voltage. 7.1 PIN diode connections The performance of an optical receiver is largely determined by the combined effect of the transimpedance amplifier and the PIN diode. In particular, the method used to connect the PIN diode to the input (pad IPHOTO) and the layout around the input pad strongly influences the main parameters of a transimpedance amplifier, such as sensitivity, bandwidth, and PSRR. Sensitivity is most affected by the value of the total capacitance at the input pad. Therefore, to obtain the highest possible sensitivity the total capacitance should be as low as possible. TZA3036_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 24 March 2006 4 of 15 TZA3036 Philips Semiconductors SDH/SONET STM1/OC3 transimpedance amplifier The parasitic capacitance can be minimized through: 1. Reducing the capacitance of the PIN diode. This is achieved by proper choice of PIN diode and typically a high reverse voltage. 2. Reducing the parasitics around the input pad. This is achieved by placing the PIN diode as close as possible to the TIA. The PIN diode can be biased with a positive or a negative voltage. Figure 3 shows the PIN diode biased positively, using the on-chip bias pad DREF. The voltage at DREF is derived from VCC by a low-pass filter comprising internal resistor RDREF and external capacitor C2 which decouples any supply voltage noise. The value of external capacitor C2 affects the value of PSRR and should have a minimum value of 470 pF. Increasing this value improves the value of PSRR. The current through RDREF is measured and sourced at pad IDREF_MON, see Section 7.3. If the biasing for the PIN diode is done external to the IC, pad DREF can be left unconnected. If a negative bias voltage is used, the configuration shown in Figure 4 can be used. In this configuration, the direction of the signal current is reversed to that shown in Figure 3. It is essential that in these applications, the PIN diode bias voltage is filtered to achieve the best sensitivity. For maximum freedom on bonding location, 2 outputs are available for DREF (pads 1 and 3). These are internally connected. Both outputs can be used if necessary. If only one is used, the other can be left open. VCC VCC 4 or 17 4 or 17 DREF 1 or 3 DREF 1 or 3 RDREF 290 Ω 290 Ω IPIN RDREF C2 470 pF IPHOTO 2 IPHOTO 2 IPIN TZA3036 TZA3036 001aad077 Fig 3. The PIN diode connected between the input and pad DREF TZA3036_1 Product data sheet negative bias voltage 001aad078 Fig 4. The PIN diode connected between the input and a negative supply voltage © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 24 March 2006 5 of 15 TZA3036 Philips Semiconductors SDH/SONET STM1/OC3 transimpedance amplifier 7.2 Automatic gain control The TZA3036 transimpedance amplifier can handle input currents from 0.18 µA to 1.5 mA which is equivalent to a dynamic range of 78 dB (electrical equivalent with 39 dB optical). At low input currents, the transimpedance must be high to obtain enough output voltage, and the noise should be low enough to guarantee a minimum bit error rate. At high input currents however, the transimpedance should be low to prevent excessive distortion at the output stage. To achieve the dynamic range, the gain of the amplifier depends on the level of the input signal. This is achieved in the TZA3036 by an AGC loop. The AGC loop comprises a peak detector and a gain control circuit. The peak detector detects the amplitude of the signal and stores it in a hold capacitor. The hold capacitor voltage is compared to a threshold voltage. The AGC is only active when the input signal level is larger than the threshold level and is inactive when the input signal is smaller than the threshold level. When the AGC is inactive, the transimpedance is at its maximum. When the AGC is active, the feedback resistor value of the transimpedance amplifier is reduced, reducing its transimpedance, to keep the output voltage constant. Figure 5 shows the transimpedance as function of the input current. To reduce sensitivity to offsets and output loads, the AGC detector senses the output just before the output buffer. Figure 6 shows the AGC voltage as function of the input current. 001aad079 102 transimpedance (kΩ) VAGC (V) 10 2.5 1 1.5 10−1 10−1 1 10 102 103 104 IPIN (µA) Fig 5. Transimpedance as function of the PIN diode current 0.5 10−1 1 10 102 103 104 IPIN (µA) Fig 6. AGC voltage as function of the PIN diode current TZA3036_1 Product data sheet 001aad080 3.5 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 24 March 2006 6 of 15 TZA3036 Philips Semiconductors SDH/SONET STM1/OC3 transimpedance amplifier For applications where the transimpedance is controlled by the TIA it is advised to leave the AGC pads unconnected to achieve fast attack and decay times. The AGC function can be overruled by applying a voltage to pad AGC. In this configuration, connecting pad AGC to ground gives maximum transimpedance and connecting it to VCC gives minimum transimpedance. This is depicted in Figure 7. The AGC voltage should be derived from the VCC for proper functioning. For maximum freedom on bonding location, 2 pads are available for AGC (pads 6 and 15). These pads are internally connected. Both pads can be used if necessary. 001aad081 102 transimpedance (kΩ) 10 1 10−1 0.2 0.4 0.6 0.8 1.0 VAGC/VCC Fig 7. Transimpedance as function of the AGC voltage 7.3 Monitoring RSSI via IDREF_MON To facilitate RSSI monitoring in modules (e.g. SFF-8472 compliant SFP modules), a current output is provided. This output gives a current which is 20 % of the average DREF current through the 290 Ω bias resistor. By connecting a resistor to the IDREF_MON output, a voltage proportional with to average input power can be obtained. The RSSI monitoring is implemented by measuring the voltage over the 290 Ω bias resistor. This method is preferred over a simple current mirror because at small photo currents the voltage drop over the resistor is very small. This gives a higher bias voltage yielding better performance of the photodiode. For maximum freedom on bonding location, 2 pads are available for IDREF_MON (pads 5 and 16). These pads are internally connected. Both pads can be used if necessary. If only one is used, the other can be left open. TZA3036_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 24 March 2006 7 of 15 TZA3036 Philips Semiconductors SDH/SONET STM1/OC3 transimpedance amplifier 8. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VCC supply voltage Vn voltage on any other pin In current on any other pin Min Max Unit −0.5 +3.8 V IPHOTO −0.5 +2.0 V OUT, OUTQ −0.5 VCC + 0.5 V AGC, IDREF_MON −0.5 VCC + 0.5 V DREF −0.5 VCC + 0.5 V IPHOTO −1 +2.5 mA OUT, OUTQ −10 +10 mA AGC, IDREF_MON −0.2 +0.2 mA DREF −4.0 +4.0 mA pad pad Ptot total power dissipation - 300 mW Tamb ambient temperature −40 +85 °C Tj junction temperature - 150 °C Tstg storage temperature −65 +150 °C 9. Characteristics Table 4. Characteristics Typical values at Tj = 25 °C and VCC = 3.3 V; minimum and maximum values are valid over the entire ambient temperature range and supply voltage range; all voltages are measured with respect to ground; unless otherwise specified. Symbol Parameter VCC supply voltage ICC supply current Ptot Tj Min Typ Max Unit 2.9 3.3 3.6 V - 20 24 mA total power dissipation - 66 87 mW junction temperature −40 - +125 °C Tamb ambient temperature −40 +25 +85 °C Rtr small-signal transresistance 46 69 98 kΩ f-3dB(h) high frequency −3 dB point CPIN = 0.7 pF 110 160 - MHz - 12 16 nA - 10 - µs In(rms)(itg)(tot) Conditions AC-coupled; RL(dif) = 100 Ω; excluding IDREF and IIDREF_MON measured differentially; AC-coupled, RL(dif) = 100 Ω total integrated RMS noise referenced to input; current over bandwidth CPIN = 0.7 pF; f-3dB(min) = 110 MHz third-order Bessel filter [1] Automatic gain control loop: pad AGC tatt attack time AGC pad unconnected tdecay decay time AGC pad unconnected - 40 - µs Vth(AGC)(p-p) peak-to-peak AGC threshold voltage referenced to output; measured differentially - 125 - mV TZA3036_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 24 March 2006 8 of 15 TZA3036 Philips Semiconductors SDH/SONET STM1/OC3 transimpedance amplifier Table 4. Characteristics …continued Typical values at Tj = 25 °C and VCC = 3.3 V; minimum and maximum values are valid over the entire ambient temperature range and supply voltage range; all voltages are measured with respect to ground; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit tested at DC level; Tamb = 25 °C 240 290 330 Ω - 0.33 - Ω/°C −1000 - +1500 µA - - 900 mV 0 - VCC − 0.4 V Bias voltage: pad DREF R(DREF-VCC) resistance between pin DREF and pin VCC TCRDREF temperature coefficient of RDREF Input: pad IPHOTO IIPHOTO(p-p) peak-to-peak current on pad IPHOTO Vbias(i) input bias voltage [2] Monitor: pad IDREF_MON [1] Vmon monitor voltage IIDREF_MON/IDREF monitor current ratio ratio IIDREF_MON / IDREF 19.5 20 20.5 % Ioffset(mon) monitor offset current Tamb = 25 °C 0 10 20 µA TCI(offset)mon temperature coefficient of monitor offset current - 30 - nA/°C - VCC − 1.2 - V IPIN = 0.18 µA (p-p) × Rtr 8 12 - mV IPIN = 20 µA (p-p) - 125 - mV IPIN = 1100 µA (p-p) Data outputs: pads OUT and OUTQ VO(cm) common mode output voltage AC-coupled; RL(dif) = 100 Ω Vo(dif)(p-p) peak-to-peak differential output voltage AC-coupled; RL(dif) = 100 Ω - 250 500 mV RO(dif) differential output resistance tested at DC level - 100 - Ω tr rise time 20 % to 80 %; IPIN = 100 µA (p-p) - 800 - ps tf fall time 80 % to 20 %; IPIN = 100 µA (p-p) - 1000 - ps [1] Guaranteed by design. [2] The input current range is determined by the allowed Pulse Width Distortion (PWD), which is < 5 % over the whole input current range. pulse width The PWD is defined as: PWD = ------------------------------- – ( 0.5 ) × 100 % , where T is the clock period. T TZA3036_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 24 March 2006 9 of 15 TZA3036 Philips Semiconductors SDH/SONET STM1/OC3 transimpedance amplifier 10. Application information For maximum freedom on bonding location, 2 outputs are available for OUT and OUTQ. The outputs should be used in pairs: pad 14 with pad 7 or pad 8 with pad 13. Pad 8 is internally connected with pad 14, pad 7 is internally connected with pad 13. The device is guaranteed with only one pair used. The other pair should be left open. Two examples of the bonding possibilities are shown in Figure 8. VCC IDREF_MON VCC C C PIN PIN C OUTQ IDREF_MON TZA3036U C OUT OUT GND TZA3036U OUTQ GND 001aad082 Fig 8. Application diagram highlighting flexible pad layout TZA3036_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 24 March 2006 10 of 15 xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x S-PARAMETER TEST SET PORT1 Philips Semiconductors 11. Test information TZA3036_1 Product data sheet NETWORK ANALYZER PORT2 Zo = 50 Ω Zo= 50 Ω VCC 4 or 17 8 or 14 PATTERN GENERATOR DATA CLOCK IPHOTO 2 7 or 13 2 TRIGGER INPUT Zo = 50 Ω TZA3036 2200 Ω R 55 Ω 22 nF 1 8.2 kΩ 22 nF OUT OUTQ 22 nF 9, 10, 11, 12 GND 001aad083 Fig 9. Test circuit TZA3036 11 of 15 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Total impedance of the test circuit (Ztot(tc)) is calculated by the equation Ztot(tc) = s21 × (R + Zi) × 2, where s21 is the insertion loss of ports 1 and 2. Typical values: R = 2200 Ω, Zi = 300 Ω. SDH/SONET STM1/OC3 transimpedance amplifier Rev. 01 — 24 March 2006 SAMPLING OSCILLOSCOPE DC-IN TZA3036 Philips Semiconductors SDH/SONET STM1/OC3 transimpedance amplifier 12. Bare die information 17 16 15 1 14 13 12 11 8 9 10 Y (0,0) X 2 3 4 5 6 7 001aac627 Origin is center of die. Fig 10. Bonding pad locations Table 5. Physical characteristics of the bare die Parameter Value Glass passivation 0.3 µm PSG (PhosphoSilicate Glass) on top of 0.8 µm silicon nitride Bonding pad dimension minimum dimension of exposed metallization is 90 µm × 90 µm (pad size = 100 µm × 100 µm) except pads 2 and 3 which have exposed metallization of 80 µm × 80 µm (pad size = 90 µm × 90 µm) Metallization 2.8 µm AlCu Thickness 380 µm nominal Die dimension 820 µm × 1300 µm (± 20 µm2) Backing silicon; electrically connected to GND potential through substrate contacts Attach temperature < 440 °C; recommended die attach is glue Attach time < 15 s 13. Package outline Not applicable. TZA3036_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 24 March 2006 12 of 15 TZA3036 Philips Semiconductors SDH/SONET STM1/OC3 transimpedance amplifier 14. Handling information 14.1 General Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be completely safe you must take normal precautions appropriate to handling MOS devices; see JESD625-A and/or IEC61340-5. 14.2 Additional information Pad IPHOTO has limited protection to ensure good RF performance. This pad should be handled with extreme care. 15. Abbreviations Table 6. Abbreviations Acronym Description SDH Synchronous Digital Hierarchy SONET Synchronous Optical NETwork RSSI Received Signal Strength Indicator FTTx Fiber To The “x” STM1 Synchronous Transport Mode 1 (155.52 Mbit/s) OC3 Optical Carrier level 3 (155.52 Mbit/s) PIN Positive Intrinsic Negative PSRR Power Supply Rejection Ratio 16. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes TZA3036_1 20060324 Product data sheet - - TZA3036_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 24 March 2006 13 of 15 TZA3036 Philips Semiconductors SDH/SONET STM1/OC3 transimpedance amplifier 17. Legal information 17.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com. 17.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 17.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is for the customer’s own risk. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Bare die — All die are tested on compliance with all related technical specifications as stated in this data sheet up to the point of wafer sawing for a period of ninety (90) days from the date of delivery by Philips Semiconductors. If there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. There are no post-packing tests performed on individual die or wafers. Philips Semiconductors has no control of third party procedures in the sawing, handling, packing or assembly of the die. Accordingly, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems after third party sawing, handling, packing or assembly of the die. It is the responsibility of the customer to test and qualify their application in which the die is used. All die sales are conditioned upon and subject to the customer entering into a written die sale agreement with Philips Semiconductors through its legal department. 17.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 18. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] TZA3036_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 24 March 2006 14 of 15 Philips Semiconductors TZA3036 SDH/SONET STM1/OC3 transimpedance amplifier 19. Contents 1 2 3 4 5 6 6.1 6.2 7 7.1 7.2 7.3 8 9 10 11 12 13 14 14.1 14.2 15 16 17 17.1 17.2 17.3 17.4 18 19 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 4 PIN diode connections . . . . . . . . . . . . . . . . . . . 4 Automatic gain control . . . . . . . . . . . . . . . . . . . 6 Monitoring RSSI via IDREF_MON . . . . . . . . . . 7 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Application information. . . . . . . . . . . . . . . . . . 10 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 Bare die information . . . . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Handling information. . . . . . . . . . . . . . . . . . . . 13 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Additional information . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. All rights reserved. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: [email protected]. Date of release: 24 March 2006 Document identifier: TZA3036_1