MD -6 PMPB20EN DF N2 020 30 V N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Trench MOSFET technology Very fast switching Exposed drain pad for excellent thermal conduction Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Tin-plated 100 % solderable side pads for optical solder inspection 1.3 Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portables Hard disk and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Tj = 25 °C VDS drain-source voltage VGS gate-source voltage ID drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s Min [1] Typ Max Unit - - 30 V -20 - 20 V - - 10.4 A - 16.5 19.5 mΩ Static characteristics RDSon [1] drain-source on-state resistance VGS = 10 V; ID = 7 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMPB20EN NXP Semiconductors 30 V N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain Simplified outline Graphic symbol D 1 6 7 2 5 3 8 G 4 S 017aaa253 6 D drain Transparent top view 7 D drain SOT1220 (DFN2020MD-6) 8 S source 3. Ordering information Table 3. Ordering information Type number PMPB20EN Package Name Description Version DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals SOT1220 4. Marking Table 4. Marking codes Type number Marking code PMPB20EN 1B PMPB20EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 May 2012 © NXP B.V. 2012. All rights reserved. 2 of 15 PMPB20EN NXP Semiconductors 30 V N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage -20 20 V drain current ID total power dissipation Ptot - 10.4 A VGS = 10 V; Tamb = 25 °C [1] - 7.2 A VGS = 10 V; Tamb = 100 °C [1] - 4.6 A Tamb = 25 °C; single pulse; tp ≤ 10 µs peak drain current IDM VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - 30 A Tamb = 25 °C [1] - 1.7 W Tamb = 25 °C; t ≤ 5 s [1] - 3.5 W - 12.5 W -55 150 °C Tsp = 25 °C Tj junction temperature Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 2.2 A Source-drain diode source current IS [1] [1] Tamb = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. 017aaa124 120 −25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMPB20EN Product data sheet 0 −75 175 Fig 2. −25 25 75 125 175 Tj (°C) Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 May 2012 © NXP B.V. 2012. All rights reserved. 3 of 15 PMPB20EN NXP Semiconductors 30 V N-channel Trench MOSFET 017aaa541 102 ID (A) Limit RDSon = VDS/ID tp = 10 μs 10 tp = 100 μs tp = 1 ms 1 tp = 10 ms DC; Tsp = 25 °C tp = 100 ms 10-1 DC; Tamb = 25 °C; drain mounting pad 6 cm2 10-2 10-1 1 102 10 VDS (V) IDM = single pulse Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) Min Typ Max Unit [1] - 235 270 K/W [2] - 67 74 K/W [3] - 33 36 K/W - 5 10 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s PMPB20EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 May 2012 © NXP B.V. 2012. All rights reserved. 4 of 15 PMPB20EN NXP Semiconductors 30 V N-channel Trench MOSFET 017aaa542 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.25 0.1 0.05 0.02 10 0.01 0 1 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa543 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.25 0.1 0.05 0 1 10-3 0.02 0.01 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMPB20EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 May 2012 © NXP B.V. 2012. All rights reserved. 5 of 15 PMPB20EN NXP Semiconductors 30 V N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1 1.5 2 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 20 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 10 V; ID = 7 A; Tj = 25 °C - 16.5 19.5 mΩ VGS = 10 V; ID = 7 A; Tj = 150 °C - 27 32 mΩ VGS = 4.5 V; ID = 7 A; Tj = 25 °C - 20.5 24.5 mΩ RDSon drain-source on-state resistance gfs forward transconductance VDS = 10 V; ID = 7 A; Tj = 25 °C - 8 - S RG gate resistance f = 1 MHz - 1.7 - Ω VDS = 15 V; ID = 5 A; VGS = 10 V; Tj = 25 °C - 7.2 10.8 nC - 1 - nC - 0.67 - nC - 435 - pF - 90 - pF - 35 - pF - 9 - ns - 17 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 9 - ns tf fall time - 8 - ns - 0.8 1.2 V VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 15 V; ID = 5 A; VGS = 4.5 V; RG(ext) = 1.7 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage PMPB20EN Product data sheet IS = 2.2 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 May 2012 © NXP B.V. 2012. All rights reserved. 6 of 15 PMPB20EN NXP Semiconductors 30 V N-channel Trench MOSFET 017aaa544 25 ID (A) ID (A) 3.2 V VGS = 10 V 017aaa545 10-2 3.5 V 20 10-3 3.0 V 2.9 V 15 10-4 min typ 1.0 1.5 2.7 V 10 2.6 V 5 10-5 2.5 V 10-6 0.0 0 0 1 2 3 4 0.5 VDS (V) Tj = 25 °C Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 017aaa546 RDSon (Ω) 2.5 V 3.0 V Fig 7. Sub-threshold drain current as a function of gate-source voltage 017aaa547 0.10 RDSon (Ω) 3.25 V VGS = 2.75 V 0.08 2.0 2.5 VGS (V) Tj = 25 °C; VDS = 5 V 0.10 0.08 0.06 0.06 0.04 0.04 3.5 V Tj = 150 °C 3.75 V 4.5 V 0.02 0.02 10 V Tj = 25 °C 0.00 0.00 0 5 10 15 20 25 0 2 ID (A) Tj = 25 °C Fig 8. max Product data sheet 6 8 10 VGS (V) ID = 8 A Drain-source on-state resistance as a function of drain current; typical values PMPB20EN 4 Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 May 2012 © NXP B.V. 2012. All rights reserved. 7 of 15 PMPB20EN NXP Semiconductors 30 V N-channel Trench MOSFET 017aaa548 30 017aaa549 1.8 ID (A) a 20 1.4 10 1.0 Tj = 150 °C Tj = 25 °C 0.6 -60 0 0 1 2 3 4 0 60 120 VGS (V) 180 Tj (°C) VDS > ID × RDSon Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa560 2.5 Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 017aaa550 103 VGS(th) (V) 2.0 max 1.5 typ Ciss C (pF) 102 1.0 Coss min Crss 0.5 0.0 -60 0 60 120 180 10 10-1 1 Tj (°C) VDS (V) ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V Fig 12. Gate-source threshold voltage as a function of junction temperature PMPB20EN Product data sheet 102 10 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 May 2012 © NXP B.V. 2012. All rights reserved. 8 of 15 PMPB20EN NXP Semiconductors 30 V N-channel Trench MOSFET 017aaa551 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0 2 4 6 8 QG (nC) ID = 5 A; VDS = 15 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa552 2.5 IS (A) 2.0 1.5 1.0 Tj = 150 °C Tj = 25 °C 0.5 0.0 0.0 0.2 0.4 0.6 0.8 1.0 VDS (V) VGS = 0 V Fig 16. Source current as a function of source-drain voltage; typical values PMPB20EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 May 2012 © NXP B.V. 2012. All rights reserved. 9 of 15 PMPB20EN NXP Semiconductors 30 V N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 9. Package outline 0.51 0.61 0.2 0.3 1.9 2.1 1.0 1.2 0.2 0.3 3 4 2 5 1 6 1.1 1.3 1.9 2.1 0.25 0.35 0.65 Dimensions in mm 12-04-30 Fig 18. Package outline SOT1220 (DFN2020MD-6) PMPB20EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 May 2012 © NXP B.V. 2012. All rights reserved. 10 of 15 PMPB20EN NXP Semiconductors 30 V N-channel Trench MOSFET 10. Soldering Footprint information for reflow soldering of DFN2020MD-6 package 0.33 (6×) SOT1220 0.76 0.43 (6×) 0.66 0.53 (6×) 0.56 0.25 0.35 0.45 0.775 0.65 2.06 0.285 1.25 0.35 (6×) 1.35 1.05 0.25 (6×) 0.65 0.45 (6×) 0.9 1.1 1.2 0.935 0.935 2.5 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot1220_fr Fig 19. Reflow soldering footprint for SOT1220 (DFN2020MD-6) PMPB20EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 May 2012 © NXP B.V. 2012. All rights reserved. 11 of 15 PMPB20EN NXP Semiconductors 30 V N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMPB20EN v.1 20120516 Product data sheet - - PMPB20EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 May 2012 © NXP B.V. 2012. All rights reserved. 12 of 15 PMPB20EN NXP Semiconductors 30 V N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 May 2012 © NXP B.V. 2012. All rights reserved. 13 of 15 PMPB20EN NXP Semiconductors 30 V N-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test information . . . . . . . . . . . . . . . . . . . . . . . . .10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 May 2012 Document identifier: PMPB20EN