DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D122 BYV1100 Fast soft-recovery rectifier Product specification 1998 Dec 03 Philips Semiconductors Product specification Fast soft-recovery rectifier BYV1100 FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass package through Implotec(1) technology. This package is hermetically sealed • High maximum operating temperature and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Available in ammo-pack. k handbook, 4 columns a MAM123 Fig.1 Simplified outline (SOD81) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 100 V VR continuous reverse voltage − 100 V IF(AV) average forward current Ttp = 55 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs.2 and 4 − 1.7 A Tamb = 60 °C; printed-circuit board mounting, see Fig.12; averaged over any 20 ms period; see Figs.3 and 4 − 1.0 A IFRM repetitive peak forward current Ttp = 55 °C; see Fig.6 − 15 A Tamb = 60 °C; see Fig.7 − 9.5 A t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − 15 A IFSM non-repetitive peak forward current Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C 1998 Dec 03 2 Philips Semiconductors Product specification Fast soft-recovery rectifier BYV1100 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VF forward voltage IF = 1 A; Tj = Tj max; see Fig.5 V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA IR reverse current MIN. TYP. − − 0.735 V UNIT − − 0.96 V 120 − − V VR = VRRMmax; see Fig.8 − − 5 µA VR = VRRMmax; Tj = 165 °C; see Fig.8 − − 150 µA 10 ns IF = 1 A; see Fig.5 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.10 − − Cd diode capacitance f = 1 MHz; VR = 0; see Fig.9 − 70 maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.11 − − dI R -------dt MAX. − pF 2 A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 60 K/W Rth j-a thermal resistance from junction to ambient note 1 120 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.12. For more information please refer to the “General Part of associated Handbook”. 1998 Dec 03 3 Philips Semiconductors Product specification Fast soft-recovery rectifier BYV1100 GRAPHICAL DATA MGR564 MGR565 2.0 2.0 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 1.6 1.6 1.2 1.2 0.8 0.8 0.4 0.4 0 0 40 0 80 120 40 0 160 200 Ttp (°C) 80 120 Switched mode application. a = 1.42; δ = 0.5; VR = VRRMmax. Switched mode application. a = 1.42; δ = 0.5; VR = VRRMmax. Device mounted as shown in Fig.12. Fig.2 Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). 160 200 Tamb (°C) Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MBK899 2.0 handbook, halfpage a=3 P (W) 2.5 2 MGR563 20 handbook, halfpage 1.57 1.42 IF (A) 1.6 16 1.2 12 0.8 8 0.4 4 0 0.4 0 0.8 1.2 0 1.6 2.0 IF(AV) (A) 0 1 2 3 VF (V) 4 a = IF(RMS)/IF(AV); δ = 0.5; VR = VRRMmax. Fig.4 Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1998 Dec 03 Fig.5 4 Maximum forward voltage as a function of forward current. Philips Semiconductors Product specification Fast soft-recovery rectifier BYV1100 MGR569 20 handbook, full pagewidth IFRM (A) 16 δ = 0.05 12 0.1 8 0.2 4 0.5 1 0 10−2 10−1 1 10 102 103 tp (ms) 104 Ttp = 55 °C; Rth j-tp = 60 K/W; VR = VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 100 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MGR568 10 handbook, full pagewidth δ = 0.05 IFRM (A) 8 0.1 6 4 0.2 0.5 2 1 0 10−2 10−1 1 10 102 103 tp (ms) 104 Tamb = 60 °C; Rth j-a = 120 K/W; VR = VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 100 V. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1998 Dec 03 5 Philips Semiconductors Product specification Fast soft-recovery rectifier BYV1100 MGC550 103 handbook, halfpage IR (µA) Cd (pF) 102 102 10 10 1 1 0 100 Tj (°C) 200 1 10 102 VR (V) f = 1 MHz; Tj = 25 °C. VR = VRRMmax. Fig.8 MBK900 103 handbook, halfpage Reverse current as a function of junction temperature; maximum values. Fig.9 IF (A) handbook, full pagewidth DUT 0.5 t rr 0 50 Ω 0.5 A Diode capacitance as a function of reverse voltage; typical values. t 0.25 0.5 IR (A) 1.0 Rise time oscilloscope: tr ≤ 2 ns. Turn-on time switch: t ≤ 3 ns. Fig.10 Test circuit and reverse recovery time waveform and definition. 1998 Dec 03 6 MAM282 Philips Semiconductors Product specification Fast soft-recovery rectifier BYV1100 50 handbook, halfpage 25 IF halfpage andbook, dI F dt 7 50 t rr 10% t dI R dt 100% IR 2 MGC499 3 MGA200 Dimensions in mm. Fig.11 Reverse recovery definitions. 1998 Dec 03 Fig.12 Device mounted on a printed-circuit board. 7 Philips Semiconductors Product specification Fast soft-recovery rectifier BYV1100 PACKAGE OUTLINE Hermetically sealed glass package; ImplotecTM(1) technology; axial leaded; 2 leads SOD81 G1 (2) k a b D L G L DIMENSIONS (mm are the original dimensions) UNIT mm b max. 0.81 D max. G max. 2.15 G1 max. 3.8 5 L min. 0 1 2 mm scale 28 Notes 1. Implotec is a trademark of Philips. 2. The marking band indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-20 SOD81 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Dec 03 8 Philips Semiconductors Product specification Fast soft-recovery rectifier BYV1100 NOTES 1998 Dec 03 9 Philips Semiconductors Product specification Fast soft-recovery rectifier BYV1100 NOTES 1998 Dec 03 10 Philips Semiconductors Product specification Fast soft-recovery rectifier BYV1100 NOTES 1998 Dec 03 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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