DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • • Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV Very low Drain-Source on-state resistance RDSon = 34 mΩ Very low threshold voltage of 0.65 V for portable applications 3. Applications • • • • Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 12 V VGS gate-source voltage -8 - 8 V ID drain current - - 3.2 A - 34 45 mΩ VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 3.2 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain 4 D drain Simplified outline Graphic symbol D 1 4 3 G 2 S Transparent top view 017aaa255 DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package PMXB40UNE Name Description Version DFN1010D-3 DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm SOT1215 7. Marking Table 4. Marking codes Type number Marking code PMXB40UNE 10 00 00 MARKING CODE (EXAMPLE) READING DIRECTION YEAR DATE CODE VENDOR CODE PIN 1 INDICATION MARK MARK-FREE AREA READING EXAMPLE: 11 01 10 Fig. 1. aaa-008041 DFN1010D-3 (SOT1215) binary marking code description PMXB40UNE Product data sheet All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 2 / 15 PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 12 V VGS gate-source voltage -8 8 V ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 3.2 A VGS = 4.5 V; Tamb = 100 °C [1] - 2.5 A - 15 A [2] - 0.4 W [1] - 1.07 W - 8.33 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 1 A Source-drain diode IS source current Tamb = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 6 cm . Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 017aaa123 120 Pder (%) 017aaa124 120 Ider (%) 80 80 40 40 0 - 75 Fig. 2. [1] - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMXB40UNE Product data sheet 0 - 75 175 Fig. 3. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 27 September 2013 25 © NXP N.V. 2013. All rights reserved 3 / 15 PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET aaa-008985 102 ID (A) tp = 10 µs 10 tp = 100 µs tp = 1 ms 1 DC; Tsp = 25 °C tp = 10 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 10-1 10-2 10-1 tp = 100 ms 1 10 102 VDS(V) IDM = single pulse Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] PMXB40UNE Product data sheet Min Typ Max Unit [1] - 271 311 K/W [2] - 102 117 K/W - 10 15 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 4 / 15 PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET aaa-008918 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0 0.01 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 aaa-008919 duty cycle = 1 0.75 0.5 0.33 Zth(j-a) (K/W) 102 10 0.02 0.01 0 1 10-3 0.25 0.2 0.1 0.05 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 6. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMXB40UNE Product data sheet All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 5 / 15 PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 12 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.65 0.9 V IDSS drain leakage current VDS = 12 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; ID = 3.2 A; Tj = 25 °C - 34 45 mΩ VGS = 4.5 V; ID = 3.2 A; Tj = 150 °C - 49 67 mΩ VGS = 2.5 V; ID = 3.2 A; Tj = 25 °C - 39 64 mΩ VGS = 1.8 V; ID = 1 A; Tj = 25 °C - 46 85 mΩ VGS = 1.5 V; ID = 0.1 A; Tj = 25 °C - 50 100 mΩ VGS = 1.2 V; ID = 1 mA; Tj = 25 °C - 121 - mΩ RDSon drain-source on-state resistance gfs forward transconductance VDS = 10 V; ID = 2 A; Tj = 25 °C - 1.2 - S RG gate resistance f = 1 MHz - 1 - Ω total gate charge VDS = 10 V; ID = 3.2 A; VGS = 4.5 V; - 6.6 11.6 nC QGS gate-source charge Tj = 25 °C - 0.6 - nC QGD gate-drain charge - 1.7 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 556 - pF Coss output capacitance Tj = 25 °C - 107 - pF Crss reverse transfer capacitance - 94 - pF td(on) turn-on delay time VDS = 10 V; ID = 3.2 A; VGS = 4.5 V; - 6 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 21 - ns td(off) turn-off delay time - 18 - ns tf fall time - 9 - ns - 0.8 1.2 V Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage PMXB40UNE Product data sheet IS = 1 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 6 / 15 PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET aaa-008986 12 4.5 V 2.5 V 1.8 V ID (A) ID (A) 10-3 1.6 V 8 aaa-008987 10-2 min typ max 1.5 V 10-4 1.4 V 4 10-5 1.2 V VGS = 1.0 V 0 Fig. 7. 0 1 2 3 10-6 4 VDS(V) 0 0.5 1 VGS (V) 1.5 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 8. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-008988 120 1.3 V 1.4 V RDSon (mΩ) aaa-008989 120 1.5 V 1.6 V 1.7 V RDSon (mΩ) 1.8 V 80 80 2.0 V Tj = 150 °C 40 40 2.5 V Tj = 25 °C VGS = 4.5 V 0 0 4 8 ID(A) 0 12 Tj = 25 °C Fig. 9. Product data sheet 1 2 3 4 VGS(V) 5 ID = 3.2 A Drain-source on-state resistance as a function of drain current; typical values PMXB40UNE 0 Fig. 10. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 7 / 15 PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET aaa-008990 10 aaa-008991 2 ID (A) a 8 1.5 6 1 4 0.5 2 0 Tj = 150 °C Tj = 25 °C 0 0.5 1 1.5 VGS (V) 0 -60 2 VDS > ID × RDSon Fig. 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-008992 1.25 0 60 120 Tj (°C) 180 Fig. 12. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-008993 103 VGS(th) (V) Ciss 1.00 C (pF) 0.75 Crss 102 max Coss 0.50 typ 0.25 min 0 -60 0 60 120 Tj(°C) 10 10-1 180 ID = 0.25 mA; VDS = VGS Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 13. Gate-source threshold voltage as a function of junction temperature PMXB40UNE 1 Fig. 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 8 / 15 PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET aaa-008994 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 003aaa508 0 0 2 4 6 QG (nC) Fig. 16. MOSFET transistor: Gate charge waveform definitions 8 ID = 3.2 A; VDS = 10 V; Tamb = 25 °C Fig. 15. Gate-source voltage as a function of gate charge; typical values aaa-008995 2 Is (A) 1.5 1 Tj = 150 °C 0.5 Tj = 25 °C 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V Fig. 17. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 18. Duty cycle definition PMXB40UNE Product data sheet All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 9 / 15 PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET 12. Package outline DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body: 1.1 x 1.0 x 0.37 mm SOT1215 visible depend upon used manufacturing technology (2x) solderable lead end, protrusion max. 0.02 mm (3x) pin 1 index area visible depend upon used manufacturing technology (4x) e b (2x) 1 2 L (2x) E E1 e1 L1 D A1 3 b1 A D1 0 1 mm scale Dimensions (mm are the original dimensions) Unit mm A A1 b b1 D D1 E E1 e e1 min 0.34 0.22 0.245 1.05 0.87 0.95 0.16 nom 0.37 0.25 0.275 1.10 0.90 1.00 0.19 0.75 max 0.40 0.04 0.30 0.325 1.15 0.95 1.05 0.24 0.1 L L1 0.17 0.195 0.20 0.225 0.25 0.275 Note 1. Dimension A is including plating thickness. Outline version sot1215_po References IEC JEDEC JEITA European projection Issue date 13-03-05 13-03-06 SOT1215 Fig. 19. Package outline DFN1010D-3 (SOT1215) PMXB40UNE Product data sheet All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 10 / 15 PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering of DFN1010D-3 package SOT1215 1.2 0.45 (2x) 0.3 1.1 0.35 (2x) 0.4 0.25 (2x) 0.75 0.3 0.5 1.5 1.4 0.4 0.5 0.4 0.3 0.5 1.3 0.4 0.3 0.4 0.5 1.3 solder land solder land plus solder paste occupied area solder resist Dimensions in mm Issue date 12-11-23 13-03-06 sot1215_fr Fig. 20. Reflow soldering footprint for DFN1010D-3 (SOT1215) PMXB40UNE Product data sheet All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 11 / 15 PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMXB40UNE v.1 20130927 Product data sheet - - PMXB40UNE Product data sheet All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 12 / 15 PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 13 / 15 PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 27 September 2013 PMXB40UNE Product data sheet All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 15 / 15