PMEG6010ETR High-temperature 60 V, 1 A Schottky barrier rectifier 10 October 2012 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits • Average forward current: IF(AV) ≤ 1 A • Reverse voltage: VR ≤ 60 V • Low forward voltage • High power capability due to clip-bonding technology • Small and flat lead SMD plastic package • AEC-Q101 qualified • High temperature Tj ≤ 175 °C 1.3 Applications • Low voltage rectification • High efficiency DC-to-DC conversion • Switch mode power supply • Reverse polarity protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF forward current Tsp = 165 °C - - 1.4 A IF(AV) average forward current δ = 0.5 ; f = 20 kHz; Tamb ≤ 140 °C; - - 1 A - - 1 A [1] square wave δ = 0.5 ; f = 20 kHz; Tsp ≤ 170 °C; square wave VR reverse voltage Tj = 25 °C - - 60 V VF forward voltage IF = 1 A; Tj = 25 °C - 460 530 mV IR reverse current Tj = 25 °C; VR = 60 V; tp ≤ 300 µs; - 30 60 µA δ ≤ 0.02 ; pulsed Scan or click this QR code to view the latest information for this product PMEG6010ETR NXP Semiconductors High-temperature 60 V, 1 A Schottky barrier rectifier Symbol Parameter Conditions Min Typ Max Unit trr reverse recovery time IR = 0.5 A; IF = 0.5 A; IR(meas) = 0.1 A; - 4.4 - ns Tj = 25 °C [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode[1] 2 A anode [1] Simplified outline 1 Graphic symbol 1 2 2 sym001 SOD123W The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number Package PMEG6010ETR Name Description Version SOD123W plastic surface mounted package; 2 leads SOD123W 4. Marking Table 4. Marking codes Type number Marking code PMEG6010ETR EK 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 60 V IF forward current Tsp = 165 °C - 1.4 A IF(AV) average forward current δ = 0.5 ; f = 20 kHz; Tamb ≤ 140 °C; - 1 A - 1 A - 50 A [1] square wave δ = 0.5 ; f = 20 kHz; Tsp ≤ 170 °C; square wave IFSM non-repetitive peak forward current PMEG6010ETR Product data sheet tp = 8 ms; Tj(init) = 25 °C; square wave All information provided in this document is subject to legal disclaimers. 10 October 2012 © NXP B.V. 2012. All rights reserved 2 / 13 PMEG6010ETR NXP Semiconductors High-temperature 60 V, 1 A Schottky barrier rectifier Symbol Parameter Conditions Ptot total power dissipation Tamb ≤ 25 °C Min Max Unit [2] - 680 mW [3] - 1150 mW [1] - 2140 mW Tj junction temperature - 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C [1] [2] [3] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] [3] [4] [5] Min Typ Max Unit [1][2] - - 220 K/W [1][3] - - 130 K/W [1][4] - - 70 K/W [5] - - 18 K/W For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of cathode tab. 006aab362 103 duty cycle = Zth(j-a) (K/W) 1 102 0.5 0.25 0.1 10 0.02 1 0.75 0.33 0.2 0.05 0.01 0 10- 1 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG6010ETR Product data sheet All information provided in this document is subject to legal disclaimers. 10 October 2012 © NXP B.V. 2012. All rights reserved 3 / 13 PMEG6010ETR NXP Semiconductors High-temperature 60 V, 1 A Schottky barrier rectifier 006aab363 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.25 0.1 10 0.33 0.2 0.05 0.02 0.01 0 1 10- 1 10- 3 10- 2 10- 1 FR4 PCB, mounting pad for cathode 1 cm Fig. 2. 1 102 10 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab364 103 Zth(j-a) (K/W) duty cycle = 102 10 1 0.5 0.25 0.1 0.02 1 0.75 0.33 0.2 0.05 0.01 0 10- 1 10- 3 10- 2 10- 1 1 102 10 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 0.1 A; Tj = 25 °C - 320 370 mV IF = 0.7 A; Tj = 25 °C - 430 490 mV IF = 1 A; Tj = 25 °C - 460 530 mV IF = 1 A; Tj = -40 °C - 510 590 mV IF = 1 A; Tj = 125 °C - 400 480 mV IF = 1 A; Tj = 150 °C - 380 460 mV PMEG6010ETR Product data sheet All information provided in this document is subject to legal disclaimers. 10 October 2012 © NXP B.V. 2012. All rights reserved 4 / 13 PMEG6010ETR NXP Semiconductors High-temperature 60 V, 1 A Schottky barrier rectifier Symbol Parameter IR reverse current Conditions Min Typ Max Unit IF = 1 A; Tj = 175 °C - 365 450 mV VR = 5 V; Tj = 25 °C; tp ≤ 300 µs; - 1.2 - µA - 1.7 - µA - 30 60 µA - 0.6 10 µA - 14 50 mA VR = 1 V; f = 1 MHz; Tj = 25 °C - 120 - pF VR = 10 V; f = 1 MHz; Tj = 25 °C - 40 - pF IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A; - 4.4 - ns - 500 - mV δ ≤ 0.02 ; pulsed VR = 10 V; Tj = 25 °C; tp ≤ 300 µs; δ ≤ 0.02 ; pulsed VR = 60 V; Tj = 25 °C; tp ≤ 300 µs; δ ≤ 0.02 ; pulsed VR = 60 V; Tj = -40 °C; tp ≤ 300 µs; δ ≤ 0.02 ; pulsed VR = 60 V; Tj = 125 °C; tp ≤ 300 µs; δ ≤ 0.02 ; pulsed Cd diode capacitance trr reverse recovery time Tj = 25 °C VFRM peak forward recovery voltage IF = 1 A; dIF/dt = 40 A/µs; Tj = 25 °C 006aad117 10 IR (A) IF (A) 1 (1) (2) 10-1 (3) (4) (5) 006aad118 10-1 (1) 10-2 (2) 10-3 (3) 10-4 (4) 10-5 (6) (5) 10-6 10-2 10-7 10-8 10-3 (6) 10-9 10-4 Fig. 4. 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF (V) 10-10 0 20 (1) Tj = 175 °C (1) Tj = 175 °C (2) Tj = 150 °C (2) Tj = 150 °C (3) Tj = 125 °C (3) Tj = 125 °C (4) Tj = 85 °C (4) Tj = 85 °C (5) Tj = 25 °C (5) Tj = 25 °C (6) Tj = −40 °C (6) Tj = −40 °C Forward current as a function of forward voltage; typical values PMEG6010ETR Product data sheet Fig. 5. VR (V) 60 Reverse current as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. 10 October 2012 40 © NXP B.V. 2012. All rights reserved 5 / 13 PMEG6010ETR NXP Semiconductors High-temperature 60 V, 1 A Schottky barrier rectifier 006aab892 250 006aad119 0.7 PF(AV) (W) 0.6 Cd (pF) 200 (4) (3) 0.5 150 0.4 (2) (1) 0.3 100 0.2 50 0 Fig. 6. 0.1 0 20 40 0 60 VR (V) 0 f = 1 MHz; Tamb = 25 °C Tj = 175 °C Diode capacitance as a function of reverse voltage; typical values (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 1 Fig. 7. 006aad120 2.5 0.5 1.0 1.5 Average forward power dissipation as a function of average forward current; typical values 006aad151 1.00 PR(AV) (W) IF(AV) (A) PR(AV) (W) 2.0 0.75 (1) 1.5 (2) 1.0 (1) 0.50 (2) (3) 0.25 0.5 (3) (4) (4) 0 Fig. 8. 0 20 40 VR (V) 0 60 0 Tj = 150 °C Tj = 125 °C (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 Average reverse power dissipation as a function of reverse voltage; typical values PMEG6010ETR Product data sheet Fig. 9. 40 VR (V) 60 Average reverse power dissipation as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. 10 October 2012 20 © NXP B.V. 2012. All rights reserved 6 / 13 PMEG6010ETR NXP Semiconductors High-temperature 60 V, 1 A Schottky barrier rectifier 006aad152 100 006aad121 1.5 PR(AV) (mW) (1) IF(AV) (A) 75 1.0 (2) (1) 50 (2) (3) 0.5 25 (4) (3) (4) 0 0 20 40 VR (V) 0 60 Tj = 85 °C Fig. 10. Average reverse power dissipation as a function of reverse voltage; typical values 006aad122 1.5 Fig. 11. Average forward current as a function of ambient temperature; typical values 006aad123 (1) 1.0 (3) (2) (3) 0.5 (4) 0 0 (4) 50 100 0 150 200 Tamb (°C) FR4 PCB, mounting pad for cathode 1 cm Tj = 175 °C Fig. 12. Average forward current as a function of ambient temperature; typical values Product data sheet 0 50 100 150 200 Tamb (°C) Ceramic PCB, Al2O3, standard footprint 2 Tj = 175 °C (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz PMEG6010ETR 150 200 Tamb (°C) (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz IF(AV) (A) (2) 0.5 100 1.5 (1) 1.0 50 FR4 PCB, standard footprint Tj = 175 °C (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 IF(AV) (A) 0 Fig. 13. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. 10 October 2012 © NXP B.V. 2012. All rights reserved 7 / 13 PMEG6010ETR NXP Semiconductors High-temperature 60 V, 1 A Schottky barrier rectifier 006aad124 1.5 (1) IF(AV) (A) 1.0 (2) (3) 0.5 (4) 0 0 50 100 150 Tsp (°C) 200 Tj = 175 °C (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 14. Average forward current as a function of solder point temperature; typical values 8. Test information IF IR(meas) time IR trr 006aad022 Fig. 15. Reverse recovery definition PMEG6010ETR Product data sheet All information provided in this document is subject to legal disclaimers. 10 October 2012 © NXP B.V. 2012. All rights reserved 8 / 13 PMEG6010ETR NXP Semiconductors High-temperature 60 V, 1 A Schottky barrier rectifier IF time VF VFRM VF time 001aab912 Fig. 16. Forward recovery definition P tcy duty cycle δ = tp tcy tp t 006aac658 Fig. 17. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMEG6010ETR Product data sheet All information provided in this document is subject to legal disclaimers. 10 October 2012 © NXP B.V. 2012. All rights reserved 9 / 13 PMEG6010ETR NXP Semiconductors High-temperature 60 V, 1 A Schottky barrier rectifier 9. Package outline 1.9 1.5 1.1 0.9 1 0.6 0.3 3.7 3.3 2.8 2.4 2 1.05 0.75 0.22 0.10 Dimensions in mm 08-11-06 Fig. 18. Package outline SOD123W 10. Soldering 4.4 2.9 2.8 solder lands 1.1 1.2 (2×) (2×) 2.1 1.6 solder resist solder paste occupied area 1.1 (2×) 1.2 (2×) Dimensions in mm sod123w_fr Fig. 19. Reflow soldering footprint for SOD123W 11. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG6010ETR v.1 20121010 Product data sheet - - PMEG6010ETR Product data sheet All information provided in this document is subject to legal disclaimers. 10 October 2012 © NXP B.V. 2012. All rights reserved 10 / 13 PMEG6010ETR NXP Semiconductors High-temperature 60 V, 1 A Schottky barrier rectifier In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 10 October 2012 © NXP B.V. 2012. All rights reserved 11 / 13 PMEG6010ETR NXP Semiconductors High-temperature 60 V, 1 A Schottky barrier rectifier No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ............................................... 2 3 Ordering information ............................................. 2 4 Marking ................................................................... 2 5 Limiting values .......................................................2 6 Thermal characteristics .........................................3 7 Characteristics ....................................................... 4 8 8.1 Test information ..................................................... 8 Quality information ......................................... 9 Package outline ................................................... 10 10 Soldering .............................................................. 10 11 Revision history ................................................... 10 12 12.1 12.2 12.3 12.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 10 October 2012 PMEG6010ETR Product data sheet All information provided in this document is subject to legal disclaimers. 10 October 2012 © NXP B.V. 2012. All rights reserved 13 / 13