DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D333 BYW28 series Ultra fast low-loss controlled avalanche rectifier Product specification File under Discrete Semiconductors, SC01 1997 Nov 26 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYW28 series FEATURES DESCRIPTION • Glass passivated Rugged glass SOD115 package, using a high temperature alloyed construction. • High maximum operating temperature The package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability. handbook, halfpage k a MAM384 Fig.1 Simplified outline (SOD115) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) IFRM PARAMETER CONDITIONS MIN. MAX. UNIT BYW28-500 − 500 V BYW28-600 − 600 V BYW28-500 − 500 V BYW28-600 − 600 V Ttp = 85 °C; lead length = 10 mm; see Fig.2; averaged over any 20 ms period; see also Fig.6 − 4 A Tamb = 60 °C; printed-circuit board mounting (see Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6 − 1.7 A repetitive peak reverse voltage continuous reverse voltage average forward current repetitive peak forward current Ttp = 85 °C; see Fig.4 − 46 A Tamb = 60 °C; see Fig.5 − 21 A A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − 170 ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj = Tj max prior to surge; inductive load switched off − 20 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C 1997 Nov 26 see Fig.7 2 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYW28 series ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER VF forward voltage V(BR)R reverse avalanche breakdown voltage CONDITIONS MIN. TYP. IF = 3.5 A; Tj = Tj max; see Fig.8 − − 0.90 V IF = 3.5 A; see Fig.8 UNIT − − 1.15 V 560 − − V − IR = 0.1 mA BYW28-500 675 − VR = VRRMmax; see Fig.9 − − 5 µA VR = VRRMmax; Tj = 165 °C; see Fig.9 − − 150 µA BYW28-600 IR MAX. reverse current V trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.12 − − 50 ns Cd diode capacitance f = 1 MHz; VR = 0; see Fig.10 − 275 − pF dI R -------dt maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.13 − − 4 A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 20 K/W Rth j-a thermal resistance from junction to ambient note 1 70 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11. For more information please refer to the ‘General Part of Handbook SC01’. 1997 Nov 26 3 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYW28 series GRAPHICAL DATA MBK237 8 MBK236 3 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 6 2 4 1 2 0 0 0 40 80 120 200 160 Ttp (°C) 0 40 80 a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.11. Switched mode application. Fig.2 Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). 120 160 200 Tamb (°C) Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MGL262 50 handbook, full pagewidth IFRM (A) δ = 0.05 40 30 0.1 20 0.2 10 0.5 1 0 10−2 10−1 1 10 102 103 tp (ms) 104 Ttp = 85 °C; Rth j-tp = 20 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = VRRMmax. Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1997 Nov 26 4 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYW28 series MBK238 30 handbook, full pagewidth IFRM (A) 20 δ = 0.05 0.1 10 0.2 0.5 1 0 10-2 10-1 1 102 10 103 104 tp (ms) Tamb = 60 °C; Rth j-a = 70 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = VRRMmax. Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MGL261 5.0 MGK645 200 handbook, halfpage handbook, halfpage Ptot (W) 4.0 Tj (°C) a = 3 2.5 2 1.57 1.42 3.0 100 2.0 1.0 0 0 1 0 2 3 4 5 IF(AV) (A) 0 50 VR (%VRmax) 100 a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.6 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1997 Nov 26 Fig.7 5 Maximum permissible junction temperature as a function of reverse voltage. Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYW28 series MBK235 10 MGC550 103 handbook, halfpage handbook, halfpage IF (A) 8 IR (µA) 102 6 4 10 2 1 0 0.4 0 0.8 1.2 1.6 2.0 0 VF (V) 100 Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. VR = VRRMmax. Fig.8 Fig.9 Forward current as a function of forward voltage; maximum values. Tj (°C) 200 Reverse current as a function of junction temperature; maximum values. MGL260 103 handbook, halfpage 50 handbook, halfpage 25 Cd (pF) 7 50 102 2 3 10 1 10 102 VR (V) 103 MGA200 f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.10 Diode capacitance as a function of reverse voltage; typical values. 1997 Nov 26 Fig.11 Device mounted on a printed-circuit board. 6 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier handbook, full pagewidth BYW28 series IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.12 Test circuit and reverse recovery time waveform and definition. IF halfpage handbook, dI F dt t rr 10% t dI R dt 100% IR MGC499 Fig.13 Reverse recovery definitions. 1997 Nov 26 7 MAM057 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier PACKAGE OUTLINE BYW28 series Hermetically sealed glass package; axial leaded; 2 leads SOD115 (1) k D G L a b L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G max. L min. mm 1.35 5.5 6.0 27 0 2.5 5 mm scale Note 1. The marking band indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-10-14 SOD115 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Nov 26 8 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYW28 series NOTES 1997 Nov 26 9 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYW28 series NOTES 1997 Nov 26 10 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYW28 series NOTES 1997 Nov 26 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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